TW200523667A - Manufacturing method for exposure mask, generating method for mask substrate information - Google Patents

Abstract

To realize a method for manufacturing an exposure mask which is effective to solve a problem on the lowering of the yield of a product caused by the deterioration of the flatness of a mask base plate by chucking the mask base plate on the mask stage of a wafer aligner. The surface shape of the principal surface of each of a plurality of mask base plates and the flatness of the principal surface thereof before and after chucking the mask base plate on the mask stage of the aligner are acquired (step S3), the mask base plate having the surface shape having good flatness both before and after it is chucked on the mask stage is prepared (step S5), and a desired pattern is formed on the mask base plate, whereby the exposure mask is formed (step S6).

Description

2Q0523667 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method for manufacturing an exposure mask in a semiconductor field, a method for generating a mask substrate information, a method for manufacturing a semiconductor device, a mask substrate, an exposure mask, and a temple. Server. [Prior art]

Ik's progress in the miniaturization of semiconductor devices has increased the requirements for the miniaturization of photolithography processes. At present, the design rules of the device have been reduced to 1313, and the precision of the pattern size must be controlled to about 10 nm. As a result, the subject of photolithography used in semiconductor manufacturing processes has become more and more significant in recent years. This subject is related to the flatness of the mask substrate used in the lithography process, and it is one of the reasons for the high accuracy of the pattern forming process. That is, with the miniaturization, the flatness of the photomask substrate cannot be ignored as the focal tolerances of the lithography process become smaller. Therefore, as a result of the present inventors' continuous research on the flatness of the mask substrate, the following matters were clearly understood. There are various shapes of the surface of the photomask substrate. Even with the same flatness, there are various shapes such as convex, concave, saddle, and other mixed types. Therefore, even with the same flatness, when the photomask substrate is held on the photomask stage of the wafer exposure device by the vacuum chuck, the photomask substrate or the vacuum chuck is used to hold the photomask substrate during the clamping process. In a case where a large amount of deformation occurs, in a case where there is almost no k-shape, or in a case where the flatness becomes better. This is because the flatness of the mask substrate after clamping is dependent on the light before clamping

O: \ 100 \ 100106.DOC 200523667 The surface shape of the mask substrate, and even the same mask substrate will change due to the vacuum chuck. However, since only the flatness is managed in the past, the surface shape of the mask substrate is different, and the flatness of the mask substrate may be greatly deteriorated by clamping the mask substrate to the mask stage of the wafer exposure device. Then, it was understood that forming a pattern on a photomask substrate having such deteriorated flatness and using the obtained exposure photomask to manufacture a semiconductor device is the main cause of product productivity. ® [Problems to be Solved by the Invention] As described above, the inventors have compared the flatness of the photomask substrate after the photomask substrate is sandwiched between the photomask and the wafer exposure stage, and confirmed that the photomask depends on the photomask. The shape of the surface of the substrate may be worsened by the flatness of the substrate, and it is found that the deterioration of the flatness is the main cause of the decrease in product productivity. The present invention has been made in consideration of the above matters, and an object thereof is to provide an effective method for manufacturing an exposure mask, a method for generating information on a mask substrate, a method for manufacturing a semiconductor phi device, a mask substrate, an exposure mask, and a server. In order to solve the problem that the flatness of the photomask substrate is deteriorated due to the photomask substrate being held on the photomask stage of the wafer exposure device, and the product productivity is reduced. [Summary of the Invention] The method for manufacturing an exposure mask of the first viewpoint of the present invention is characterized by: obtaining first information of the surface shape of each display main surface of a plurality of mask substrates, and displaying the exposure on each mask substrate; The process of the second information of the flatness of the aforementioned main surface before and after clamping of the photomask stage of the device; the corresponding relationship between the aforementioned photomask substrates and the aforementioned first information and the aforementioned second information is produced, and O: \ 100 \ 100106.DOC -6- 200523667 The process of choosing to display the desired flatness among the correspondences made; separate from the aforementioned plurality of photomask substrates and prepare the second information from the selection and the first from the aforementioned correspondence The manufacturing process of the mask substrate with the same surface shape as shown in the information; the manufacturing process of forming the desired pattern on the prepared mask substrate. The manufacturing method of the exposure mask at the second viewpoint of the present invention is characterized by having: for each of a plurality of mask substrates, the mask shape of each of the mask substrates and the main surface of each mask substrate is displayed. The first information is selected from the correspondence between the second information of the flatness of the main surface before and after the mask stage of the exposure device displayed on each mask substrate is clamped, and the second information of the desired flatness is displayed, and A process for preparing a plurality of photomask substrates separated from each other to prepare a photomask substrate having the same surface shape as that of the second information selected in the selected second information; forming a desired photomask on the prepared photomask substrate Pattern process. The manufacturing method of the exposure mask at the third viewpoint of the present invention is characterized in that φ has a process of obtaining information showing the surface shape of the main surface for each of the plurality of mask substrates; manufacturing the aforementioned mask substrates and the aforementioned information The process of the corresponding relationship; the information showing the convex surface shape is selected from the produced corresponding relationship, and the fish is selected from the aforementioned plurality of photomask substrates, and the selection information is the process of the photomask substrate in the aforementioned corresponding relationship; And the process of forming the desired pattern on the selected mask substrate. The manufacturing method of the exposure mask at the fourth viewpoint of the present invention is characterized by having: obtaining first information of the surface shape of the display main surface for each of the plurality of mask substrates, and displaying the aforementioned information measured by the measuring device. Flat of main surface

O: \ 100 \ 100I06.DOC 200523667 The second information manufacturing process that simulates the flatness of the main surface when the exposure device sets each mask substrate in the center structure of the mask of the exposure device. The manufacturing process of the corresponding relationship between the photomask substrate and the aforementioned 丨 information and the aforementioned second information; from the produced correspondence, the second information of the desired flatness is selected and displayed, and is separated from the aforementioned photomask substrates and prepared to have A process for forming a photomask substrate having the same surface shape as the second information in the 4th option which is in the aforementioned corresponding information; and a process for forming a desired pattern on the prepared photomask substrate . The method for manufacturing an exposure mask at the fifth viewpoint of the present invention is characterized by having: first information showing the surface shape of each mask substrate and the main surface of each mask substrate, and displaying the measurement information by a measuring device The correspondence between the flatness of the main surface and the mask holding structure of the exposure device is simulated in the correspondence between the second information of the flatness of the main surface when the exposure device is provided with each photomask substrate for a plurality of photomask substrates. , Choose to display the ^ th information of the desired flatness, and be prepared to have the same surface shape as the above-mentioned plurality of photomask substrates A and to have the same surface shape as the selected second information in a corresponding relationship with the aforementioned 丨A process of forming a mask substrate with a surface shape; and a process of forming a desired pattern on the prepared mask substrate. The manufacturing method of the exposure mask at the sixth viewpoint of the present invention is characterized by having a first process of obtaining the surface shape of the main surface of the photomask substrate and the photomask substrate, and obtaining the flatness of the main surface. A manufacturing process for simulating the second information of the flatness of the main surface when the exposure device sets each mask substrate with the mask clamping structure of the exposure device; and judging the main surface of the mask substrate obtained by the simulation user ^ Whether the flatness is suitable for its specifications, if listed

