TW200523380A - Evaporation coating apparatus - Google Patents
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- TW200523380A TW200523380A TW93100292A TW93100292A TW200523380A TW 200523380 A TW200523380 A TW 200523380A TW 93100292 A TW93100292 A TW 93100292A TW 93100292 A TW93100292 A TW 93100292A TW 200523380 A TW200523380 A TW 200523380A
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200523380200523380
【發明所屬之技術領域】 本發明係關於一種蒸鍍裝置,特別係為一種將用以噴 出不同蒸鑛靶材氣體之喷嘴以同轴或是交錯型式玄 鍍裝置。 & 【先前技術】 隨著有機電致發光技術的成熟、進行產品量產的廠商 越來越多,有機電致發光顯示器(〇rganic electroluminescence display; 〇ELD)進軍平面顯示器已 成為必然的趨勢。 、 站在生產者的角度而言,有機電致發光顯示器當缺必 須追隨液晶顯示器的腳步,將生產基板的尺 ^, 以得到較經濟的生產成本。 ^ 然而,當基板尺寸越來越 一個相當大的挑戰,如何在基 的高品質有機薄膜一直是有機 所面臨的最大問題。 大時’其鍍膜的均勻性就是 本上製作大面積且厚度均勻 電致發光元件在當前量產上 從僂ί: 面積量產的需纟,大面積的薄膜蒸鍍早期是 聰源為基礎來進行改良,而利用點蒸發源所 ^伸=來的改良方法有:改變點蒸發源氣體容器開口的形 等。《加點蒸發源的數目以及調整點蒸發源的排列方式… 在小面積及少量生產時, <或許可以提供相當均勻程度 方式在大面積化量產時卻仍有 單點或多點蒸發源的蒸鍍方 與品質的薄膜,但是,這種 其限制,例如:薄膜厚度不[Technical field to which the invention belongs] The present invention relates to a vapor deposition device, and more particularly, to a coaxial or staggered type black plating device in which nozzles for ejecting different vapor target gas are used. & [Previous technology] With the maturity of organic electroluminescence technology and more and more manufacturers producing products, it is an inevitable trend for organic electroluminescence displays (〇ELD) to enter flat display. From the perspective of the manufacturer, when organic electroluminescence displays are in short supply, they must follow the steps of liquid crystal displays, and the size of the production substrates must be reduced to obtain more economical production costs. ^ However, as substrate size is becoming a considerable challenge, how to make high-quality organic thin films on substrates has always been the biggest problem facing organics. The uniformity of the coating of Da Shi 'is that the large-area and uniform-thickness electroluminescent elements are originally produced in current mass production. From the area of mass production requirements, large-area thin-film evaporation was based on Congyuan in the early days. For improvement, the improvement methods using the point evaporation source include changing the shape of the opening of the point evaporation source gas container. "Number of Adding Evaporation Sources and Adjusting the Arrangement of Point Evaporation Sources ... In Small Areas and Small Production Volumes, < May Provide a Quite Uniformity Mode in Large-Area Mass Production with Single or Multiple Evaporation Sources Still Available Vapor deposition and quality of the film, but this kind of limitations, such as: film thickness is not
200523380 五、發明說明(2) 均、靶材利用率低(材料利用率僅 因此,為因應大面積化量 0 °) ·專問題。 蒸發源的形狀從點基發程的要求,薄膜沉積之 發源目前普遍採用的;蒸發源的型式,而線蒸 線蒸發源的優點是採用掃 面積式的生產,雖然當前的線基發當適合大 積時已可提供不錯的膜厚均勻度。,、早/儿積源材料沉 仁疋,當利用線蒸發源進行多個、、u u 例如··將一捷雜材料携雜入Y/體·;積/材料之共蒸錢 積材料源(攙雜材料與載體材 / 由於各沉 士,而”積材料在到達基:表):;以一同 :,即會產生攙雜材料無法有效 日:間差’因 ::?形,而造成薄膜厚度與材料分佈二::::料 現=題,致使元件的品質與發光效率:下T上就會出 ,一由於在進行攙雜的過程中,我 :均句地分佈在載體材料中,以達 :::料能夠 :匕’如何改善不同材料在共蒸鍍時 ^效率。因 將是亟待克服的技術重點。之均句性的問題, 【發明内容】 馨於以上習知技術的問題,本發明 種讀裝置’ &蒸鍍裝置係將對應於 姑在於提供- 積材料源)之各個噴嘴安排在同冋=材(即沉 方式排列,如此-來,當多個不同蒸心:;:;:: 第6頁 200523380 五、發明說明(3) 共蒸,製程時,各個蒸錢萃巴材加 以同時到達基板表面,而I A 士…、俊々座生的乳體刀子可 可製作出大面積且厚度均。士生時間差的問題’因此即 &太恭B日> —I ^句的高品質有機薄膜。 而本發明之瘵鍍裝置具有下列優點. 1 ·由於此蒸鍍裝置係利用一 + 式進行蒸鍍,因此,在財型療电源模組以掃描式的方 與整個線型蒸發源模組製程時’基板載座 以將整個腔體進行抽真空 :/乂,、、、近,相對而言,用 發源的真空系統那麼大。