TW200403548A - Manufacturing method for exposure mask, generating method for mask substrate information, manufacturing method for semiconductor device, mask substrate, exposure mask and server - Google Patents

Abstract

The present invention realizes a method for manufacturing an exposure mask which is effective to solve a problem on the lowering of the yield of a product caused by the deterioration of the flatness of a mask base plate by chucking the mask base plate on the mask stage of a wafer aligner. The method comprises: acquiring the surface shape of the principal surface of each of a plurality of mask base plates, and the flatness of the principal surface thereof before and after chucking the mask base plate on the mask stage of the aligner (step S3); preparing the mask base plate having the surface shape with good flatness both before and after it is chucked on the mask stage (step S5); forming a desired pattern on the mask base plate, whereby the exposure mask is formed (step S6).

Description

发明 Description of the invention: [Technical Field] The present invention relates to a method for manufacturing a photomask, a photomask substrate, a semiconductor, an exposure photomask, and a servo. With the advancement of devices, devices < manufacturing methods, and photomask substrates have progressed along with the miniaturization of semiconductor devices, ^^ > has progressed, which has increased the requirements for photolithography processes < ,,, and, < * > At present, the rules for the installation of 1 have been reduced to 0.13 μm, and the pattern size to be controlled must be extremely precise to about 10 nm. As a result, in recent years, the problem of light lithography, which has been used for semiconductor manufacturing processes, has become increasingly significant. This subject is related to the flatness of the photomask substrate of the material process, which is the reason for the high precision of the pattern forming process. #, With the miniaturization and lack of lithography in the lithography process, the tolerances of the mask substrates must not be ignored, and the flatness of the mask substrate must not be ignored. Therefore, as a result of the present inventors' continuous research on the flatness of the mask substrate, the following matters were clearly understood. There are various shapes of the surface of the photomask substrate. Even with the same flatness, there are various shapes such as convex, concave, saddle, and other mixed types. Therefore, "even when the mask substrate is clamped by the vacuum chuck to the mask stage of the wafer exposure apparatus even with the same flatness, the photomask substrate or the vacuum chuck is compatible due to the compatibility of the mask stage or the vacuum chuck." In the case where a large amount of deformation occurs, in the case where there is almost no deformation, or in the case where the flatness is improved. This is because the flatness of the mask substrate after clamping is dependent on the light before clamping

O: \ 88 \ 88181.DOC -5- 200403548 The surface shape of the mask substrate, and even the same mask substrate will change due to the vacuum chuck. However, since only the flatness is managed in the past, the surface shape of the mask substrate is different, and the flatness of the mask substrate may be greatly deteriorated by clamping the mask substrate to the mask stage of the wafer exposure device. Then, it was understood that forming a pattern on a photomask substrate having such deteriorated flatness and using the obtained exposure photomask to manufacture a semiconductor device is the main cause of product productivity. [Problems to be Solved by the Invention] As described above, the inventors have compared the flatness of the photomask substrate before and after the photomask substrate is held on the photomask stage of the wafer exposure apparatus, and confirmed that the surface of the photomask substrate depends on the photomask substrate. There is a person whose shape has a poor flatness after clamping, and it is found that the deterioration of the flatness is the main cause of the decrease in product productivity. The present invention has been made in consideration of the above matters, and an object thereof is to provide an effective method of manufacturing an exposure mask, a method of generating a mask substrate information, a method of manufacturing a semiconductor device, a mask substrate, an exposure mask, and a server to solve the problem. Since the photomask substrate is held on the photomask stage of the wafer exposure device, the flatness of the photomask substrate is deteriorated, which causes a problem that the product productivity is reduced. [Summary of the Invention] The manufacturing method of the exposure mask of the first viewpoint of the present invention is characterized by having the first information selected from the surface shape of each display main surface of a plurality of photomask substrates, and displayed on each optical army Manufacturing process of the second information of the flatness of the main surface before and after clamping the photomask stage of the substrate exposure device; making the corresponding relationship between each photomask substrate and the aforementioned first information and the aforementioned second information, and making O: \ 88 \ 88181.DOC -6-200403548 Select the process to display the desired flatness in the corresponding relationship; separate from the aforementioned plurality of photomask substrates and prepare the second information and the corresponding relationship &lt; The surface shape shown in the first information has the same surface shape &lt; the process of forming the photomask substrate; the process of forming the desired pattern on the prepared photomask substrate; The method for manufacturing an exposure mask at the second viewpoint of the present invention is characterized by having one pair of each of a plurality of mask substrates, and displaying the surface shape of each mask substrate and the main surface of each mask substrate. Information, and the flatness of the aforementioned main surface before and after clamping by the mask stage of the exposure device of each light army substrate; 2 of the corresponding relationship of Besson is selected to display the second information of the desired flatness 2 ^ A process for preparing the aforementioned plurality of photomask substrates separately to prepare a photomask substrate having the same surface shape as that shown in the selected information corresponding to the 2nd information, and forming a desired photomask substrate on the prepared photomask substrate Process of patterning. The manufacturing method of the exposure mask at the third viewpoint of the present invention is characterized in that it has a process for obtaining the surface shape of the main surface <information for each of a plurality of mask substrates; the production of each of the aforementioned mask substrates and the aforementioned information The process of the corresponding relationship; the process of selecting and displaying the convex surface = the information of the shape 'from the corresponding relationship, and selecting the photomask substrate corresponding to the selected information from the plurality of photomask substrates; And the process of forming the desired pattern on the selected mask substrate. The manufacturing method of the exposure mask at the fourth viewpoint of the present invention is characterized in that: 1: each of the plurality of photomask substrates obtains the information of the surface shape of the main surface of the display, and displays the information by the measuring device. The measured flatness of the aforementioned main surface and