O: \ 100 \ 100106.DOC -8-200523667 If the process is suitable for its specifications, the aforementioned photomask substrate is processed to form an exposure photomask. The method for generating mask substrate information at the seventh viewpoint of the present invention is characterized in that: for each of a plurality of mask substrates, obtaining first information showing a surface shape of a main surface and a mask stage displayed on an exposure device; The manufacturing process of the second information of the flatness of the main surface before and after clamping; and correspondingly storing the photomask substrate and the first information and the second information. The method for generating mask substrate information at the eighth viewpoint of the present invention is characterized by a process of obtaining the information showing the surface shape of the main surface for each of a plurality of mask substrates; and in the obtained information , The shape of the main surface of the memory is displayed as convex information and the manufacturing process of the corresponding mask substrate. The method for generating mask substrate information at the ninth viewpoint of the present invention is characterized in that: the first information showing the surface shape of the main surface is obtained for each of a plurality of mask substrates, and the display is measured by a measuring device The flatness of the main surface and the mask holding structure of the exposure device simulate the second process of the second information of the flatness of the main surface when the exposure device sighs each mask substrate, and a process for the masks A memory process in which the substrate corresponds to the aforementioned first information and the aforementioned second information and is memorized. The method for manufacturing a semiconductor device at the tenth viewpoint of the present invention is characterized in that the exposure mask manufactured by the manufacturing method according to one of the first to third viewpoints is held on a mask stage of the exposure apparatus. The above process; a process of illuminating a pattern formed on the exposure mask by an illumination optical system, and imaging an image of the pattern on a desired substrate; and forming the desired substrate on the aforementioned substrate according to the aforementioned imaging The aforementioned imaged layers are patterned and used in the process of forming semiconductor elements. O: \ IOO \ 100106.DOC -9- 200523667 The method for manufacturing a semiconductor device at the eleventh viewpoint of the present invention is characterized by having a substrate having a main surface and a light-shielding body formed on the main surface. Pattern, and the surface shape of the peripheral area of the main surface is toward the edge side of the substrate, the exposure mask having a height lower than the surface height of the central area of the main surface is clamped on the mask stage of the exposure device. ; A process of illuminating a pattern formed on the aforementioned exposure mask by an illumination optical system, and then imaging an image of the pattern on a desired substrate by a projection optical system; and forming the desired substrate on the aforementioned substrate according to the aforementioned imaging The layer formed with the aforementioned image is patterned and used in a process for forming a semiconductor element. The reticle substrate at the twelfth viewpoint of the present invention is characterized by including a substrate having a main surface and a light-shielding body covering the main surface, and a surface shape of a peripheral area of the main surface is directed toward an edge portion of the substrate. The height is lower than the surface in the central area of the main surface. The exposure mask at the thirteenth viewpoint of the present invention is characterized by including a substrate having a main surface and a pattern including a light-shielding body formed on the main surface, such that the surface shape of the peripheral area of the main surface faces the foregoing. The edge side of the substrate has a shape lower than the surface of the central area of the main surface. The server at the fourteenth viewpoint of the present invention is characterized by having a means for memorizing and including a process of displaying a webpage of correspondence information, and the correspondence relationship displays a first surface shape of each photomask substrate and each photomask substrate. 1 Correspondence between the second information of the information and the flatness of the aforementioned main surface before and after clamping of the reticle stage of each reticle substrate exposure device; for receiving a plurality of reticle substrate requests from customers The information is O: \ 100 \ 100106.DOC -10- 200523667; means for transmitting the aforementioned web page in a displayable form on the customer's side; and receiving such information from the aforementioned client transmitting the aforementioned web page The method for processing the photomask substrate application information is described. ... The above and other objects of the present invention, as well as the characteristics of the chastity, can be understood from the description and the attached drawings in this specification. [Embodiment] Hereinafter, an embodiment (hereinafter, referred to as an embodiment) of the present invention will be described with reference to the drawings. • (First Embodiment) Fig. 1 is a flowchart showing a method for manufacturing an exposure mask according to a first embodiment of the present invention. First, a U-shaped mask substrate A to κ is formed on a quartz substrate having a thickness of about 6 mm to form a film covering a light shielding body at an angle of 152 mm, and the mask substrates A to K are flattened by the substrate. Degree 置 | set (made by Nidec) to measure the main surface, and obtain the surface shape and flatness of the main surface of the 11 photomask substrates A to K held by the vacuum chuck on the photomask stage of the exposure device ( Step S1) ○ Here, the flatness of the corner region 142 (the first region) where the edge region 142 of the photomask substrate is removed in FIG. 2A is measured. Area i! It is a pattern formation area which actually forms a pattern. In addition, in this embodiment, the surface shape of the 丨 th area 丨 is convex and concave as shown in Fig. 2 (b) and Fig. 2 (c) respectively, which means that for the line connecting the two ends of the ith area k, the above is The convex shape is a concave shape. Figures 3 (a) and 3 (b) show the overview of the surface shape being convex, and the bottom being concave, respectively.