一二糸統就不需像習知之點蒸200523380 V. Description of the invention (2) Uniformity, low utilization rate of target material (material utilization rate is therefore only 0 ° for large area) · Special problem. The shape of the evaporation source is based on the requirements of the point-based process. The source of thin-film deposition is currently commonly used; the type of evaporation source, and the advantage of the line evaporation line evaporation source is the use of sweep area production, although the current line-based development is suitable for It can provide good film thickness uniformity in large accumulation. , Early / Earth accumulation source material Shen Renxun, when using a linear evaporation source to carry out multiple, uu, for example, ... to bring a Czech miscellaneous material into Y / body ... Hybrid materials and carrier materials / due to the Shen Shi, and "accumulation materials are on the arrival base: table) :; together: will produce hybrid materials can not be effective day: time difference 'cause ::? Shape, resulting in film thickness and Material distribution 2 :::: material present = problem, resulting in component quality and luminous efficiency: will appear on the next T, one because in the process of doping, I: evenly distributed in the carrier material to achieve: :: Material can: How to improve the efficiency of different materials in co-evaporation. Because it will be the technical focus to be overcome urgently. The problem of uniformity, [Summary of the Invention] The problems of the conventional technology above, the present invention The "reading device" & vapor deposition device arranges the nozzles corresponding to the source of the accumulated material provided in the same material (that is, arranged in a sinking manner, so-come, when multiple different evaporation centers:;:; :: Page 6 200523380 V. Description of the invention (3) Co-steaming The steamed bacon material reaches the surface of the substrate at the same time, and the milk knife cocoa made by IA, ..., and Jonzao can make a large area and uniform thickness. The problem of the difference in time between students and students' is therefore & Tai Gong B Day > — I ^ sentence of high-quality organic thin film. The hafnium plating device of the present invention has the following advantages. 1 · Since this evaporation device uses one + type for evaporation, the scanning type power supply module uses a scanning method. When the entire linear evaporation source module is manufactured, the substrate carrier is used to evacuate the entire cavity: / 乂 ,,,,, and near. In contrast, the source vacuum system is so large. One or two systems do not need to be like Know the point of steaming
Hr月f ί鍍裝置係利用線蒸發源進行薄膜基r的 “太:此,相較於習知以點 的 上。 、罕材的材料利用率可提升1 〇倍以 為使對本發明ήί]1 了解,茲配人R ϋ 、、構u特徵及其功能有進一步的 ^ 鉍配合圖不砰細說明如下: 【實施方式】 ^ 立闽σ月參考「第1圖」所示,係、為本發明第一無雜制夕-思圖,此蒸鍍裝置之工作原是 男也例之不 蒸鍍之材加敎基發以:二在一真空環境中將欲進行 基板之表面以凝聚為一薄膜。 一…孔附者在一 此条鑛裝置包含有兩個主 型蒸發源模組20。 要的邛为:基板載座10與線 此基板載座10是用以承載欲進 板3 0可為矽曰圓、入 τ…、锻之基板30,此基 巧夕曰曰圓、金屬基板、有機材料或是無機材料,而The coating device is based on the use of a linear evaporation source to perform thin film substrates. "Too: Compared with the conventional point, the material utilization rate of rare materials can be increased by 10 times in order to make the present invention more expensive." 1 It is understood that there are further features and functions of R 、, u, and U in ^. The bismuth coordination diagram is not explained in detail below. [Embodiment] ^ Li Min σ refers to "Figure 1", which is based on Invented the first non-hybrid system-thinking map, the work of this evaporation device was originally a male non-evaporation material plus a base material: two in a vacuum environment to the surface of the substrate to be aggregated into one film. One ... Hole Attachment One This mining unit contains two main evaporation source modules 20. The important points are: the substrate carrier 10 and the wire. The substrate carrier 10 is used to carry the substrate 30, which can be silicon, round, τ ..., forged substrate 30. This base is a circular, metal substrate. , Organic or inorganic materials, and