O: \ 88 \ 88181.DOC ry Ά αΊ 200403548 氺 of exposure device: + mask clamping structure to simulate the second information of the flatness of the aforementioned main surface when each light = plate is set in the aforementioned exposure device; process for making the aforementioned The system of the correspondence between the mask substrate and the aforementioned first information and the aforementioned second information &amp; 'is selected from the "Relationship 1 to display the desired flatness second asset:' and separated from the aforementioned plurality of mask substrates. A process for preparing a photomask substrate having the same surface shape as the second information of the choice and the i-information shown in the i-information in the aforementioned correspondence relationship; and forming a household hope on the prepared photomask substrate The process of drawing t. In the present invention, a method of manufacturing an exposure mask at a fifth viewpoint, which is characterized by: displaying first information of the surface shape of each mask substrate and a main surface of each mask substrate and displaying the measurement information by a measuring device; The correspondence between the flatness of the main surface and the mask holding structure of the exposure device is simulated in the correspondence between the second information of the flatness of the main surface when the exposure device is provided with each photomask substrate for the plurality of photomask substrates. , Choose to display the second information of the desired flatness and separate the plurality of photomask substrates and prepare to have the same surface shape as that shown in the second information in the corresponding relationship with the selection &lt; the second information A process of forming a mask substrate with a surface shape; and a process of forming a desired pattern on the prepared mask substrate. The manufacturing method of the exposed light army at the sixth viewpoint of the present invention is characterized by having a manufacturing process of obtaining a display of the surface shape of the photomask substrate and the main surface of the photomask substrate, and obtaining the flatness and exposure from the aforementioned main surface. The mask holding structure of the device is a process for simulating the second information of the flatness of the main surface when the exposure device sets each photomask substrate; and judging the flatness of the main surface of the photomask substrate obtained by the simulation If it is suitable for its specifications, if it is judged that it is suitable for O: \ 88 \ 88181.DOC -8-200403548, its specifications will be processed by the aforementioned mask substrate to form an exposure mask. The method for generating mask substrate information at the seventh viewpoint of the present invention is characterized by having: for each of a plurality of mask substrates, obtaining first information showing a surface shape of a main surface and a mask displayed on an exposure device The manufacturing process of the second information of the flatness of the main surface of the iC before and after the stage is clamped; and correspondingly to each of the aforementioned photomask substrate and the aforementioned first information and the aforementioned second information and memorizing the manufacturing process. The method for generating mask substrate information at the eighth viewpoint of the present invention is characterized by having a process of obtaining information showing the surface shape of the main surface for each of a plurality of mask substrates; and among the obtained information, The shape of the main surface of the memory is displayed as convex information and the manufacturing process of the corresponding mask substrate. In the present invention, a method for generating mask substrate information at the ninth viewpoint is characterized in that: the first information of the main surface of the display substrate is obtained for each of a plurality of mask substrates, and the display is measured by a measuring device; The manufacturing process of the second information of the flatness of the main surface and the mask holding structure of the exposure I, which simulates the flatness of the main surface when the exposure device is provided with the earth mask substrate; The aforementioned section! Information is a memory process in which the information corresponds to the aforementioned second information and is memorized. The method for manufacturing a semiconductor device according to the H) point of view of the present invention is characterized by comprising: clamping an exposure mask manufactured by the manufacturing method according to one of the first to third views described above to a mask of an exposure device; A process on a stage; a process of illuminating a pattern formed on the aforementioned exposure mask by an illumination optical system, and imaging a K-map image on a desired substrate; and forming the aforementioned desired substrate on the basis of the aforementioned imaging The aforementioned imaged layer is patterned and used in a process for forming a semiconductor device.

O: \ 88 \ 88181.DOC -9- 200403548 The method for manufacturing a semiconductor device at the eleventh viewpoint of the present invention is characterized by comprising a substrate having a main surface and a light-shielding body formed on the aforementioned I surface 1 Pattern, and the surface shape of the peripheral area of the main surface is toward the edge side of the substrate, the exposure mask having a height lower than the surface height of the central area of the main surface is clamped on the mask stage of the exposure device. ; The image formed on the aforementioned exposure mask illuminated by an illumination optical system = I, and a process of imaging the image of the aforementioned pattern on a desired substrate by a projection optical system; and the aforementioned desired substrate according to the aforementioned imaging The aforementioned image-forming layer is patterned and used in a process for forming a semiconductor element. The mask substrate at the twelfth viewpoint of the present invention is characterized by comprising a substrate having a main surface and a light-shielding body covering the main surface, and a surface shape of a peripheral region of the main surface is directed toward an edge portion of the substrate. The height is lower than the surface in the central area of the main surface. The exposure mask at the thirteenth viewpoint of the present invention is characterized by including a substrate having a main surface and a pattern including a light shielding body formed on the main surface, and the surface shape of the peripheral area of the main surface faces toward the front. The edge side of the substrate has a shape having a lower height than a surface of a central area of the main surface. In the present invention, the "word server of the 14th viewpoint" is provided with a means for performing a process of memorizing and displaying a webpage of correspondence information, and the correspondence relationship shows a shape of a surface of each mask substrate and a main surface of each mask substrate. No. 2 and the correspondence relationship between the second information of the flatness of the aforementioned main surface before and after clamping on the material table of each mask wire exposure device for a plurality of mask substrates; receiving from the customer to the aforementioned web page Required message