O: \ 100 \ 100106.DOC -11-200523667 On the other hand, the shape of the surface of the second area 2 is convex or concave, as shown in the training institute. Area] The surface has a low shape (convex) or a high shape (concave). The second area 2 will be described in detail in the second embodiment. Next, based on the results obtained above, each of the 11 mask substrates A to K is classified into each type of the main surface surface shape (step S2). The results are shown in Table 1. The types of surface shapes (i-th information) can be classified into four types of convex type, concave type, saddle type, and fish plate type from the above measurement results. In addition, the measurement value (second information) of the flatness of the first area 1 before the mask stage is clamped is controlled in a range of 0.4 ㈣ to 0.5 / xm. Figures 3 (c) and 3 (d) show the overview of those whose surface shapes are saddle and fish plate, respectively. [Table 1] Flatness before clamping substrate (/ xm) Surface shape before clamping Flatness after clamping 0mi) A 0.5 convex 0.4 B 0.4 convex 0.4 C 0.45 convex 0.4 D 0.5 concave 0.8 E 0.5 Concave 1.0 F 0.4 Saddle 0.9 G 0.5 Saddle 0.9 Η 0.4 Fish plate 0.4 I 0.5 Fish plate _______ 0.4 J 0.5 Fish plate (rotate 0.2 K 0.5 Fish plate (rotate 0.3 O: \ 100 \ 100106.doc -12- 2Q0523667) 'In the mask stage of the ArF wafer exposure apparatus (manufactured by Nikon Corporation), the above-mentioned 11 photomask substrates A to κ were sequentially held by a vacuum chuck, and the photomask substrates were measured by the vacuum chuck The flatness of the main surface (step S3). Here, the flatness of the first area 1 (Fig. 2 (a)) with a 42 mm angle from the edge area of the photomask substrate is removed. As shown in Table 丨, about n pieces of photomask substrates A to K, the corresponding relationship between the type of surface shape and the flatness value before and after clamping with a vacuum chuck (step S4). According to Table 1, it is known that the surface shape is a convex photomask substrate A ~ c The flatness after clamping is the same as or slightly better than before clamping, but the surface shape is concave and saddle-shaped mask substrates D ~ G The flatness is deteriorated after being clamped. In addition, regarding a mask substrate having a surface shape of a fish plate, the mask substrate on the mask stage is arranged in a specific direction for the clamp (photomask). Substrate Η, I), and the direction orthogonal to the specific direction, that is, the direction where it is condensed by 90 degrees, and the position of the clamped photomask substrate (photomask substrate J, K) is changed and measured flat The results are shown in Table 1. It can be seen that the flatness after the vacuum chuck of the fish plate type photomask substrate Η ~ κ is changed due to the arrangement direction of the photomask substrate to be clamped. That is, it can be obtained It is known that the flatness after the vacuum chuck of the fish plate type photomask substrate Η ~ κ will change due to the position of the photomask substrate after the vacuum chuck. Specifically, as the photomask substrate Η,] [ The arrangement direction of the mask substrate on the mask stage is arranged in a specific direction to the chuck, and the curved edge of the fish plate type will touch the chuck of the mask stage of the exposure device, and its flatness can hardly be improved. But on the other hand, if it is matched with the mask substrate like K: \ 100 \ 100106.DOC -13-200 523667 placed in the direction of 90 degrees rotation, the arc edge of the fish plate type will not touch the chuck of the mask stage of the exposure device, and the flatness will be less than 0.3 spleen, it can be confirmed that the flatness has improved (Table 0. In addition, the mask substrates A to G of other surface shapes are not shown in Table 丨 as the rotation, because it is understood that even if they are rotated, the flatness cannot be improved. Secondly, as described above, it is known in advance The types of surface shapes before and after the vacuum chuck is clamped, and the flatness values are included. The mask substrate groups including the mask substrates a to k are prepared separately from the 11 mask substrates A to k. A mask substrate having a flatness and a mask substrate having the same kind of surface shape (step S5). Here, a description will be given of a field substrate having the same shape as that of the mask substrate J for the separately prepared mask substrate. In addition, the photomask substrates A to K and the photomask substrates prepared separately are those in which the flatness of the pattern formation area is controlled within a specific specification, and the difference in surface shape is caused by dispersion. Next, a protective film is coated on the separately prepared photomask substrate. After that, the well-known manufacturing process of the exposure mask is continued. That is, the desired pattern is drawn by the protective film of the electronic wire drawing device on the photomask substrate. Next, the protective film is developed to form a protective film pattern. Next, the protective film pattern is used as a photomask, and the photomask substrate is etched by a reactive ion carving device to form a photomask pattern. Then, the protective film pattern is peeled off, and the surface of the mask substrate is cleaned to complete the exposure mask for forming a desired mask pattern (step S6). The desired pattern mentioned above includes a circuit pattern or a pattern for alignment and a pattern for alignment. The exposure mask thus obtained was set in an ArF wafer exposure apparatus, and O: \ 100 \ 100106.DOC -14-200523667 was measured. The flatness of the main surface can be recognized as a good value of 0.2 μm. Then, if an exposure mask having such a high flatness is clamped on a mask stage of an exposure device, and then the pattern formed on the above-mentioned exposure mask is illuminated by an illumination optical system, and the projection optical system is used in the The desired exposure method for imaging the above pattern on a substrate, the focus tolerance during wafer exposure will be particularly increased and the productivity of semiconductor products such as DRAM will be greatly improved. According to this embodiment, an effective manufacturing method of the exposure mask can be realized, which can solve the deterioration of the flatness of the main surface of the mask substrate after the mask substrate is clamped on the mask stage of the wafer exposure device. , Caused by the problem of reduced product productivity. The reticle substrates A to K and the reticle substrates prepared separately as described above may be formed in advance. The means for holding the mask substrate on the mask stage is not limited to a vacuum chuck. (Second Embodiment) In the first embodiment, the surface shape and flatness are obtained only for the i-th area of the main surface of the mask substrate 丨 shown in FIG. 2 (a) (step S1), but in this embodiment The middle system obtains the surface shape and flatness of the 2 = £ field of the i-th region 丨 and the second region 2 surrounding the i-th region 丨, respectively. Here, the first region 1 is a rectangular region having a side of 142 mm with the center of the mask substrate as the center of the region, and the second region 2 surrounds the first region 1 and has a side length of 15 °. Mouth-shaped area (from the rectangular y-shaped area, the area with the rectangular shape as the center is removed, and the area of “the car is a small rectangular area.”) eThe vacuum chuck when it is placed on the reticle stage of the exposure device, its clamping area

