TW200531116A - Cathode base plate and its manufacture method - Google Patents

Cathode base plate and its manufacture method Download PDF

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Publication number
TW200531116A
TW200531116A TW094104346A TW94104346A TW200531116A TW 200531116 A TW200531116 A TW 200531116A TW 094104346 A TW094104346 A TW 094104346A TW 94104346 A TW94104346 A TW 94104346A TW 200531116 A TW200531116 A TW 200531116A
Authority
TW
Taiwan
Prior art keywords
layer
emitter
hole
gate
gate electrode
Prior art date
Application number
TW094104346A
Other languages
English (en)
Chinese (zh)
Other versions
TWI359436B (https=
Inventor
Haruhisa Nakano
Masaaki Hirakawa
Osamu Miura
Hirohiko Murakami
Kensuke Okasaka
Tomoaki Kojima
Original Assignee
Ulvac Inc
Ulvac Coating Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Ulvac Coating Corp filed Critical Ulvac Inc
Publication of TW200531116A publication Critical patent/TW200531116A/zh
Application granted granted Critical
Publication of TWI359436B publication Critical patent/TWI359436B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48—Electron guns
    • H01J29/481—Electron guns using field-emission, photo-emission, or secondary-emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
TW094104346A 2004-03-01 2005-02-15 Cathode base plate and its manufacture method TW200531116A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004056624A JP4456891B2 (ja) 2004-03-01 2004-03-01 カソード基板及びその作製方法

Publications (2)

Publication Number Publication Date
TW200531116A true TW200531116A (en) 2005-09-16
TWI359436B TWI359436B (https=) 2012-03-01

Family

ID=35031716

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094104346A TW200531116A (en) 2004-03-01 2005-02-15 Cathode base plate and its manufacture method

Country Status (5)

Country Link
US (2) US20050230750A1 (https=)
JP (1) JP4456891B2 (https=)
KR (1) KR101121195B1 (https=)
CN (1) CN100477060C (https=)
TW (1) TW200531116A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4833639B2 (ja) * 2005-11-09 2011-12-07 株式会社アルバック カソード基板及びその作製方法、並びに表示素子及びその作製方法
JP4755898B2 (ja) * 2005-12-28 2011-08-24 株式会社アルバック カソード基板の作製方法及び表示素子の作製方法
CN102034664A (zh) * 2009-09-30 2011-04-27 清华大学 场发射阴极结构及场发射显示器
DE102010000895B4 (de) * 2010-01-14 2018-12-27 Robert Bosch Gmbh Verfahren zum Herstellen eines Durchkontaktes eines Halbleiterbauelements mit einem umgebenden ringförmigen Isolationsgraben und entsprechendes Halbleiterbauelement
EP2602830A4 (en) * 2010-08-05 2017-03-22 Fujitsu Limited Method for manufacturing semiconductor device and method for growing graphene
CN101908457B (zh) * 2010-08-27 2012-05-23 清华大学 金属栅网及场发射装置和场发射显示器
CN105374654B (zh) * 2014-08-25 2018-11-06 同方威视技术股份有限公司 电子源、x射线源、使用了该x射线源的设备
US10658144B2 (en) * 2017-07-22 2020-05-19 Modern Electron, LLC Shadowed grid structures for electrodes in vacuum electronics
CN110767519B (zh) * 2019-10-21 2022-03-04 中国电子科技集团公司第十二研究所 一种场发射电子源结构及其形成方法、电子源、微波管
CN114525498B (zh) * 2022-03-07 2022-11-01 苏州迈为科技股份有限公司 下垂罩板及带有该下垂罩板的pecvd设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3252545B2 (ja) * 1993-07-21 2002-02-04 ソニー株式会社 電界放出型カソードを用いたフラットディスプレイ
US5621272A (en) * 1995-05-30 1997-04-15 Texas Instruments Incorporated Field emission device with over-etched gate dielectric
US5710483A (en) * 1996-04-08 1998-01-20 Industrial Technology Research Institute Field emission device with micromesh collimator
FR2756969B1 (fr) * 1996-12-06 1999-01-08 Commissariat Energie Atomique Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source
JP3740295B2 (ja) * 1997-10-30 2006-02-01 キヤノン株式会社 カーボンナノチューブデバイス、その製造方法及び電子放出素子
JP2000260299A (ja) * 1999-03-09 2000-09-22 Matsushita Electric Ind Co Ltd 冷電子放出素子及びその製造方法
JP2001256884A (ja) * 2000-03-10 2001-09-21 Sony Corp 冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置及びその製造方法
US6448701B1 (en) * 2001-03-09 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Self-aligned integrally gated nanofilament field emitter cell and array
JP2002334673A (ja) * 2001-05-09 2002-11-22 Hitachi Ltd 表示装置

Also Published As

Publication number Publication date
US20090325452A1 (en) 2009-12-31
KR20060043044A (ko) 2006-05-15
TWI359436B (https=) 2012-03-01
JP2005251430A (ja) 2005-09-15
JP4456891B2 (ja) 2010-04-28
KR101121195B1 (ko) 2012-03-23
CN1664972A (zh) 2005-09-07
US20050230750A1 (en) 2005-10-20
CN100477060C (zh) 2009-04-08

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Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees