TW200535985A - Substrate washing device and substrate washing method - Google Patents

Substrate washing device and substrate washing method Download PDF

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Publication number
TW200535985A
TW200535985A TW094112570A TW94112570A TW200535985A TW 200535985 A TW200535985 A TW 200535985A TW 094112570 A TW094112570 A TW 094112570A TW 94112570 A TW94112570 A TW 94112570A TW 200535985 A TW200535985 A TW 200535985A
Authority
TW
Taiwan
Prior art keywords
substrate
space
gas
chamber
generated
Prior art date
Application number
TW094112570A
Other languages
English (en)
Chinese (zh)
Other versions
TWI374475B (ko
Inventor
Tsuyoshi Moriya
Hiroyuki Nakayama
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200535985A publication Critical patent/TW200535985A/zh
Application granted granted Critical
Publication of TWI374475B publication Critical patent/TWI374475B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32834Exhausting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02082Cleaning product to be cleaned
    • H01L21/0209Cleaning of wafer backside

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW094112570A 2004-04-28 2005-04-20 Substrate washing device and substrate washing method TW200535985A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004134174A JP4450371B2 (ja) 2004-04-28 2004-04-28 基板洗浄装置及び基板洗浄方法

Publications (2)

Publication Number Publication Date
TW200535985A true TW200535985A (en) 2005-11-01
TWI374475B TWI374475B (ko) 2012-10-11

Family

ID=35346600

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094112570A TW200535985A (en) 2004-04-28 2005-04-20 Substrate washing device and substrate washing method

Country Status (4)

Country Link
JP (1) JP4450371B2 (ko)
KR (1) KR100674735B1 (ko)
CN (1) CN100388430C (ko)
TW (1) TW200535985A (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100790824B1 (ko) * 2006-05-30 2008-01-02 삼성전자주식회사 반도체 디바이스 제조설비에서의 웨이퍼 로딩 및 언로딩방법
JP4940184B2 (ja) 2008-05-22 2012-05-30 株式会社日立ハイテクノロジーズ 真空処理装置および真空処理方法
JP5395405B2 (ja) 2008-10-27 2014-01-22 東京エレクトロン株式会社 基板洗浄方法及び装置
CN104347358A (zh) * 2014-09-15 2015-02-11 上海华力微电子有限公司 改善器件等离子体损伤的方法
US10203604B2 (en) * 2015-11-30 2019-02-12 Applied Materials, Inc. Method and apparatus for post exposure processing of photoresist wafers
CN110459493B (zh) * 2019-08-21 2022-03-22 北京北方华创微电子装备有限公司 抽真空腔室及抽真空方法
JP2022180785A (ja) 2021-05-25 2022-12-07 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298720A (en) * 1990-04-25 1994-03-29 International Business Machines Corporation Method and apparatus for contamination control in processing apparatus containing voltage driven electrode
US5858108A (en) * 1996-07-15 1999-01-12 Taiwan Semiconductor Manufacturing Company, Ltd Removal of particulate contamination in loadlocks
AT405655B (de) * 1997-03-26 1999-10-25 Sez Semiconduct Equip Zubehoer Verfahren und vorrichtung zum einseitigen bearbeiten scheibenförmiger gegenstände
JPH11330056A (ja) * 1998-05-21 1999-11-30 Hitachi Ltd 電極のクリーニング方法
JP4355046B2 (ja) * 1999-03-17 2009-10-28 キヤノンアネルバ株式会社 クリーニング方法及び基板処理装置
JP4128344B2 (ja) * 2001-08-14 2008-07-30 大日本スクリーン製造株式会社 基板処理装置

Also Published As

Publication number Publication date
CN1691288A (zh) 2005-11-02
TWI374475B (ko) 2012-10-11
JP2005317782A (ja) 2005-11-10
KR100674735B1 (ko) 2007-01-25
CN100388430C (zh) 2008-05-14
KR20060047498A (ko) 2006-05-18
JP4450371B2 (ja) 2010-04-14

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