O: \ 100 \ 100106.DOC -15- 200523667 (mask holding area) is almost included in the second area 2. That is, in the second area 2, almost all the force for holding the photomask substrate on the photomask stage is effective. —In the extension line of the conventional technology, not only the pattern formation area but also the flatness of the mask holding area is considered to be expanded to the first area i, thereby managing the flatness of the area including the mask holding area. However, in the current mask manufacturing technology, it is very difficult to planarize the entire main surface of the mask substrate 丨. At present, the flatness of the main surface of the mask substrate k sharply deteriorates at the edge of φ. 1 area 1, although the flatness of the central portion of the mask substrate 1 is acceptable, the flatness of the edge portion of the mask substrate 丨 is deteriorated, so the flatness of the entire main surface of the mask substrate 丨 will be reduced. The measurement results. Therefore, in this embodiment, as described above, the first area 1 including the mask center is surrounded, and the first area 1 is surrounded! The two regions of the second region 2 of the region i acquire the surface shape and flatness. Using a substrate flatness measuring device (manufactured by NI Corporation), the principal and surface flatness and surface shape of a photomask substrate formed by forming a light-shielding body on a quartz substrate having an angle of 152 mm and a thickness of approximately 6 mm were prepared, and the first The flatness and surface shape of the area 1 and the flatness and surface shape of the second area 2 were prepared from 13 photomask substrates A to M, respectively. Next, the i 3 photomask substrates A to M were sequentially installed in an ArF wafer exposure apparatus (manufactured by Nikon Corporation), and the flatness of the main surface of each photomask substrate after being clamped by a vacuum chuck was measured. Next, a correspondence relationship between the types of surface shapes of the 13 photomask substrates A to M and the flatness values of the first and second regions before and after being clamped by the vacuum chuck is made. The results are shown in Table 2. O: \ 100 \ 100106.DOC -16-200523667

[Table 2] 1st area (before holding) 2nd area (before clamping) 1st area (after clamping) Flatness of photomask substrate (μπι) Surface shape flatness 0m) Surface shape flatness (μιη) A 0.3 convex 4 convex 0.3 B 0.3 convex 3 concave 1.5 C 0.35 convex 4 fish plate 0.6 D 0.35 convex 4 fish plate (90 degree rotation) 0.3 E 0.35 convex 4 saddle 1.0 F 0.35 concave 4 convex 0.3 G 0.35 concave 4 convex 0.8 Η 0.35 concave 4 fish plate 0.8 I 0.35 concave 4 fish plate (90 degree rotation) 0.4 J 0.35 concave 4 saddle 0.9 K 0.5 saddle 3 saddle 1.0 L 0.5 fish plate 3 fish plate 0.9 MU 0.4 fish plate 3 fish plate (90 degree rotation) The surface shapes of 0.4 1 of the three mask substrates A to M are classified into four types: convex, concave, saddle, and fish plate. The surface shapes of the first and second regions of the mask substrate A having a simple convex shape are all convex. On the other hand, the surface shape of the photomask substrate B like a hat with a brim is convex in the first region and concave in the second region. It is known from Table 2 that the surface shape of the photomask substrate in the second area caused by clamping by the vacuum chuck is deteriorated, and the surface shape of the second area is concave or saddle. In addition, the photomask-shaped photomask substrates C, d, η, I, O: \ I00 \ 100106.DOC -17- 20.0523667 L, M ′ are different in the orientation direction of the photomask substrate on the photomask stage. Instead, different results are displayed. Specifically, if the arrangement direction of the reticle substrate on the reticle table is arranged in a specific direction with respect to the chuck, the arc edge of the fish plate type will touch the chuck of the reticle table of the exposure device to reduce flatness. However, if it is arranged in the direction of rotating 90 degrees, the radian edge of the fish plate type will not touch the chuck of the mask stage of the exposure device, and the flatness becomes 0.4 μχη or less. The flatness of almost all the mask substrates arranged in this direction (rotated by 90 degrees) is improved. In addition, it can be confirmed that the flatness of the first region after being clamped by the vacuum chuck is almost independent of the surface shape of the first region of the clamping shovel. That is, the shape change of the main surface of the mask substrate before and after being clamped by the vacuum chuck is almost determined by the surface shape of the second region. In addition, 'the flatness of the second area is compared with the flatness of the first area. Although the value is exceptionally poor, it can be confirmed that the surface shape of the second area is convex. When it is held by a vacuum chuck, The surface shape of the first area of the mask substrate hardly changed. From the above, the types of the surface shapes of the first region 1 and the second region 2 are prepared for a plurality of photomask substrates, and the values correspond to the flatness values of the main surface of the photomask substrate before and after being clamped by a vacuum chuck The relationship can be used to manage the mask fire disk. The domain does not need to be expanded to more than necessary. The flatness of the first region 1 does not need to be more severe than necessary. It can use realistic values, and consider the surface of the second region 2. The shape can be more solid | Actually select a mask substrate with little change in flatness of the main surface of the mask substrate before and after clamping by the vacuum disk. O: \ 100 \ I00106.DOC -18- 200523667 Secondly, as described above, the types of surface shapes of the first region 1 ′ and the second region 2 before and after being clamped by a vacuum chuck in advance, and the main surface of the photomask substrate In the mask substrate group including the 13 mask substrates A to M of the rear flatness value, a mask substrate having a flatness conforming to the specifications and a surface having the same kind are prepared separately from the 13 mask substrates A to M. Shaped photomask substrate. Here, the separately prepared photomask substrate is prepared to have the same surface shape as the photomask substrate F (the first region is concave and the second region is convex). After measuring # the photomask substrate, the flatness of the first area is 0.3 ° or less, and the flatness of the second area is 4 μm or less. Next, a protective film is applied on the photomask substrate. After that, the manufacturing process of the exposure mask of the conventional manufacturing method is continued. That is, a desired pattern is drawn by a protective film on a photomask substrate by an electronic wire drawing device. Next, the protective film is developed to form a protective film pattern. Next, the protective film pattern is used as a photomask to perform a mask substrate light-shielding body etching process using a reactive ion etching device to form a light-shielding body pattern. Then, the protective film pattern is peeled off, and then the surface of the photomask substrate is cleaned to complete the exposure mask for forming a desired photomask pattern. The desired pattern mentioned above includes a circuit pattern, or a circuit pattern and a pattern for alignment. The thus obtained exposure mask was set in an ArF wafer exposure apparatus and the flatness of the first region was measured. A good flatness of 0.2 μm was confirmed. Then, by holding such a high-flatness exposure mask on the mask stage of the exposure device, the illumination optical system is used to illuminate the pattern formed on the above-mentioned exposure mask. The exposure method of the image on the desired substrate (for example, a substrate coated with a protective film), then O: \ IOO \ 100106.DOC -19- 200523667 The focus tolerance of the Japanese circle exposure day will be increased, and Significantly improve the productivity of other semiconductor products. In this way, this embodiment is also the same as the j-th embodiment. It can provide a manufacturing method of the exposure mask, which can effectively solve the problem of holding the mask substrate on the mask stage after the wafer is exposed. The deterioration of the flatness of the surface causes a reduction in product productivity. The β photomask substrates A to M and the photomask substrate prepared separately above may be formed in advance. The method of holding the mask substrate on the mask stage is not limited to a vacuum chuck. In addition, according to Table 2, if the surface shape of the second area is convex, it is sandwiched by Shinji. After the disk is clamped! The flatness of the area is good, so it is also possible to use a method of making a mask substrate or an exposure mask whose surface shape is convex in the second area. In the second area, the above-mentioned surface shape, that is, the convex mask substrate ^ exposure mask, for example, in the edge area of the quartz substrate or more inward than the area • ^ area (central area), its central area part Can be obtained by using rapid grinding rate =. Specifically, it can be obtained by polishing the main surface of the quartz substrate with a polishing apparatus in a longer period of time than before. Thereafter, a mask substrate is formed by a conventional method to obtain a mask substrate, and an exposure mask can be obtained by patterning the mask. 々Then, an exposure mask forming the second area having such a specific surface shape (convex here) is clamped on a mask stage of an exposure device, and is formed by illuminating the above-mentioned exposure mask with an illumination optical system. Pattern on the substrate (for example, a substrate coated with a protective film)