O: \ 88 \ 88181.DOC -10-; means for transmitting the above-mentioned net hundred in a displayable form on the customer side; and receiving the photomask substrate from the above-mentioned customer who transmitted the above-mentioned web page Means of processing application messages. The above-mentioned and other objects, and novel features of the present invention can be made clear by the drawings contained in and appended to this specification. [Embodiment] An embodiment (hereinafter, referred to as an embodiment) of the present invention will be described below with reference to the drawings. (First Embodiment) Fig. 1 is a flowchart showing a method for manufacturing an exposure mask according to a first embodiment of the present invention. First 'prepare a 152 mm angle on a quartz substrate with a thickness of about 6 mm to form a mold covering the light shield on the quartz substrate. A sheet of mask substrates A to κ, for these mask substrates A to K, A substrate flatness measuring device (manufactured by Nidec Corporation) was used to measure the surface shape and flatness of the main surface of the Π mask substrate a to κ obtained before the photomask stage of the exposure device was held by the vacuum chuck. (Step si). Here, the flatness of the corner region (first region) 1 of the edge region 142 mm of the photomask substrate except the mask substrate was measured in FIG. 2 (a). The first area 1 is a pattern formation area in which a pattern is actually formed. In addition, in this embodiment, the surface shape of the first region 1 is convex and concave as shown in FIG. 2 (b) and FIG. 2 (c), respectively, which means that the line L1 connecting the two ends of the first region 1 The shape is convex and concave. Figures 3 (a) and 3 (b) show the overview of the surface shape being convex and concave below, respectively. On the other hand, the shape of the surface of the second region 2 is convex or concave, as shown in Fig. 2 (d) O: \ 88 \ 88181.DOC -11-200403548. 'It means that the height is toward the edge portion of the photomask substrate. The shape is lower (convex) or higher (concave) than the surface of the first field. The second area 2 will be described in detail in the second embodiment.

In the long run, based on the obtained results, each of the u mask substrates a to k is classified into each type of the main surface surface shape (step S2). The results show that the types of surface shapes in Table 1 (the first information) can be classified into four types of convex-concave, saddle-type, and fish-plate-type from the above measurement results. In addition, the measurement value (second information) of the flatness of the first area 1 before the reticle stage is clamped is controlled in a range of 0.4 to 0.5 μm. Figures 3 (c) and 3 (1) show the overview of those whose surface shapes are saddle type and fish plate type respectively. [Table 1] Flatness of the photomask substrate before clamping (μιη) Before clamping Flatness of the surface shape (μχη) A 0.5 convex 0.4 B —__ 0.4 convex 0.4 C ___ 0.45 convex 0.4 D ___ 0.5 concave 0.8 E _ 0.5 concave 1.0 F __0.4 saddle 0.9 G __ 0.5 saddle — 0.9 Η ____ 0.4 fish plate ― 0.4 I ___ 0.5 fish plate __ _ 0.4 0.4 J_ _ 0.5 fish plate (spin 0.2 K ___ 0.5 fish plate (spin bee 0.3)

O: \ 88 \ 88181.DOC -12-200403548 Next, on the reticle of the ArF wafer exposure device (manufactured by Nikon Corporation), the above-mentioned 丨 丨 reticle substrates A ~ κ are sequentially held by the real chuck, Then, the flatness of the main surface of each mask substrate after being clamped by the vacuum chuck is measured (step S3). Here, the flatness of the first region 1 (Fig. 2 (a)) of the edge region of the mask substrate removed at a 42 mm angle was measured. Thereafter, as shown in Table 丨, for the u mask substrates a to κ, a correspondence relationship is made between the type of the surface shape and the value of the flatness before and after being clamped by the vacuum chuck (step S4). As can be seen from Table 1, the flatness of the mask substrates A to c with a convex surface shape is the same as or slightly better than that before the clamping, but the mask substrates D to S are concave and saddle surface. The flatness of G deteriorates after clamping. In addition, the mask substrate having a surface shape of a fish plate is one in which the arrangement direction of the mask substrate on the mask stage is arranged in a specific direction with respect to the clamping (the mask substrate Η, I), and The direction in which the specific direction is orthogonal, that is, the direction in which the specific direction is rotated by 90 degrees, is arranged and changed (the mask substrates J, KK) ′ of the clamped substrate are measured, and the flatness is measured. The results are shown in Table 1. It can be seen that the flatness after the vacuum chuck of the fish plate type photomask substrates Η to κ changes depending on the direction in which the photomask substrates are held. In other words, it can be known that the flatness of the fish plate type photomask substrate Η ~ K after the vacuum chuck will change due to the position of the photomask substrate after the vacuum chuck. Specifically, like the photomask substrate Η, if the direction of the photomask substrate on the photomask table is arranged in a specific direction for the chuck, the arc edge of the fish plate type will touch the exposure device. The flatness of the reticle of the reticle stage can hardly be improved, but on the other hand, if it is arranged in the direction rotated by 90 degrees like the reticle substrates J and K, the curved edge of the fish plate type will not touch To exposure

O: \ 88 \ 88181.DOC -13- 200403548 The flatness of the chuck of the mask stage of the optical device will be less than 0.3, and it can be confirmed that the flatness has improved (Table 1). In addition, the reticle substrates A to G with other surface shapes are not shown in the table, as it is understood that even if they are rotated, the flatness cannot be improved. Next, as described above, the types and flatness values of the surface shape before and after being clamped by the vacuum chuck are included in the photomask substrate group including u mask substrates A to κ and 11 mask substrates A to κ Separately prepare a mask substrate having a conforming flatness and a mask substrate having the same kind of surface shape (step S5). Here, a description will be given of a field substrate having the same shape as that of the mask substrate J for the separately prepared mask substrate. In addition, the photomask substrates A to K and the photomask substrates prepared separately are those in which the flatness of the pattern formation area is controlled within a specific specification, and the difference in surface shape is caused by dispersion. Next, a protective film is coated on the separately prepared photomask substrate. After that, the well-known manufacturing process of the exposure mask is continued. That is, the desired pattern is drawn by the protective film of the electronic wire drawing device on the photomask substrate. Next, the protective film is developed to form a protective film pattern. Next, the protective film pattern is used as a photomask, and the mask substrate light-shielding body is processed by a reactive ion etching device to form a light-shielding body pattern. Then, the protective film pattern is peeled off, and the surface of the mask substrate is cleaned to complete the formation of a desired mask pattern &lt; exposure mask (step S6). The desired pattern mentioned above includes a circuit pattern or a pattern for alignment and a pattern for alignment. The exposure mask thus obtained was set in an ArF wafer exposure apparatus, and the flatness of the main surface was measured. It was confirmed that the condition 2 was a good value. ’Then, if you use

