200522242 五、發明說明（1) 【發明所屬之技術領域】 本發明係關於一種監控除氣狀態的方法，特別是關於 使用一種因濕氣存在而具有不同介電常數值的材質來形成 一監控層，來進行除氣狀態的監控的方法。 【先前技術】 依據半導體工業的鐵則-摩爾定律的預測，半導體晶 片上所能容納的電晶體數量是以每1. 5至2年為一週期，逐 期倍增。再舊的技術裡，單位面積内只能容納一千個電晶 體的晶片，在新的技術裡卻能擠進二千個。所以同樣製作 一片含一千個電晶體的晶片，尺寸將是過去的一半。因為 單位面積内擁有更多的電晶體，因此I C晶片中導線電路的 間距極小，故當有水氣存在時，導線間很容易建立一強大 的電場，且在相同導體金屬間會引發電解反應 (Electrolytic Reaction)，使陽極金屬溶解，陰極金屬 產生鍍析附著，而在不同導體金屬間，水氣會引發電池 (Galvanic Cell)反應而產生腐ϋ，這些反應都會造成1C 元件的劣化與損壞。 因此，除氣（de-gas)製程對1C元件的可靠度是一相 當重要的程序，但是因為除氣製程為一低溫且不易監控的 製程，因此往往造成於製程時除氣不足，而導致元件失效 〇 所以，本發明針對上述之問題提出一種監控除氣狀態 的方法，來解決上述除氣製程不易監控的困擾，並進而降 低元件因水氣而失效的危險。200522242 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method for monitoring a degassing state, and in particular, to forming a monitoring layer using a material having different dielectric constant values due to the presence of moisture. To monitor the outgassing status. [Previous Technology] According to the prediction of the Moore's Law of the semiconductor industry, the number of transistors that can be accommodated on a semiconductor wafer is doubled every 1.5 to 2 years. No matter how old the technology is, only one thousand crystal chips can be accommodated in a unit area, but in the new technology, it can squeeze two thousand. So also make a wafer containing a thousand transistors, which will be half the size of the past. Because there are more transistors in a unit area, the pitch of the lead circuits in the IC chip is extremely small. Therefore, when there is water and gas, a strong electric field is easily established between the leads, and an electrolytic reaction will be caused between the same conductive metals ( Electrolytic Reaction), which dissolves the anode metal and causes the cathode metal to plate out and adhere, and between different conductor metals, water and gas will cause the Galvanic Cell to react and cause decay. These reactions will cause the degradation and damage of the 1C element. Therefore, the de-gas process is a very important procedure for the reliability of 1C components. However, because the de-gas process is a low-temperature and difficult-to-monitor process, it is often caused by insufficient out-gassing during the process, leading to components Failure. Therefore, the present invention proposes a method for monitoring the degassing state in response to the above problems, to solve the problem that the degassing process is difficult to monitor, and further reduces the risk of failure of components due to moisture.