第7頁 200523380 五、發明說明(4) 一般進打瘵鍍製程時,通常是使用玻璃基板進行蒸鍍。 此基板載座1 (K係連接至一恆溫控制系統7〇,^、θ 制系統70係用以控制基板3〇之溫度, 控 中基板30溫度之穩定。 又以保持屬膜条鍍過程 此線型蒸發源模組20是對應於基板載座丨〇之位置# 置,以利用掃描式沉積的方式(類似 。又 掃描文件之形式)於基板30上形成所需之先機模組 2 型蒸發源模組2〇與欲進行蒸鍍之 I:; '此光罩4〇上具有預先設計好的特定圖开;: 使人進盯瘵鍍之材料沉積於基板3〇上之特定區域。 的之近似於欲進行蒸鍍之基板 因熱膨脹係數之不療鑛的過程中因基板30與光罩4〇 ,, 不同而產生圖形漂移的問題。 第二;^ :二:f組2◦主要係由-第-喷嘴單元21及一 排列的成。而第一喷嘴單元21是由數個平行 蒸鍍革巴材的材行薄膜沉積之第一種 3 0上以進行沉j I疋精由母一個第一喷頭2 11噴出至基板 221所第組—成嘴嘴此單笛元22J樣是由數個平行排列的第二喷頭 之内,且二弟—喷嘴單元22係套設於第一噴嘴單元21 同軸之形式机:Ϊ直線型式排列,使各個第—噴頭211以 沉積之蒸鍍萆:材的5個第二:頭22 1之外圍,而第二種欲 至基板30上以谁二、_料即是藉由每一個第二噴頭221喷出 行/儿積,如此一來,第一喷嘴單元2 1與第Page 7 200523380 V. Description of the invention (4) Generally, in the process of doping, a glass substrate is usually used for vapor deposition. This substrate carrier 1 (K is connected to a constant temperature control system 70, ^, θ system 70 is used to control the temperature of the substrate 30, and to control the stability of the temperature of the substrate 30. In order to maintain the film strip plating process, The linear evaporation source module 20 is located at a position # corresponding to the substrate holder 丨 〇, and uses a scanning deposition method (similar to the form of a scanning file) to form the required advanced module type 2 evaporation on the substrate 30. Source module 20 and I to be vapor-deposited: 'This photomask 40 has a pre-designed specific pattern :: It allows people to deposit the plated material on a specific area on the substrate 30. This is similar to the problem of pattern drift due to the difference between the substrate 30 and the photomask 40 in the process of the substrate to be evaporated due to the thermal expansion coefficient. Second: ^: two: f group 2 ◦ Mainly The first nozzle unit 21 and an array are formed. The first nozzle unit 21 is a first type 30 deposited by a plurality of parallel-evaporated leather and film materials to perform the deposition. A first nozzle 2 11 is ejected to the second group of the substrate 221-into a mouth. This single flute element 22J is composed of several parallel rows. Within the second nozzle, and the second-nozzle unit 22 is set on the first nozzle unit 21, the coaxial form machine: Ϊ is arranged in a linear pattern, so that each of the first-nozzle 211 is deposited by deposition: 的 5 of the material The second: the periphery of the head 22 1, and the second type is to be printed on the substrate 30 by the second nozzle 221, so that the first nozzle unit 2 1st and
第8頁 200523380 五、發明說明(5) 二喷f單元22内不同蒸心材之材料即可同時沉積於基板 30之表面,以達到共蒸鍍時薄膜厚度與材料分佈之均句性 的要求,以製作出大面積且厚度均勻的高品質薄膜。 而在鄰近於第一喷嘴單元21與第二喷嘴單元22之第一 嗔頭211與第二喷頭221之處分別m膜厚計110、 111,用以谓測不同蒸鍍靶材所沉積出來的薄膜厚戶,以 隨時對沉積速率進行訊號的饋 、子又 膜沉積之厚度。. 的口饋技制,進而精確地控制薄 請f考「第2-A圖」及「第2_β圖」所示 明::實施例之第一噴嘴單元21與第二喷: 與第二喷嘴單元22中其中= 係為弟-喷嘴單元21 組合後之細部侧視圖(此「,、 、^211及第二喷頭221 圖」之方向相垂直) 43圖」之侧視方向恰與「第1 第一喷嘴單元2 1與第二喑 锅50、51,而掛鋼5〇、51:=备早兀22係为別連接至一坩 …與第二種蒸二;;係第-種蒸鑛把材 -種蒸鍍靶材501與第二種;猎=J掛鍋5。、51使第 種不同欲沉積之材料藉由每才一5 子/發,使兩 221喷出至基板3〇上, 個第贺頭211與第二喷頭 此掛細5Γ可二進/薄膜之共沉積。 生之熱能加熱第一種蒗參Ζ阻式、電感式或是電子束所產 而各坩鍋50、51係分;::材5〇1與第二種蒸鍍靶材511。 溫控制器9 0、9 1,、以分別批至二加熱控制器8 0、8 1及一恆 刀J控制第一種蒸錢靶材5 〇丄與第二 200523380Page 8 200523380 V. Description of the invention (5) The materials of different steam cores in the two-spray f unit 22 can be deposited on the surface of the substrate 30 at the same time, in order to achieve the uniformity of film thickness and material distribution during co-evaporation. In order to produce a high-quality film with a large area and a uniform thickness. Adjacent to the first nozzle head 211 and the second nozzle head 221 of the first nozzle unit 21 and the second nozzle unit 22, the film thickness gauges 110 and 111 are respectively used to measure the deposition of different evaporation targets. The thickness of the thick film, at any time to feed the signal to the deposition rate, the thickness of the film deposition. . Oral feeding technology, so as to accurately control the thin film, please refer to "Figure 2-A" and "Figure 2_β" as shown :: the first nozzle unit 21 and the second spray of the embodiment: and the second nozzle In unit 22, = is a detailed side view of the assembly of the brother-nozzle unit 21 (the directions of this ",,, ^ 211, and the second nozzle 221" are