O: \ 88 \ 88181.DOC -14- 200403548 Hold the exposure mask with such high flatness on the mask stage of the exposure device, and then illuminate the pattern formed on the above exposure mask by the illumination optical system 'An exposure method for imaging the above pattern on a desired substrate with a projection optical system' will increase the focus tolerance during wafer exposure and significantly increase the productivity of semiconductor products such as DRAM. According to this embodiment, an effective method for manufacturing an exposure mask can be realized, which can solve the problem that the flatness of the main surface of the mask substrate is deteriorated after the mask substrate is clamped on the mask stage of the wafer exposure device. Causes a problem of lowered product productivity. The reticle substrates A to K and the reticle substrates prepared separately as described above may be formed in advance. The means for holding the mask substrate on the mask stage is not limited to a vacuum chuck. (Second Embodiment) In the first embodiment, the surface shape and flatness are obtained only for the i-th region 1 of the main surface of the mask substrate 丨 shown in FIG. 2 (a) (step S1), but in this embodiment The middle system obtains the surface shape and flatness of the two areas of the first area i and the second area 2 surrounding the first area 丨. Here, the first region 1 is a rectangular region having a length of 142 mm with the center of the mask substrate as the center of the region, and the second region 2 is a mouth shape that surrounds the first region and has a length of 150 mm on one side. Area (from the area of the rectangular shape excluding the area of the area of the rectangular shape with the center of the area of the rectangular shape as the center of the area smaller than that of the area). By setting the photomask substrate 丨 on the photomask stage of the exposure device, the empty chuck, the area to be held (the photomask holding area) is almost included in the second area 2. That is, in the second area 2

O: \ 88 \ 88181.DOC -15- 200403548 The power of the mask substrate on the mask stage has almost all played a role. In the extension line of the conventional technology, not only the pattern formation area but also the flatness of the mask holding area is considered to be expanded to the first area 1 to manage the flatness of the area including the mask holding area. However, in the current mask manufacturing technology, it is very difficult to flatten the entire main surface of the mask substrate 丨 the current situation is that the flatness of the main surface of the mask substrate 丨 deteriorates sharply from side to side. In the 丨 th area 丨, although the flatness of the center portion of the photomask substrate 1 is acceptable, the flatness of the edge portion of the photomask substrate 丨 is deteriorated, so the flatness of the entire main surface of the photomask substrate 1 is reduced. Determination results. Therefore, in the present embodiment, as described above, the surface shape and flatness are obtained for the two areas including the third area 1 including the center of the mask and the second area 2 surrounding the first area 1. Using a substrate flatness measuring device (manufactured by NI Corporation), the principal surface flatness and surface shape of a photomask substrate formed by forming a light-shielding body on a quartz substrate having an angle of 152 mm and a thickness of about 6 mm were prepared, and a first area was prepared. 13 pieces of photomask substrates A to M were prepared for the flatness and surface shape of 丨 and the flatness and surface shape of the second region 2 respectively. Next, the 13 mask substrates A to M were sequentially installed in an ArF wafer exposure apparatus (manufactured by Nikon Corporation), and the flatness of the main surface of each mask substrate after being clamped by a vacuum chuck was measured. Next, a correspondence relationship between the types of surface shapes of the 13 mask substrates A to M and the flatness values of the first and second regions after being clamped by a true chuck is made. The results are shown in Table 2. [Table 2] O: \ 88 \ 88181.DOC -16- 200403548

0.35 concave 4 4 — ----__ 0.9

The surface shapes of the i-th and second areas of the 13 mask substrates A to M are classified into four types: convex, concave, saddle, and fish plate. The surface shapes of the first and second areas of the mask substrate A, whose surface shapes are simple convex shapes, are both convex. On the other side, the surface shape of the photomask substrate B like a hat with a cap is convex in the i-th area and concave in the second area.