O: \ 100 \ 100106.DOC -20- 200523667 board), the exposure method for imaging the above pattern image is the same as the first embodiment, and the focus tolerance during wafer exposure will greatly increase and increase greatly. Productivity of semiconductor products such as DRAM. In addition, conventionally, a quartz substrate is polished to make the entire main surface as flat as possible. Therefore, in order not to make a significant difference in the polishing ratio, the lengthening of the polishing time was not intentionally controlled. Therefore, even if the surface shape of the second region becomes convex or concave due to the dispersion of polishing, the degree is significantly smaller than that of the mask substrate and the exposure mask of this embodiment. (Third Embodiment) In this embodiment, the surface shape of the main surface of the mask substrate corresponding to the surface shape of the main surface of the mask substrate after being clamped by the vacuum chuck is obtained by simulation. First, the flatness of the pattern formation region (the first region υ in FIG. 2 (a) was measured by a substrate flatness measuring device (manufactured by NI Corporation), and a towel was formed on a quartz substrate having a thickness of about 6 mm at a surface angle of 152, and was formed The surface shape and flatness of the main surface of the mask substrate made of a light-shielding body, and 13 mask substrates A to M with different surface shapes and flatness were prepared.

Next, the chuck structure of the ArF wafer exposure apparatus (manufactured by Nikon Corporation) and the flatness of the main surfaces of the above-mentioned 13 photomask substrates A to M were measured using a finite element method to simulate the The reticle stage of the ArF wafer exposure device sequentially smoothes the major surfaces of the reticle substrates A to M when the 13 reticle substrates a to m are sequentially held by a vacuum chuck. Alternatively, an analytical method may be used instead of the finite element method. Next, in order to confirm whether the simulation is correct, the above-mentioned three photomask substrates A to M are sequentially held by the vacuum chuck in the above ArF O: \ 100 \ 100106.DOC -21-200523667 wafer exposure device And measure the flatness of the main surface of each mask substrate after being clamped by the vacuum chuck. As a result, the flatness of the main surface of the mask substrate A M obtained by the simulation was measured with the main surface of the photomask substrate A to m obtained by the substrate flatness measuring device actually installed in the μ wafer exposure device. The flatness is as shown in Table 3. It can be confirmed that the measurement data of the photomask substrate A ~ M is almost $ 7 in the photomask substrate. The flatness of the flat room after the actual miscarriage obtained by the insect simulation (/ im) Surface shape _ flatness Qum) flat i ^ Tang i um) A 0.3 convex -_ 0.3 〇2 B 0.3 convex __1.5 sale J 15 C 0.35 convex __ 0.6 D 0.35 convex 0.3 V / · Vl 〇3 E 0.35 convex_ 1.0 V /. J 10 F 0.35 concave 0.5 0 3 G 0.35 concave__ 0.7 0.8 Η 0.35 concave__ 0.8 0.8 I i 0.35 concave_ ^ 0.5 0.4 J 0.35 concave —__ 0.9 0 9 K 0.5 Saddle _ 1.3 ν ^ · 7 1.0 L 0.5 Fish plate ^ _ 0.9 0.9 M 0.4 Fish plate ___ 0.4 0.4 疋 Among the photomask substrates, there is only the following difference [Table 3] That is, for the photomask substrate, the aforementioned When the correspondence between the types of surface shapes in the embodiment and the values of the flatness before and after clamping by the vacuum chuck, O: \ 100 \ 100106.DOC -22- 200523667 can Before and after the value of the flatness of the vacuum chuck holding the obtained value is replaced with the use of simulation. From this result, the flatness of the pattern formation area (the first area 1 in FIG. 2 (a) 1) was measured by a substrate flatness measuring device (manufactured by NI Corporation), and the surface shape of the main surface of the photomask substrate was determined. The structure of the mask chuck of the exposure device and the flatness of the main surface of the mask substrate that has been obtained, and the master of the mask substrate when the vacuum chuck sequentially clamps the mask substrate to the mask stage of the exposure device The surface shape of the φ plane can predict the surface shape of the main surface of the mask substrate when the mask substrate is actually set in a wafer exposure apparatus. Therefore, it is possible to manage the surface shape and flatness of the main surface of the mask substrate, which is more accurate than the outside. Fig. 4 is a flowchart showing a method for manufacturing an exposure mask according to a third embodiment of the present invention. In the flowchart of FIG. 4, in step S3, the surface shape of the main surface of the mask substrate when the mask substrate is clamped by the vacuum chuck is obtained by simulation. Then, in step S4, the correspondence between the surface shape, the flatness obtained using the substrate flatness φ degree measuring device, and the flatness obtained using simulation is made. The steps SI, S2, S5, and S6 are the same as the flowchart in FIG. Next, in step S5, the following photomask substrates are prepared separately from the above-mentioned 13 photomask substrates A to M. The surface shape of the main surface of the substrate is measured by a substrate flatness measuring device, and the photomask substrates are sequentially ordered by a vacuum chuck. The shape of the surface of the main surface of the mask substrate when it is clamped on the mask stage of the exposure device is known to be a flatness of 0 μm by simulation. After that, the manufacturing of the exposure mask of the conventional manufacturing method is continued at step S6. O: \ 100 \ 100106.DOC -23 · 200523667 manufacturing process. That is, the desired pattern is drawn by the protective film on the photomask substrate by the electronic wire drawing device. Next, the protective film is developed to form a protective film pattern. Next, the protective film pattern is used as a photomask, and the mask substrate light-shielding body is etched by a reactive ion etching device to form a light-shielding body pattern (mask pattern). . After that, the protective film pattern is peeled off, and then the surface of the mask substrate is cleaned to complete the exposure mask for forming a desired mask pattern. When the side exposure mask was actually set on an ArF wafer exposure device, and the surface shape and flatness of the main surface were measured using a substrate flat φ candidity measuring device, it was confirmed that the flatness was as good as 0 · 2 / xm simulated. . Then, if an exposure mask with such a high flatness is clamped on the mask stage of the exposure device, and then the pattern formed on the exposure mask is illuminated by the illumination optical system, and the projection optical system is used to An exposure method for imaging the above pattern on a desired substrate (for example, a substrate coated with a protective film) will increase the focus tolerance during wafer exposure, and greatly increase the productivity of semiconductor products such as DRAM. • In this way, this embodiment is also the same as the first embodiment and the second embodiment, which can realize an effective method for manufacturing an exposure mask, which can solve the problem of holding the mask substrate behind the mask stage of the wafer exposure apparatus. The deterioration of the flatness of the main surface of the photomask substrate caused a decrease in product productivity. The reticle substrates A to M and the reticle substrates separately prepared above may be formed in advance with alignment marks. The means for holding the mask substrate on the mask stage is not limited to a vacuum chuck. In each of the above-mentioned embodiments, for example, the wafer exposure device may not be an ArF wafer exposure device. In addition, after the mask pattern is formed, the light O: \ 100 \ 100106.DOC -24- 200523667 can be used to determine the flatness of the main surface of the mask substrate. The measured data can be used to simulate the time when the mask substrate is set in the exposure device. Surface shape of the main surface of the photomask substrate. Therefore, since the deformation of the main surface of the mask substrate when the mask pattern is formed is also considered in the results obtained by simulation, the surface shape and flatness of the main surface of the mask substrate can be more accurately determined. management. In addition, the photomask is not limited to those for ArF or KRF, and can be applied to, for example, a reflective photomask for vacuum ultraviolet exposure, a photomask for X-ray exposure, and a photomask for electron beam exposure.