perpendicular) The direction of the side view of the "43" is exactly the same as the "No. 1 The first nozzle unit 21 and the second shabu-shabu 50, 51, and the hanging steel 50, 51: = Beizao Wu 22 is connected to a crucible ... and the second steamed; Mining material-a kind of evaporation target 501 and the second type; hunting = J hanging pot 5., 51 to make the first different material to be deposited with 5 seeds per round, to spray two 221 to the substrate 3 Above, the 5th He head 211 and the second head 5 Γ can be binary / co-deposited. The heat generated by the heating heats the first type of ginseng Z resistive, inductive or electron beam and each crucible The pots 50 and 51 are divided into :: material 501 and the second evaporation target 511. Temperature controllers 90, 91, and batches to two heating controllers 80, 81, and one constant knife, respectively. J Controls the First Steamed Money Target 5 〇 丄 and the Second 200523 380
維持蒸鑛過程中第一種 之溫度固定。 種蒸鑛革巴材5 1 1之加熱狀況及用以 蒸鍍靶材501與第二種蒸鍍靶材511 而各個第一喷頭211與坩鍋50之間分別設置有一 管60,以分別制鋼50内第—種蒸錢加哉後所產 生之氣體分子傳輪至各第一喷頭211。同樣地 二喷頭221與掛鋼51之間分別設置有_連接管61,= 將掛鍋51内之第二種蒸鑛乾材511加熱後所產 j 子傳輸至各第二噴頭221。 篮刀 而在各個第一喷頭211與各個第二喷頭221底部之處分 別設置有一喷頭溫度控制器12〇、121及恆溫裝置 ^與絕熱裝置(圖中未示)1以控制各第一喷頭2ιι愈各 =一喷頭221在瘵鍍過程之溫度,以保持其溫度之穩定 而在各個第一噴頭211與各個第二喷頭221 =置有-絕熱裂置㈣,由於第—種蒸鍍革巴㈣二 種条鍍革巴材511其汽化時之穩定溫度可能相差達丄〇〇以 上,因此,需藉由此絕熱裝置1〇〇以防止二 交換的情形。 $ j座生熱月匕 而此第一實施例之蒸鍍裝 材之蒸鍍,而同樣係可適用於 其不同之處僅在於將多個不同 各種對應於不同靶材之喷頭呈 嘴單元内不同蒸鍍靶材之材料 即可。 置不僅只適用於兩種不同革巴 兩種以上不同靶材之蒸鍍, 的喷嘴單元套設在一起,使 同轴之形式排列,以使各喷 可同時沉積於基板3〇之表面 200523380 、發明說明(7) 而當使用兩種以上不同靶材進行薄膜之蒸鍍時,則需 根據不同的靶材分別設置相對應之膜厚計,以隨時偵測不 同乾材所沉積出來的薄膜厚度。Keep the temperature of the first type fixed during the steaming process. The heating status of the steamed leather 5 and 1 and the evaporation target 501 and the second evaporation target 511 are provided. A tube 60 is provided between each of the first spray heads 211 and the crucible 50, respectively. The first type of gas molecules generated in the steel making 50 after steaming and steaming is transferred to each first spray head 211. Similarly, _ connecting pipes 61 are provided between the two spray heads 221 and the hanging steel 51 respectively, and the j produced by heating the second type of steamed dry material 511 in the hanging pan 51 is transmitted to each second spray head 221. A basket temperature controller is provided at the bottom of each of the first nozzles 211 and the second nozzles 221 with a nozzle temperature controller 120, 121, a thermostat ^ and a thermal insulation device (not shown) 1 to control each One nozzle 2 ιι is equal to the temperature of one nozzle 221 during the plating process to keep its temperature stable. Each first nozzle 211 and each second nozzle 221 are provided with-adiabatic cracking, because the first- The evaporation temperature of the two kinds of stripe leather 511 of two kinds of vapor-deposited leather and barn may differ by more than 100, so it is necessary to use a thermal insulation device 100 to prevent the second exchange. $ j The heat generating moon is the same as the vapor deposition material of the first embodiment, which is also applicable to the difference. The only difference is that a plurality of different nozzles corresponding to different targets are presented as nozzle units. The materials of different evaporation targets can be used. The nozzle unit is not only suitable for the evaporation of two different targets with two or more different targets. The nozzle units are set together so that they are arranged in a coaxial manner so that each spray can be deposited on the surface of the substrate 30 at the same time. 200523380 , Explanation of the invention (7) When using two or more different target materials for film deposition, it is necessary to set corresponding film thickness meters according to different target materials to detect the thickness of the film deposited by different dry materials at any time. .