200522242 五、發明說明（2) 【發明内容】 本發明之主要目的，在於提供一種監控除氣狀態的方 法，其係能夠有效的監控製程時晶片的除氣狀態。 本發明之另一目的，在於提供一種監控除氣狀態的方 法，其能夠簡便且快速的判斷除氣狀態。 本發明之再一目的，在於提供一種監控除氣狀態的方 法，其能夠降低元件因水氣存在而導致裂化與損壞的機率 〇 為達上述之目的，本發明提供一種監控除氣狀態的方 法，其包括有下列步驟提供一晶片；於該晶片上形成一監 控層，並量測監控層之介電常數值；然後將該晶片置於一 待測定環境；以及對該晶片進行一除氣製程後，量測該監 控層之介電常數值，藉由監控層之介電常數值的變化即可 得知除氣的效果，提供了因處於較低溫度而難以監控的除 氣製程一個簡單容易的監控方法。 茲為使 貴審查委員對本發明之結構特徵及所達成之 功效更有進一步之瞭解與認識，謹佐以較佳之實施例圖及 配合詳細之說明，說明如後： 【實施方式】 本發明為一種監控除氣狀態的方法，其係可使用於半 導體製程中任何需要除氣的製程中，來進行除氣結果的檢 測，於此係以一晶片經蝕刻後需一洗淨製程來作為待測環 境來說明本發明，習知此領域的人士應有的認知是許多的 步驟可以改變，如除氣的製程之方式等，與薄膜這些一般200522242 V. Description of the invention (2) [Summary] The main object of the present invention is to provide a method for monitoring the outgassing state, which can effectively monitor the outgassing state of the wafer during the manufacturing process. Another object of the present invention is to provide a method for monitoring an outgassing state, which can easily and quickly determine an outgassing state. Another object of the present invention is to provide a method for monitoring the degassing state, which can reduce the probability of cracking and damage of components due to the presence of water and gas. To achieve the above purpose, the present invention provides a method for monitoring the degassing state, It includes the following steps: providing a wafer; forming a monitoring layer on the wafer, and measuring the dielectric constant value of the monitoring layer; then placing the wafer in an environment to be measured; and performing a degassing process on the wafer Measure the dielectric constant value of the monitoring layer. The effect of degassing can be obtained by the change of the dielectric constant value of the monitoring layer. It provides a simple and easy degassing process that is difficult to monitor because it is at a lower temperature. Monitoring methods. In order to make your review members have a better understanding and understanding of the structural features and achieved effects of the present invention, I would like to refer to the preferred embodiment diagrams and detailed descriptions as follows: [Embodiment] The present invention is a kind of A method for monitoring the degassing state, which can be used in any process that requires degassing in a semiconductor process to detect the degassing result. Here, a wafer needs to be cleaned after etching to serve as the test environment. To explain the present invention, those who are familiar with this field should recognize that many steps can be changed, such as the process of degassing, etc.
200522242 五、發明說明（3) 的替換無疑地亦不脫離本發明的精神及範疇。 首先 先k疋 胃心著濕氣含量而介電值隨之變化之 材質作為一 I控層之材質，如氟化矽玻璃（FSG)，其介電 常數值會隨著水氣的含量增加而上升。 將 其中 電常數 於特定 應室中 到除氣 可以是 完成後 氣前與 化，進 一晶片 該晶片 值，接 的位置 之機械 反應室 藉由熱 ，對氟 除氣後 而獲知 表面形 可以為 著對量 ，此時 手臂， 中進行 處理或 化矽玻 之介電 除氣成 氟化石夕玻璃層來作為一 一控片，然後量 測晶片進行洗淨 並提供量測晶片 讓機械手臂得以 除氣（de-gas)製 是電漿處理將濕 璃層進行介電常 常數值，即可得 效。 測氟化石夕破 ，再將量測 的位置資料 精確地抓取 程’其中該 氣去除，當 數值量測， 知介電常數 璃層的介 晶片定位 給除氣反 量測晶片 除氣製程 除氣製程 再比較除 值的變 請參閱第一圖，係對一氟化矽玻璃進行濕氣對介 數值變化的量測’首先將一氟化矽玻璃置於待測環境下吊 經過55天後，其介電常數值變化率8%，對該氟化碎^璃於 4 0 0°C下進行除氣5分鐘可以得到氟化矽玻璃介電常數值^ 化率1 %之狀態1 ’接著再將該氟化矽玻璃置於該待測環境 下2 5天後，對該氟化矽玻璃於4 0 (Tc進行除氣3 0秒，即^ 得到介電常數值由7%變化率降低至3%變化率之狀態2，接 著再將該氟化矽玻璃置於該待測環境下1 0天後，對該氣化 矽玻璃利用電漿熱處理於4 1 0°C進行除氣3 3秒，即可得到 狀態3之介電常數值由6 %變化率降低至1 %以下的變化率，200522242 V. The replacement of the description of the invention (3) undoubtedly does not depart from the spirit and scope of the present invention. First of all, the material of the stomach with the moisture content and the dielectric value changing as the material of an I-control layer, such as fluorinated silica glass (FSG), the dielectric constant value will increase as the moisture content increases. rise. The electric constant in the specific reaction chamber to the degassing can be before and after the completion of the gas, enter a wafer value of the wafer, the mechanical reaction chamber at the location to determine