(Fourth Embodiment) In this embodiment, the surface shape of the main surface of the mask substrate corresponding to the surface shape of the main surface of the mask substrate after being clamped by the vacuum chuck is obtained by simulation. Fig. 5 is a flowchart showing a method for manufacturing an exposure mask according to this embodiment. In step si, the flatness of the pattern formation area (the 丨 area of FIG. 2 (a) 丨) is measured by a substrate flatness measuring device (manufactured by NI Corporation) to obtain an angle of 152 mm and a thickness of about 6 mm. The surface shape and flatness of the main surface of one mask substrate formed by forming a light-shielding body on a quartz substrate. Next, in step S2, the reticle structure of the ArF wafer exposure apparatus (manufactured by Nikon Corporation) and the flatness of the main surface of the above-mentioned mask substrate are measured using the elemental method by simulation. The flatness of the main surface of the photomask substrate when the above-mentioned one photomask substrate is sequentially held on the photomask stage of the ArF wafer exposure device in a lost disk. Alternatively, an analytical method may be used instead of the finite element method. Next, in step S3, it is judged whether the aforementioned flatness of the photomask substrate O: \ 100 \ 100106.DOC -25- 200523667 obtained by simulation is suitable for its specifications. If it is judged that it is suitable for its specifications, then Step S4 enters the manufacturing process of the exposure mask. On the other hand, when it is determined in step S3 that the flatness of the photomask substrate is not suitable for the specifications, the light-shielding film on the quartz substrate of the photomask substrate is peeled off in step S5. Next, the surface of the quartz substrate is polished in step S6. Next, in step S7, a light-shielding film is newly formed on the polished surface of the quartz substrate, and step S1 is repeated to measure the flatness. The Luben embodiment is also the same as the first embodiment, the second embodiment, and the third embodiment. 'It is possible to realize an effective method for manufacturing an exposure mask, which can solve the problem of holding the mask substrate in the wafer exposure device. After the mask stage, the flatness of the main surface of the photomask substrate is deteriorated, which causes a problem that the productivity of the product is reduced. In addition, the above-mentioned mask substrate may be formed with a mark for alignment. The means for holding the photomask substrate on the photomask stage is not limited to a vacuum chuck. In addition, for example, a wafer exposure apparatus other than an ArF wafer exposure apparatus may be used. In addition, it is also possible to measure the flatness φ degree of the main surface of the mask substrate again after the mask pattern is formed, and use the measurement data to simulate and obtain the surface shape of the main surface of the mask substrate when the mask substrate is set in the exposure device. As a result, the deformation of the main surface of the mask substrate when the mask pattern is formed will also be considered in the results obtained by simulation. Therefore, the surface shape and flatness of the main surface of the mask substrate can be performed with higher accuracy. management. In addition, the photomask is not limited to those for Arp or KRF, and can be applied to, for example, a reflective mask for vacuum ultraviolet exposure, a mask for X-ray exposure, and a mask for electron beam exposure. (Fifth Embodiment) Next, description will be given on the mask substrate information O: \ 100 \ 100106.DOC -26-200523667 of the fifth embodiment of the present invention. The method for generating the photomask substrate material 吝 a + 丄 极 贝 σί1 in this embodiment is provided with: for each of the 11 photomask substrates A to K in Table i, according to the procedure of FIG. 1 according to the β 1 port, for example, steps S3, S3, the process of obtaining the surface shape of the main surface and the flatness of the main surface before and after clamping; and about 11 photomask substrates A ~ κ, making a photomask as shown in Table 丄