>請參考「第4-A圖」及「第4-B圖」所示,分別為本發 明第二實施例之第一喷嘴單元21與第二喷嘴單元22分解及 組合後之上視圖;而「第5圖」所示,係為第一喷嘴單元2 1 與第二喷嘴單元22組合後之側視圖;而「第6-A圖」及「第 6圖」所示,係為第一喷嘴單元2 1與第二喷嘴單元22中 其中一組第一喷頭2 11及第二喷頭2 2 1分解及組合後之細部 ,,圖(此「第6-Α圖」及「第6-Β圖」之側視方向恰與 「第5圖」之方向相垂直)。 、 此第二實施例之結構大致上是與第一實施例雷同,不 過’其第一喷嘴單元21與第二噴嘴單元22係以並列的方式 連結在一起’如此,即可使各第一喷頭2 11與各第二喷頭 2_2 1呈直線型之交錯並列方式排列,此種第一喷頭2 11與第 —喷頭221之排列方式同樣係為使各坩鍋5〇、51内之第一 種蒸鑛乾材5 0 1與第二種蒸鍍靶材5 11可同時沉積至基板3 〇 之表面 °> Please refer to "Figure 4-A" and "Figure 4-B", which are respectively top views of the first nozzle unit 21 and the second nozzle unit 22 of the second embodiment of the present invention after being disassembled and combined; The "Figure 5" is a side view of the combination of the first nozzle unit 2 1 and the second nozzle unit 22; and the "Figure 6-A" and "Figure 6" show the first The detail of the nozzle unit 21 and the second nozzle unit 22 after disassembling and combining a group of the first nozzle 2 11 and the second nozzle 2 2 1 (Figure "This" 6-A "and" No. 6 -The side view of "B picture" is perpendicular to the direction of "5 picture"). The structure of this second embodiment is roughly the same as that of the first embodiment, but 'the first nozzle unit 21 and the second nozzle unit 22 are connected side by side' so that each first spray unit The head 2 11 and each of the second spray heads 2_2 1 are arranged in a linear staggered parallel manner. The arrangement of the first spray head 2 11 and the first spray head 221 is the same as that of the crucibles 50 and 51. The first type of vaporized dry material 501 and the second type of vaporized target material 5 11 can be simultaneously deposited on the surface of the substrate 3 °
同樣地’在各個第一喷頭2 11與各個第二喷頭221接觸 之處分別設置有一絕熱裝置100,由於第一種蒸鍍靶材501 與第二種蒸鑛靶材511其汽化時之穩定溫度可能相差達 100 °C以上’因此,需藉由此絕熱裝置100以防止二者間產 生熱能交換的情形。 請參考「第7-A圖」及「第7-B圖」所示,分別為本發Similarly, a thermal insulation device 100 is provided at each of the first nozzles 21 and the second nozzles 221. Since the first evaporation target 501 and the second evaporation target 511 are vaporized, The stable temperature may differ by more than 100 ° C. Therefore, the thermal insulation device 100 is needed to prevent the occurrence of thermal energy exchange between the two. Please refer to "Figure 7-A" and "Figure 7-B"
第11頁 200523380 發明說明(8) — 明第二實施例之多個(3個) —^ ^ ^ ^ ^ 上視圖^「第8-A圖」及「第=早兀分解及組合後之 嘴單元21、第二噴嘴單;2218第ΒΛ」所示,係為第-嘴 第-喷頭2U、第二,頭221。:贺嘴單元23中其中1 之細部御Η見圖(此「第8Α圖、ί 口頭231 *解及組合後 第7-Β圖」之方向相垂直)。 將各個不同的喷嘴單元以交上/二?乾材之蒸鑛時,可 中僅以三個不同材料之配置,而在此圖 其第一喷嘴單元21、第;單。 23係以並列的方式連結在一起嗔鳥早兀22與第三喷嘴單元 而此第三喷嘴單元23之_ 二噴嘴單元22雷同,第三喷嘴即疋1 ^ 一喷嘴單元21及第 而坩鍋52内係用以放置第三;:23係連接至-坩鍋52, 掛鎮52使第三種蒸錢乾才彻材f 1你並藉由加熱 料藉由每-個第三噴頭231噴出;=丄使欲沉積之材 之共沉積。 ®至基板3〇上,以進行薄膜 電感式或是電子束所產生之 而掛鍋52係連接至一加熱 以控制第三種蒸鍍靶材5 2 1 過程中蒸鍍靶材之溫度固 此坩鍋52可採用電阻式、 熱能加熱第三種蒸鍍靶材521。Page 11 200523380 Description of the invention (8) — Multiple (3) of the second embodiment — ^ ^ ^ ^ ^ Top view ^ "Figure 8-A" and "No. = early split and combined mouth" Unit 21, second nozzle list; 2218, BΛ ", is -U nozzle-nozzle 2U, second, head 221. : See the detail of the one in Hezui Unit 23 for details (see Figure 8A, verbal 231 * after solution and combination, Figure 7-B, the directions are perpendicular). To hand in the different nozzle units? For the drying of dry materials, only three different materials can be used. In this figure, the first nozzle unit 21 and the first; The 23 series is connected in a side-by-side manner. The bird 22 and the third nozzle unit are the same. The third nozzle unit 23 is the same as the second nozzle unit 22, and the third nozzle is the first nozzle unit 21 and the first crucible. The inner part 52 is used to place the third; the 23 part is connected to the crucible 52, and the hanging part 52 makes the third kind of steamed money dry to complete the material f 1 and you are sprayed by the third nozzle 231 by heating the material ; = 丄 Co-deposition of the material to be deposited. ® onto the substrate 30 for thin film inductive or electron beam generation and the hanging pan 52 is connected to a heater to control the temperature of the third evaporation target 5 2 1 The crucible 52 may use a resistance type and thermal energy to heat the third evaporation target 521.