It is known from Table 2 that the surface shape of the photomask substrate in the second area caused by clamping by the vacuum chuck is deteriorated, and the surface shape of the second area has a concave shape and a saddle shape. In addition, the mask substrate C'd, h, I, l, MO whose surface shape is a fish plate type: \ 88 \ 88181.DOC -17- 200403548 'Due to the arrangement direction of the mask substrate on the mask stage, Show different results. Specifically, if the arrangement direction of the mask substrate on the mask stage is arranged in a specific direction with respect to the chuck, the arc edge of the fish plate type will touch the chuck of the mask stage of the exposure device to reduce the flatness. However, if it is arranged in a direction rotated by 90 degrees, the radian edge of the fish plate type will not touch the chuck of the photomask stage of the exposure device I, and the flatness becomes less than 〇4. The flatness of almost all the mask substrates in the direction (by rotating it by 90 degrees) was improved. In addition, it can also be confirmed that the flatness of the first region after clamping by the vacuum chuck is almost independent of the surface shape of the first region before clamping. That is, the shape change of the main surface of the mask substrate before and after being clamped by the real chuck &lt; is almost determined by the surface shape of the 苐 2 region. ^ In addition, the flatness of the second area is compared with the flatness of the first and second areas. Although the values are exceptionally poor, it can be confirmed that the surface shape of the second area is convex. After being clamped by the vacuum chuck, The surface shape of the first region of the mask substrate hardly changed. According to the above matter, 'the shape of the surface shape of the second area 2 of the i-th area of the plurality of photomask substrates is corresponding to the value of the flatness of the main surface of the photomask substrate before and after being clamped by the vacuum disk. The relationship can be used to manage the inflammatory area of the photomask without having to expand more than necessary. The i-th area &amp; flatness does not need a severe value above the necessary value and can adopt a realistic value. Moreover, considering the surface of the second area The shape can be more surely selected by the vacuum chuck ~ front and rear: a mask substrate with a small change in the flatness of the main surface of the mask substrate. O: \ 88 \ 88I81.DOC -18- 200403548 Secondly, as described above, the types of surface shapes before and after the first region 1 and the second region 2 are clamped by a vacuum chuck beforehand, and the main surface of the photomask substrate is clamped. In the mask substrate group including the 13 mask substrates A to M of the value of the rear flatness, a mask substrate having a flatness conforming to specifications and a surface having the same kind are prepared separately from the 13 mask substrates A to M. Shaped photomask substrate. Here, the separately prepared photomask substrate is prepared to have the same surface shape as the photomask substrate F (the first region is concave and the second region is convex). After the photomask substrate was measured, the flatness of the first region was 0.3 μm or less, and the flatness of the second region was 4 μm or less. Next, a protective film is coated on the photomask substrate. After that, the manufacturing process of the exposure mask of the conventional manufacturing method is continued. That is, a desired pattern is drawn by a protective film on a photomask substrate by an electronic wire drawing device. Next, the protective film is developed to form a protective film pattern. Next, the protective film pattern is used as a photomask to perform a mask substrate light-shielding body etching process using a reactive ion etching device to form a light-shielding body pattern. Then, the protective film pattern is peeled off, and then the surface of the mask substrate is cleaned to complete the exposure mask which forms a desired mask pattern. The desired pattern mentioned above includes a circuit pattern, or a circuit pattern and a pattern for alignment. The thus obtained exposure mask was set in an ArF wafer exposure apparatus and the flatness of the first region was measured. A good flatness of 0.2 µm was confirmed. Then, by holding an exposure mask with such a high flatness on a mask stage of an exposure device, an illumination optical system is used to illuminate the pattern formed on the exposure mask, and the pattern formed by the projection optical system is used. If the image is exposed on a desired substrate (for example, a substrate coated with a protective film), the wafer O: \ 88 \ 88181.DOC -19- 200403548 will increase the focus tolerance during exposure, and greatly increase the DRAM. Productivity of semiconductor products. "In this way, the shape of the bezel is also the same as the first embodiment. It can provide a method for manufacturing an exposure mask, which can effectively solve the problem of holding the mask substrate on the mask surface of the wafer exposure device. The deterioration of the flatness results in a decrease in product productivity. The mask substrates A to M and the mask substrates prepared separately as described above may be formed in advance with alignment marks. The mask substrate is held in the light. The means of the cover is not limited to the vacuum chuck. In addition, according to Table 2, if the surface shape of the second area is convex, the flatness of the first 丨 area after being clamped by the vacuum chuck is good, so The second region &lt; can be used by making a mask substrate or exposure mask with a convex surface shape. The second region has a surface mask as described above, that is, a convex mask substrate or exposure light. The mask 'for example, in the edge region of the quartz substrate or in the inner region (central region) which is more inward than it', the central region portion can be obtained by using a rapid polishing rate. Specifically, a polishing device can be used to make the long It is obtained by grinding the main surface of the quartz substrate. Then, a light-shielding i film is formed on the mask substrate according to a conventional method, and an exposure mask can be obtained by patterning the light-shielding body. The second step is to open the y to have this. The second area of the specific surface shape (convex here) <the exposure mask is clamped on the mask stage of the exposure device, and the illumination light is used to illuminate the pattern formed on the exposure mask. By focusing on the optical system on the desired substrate (such as a substrate coated with a protective film)