The correspondence relationship H between the type of the substrate and the surface shape and the flatness value, and a process of memorizing the correspondence in a computer (PC) or the like. The above correspondence stored in a computer (PC) or the like may be displayed. Specifically, for example, a sticker containing printed contents may be attached to a container containing a mask substrate A to K. By adopting such a display method for the above correspondence, it is easy to manage the light that can solve the problem of lowering the productivity of the product caused by the deterioration of the flatness of the main surface of the photomask substrate after the photomask substrate is held on the photomask stage of the wafer exposure device. Cover substrate. In addition, after step S2 in the flowchart of FIG. 1, information showing that the surface shape of the main surface is convex is displayed in the information obtained in step S2 of the flowchart of FIG. Φ, and a mask substrate corresponding thereto is added. Correspond, and store the correspondence in a computer (PC) or the like, and other mask substrate information generation methods that are different from the mask substrate information generation method of this embodiment can be performed. At this time, it is also the same as the method of generating the mask substrate information in this embodiment, and for this correspondence, the display of the mask substrate can also be easily managed by the display of a sticker or the like. Here, eleven photomask substrates A to K in Table 1 are taken as an example to describe the method of generating photomask substrate information. However, the same photomask substrate information can be generated for the 13 photomask substrates A to M in Table 2. O: \ 100 \ 100106.DOC • 27- 200523667 (sixth embodiment) Fig. 6 is a diagram showing a server system pattern according to a sixth embodiment of the present invention. In the fifth embodiment, a sticker is used as an example for display, but in this embodiment, it is displayed on a server. Therefore, the method of generating the mask substrate information in this embodiment can be used for e-commerce (e-commerce) . First, for example, a table corresponding to Table 丨, Table 2 or Table 32 is prepared and displayed in the production office 11, and a web page containing the table as information is stored in the server 12. The server 12 is a memory means for memorizing the hardware and the like of the web page. The server 12 is connected to most customers (customer devices) ^ 3 via the Internet. Dedicated lines can also be used instead of the Internet. Alternatively, a combination of the Internet and dedicated lines may be used. The server 12 is provided with: a known means for receiving the request information from the customer 13 for the above-mentioned web page; a known means for performing the processing for transmitting the above-mentioned web page in a form that can be displayed on the client side; The client 13 knows how to process the application information of the substrate mask. This conventional means is composed of, for example, a LAN card, a memory device, server software, a CPU, and the like, and performs desired processing in coordination. When the server 12 receives the request message from the customer 13 for the above webpage, it transmits the information necessary for the screen 14 shown in FIG. 3 on the display of the customer 13 to the customer 13. On the day 14 there are displayed: Form 15 with the contents not shown in Table 1, selecting the desired substrate mask and confirming it, δ tolerance box 16, and the substrate mask confirmed in the purchase confirmation box. The master and the master send the determined image symbol (icon) i7 to the server 12. In Fig. 6, for simplicity ', it is shown as follows! Form 15 shown, but

O: \ 100 \ 100106.DOC -28- 200523667 You can also use a form with the contents shown in Table 2 or Table 3. According to this embodiment, since a photomask substrate having a high flatness behind a photomask holding a photomask substrate and being exposed to a wafer can be purchased, a server can be realized, which can effectively solve the problem of clamping photomask substrates to a wafer for exposure. After the photomask stage of the device, the flatness of the main surface of the photomask substrate is deteriorated, which causes a problem that the productivity of the product is reduced. As mentioned above, although the embodiment of this invention was described, this invention is not limited to this embodiment. For example, in the above embodiment, a convex-shaped mask substrate can obtain good results, but there may be cases where a concave-shaped mask substrate can obtain good results due to the exposure device provided with the mask substrate. That is, because the flatness of the reticle substrate after the vacuum chuck greatly affects the shape matching of the reticle chuck table and the reticle chuck surface, the reticle should be selected according to the reticle chuck table used. The shape of the main face will change. In addition, in the above embodiments, the case of a mask substrate for an ArF wafer exposure device has been described, but it can also be used for other mask substrates. For example, a mask substrate for a KrF wafer exposure device and vacuum ultraviolet light A reflective i mask substrate for exposure, a mask substrate for X-ray exposure, a mask substrate for electron beam exposure, and the like. · In addition, each of the above-mentioned embodiments includes inventions of various stages, and various inventions can be extracted from appropriate combinations of the disclosed plural constituent elements. For example, even if several constituent elements are deleted from all the constituent elements shown in the embodiment, when the problem described in the problem to be solved by the invention can be solved, the constituent elements whose constituent elements are deleted can be extracted to As an invention. Others may be used without departing from the scope of the present invention.

O: \ 100 \ 100106.DOC -29- 200523667 Various deformations are performed. [Effects of the Invention] As explained above, according to the present invention, it is possible to realize an effective method for manufacturing an exposure mask, a method for generating a mask substrate information, a method for manufacturing a semiconductor garment, a mask substrate, an exposure mask, and a temple suit. The device can effectively solve the problem that the productivity of the product is reduced due to the deterioration of the flatness of the main surface of the photomask substrate after the photomask substrate is held on the photomask stage of the wafer exposure device. [Brief Description of the Drawings] [Figure 1] Figure 1 is a flowchart showing a manufacturing method of an exposure mask according to the first embodiment of the present invention. [Fig. 2] Fig. 2 (a) is a plan view of the main surface of the mask substrate 1, which is a diagram illustrating the first and second regions; Fig. 2 (b) is a diagram illustrating the first region of the mask substrate Figure, which is a cross-sectional view of the first region 1; Figure 2 (c) is a diagram illustrating the first region 1 of the photomask substrate, that is, other cross-sectional views of the first region 1; Figure 2 (sentence is The pattern of the second region 2 of the photomask substrate, that is, the cross-sectional view of the second region 2. [FIG. 3] FIG. 3 (a) is a diagram illustrating the first region 1 of the photomask substrate, that is, the first A schematic perspective view of area 1; FIG. 3 (b) is a diagram illustrating the first area 1 of the photomask substrate, that is, other schematic perspective views of the first area 1; FIG. 3 (c) is a photomask substrate The pattern of the first region 1 is the other schematic perspective view of the region 丨; Figure 3 (d) is a diagram illustrating the first region 1 of the photomask substrate, O: \ 100 \ 100106.DOC- 30-200523667 That is another schematic perspective view of the first area 1. [Fig. 4] Fig. 4 is a flowchart showing a method for manufacturing an exposure mask according to a third embodiment of the present invention. [Fig. 5] Fig. 5 is a display Fourth implementation of the present invention [Figure 6] Figure 6 is a schematic diagram of a server related to the sixth embodiment of the present invention. [Description of main component symbols] 1 First area 2 Second area 11 Production Office 12 Server 13 Customer 14 Screen 15 Form 16 Confirmation Box 17 Image Symbol O: \ 100 \ 100106.DOC -31-

Claims (1)