控制器82及一恆溫控制器92, 之加熱狀況,及用以維持蒗鍍 定。 …、 向各個第三喷頭231與 R 9 〜啊0 Ζ之間設置有一#社拉 b2,以將坩鍋52内第:鍤芡枯* 令 連接官 弟—種瘵鍍靶材521加熱後所產生之氣The heating conditions of the controller 82 and a constant temperature controller 92 are used to maintain the thorium plating. …, A # 社 拉 b2 is provided between each of the third spray heads 231 and R 9 ~ 0 0, so as to heat up the crucible 52: let the connection official—the seeding target 521 after heating Generated gas
200523380 五、發明說明(9) -- 體分子傳輸至各第三喷頭231。 而在各個第三喷頭2 3 1底部之處分別設置有一 度控制器122及十互溫裝置(圖中未示)與絕熱裝置(圖中^ 不),用以控制各第三喷頭2 3 1在墓餹说如>由 %观過程之溫度,以保持 其溫度之穩定性。200523380 V. Description of the invention (9)-The body molecules are transmitted to each third head 231. And at the bottom of each third nozzle 2 31, a degree controller 122 and a ten-temperature device (not shown in the figure) and a thermal insulation device (not shown in the figure) are provided to control each third nozzle 2 3 1 said in the tomb 如 to observe the temperature of the process from% to maintain its temperature stability.
而在各個第-喷頭m、各個第二噴頭221與各個第三 喷頭231接觸之處分別設置有一絕熱骏置1〇〇,由於第一種 蒸鍍靶材501、第二種蒸鍍靶材511與第三種蒸鍍靶材521 其汽化時之穩定溫度可能相差達100t以上,因此,需藉 由此絕熱裝置100以防止三者間產生熱能交換的情形。曰 如此,即可使各第一喷頭2Π、各第二喷頭221與各第 二喷頭2 31呈直線型之父錯並列方式排列,這種第一喷頭 211、第二喷頭221與第三喷頭231之排列方式同樣係為使 各坩鍋50、51、5 2+内之第一種蒸鍍靶材5〇1、第二種蒸鍍 靶材51 1與第三種蒸鍍靶材5 2 1可同時沉積至基板3 〇之表 面。In addition, each of the first nozzles m, each of the second nozzles 221, and the third nozzles 231 is respectively provided with an adiabatic nozzle 100, because the first type of evaporation target 501 and the second type of evaporation target The stable temperature of the material 511 and the third evaporation target 521 during vaporization may differ by more than 100t. Therefore, the thermal insulation device 100 is required to prevent the occurrence of thermal energy exchange between the three. That is to say, each first head 2II, each second head 221, and each second head 2 31 can be aligned in a staggered manner, such first head 211, second head 221 The arrangement of the third nozzle 231 is the same as that in the crucibles 50, 51, and 5 2+, the first evaporation target 501, the second evaporation target 511, and the third evaporation target The plating target 5 2 1 can be simultaneously deposited on the surface of the substrate 30.
請參考「第9-A圖」及「第9-β圖」所示,分別為本發 明第一實施例與第二實施例並用時,多個(3個)不同喷嘴 單元分解及组合後之上視圖;而「第1〇 — Α圖」及「第1〇一β 圖」所示,係為第一噴嘴單元21、第二喷嘴單元22與第三 喷嘴單元23中其中一組第一喷頭211、第二喷頭221與第三 喷頭2 3 1分解及組合後之細部側視圖(此「第1 〇 -A圖」及 「第10-B圖」之側視方向恰與「第9-A圖」及「第9-B」之 方向相垂直)。 θPlease refer to "Figure 9-A" and "Figure 9-β", respectively, when the first embodiment and the second embodiment of the present invention are used in combination, a plurality of (3) different nozzle units are disassembled and combined. Top view; and as shown in "Figure 10-A" and "Figure 10-β", they are a group of the first nozzle unit 21, the second nozzle unit 22, and the third nozzle unit 23. The detailed side view of the head 211, the second head 221, and the third head 2 31 after being disassembled and combined (the side views of the "Figures 10-A" and "Figure 10-B" are exactly the same as those of the "No. 9-A "and" 9-B "are perpendicular). θ