O: \ 88 \ 88l8l.DOC -20- 200403548 Exposure of the image of the above pattern to imaging, the focus of the wafer when it was exposed.... I, younger brothers, and other semiconductor products with the same dram, etc. ^ The rate increases exceptionally and greatly increases the thickness of the substrate. Π In order to make the whole of the main surface as flat as possible, the substrate is polished. Therefore, in order to prevent the grindstones from becoming lonely, they did not deliberately control the lengthening of the study period. Therefore, even if the shape of the surface becomes convex or concave, the process of the second household makes its surface exposure area of the younger brother 2 significantly smaller. Degree # Mask substrate in the present embodiment and (third embodiment) In this embodiment, a mask system simulation is performed to obtain a mask corresponding to the surface shape of the main surface of the mask substrate after being clamped by a vacuum disk. Surface shape of the main surface of the substrate. First, the flatness of the pattern formation area (the first area 1} in FIG. 2 (a) 1) was measured by a substrate flatness measuring device (manufactured by Ni Corporation), and a quartz substrate having a thickness of about 6 mm at an angle of 152 was obtained. The surface shape and flatness of the main surface of the mask substrate made of a light-shielding body, and 13 mask substrates A to M each having a different surface shape and flatness were prepared. Next, 'ArF wafer exposure device (made by Nikon Corporation) The structure of the reticle chuck and the flatness of the main surfaces of the above-mentioned 13 reticle substrates A to M were measured by using the finite element method to simulate obtaining the reticle stage of the ArF wafer exposure device by vacuum chucking. The flatness of the major surfaces of the photomask substrates A to M when the disk sequentially holds the 13 photomask substrates A to M. Alternatively, an analytical method may be used instead of the finite element method. Next, to confirm whether the simulation is correct, The 13 photomask substrates A ~ M described above were actually held in sequence by a vacuum chuck on the ArF wafer O: \ 88 \ 88181.DOC -21-200403548. The exposure device was then clamped by a vacuum chuck. The flatness of each photomask substrate after the holding "King's Face". The flatness of the main surface of the optical army substrates A to M to be obtained is measured with the flatness of the main surface of the photomask substrates A to M obtained by measuring with a substrate flatness measuring device actually installed in an ArF wafer exposure device. As shown in Table 3, it can be confirmed that the measurement data of the photomask substrate A to M are almost all of the photomask substrate main surface of the photomask substrate. The flatness obtained is actually flatness (μηι) Surface shape_flatness Qxm) flatness (μηι) A 0.3 convex 0.3 0.3 B 0.3 convex 1.5 1.5 C 0.35 convex__ 0.6 0.6 D 0.35 convex__ 0.3 0.3 E 0.35 convex ^ __ 1.0 1.0 F 0.35 concave_0.5 0.3 G 0.35 concave __0.7 0.8 Η 0.35 concave 0.8 0.8 I 0.35 concave ___ 0.5 0.4 J 0.35 concave ^ __ 0.9 0.9 K 0.5 saddle 1.3 1.0 L 0.5 fish plate ~ _ 0.9 0.9 1 Μ 0.4 fish plate 0.4 0.4 cover substrate However, there is only a difference of 0.1 μm or less. [Table 3] That is, the surface shape type in the aforementioned embodiment is produced by "About the photomask substrate": O: \ 88 \ 88181.DOC In the relationship, the value of the flatness before and after clamping by the vacuum chuck can be replaced with the value obtained by simulation. From this result, the flatness of the pattern formation region ⑽2⑷ of the pattern formation region ⑽2⑷ was measured by a substrate flatness measuring device (manufactured by NI Corporation), and the surface of the photomask substrate "the surface shape was large and connected |" was exposed by the exposure device. "The above-mentioned flatness of the mask central disk structure and the main surface of the obtained mask substrate, and the simulated vacuum chuck sequentially holds the mask substrate to the mask substrate of the exposure device in order The surface shape can predict the surface shape of the main surface of the mask substrate when the mask substrate is actually set in a wafer exposure apparatus. Therefore, it is possible to manage the surface shape and flatness of the main surface of the mask substrate, which is more accurate than the previous two. Fig. 4 is a flowchart showing a method for manufacturing an exposure mask according to the third embodiment of the present invention. In the flowchart of Fig. 4, at step 83, the surface shape of the main surface of the mask substrate when the mask substrate is clamped by the vacuum chuck is obtained by simulation. Then, in step S4, a corresponding relationship is made between the surface shape, the flatness obtained using the substrate flatness measurement device and the flatness obtained using the simulation. The steps S1, S2, S5, and S6 are the same as those shown in the flowchart. Next, in step S5, the following 13 mask substrates A to M are prepared separately from the following mask substrates. The surface shape of the main surface of the substrate is measured by a substrate flatness measuring device, and the mask substrates are sequentially clamped by a vacuum chuck. The shape of the surface of the main surface of the mask substrate when held on the mask stage of the exposure device was determined by simulation to become a flatness of 0.2 μm. After that, the manufacturing of the exposure mask of the conventional manufacturing method is continued at step S6. O: \ 88 \ 88181.DOC -23- 200403548 manufacturing process. That is, a desired pattern is drawn by a protective film on the photomask substrate by an electronic wire tracing device. Next, the protective film is developed to form a protective film and a pattern, and then the protective film pattern is used as a photomask to perform an etching process of the photomask substrate light-shielding body by a reactive ion etching device, and a light-shielding body pattern (photomask pattern) ). After that, the protective film pattern is peeled off, and then the surface of the photomask substrate is cleaned to complete the exposure photomask forming a desired photomask pattern. When the exposure mask was actually set in an ArF wafer exposure device and the surface shape and flatness of the main surface were measured using a substrate flatness measuring device, it was confirmed that a good flatness like the simulated G.2. Was obtained. Then, if an exposure mask with such a high flatness is clamped on the mask stage of the exposure device, and then the pattern formed on the exposure mask is illuminated by the illumination optical system, and the projection optical system is used to An exposure method for imaging the above pattern on a desired substrate (for example, a substrate coated with a protective film) will increase the focus tolerance during wafer exposure, and greatly increase the productivity of semiconductor products such as DRAM. In this way, this embodiment is also the same as the first and second embodiments, and can realize an effective method for manufacturing an exposure mask, which can solve the problem of holding the mask substrate behind the mask stage of the wafer exposure apparatus. The deterioration of the flatness of the main surface of the photomask substrate caused a decrease in product productivity. The reticle substrates A to M and the reticle substrates separately prepared above may be formed in advance with alignment marks. The means for holding the mask substrate on the mask stage is not limited to a vacuum chuck. In each of the above-mentioned embodiments, for example, the wafer exposure apparatus may not be an ArF wafer exposure apparatus. In addition, after the photomask pattern is formed, the flatness of the main surface of the photomask O: \ 88 \ 88181.DOC -24- 200403548 can also be measured, and the measurement data can be used to simulate the time when the photomask substrate is set in the exposure device. Surface shape of the main surface of the photomask substrate. Therefore, since the deformation of the main surface of the mask substrate when the mask pattern is formed is also considered in the results obtained by simulation, the surface shape and flatness of the main surface of the mask substrate can be more accurately determined. management. In addition, the mask is not limited to those for ArF or KRF, and can be applied to, for example, a reflective mask for vacuum ultraviolet exposure, a mask for X-ray exposure, and a mask for electron beam exposure. (Fourth embodiment) In this embodiment, the surface shape of the main surface of the photomask substrate corresponding to the surface shape of the main surface of the photomask substrate after being held by a vacuum chuck is obtained by simulation. Fig. 5 is a flowchart showing a method for manufacturing an exposure mask according to this embodiment. In step s1, the flatness of the pattern formation area (the first area 1 in FIG. 2 (a) 1) is measured by a substrate flatness measuring device (manufactured by NI Corporation) to obtain an angle of 152 mm and a thickness of about 6 mm. The surface shape and flatness of the main surface of the mask substrate formed by forming a light-shielding body on the quartz substrate. Next, in step S2, the photometric chuck structure of the ArF wafer exposure apparatus (manufactured by Nikon Corporation) and the flatness of the above-mentioned measured flatness of the main surface of the single photomask substrate are obtained by using a finite element method by simulation. The flatness of the main surface of the mask substrate when the vacuum chuck sequentially clamps the above-mentioned one mask substrate on the mask stage of the ArF wafer exposure apparatus. It is also possible to use an analytical method instead of the finite element method. Next, in step S3, it is determined that the photomask substrate obtained by the simulation is obtained.