200523667, * Scope of patent application: 1. A photomask substrate information generating method, which is characterized by having the following steps: The step of obtaining the i-th information indicating the flatness of the main surface of the photomask substrate; Information and information about the mask holding structure of the exposure device, and obtaining the second information indicating the flatness of the main surface obtained by simulation when the photomask substrate is mounted on the exposure device; I obtain A step of simulating whether the flatness of the main surface of the photomask substrate meets specifications. 2 · A method for generating information on a photomask substrate, which is characterized by having the following steps: Each main surface of a plurality of photomask substrates has a first area on which a main pattern is formed and a photomask held on a photomask stage of an exposure device. 2 areas while getting indication. A step of obtaining the first information of the flatness of the first area of the main surface of the mask substrates; a step of obtaining the second information of the flatness of the second area of the main surface of the photomask substrates; a step of obtaining the second information; The first information corresponds to the second information and is memorized. 3. The method for generating mask substrate information according to claim 2, further comprising the step of selecting a mask substrate whose surface shape is convex in the second region. 4. A photomask substrate information generating method, which is characterized by having the following steps: obtaining first information indicating the surface shape of the main surface of the photomask substrate, and indicating the above-mentioned main surface clamped in front of the photomask stage of the exposure device; Step of the second information of the flatness; Step of obtaining the third information of the flatness of the mask substrate arrangement O: \ 100 \ 100106.DOC 200523667 on the mask stage of the above exposure device; Rotate relative to the disc In the direction of 0 ° or 90 °, the above-mentioned master obtains the relevant poor information about whether the third information obtained through the above steps is in compliance with the specifications when clamping. 5. · A photomask substrate information generating method, which is characterized by having the following steps: The main surface of the photomask substrate has a second region where a main pattern is formed and a second region held by a photomask stage of the exposure device, so as to obtain the flatness of the first region indicating the main surface of the photomask substrate. The first information step is to obtain the second information indicating the flatness of the above-mentioned second area of the main surface of the mask substrate; to obtain the flatness of the above-mentioned first area when it is clamped to the mask stage of the exposure device A step of the third information; a step of making the photomask substrate correspond to the first, second, and third information and memorizing it. 6 · A method for generating information on a photomask substrate, which is characterized by having the following steps: obtaining first information indicating the surface shape of the main surface of the photomask substrate, and indicating the above-mentioned main surface held in front of the photomask stage of the exposure device Step 2 of the flatness of the flatness; obtaining the flatness of the main surface when the photomask substrate on the photomask stage of the exposure device is placed in a direction rotated 0 ° or 90 ° relative to the chuck and held Step of the third information; a step of memorizing the photomask substrates corresponding to the first, second, and third information. O: \ 100 \ 100106.DOC -2-200523667 The method for generating 5fL of the second cover substrate, which is characterized by the following steps:-Information on the surface shape of the main surface of the cover substrate, and the indication of clamping on the exposure Step 2 of the flatness of the above-mentioned main surface in front of the mask stage of the device; take the photomask and place the mask substrate on the mask stage of the exposure device at 0 or 90 degrees The third information step of the flatness of the main surface when clamped in the direction; the step of making each photomask substrate correspond to the first, second, and third information and memorizing it; 8. 9. 10. Steps for obtaining whether the above-mentioned third information meets the relevant information of the specification. For example, if the method for generating the photomask substrate information in any one of the items 5 to 7 is described, the _: the corresponding photomask substrates of 5 Ji Yi and the above-mentioned 1. The second, third and third information are displayed in a container containing a photomask substrate. A method for generating photomask substrate information is characterized by having the following steps: ^ In a plurality of photomasks, the surfaces representing the main surfaces are obtained respectively. The first information about the shape, and from the measuring device Measure the information about the flatness of the main surface and the mask holding structure of the exposure device, and obtain the second number that shows the flatness of the main surface obtained by simulation when each photomask substrate is installed in the exposure device. Information step; displaying each of the photomask substrates and the first information and the second information in a container containing each photomask substrate. The method for generating photomask substrate information as claimed in item 9, wherein the above photomasks are provided. The steps of memorizing and matching the substrate, the first information, and the second information, and displaying each of the photomask substrates corresponding to the above and the first information O: \ 100 \ 100106.DOC -3- 200523667 and the second information are displayed in In a container containing a photomask substrate. 11. The method for generating photomask substrate information according to any one of the claims 丨 to 7, 9 wherein a photomask pattern is formed on the main surface of the photomask substrate. 12. If requested The method for generating the mask substrate information of item u, wherein the above-mentioned mask pattern includes at least one of a circuit pattern or an alignment pattern. 13. If the method for generating the mask substrate information of any one of items 丨 to 7, 9 is requested, Where the above Marks for alignment are formed in advance on the mask substrate. • I4. The method for generating mask substrate information according to any one of the claims 1, 9, or 10, wherein the second information obtained by simulation above uses limited elements. The method of generating the photomask substrate information according to any one of claims 1, 2, 3, or 5, wherein the flatness is any one of surface shape, flatness, or surface shape and flatness. 16 · The method for generating mask substrate information according to the item 丨 丨, wherein the flatness is any one of the surface shape, flatness, or surface shape and flatness. 17. The mask substrate information according to the item 丨 3 A production method, wherein the flatness is any one of a surface shape, a flatness, or a surface shape and a flatness. 18. · A method for manufacturing a photomask substrate, which is characterized by having the following steps: a step of preparing a photomask substrate having a light-shielding body formed on a quartz substrate; and obtaining information indicating the flatness of the main surface of the photomask substrate Steps: ° Obtain the information from the above-mentioned D information and the cover mounting structure of the exposure device. O: \ 100 \ 100106.DOC -4- 200523667 The message “Get” indicates that when the above-mentioned photomask substrate is installed in the above-mentioned exposure device, The second information step of the flatness of the main surface obtained by the simulation; a step of judging whether the flatness of the main surface of the photomask substrate obtained by the simulation is in compliance with the specifications. 19. A method of manufacturing a mask substrate, which is characterized by having the following steps: a step of obtaining the first information of the flatness of the main surface of the mask substrate; the first information of φ 彳 and the mask clip of the exposure device Holding the relevant information of the structure and obtaining the second information indicating the flatness of the main surface obtained by simulation when the photomask substrate is installed in the exposure device; judging the photomask substrate obtained by the simulation The step of whether the flatness of the main surface meets the specifications; when it is judged that the flatness of the photomask substrate does not meet the specifications, the light-shielding body on the main surface of the photomask substrate is peeled off, and a new one is formed on the main surface of the substrate. Light-shielding body. Lu 20. —A method for manufacturing a photomask substrate, which is characterized by having the following steps: a step of obtaining first information indicating the flatness of the main surface of the photomask substrate; and holding the first information and the photomask of the exposure device Structure-related information 'obtaining the second information indicating the flatness of the main surface obtained by simulation when the photomask substrate is mounted on the exposure device; judging the main information of the photomask substrate obtained by simulation Steps of whether the flatness of the surface meets the specifications; When Bazhong judged that the flatness of the above mask substrates did not meet the specifications, O: \ 100 \ l 00106.DOC -5- 200523667 After shading the main surface of the substrate, a new shading body is formed on the main surface of the substrate. 21. The method for manufacturing a photomask substrate according to any one of claims 18 to 20, wherein the flatness is any one of a surface shape, a flatness, or a surface shape and a flatness. O: \ 100 \ 100106.DOC -6-