第13頁 200523380 五、發明說明(10) 當使用者欲進行2種以上不同蒸鍍靶材之蒸鍍時,除 了可以將各個不同的喷嘴單元以交錯並列的方式配置之 外,亦可先將第,喷嘴單元21與第二喷嘴單元22套設在一 起,使各種對應於不同革巴材之第一噴頭211與第二喷頭221 呈同軸之形式排列。 之後,第一喷嘴單元21與第二喷嘴單元22再以並列的 =式1第三喷嘴單元23連結在一起,同樣可使各掛鍋5〇、 二籀T Γ ί 一種瘵鍍靶材5 〇 1、第二種蒸鍍靶材5 11與第 二種靶材521可同時沉積至基板30之表面。 式配;Ϊ不5::同的喷嘴單元以同軸合併交錯並列的方 實際之需求將接二種不同材料之蒸鍍,使用者可依據其 中。 一種以上不同的喷嘴單元設置於蒸鍍裝置 以上所述者, 、 非用來限定本發日’僅為本發明其中的較佳實施例而已,並 圍所作的均等^明的實施範圍;即凡依本發明申請專利範 文化與修飾,皆為本發明專利範圍所涵蓋。Page 13 200523380 V. Description of the invention (10) When the user wants to perform evaporation of more than two different evaporation targets, in addition to arranging the different nozzle units in a staggered manner, it is also possible to first First, the nozzle unit 21 and the second nozzle unit 22 are nested together so that the first nozzle 211 and the second nozzle 221 corresponding to different leather materials are arranged in a coaxial manner. After that, the first nozzle unit 21 and the second nozzle unit 22 are connected together in parallel with the third nozzle unit 23 of Equation 1. Similarly, each of the hanging pots 50, 籀 T Γ ί a kind of 瘵 plated target 5 〇 1. The second type of evaporation target 5 11 and the second type of target 521 can be simultaneously deposited on the surface of the substrate 30. 5 :: The same nozzle unit is coaxially merged and staggered side by side. The actual demand will be the evaporation of two different materials, and the user can base it. One or more different nozzle units are provided in the evaporation device as described above, but are not used to limit the present day's only the preferred embodiments of the present invention, and encompass the scope of equal and clear implementation; that is, where The culture and modifications of applying for a patent in accordance with the present invention are all covered by the scope of the invention patent.
第14頁 200523380 圖式簡單說明 第1圖係為本發明第一實施例之示意圖; 第2 - A圖係為本發明第一實施例之第一喷嘴單元與第二喷 嘴單元分解時之上視圖; 第2-B圖係為本發明第一實施例之第一喷嘴單元與第二喷 嘴單元組合後之上視圖; 第3圖係為第一喷嘴單元與第二喷嘴單元中其中一組第一 喷頭及第二喷頭組合後之細部侧視圖; 第4-A圖係為本發明第二實施例之第一喷嘴單元與第二喷 嘴單元分解時之上視圖; 第4-B圖係為本發明第二實施例之第一喷嘴單元與第二喷 嘴單元組合後之上視圖; 第5圖係為第一喷嘴單元與第二喷嘴單元組合後之侧視圖; 第6 - A圖係為第一喷嘴單元與第二喷嘴單元中其中一組第 一喷頭及第二喷頭分解時之細部側視圖; 第6-B圖係為第一喷嘴單元與第二喷嘴單元中其中一組第 一喷頭及第二喷頭組合後之細部侧視圖; 第7-A圖係為本發明第二實施例之多個(3個)不同喷嘴單元 分解時之上視圖; 第7-B圖係為本發明第二實施例之多個(3個)不同喷嘴單元 組合後之上視圖; 第8-A圖係為第一喷嘴單元、第二喷嘴單元與第三喷嘴單 元中其中一組第一喷頭、第二噴頭與第三喷頭分解時之細 部侧視圖; 第8-B圖係為第一喷嘴單元、第二喷嘴單元與第三喷嘴單Page 14 200523380 Brief Description of Drawings Figure 1 is a schematic diagram of the first embodiment of the present invention; Figure 2-A is a top view of the first nozzle unit and the second nozzle unit of the first embodiment of the present invention when disassembled Figure 2-B is a top view of a combination of the first nozzle unit and the second nozzle unit according to the first embodiment of the present invention; Figure 3 is a first group of the first nozzle unit and the second nozzle unit A detailed side view of the nozzle and the second nozzle combined; Figure 4-A is a top view of the first nozzle unit and the second nozzle unit in the second embodiment of the present invention when disassembled; Figure 4-B is The top view of the first nozzle unit and the second nozzle unit combined according to the second embodiment of the present invention; FIG. 5 is a side view of the combination of the first nozzle unit and the second nozzle unit; A detailed side view of a nozzle unit and a second nozzle unit when a group of the first nozzle and the second nozzle are disassembled; FIG. 6-B is a group of the first nozzle unit and the second nozzle unit A detailed side view of the nozzle and the second nozzle combined; Figure 7-A shows this Top view of a plurality of (3) different nozzle units of the second embodiment of the invention when disassembled; Figure 7-B is a top view of a combination of multiple (3) different nozzle units of the second embodiment of the invention; Figure 8-A is a detailed side view of a group of the first nozzle unit, the second nozzle unit, and the third nozzle unit when the first nozzle unit, the second nozzle unit, and the third nozzle unit are disassembled; It is the first nozzle unit, the second nozzle unit and the third nozzle unit.