O: \ 88 \ 88181.DOC -25- 200403548 Whether the flatness of the main surface is suitable for its specifications. If it is judged that it is suitable for its specifications, enter the manufacturing process of the exposure mask at step S4. On the other hand, when it is determined in step S3 that the flatness of the photomask substrate is not suitable for the specifications, the photomask film on the quartz substrate of the photomask substrate is peeled off in step S5. Next, the surface of the quartz substrate is polished at step S6. Next, in step S7, a light-shielding film is newly formed on the polished surface of the quartz substrate, and step S1 is repeated to measure the flatness. This embodiment is also the same as the first embodiment, the second embodiment, and the third embodiment. It can realize an effective method for manufacturing an exposure mask, which can solve the problem of holding the mask substrate in the wafer exposure device. After the mask stage, the flatness of the main surface of the photomask substrate is deteriorated, which causes a problem that the productivity of the product is reduced. In addition, the alignment mark of the said mask substrate may be formed beforehand. The means for holding the photomask substrate on the photomask stage is not limited to a vacuum chuck. In addition, for example, the circle exposure apparatus may be an ArF wafer exposure apparatus. In addition, the flatness of the main surface of the mask substrate can be measured again after the mask pattern is formed, and the measurement data can be used to simulate and obtain the surface shape of the main surface of the mask substrate when the mask substrate is set in the exposure device. As a result, the deformation of the main surface of the mask substrate when the mask pattern is formed will also be considered in the results obtained by simulation. Therefore, the surface shape and flatness of the main surface of the mask substrate can be performed with higher accuracy. management. In addition, the photomask is not limited to those for ArF or KRF, and can be applied to, for example, a reflective photomask for vacuum ultraviolet exposure, a photomask for x-ray exposure, and a photomask for electron beam exposure. (Fifth Embodiment) Next, a mask substrate information production method O: \ 88 \ 88181.DOC -26- 200403548 according to a fifth embodiment of the present invention will be described. The method for generating mask substrate information in this embodiment includes: for each of the 11 mask substrates A to K in the table 丨 ·, according to the flow chart of FIG. 丨, for example, steps 骡 S1 to S3 ′ to obtain the surface shape of the main surface and The process of clamping the flatness of the main surface before and after clamping, and the process of producing the correspondence relationship between the types of the photomask substrate and the surface shape and the flatness value as shown in Table 1 for the 11 photomask substrates A to K; and The correspondence is stored in a process such as a computer (PC). The above correspondence stored in a computer (PC) or the like may be displayed. More specifically, for example, a sticker on which a display content is printed may be affixed to a container containing a mask substrate A to κ. By adopting such a display method for the above correspondence, it is easy to manage the light that can solve the problem of lowering the productivity of the product caused by the deterioration of the flatness of the main surface of the photomask substrate after the photomask substrate is held on the photomask stage of the wafer exposure device. Cover substrate. In addition, after step S2 in the flowchart of FIG. 1, information that the surface shape of the main surface is convex is displayed in the information obtained in step S2 of the flowchart of FIG. 1, and the light corresponding thereto is displayed. The mask substrate is mapped, and the correspondence is stored in a computer (PC), etc., and another mask substrate information generation method different from the mask substrate information generation method of this embodiment can be performed. At this time, it is also the same as the method of generating the light army substrate information in this embodiment. For this correspondence, the display of the mask substrate can be similarly easy to manage the mask substrate. Here, eleven photomask substrates A to K in Table 1 are taken as an example to describe the method of generating photomask substrate information, but the same photomask substrate information can be generated for the 13 photomask substrates A to M in Table 2. O: \ 88 \ 88181.DOC -27- 200403548 (sixth embodiment) Fig. 6 is a schematic diagram showing a server system according to a sixth embodiment of the present invention. In the fifth embodiment, a sticker is used as an example for display. However, in this embodiment, it is displayed on a server. Therefore, the method of generating a mask board message in this embodiment can be used for e-commerce (e-mail Business). First, for example, a table such as Table 1, Table 2 or Table 32 is prepared at the production office 11 and the web page containing the table as information is stored in the server 12. Yifuyi12 is a memory means for memorizing the hardware of the above webpage. The server 12 is connected to the majority of customers (customer devices) 13 via the Internet. Dedicated lines can also be used instead of the Internet. Alternatively, a combination of the Internet and dedicated lines may be used. Servo benefits 12 are equipped with: the conventional means of receiving the request from the customer 丨 3 for the above webpage; the conventional means of processing the transmission of the above webpage in a form that can be displayed on the client; The client side of the web page 13 is a conventional means for processing the application information of the substrate mask. This conventional means is composed of, for example, a LAN card, a memory device, server software, a CPU, and the like, and performs desired processing in coordination. When the server 12 receives the request message from the customer 13 for the above-mentioned webpage, it will transmit the information necessary to make the screen 14 shown in FIG. 3 on the display of the customer 13 &lt; On the screen 14, there is displayed a form 15 having the contents as shown in Table 丨, selecting the desired substrate mask and confirming it is indeed the box 16, and the main purpose of purchasing the substrate mask confirmed in the confirmation box The decision image symbol (icon) 17 transmitted to the server 12 is decided. In FIG. 6, for the f 1 list, the member ′ shows a form 15 having the content shown in Table 1, but it can also be used.