the surface shape after degassing the fluorine by heat. For the measurement, at this time, the arm is processed or the dielectric degassing of the silica glass is converted into a fluorite glass layer as a one-to-one control sheet, and then the measurement chip is cleaned and the measurement chip is provided to allow the robotic arm to degas. (De-gas) system is the plasma treatment of the wet glass layer dielectric constant value, which can be effective. Measure the broken fluorite stone, and then accurately capture the measured position data. In which the gas is removed. When the value is measured, the dielectric chip of the dielectric constant glass layer is positioned for the degassing inverse measurement. For the comparison of the divisor changes in the gas manufacturing process, please refer to the first figure. It is a measurement of the change in the moisture intermediary value of monofluoride silicon glass. First, place the monofluoride silicon glass in the test environment and hang it for 55 days. , Its dielectric constant value change rate is 8%, the fluorinated sintered glass is degassed at 400 ° C for 5 minutes to obtain the state of the dielectric constant value of the fluorinated silica glass 1%. After placing the fluorinated silica glass in the test environment for 25 days, the fluorinated silica glass was degassed at 40 ° C. for 30 seconds, that is, the dielectric constant value was reduced from 7%. To state 3 with a change rate of 3%, and then the fluorinated silica glass is placed in the test environment for 10 days, and then the gasified silica glass is degassed by plasma heat treatment at 4 1 0 ° C 3 3 In seconds, the dielectric constant value of state 3 is reduced from 6% change rate to less than 1% change rate.
200522242 五、發明說明（4) 再將該氟化矽玻璃置於該待測環境下經過1 0天，對該氟化 矽玻璃進行於3 5 0°C除氣處理3分鐘，可使該氟化矽玻璃介 電常數值改變量由2 . 8 %降至1 %以下，如狀態4所示，由此 實驗可得濕氣對經不同除氣製程後之氟化矽玻璃介電常數 值得影響，與經除氣製程後氟化矽玻璃之介電常數值的變 化。 綜上所述，本發明係為一種除氣裝態之監控方式，其 係利用一種會因為水氣含量不同而導致介電常數值不同的 材質來進行除氣狀態的監控，其係對於習知對除氣狀態難 以控制的問題提出一簡單的方式來解決，使除氣過程的控 制更具效率與簡便。 惟以上所述者，僅為本發明一較佳實施例而已，並非 用來限定本發明實施之範圍，故舉凡依本發明申請專利範 圍所述之形狀、構造、特徵及精神所為之均等變化與修飾 ，均應包括於本發明之申請專利範圍内。200522242 V. Description of the invention (4) Put the fluorinated silica glass in the test environment for 10 days, and degas the fluorinated silica glass at 350 ° C for 3 minutes to make the fluorine The change of the dielectric constant of siliconized glass decreased from 2.8% to less than 1%, as shown in state 4. From this experiment, it can be obtained that the moisture has a detrimental effect on the dielectric constant of fluorinated silicon glass after different degassing processes. , And the change in the dielectric constant of the fluorinated silica glass after the degassing process. In summary, the present invention is a monitoring method for the degassing state, which uses a material that will cause different dielectric constant values due to different water and gas content to monitor the degassing state. A simple method is proposed to solve the problem that the outgassing state is difficult to control, so that the control of the outgassing process is more efficient and simple. However, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of implementation of the present invention. Therefore, for example, changes in shape, structure, characteristics, and spirit in accordance with the scope of the patent application for the present invention are equivalent. Modifications should be included in the scope of patent application of the present invention.
200522242 圖式簡單說明 第一圖係為本發明對一氟化矽玻璃層進行濕氣對介電常數 值與以不同熱處理條件下介電常數值的變化進行量測。200522242 Brief description of the diagram The first diagram is the measurement of the dielectric constant value and the change of the dielectric constant value under different heat treatment conditions by moisture of a silicon fluoride glass layer according to the present invention.