第15頁 200523380 圖式簡早說明 元中其中一組第一喷頭、第二喷頭與第三喷頭組合後之細 部側視圖; 第9 - A圖係為本發明第一實施例與第二實施例並用時,多 個(3個)不同喷嘴單元分解時之上視圖; 第9 -B圖係為本發明第一實施例與第二實施例並用時,多 個(3個)不同喷嘴單元組合後之上視圖; 第1 Ο-A圖係為第一喷嘴單元、第二喷嘴單元與第三喷嘴單 元中其中一組第一喷頭、第二喷頭與第三喷頭分解時之細 部側視圖;及Page 15 200523380 The diagram briefly illustrates the detailed side view of a group of the first nozzle, the second nozzle, and the third nozzle in the set; Figure 9-A shows the first embodiment and the first embodiment of the present invention. Top view when multiple (3) different nozzle units are disassembled when the two embodiments are used in combination; Figure 9-B shows the multiple (3) different nozzles when the first embodiment and the second embodiment of the invention are used in combination Top view after unit combination; Figure 10-A shows the first nozzle unit, the second nozzle unit, and the third nozzle unit of the first nozzle unit, the second nozzle unit, and the third nozzle unit when they are disassembled. Detailed side view; and
第1 0-B圖係為第一喷嘴單元、第二喷嘴單元與第三喷嘴單 元中其中一組第一喷頭、第二喷頭與第三喷頭組合後之細 部側視圖。 【圖式符號說明】 10 基板載座 20 線型蒸發源模組 21 第一喷嘴單元 211 第一喷頭 22 第二噴嘴單元 221 第二喷頭Figure 10-B is a detailed side view of a group of the first nozzle unit, the second nozzle unit, and the third nozzle unit of the first nozzle unit, the second nozzle unit, and the third nozzle unit. [Symbol description] 10 Substrate carrier 20 Linear evaporation source module 21 First nozzle unit 211 First nozzle 22 Second nozzle unit 221 Second nozzle
23 第三喷嘴單元 231 第三喷頭 30 基板 40 光罩 5 0 掛鋼23 Third nozzle unit 231 Third nozzle 30 Substrate 40 Photomask 5 0 Hanging steel
第16頁 200523380Page 16 200523380
第17頁 圖式簡單說明 501 第 一 種 蒸 鍍 靶材 51 坩 鋼 511 第 二 種 蒸 鍍 靶 材 52 坩 鍋 521 第 二 種 蒸 鍍 靶 材 60 連 接 管 61 連 接 管 62 連 接 管 70 恒 溫 控 制 系 統 80 加 熱 控 制 器 81 加 熱 控 制 器 82 加 熱 控 制 器 90 恆 溫 控 制 器 91 恆 溫 控 制 器 92 怪 溫 控 制 器 100 絕 熱 裝 置 110 膜 厚 計 111 膜 厚 計 120 喷 頭 溫 度 控 制 器 121 噴 頭 溫 度 控 制 器 122 喷 頭 溫 度 控 制 器Schematic illustration on page 17 501 First vapor deposition target 51 Crucible steel 511 Second vapor deposition target 52 Crucible 521 Second vapor deposition target 60 Connection tube 61 Connection tube 62 Connection tube 70 Thermostatic control system 80 Heater controller 81 Heater controller 82 Heater controller 90 Thermostat controller 91 Thermostat controller 92 Strange temperature controller 100 Insulation device 110 Film thickness meter 111 Film thickness meter 120 Nozzle temperature controller 121 Nozzle temperature controller 122 Nozzle Temperature Controller
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TW93100292A TWI263690B (en) | 2004-01-06 | 2004-01-06 | Evaporation coating apparatus |
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TW93100292A TWI263690B (en) | 2004-01-06 | 2004-01-06 | Evaporation coating apparatus |
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TW200523380A true TW200523380A (en) | 2005-07-16 |
TWI263690B TWI263690B (en) | 2006-10-11 |
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TW93100292A TWI263690B (en) | 2004-01-06 | 2004-01-06 | Evaporation coating apparatus |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI396758B (en) * | 2005-08-25 | 2013-05-21 | Canon Tokki Corp | Vacuum evaporation method and device for organic material |
CN114231912A (en) * | 2021-12-30 | 2022-03-25 | 武汉天马微电子有限公司 | Evaporation device and control method thereof |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101084234B1 (en) | 2009-11-30 | 2011-11-16 | 삼성모바일디스플레이주식회사 | Deposition source, Deposition apparatus using the same and method for forming thin film |
US8590338B2 (en) * | 2009-12-31 | 2013-11-26 | Samsung Mobile Display Co., Ltd. | Evaporator with internal restriction |
KR102192500B1 (en) * | 2013-10-24 | 2020-12-17 | 히다치 조센 가부시키가이샤 | Manifold for vacuum evaporation apparatus |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI396758B (en) * | 2005-08-25 | 2013-05-21 | Canon Tokki Corp | Vacuum evaporation method and device for organic material |
CN114231912A (en) * | 2021-12-30 | 2022-03-25 | 武汉天马微电子有限公司 | Evaporation device and control method thereof |
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TWI263690B (en) | 2006-10-11 |
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