O: \ 88 \ 88181.DOC -28- 200403548 A form with the contents shown in Table 2 or the contents shown in Table 3. According to this embodiment, since a photomask substrate having a high flatness behind a photomask holding the photomask substrate on a wafer exposure device can be purchased, a server can be realized, which can effectively solve the problem of holding the photomask substrate on the wafer exposure device. The problem of lowering the productivity of the product caused by the flatness of the main surface of the photomask substrate after the photomask stage has been described above. Embodiments of the present invention have been described, but the present invention is not limited to such embodiments. For example, in the above embodiment, a convex shape &lt; mask substrate can obtain good results, but there are also cases where a concave shape mask substrate can be obtained because of the exposure device provided with the mask substrate. That is, because the flatness of the reticle substrate after the vacuum chuck is greatly affected by the shape of the reticle chuck table and the reticle chuck surface, the reticle should be selected according to the reticle chuck table used The shape of the main face will change. In addition, in the above-mentioned embodiments, the case of a <mask substrate for an ArF wafer exposure device was explained, but it can also be used for other mask substrates, such as a mask substrate for a KrF wafer exposure device and vacuum ultraviolet light. Reflective photomask substrates for exposure, optical military substrates for X-ray exposure, photomask substrates for electron beam exposure, and the like. The above embodiments include inventions in various stages, which can be extracted from appropriate combinations of unrevealed constituent elements, and various types can be extracted. For example, even if all the constituent elements shown in the embodiments are deleted, When it is possible to solve the problem described in the column of the problem to be solved by the invention, each of the constitutional requirements can be extracted as the invention. Others may be used without departing from the scope of the present invention.

O: \ 88 \ 8818l.DOC -29- 200403548 undergoes various deformations. [Effects of the Invention] As described above, according to the present invention, an effective method for manufacturing an exposure mask, a method for generating mask substrate information, a method for manufacturing a semiconductor device, a mask substrate, an exposure mask, and a server can be realized. The invention can effectively solve the problem that the productivity of the product is reduced due to the deterioration of the flatness of the main surface of the photomask substrate after the photomask substrate is clamped on the photomask stage of the wafer exposure device. [Brief description of the drawings] [Fig. 1] Fig. 1 is a flowchart showing a manufacturing method of an exposure mask according to a first embodiment of the present invention. [Fig. 2] Fig. 2 (a) is a plan view of the main surface of the photomask substrate 1, which is a diagram illustrating the first and second regions; Fig. 2 (b) is a drawing illustrating the first region 1 of the photomask substrate FIG. 2 is a cross-sectional view of the first area 1; FIG. 2 (c) is a diagram illustrating the first area 1 of the photomask substrate, that is, other cross-sectional views of the first area; FIG. 2 (d) is a In order to explain the pattern of the second region 2 of the photomask substrate, that is, a cross-sectional view of the second region 2. [Fig. 3] Fig. 3 (a) is a diagram illustrating the first region 1 of the mask substrate, that is, a schematic perspective view of the first region 1; Fig. 3 (b) is a diagram illustrating the first region of the mask substrate Fig. 3 is a schematic perspective view of the other area of the first area 1; Fig. 3 (0 is a diagram for explaining the first area 1 of the photomask substrate, that is, another outline perspective view of the first area 1; Fig. 3 (d) It is a diagram illustrating the 丨 region 丨 of the photomask substrate, that is, other schematic perspective views of the 1st region 1. O: \ 88 \ 88181.DOC -30- 200403548 [Fig. 4] Fig. 4 shows the present invention. [Figure 5] Figure 5 is a flowchart showing a method for manufacturing an exposure mask according to a fourth embodiment of the present invention. [Figure 6] Figure 6 is a flowchart illustrating a method for manufacturing an exposure mask according to a fourth embodiment of the present invention. The server mode diagram related to the sixth embodiment of the present invention is shown. [Description of Symbols of the Drawings] 1 ...... 1st area 2 ...... 2nd area 11... .. .. server 13.... Customer 14.... Screen 15.... Form 16 — confirmation box 17.... Image symbol O: \ 88 \ 88181.DOC -31-

Claims (1)

200403548 Patent application park: 1 · A server with: means for performing a process of memorizing a web page containing information showing correspondences, the correspondences showing the shape of the main surface surface of each photomask substrate and each photomask substrate Correspondence between the first information and the plurality of photomask substrates and the second information displayed on the flatness of the aforementioned main surface before and after clamping of the photomask stage of each photomask substrate exposure device; Means for processing requested information; means for transmitting the aforementioned web page in a displayable form on the customer's side; means for receiving the aforementioned mask substrate application information from the aforementioned employee who sent the aforementioned web page. O: \ 88 \ 88181.DOC