CN100374850C - Degassing state monitoring method - Google Patents
Degassing state monitoring method Download PDFInfo
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- CN100374850C CN100374850C CNB200310122690XA CN200310122690A CN100374850C CN 100374850 C CN100374850 C CN 100374850C CN B200310122690X A CNB200310122690X A CN B200310122690XA CN 200310122690 A CN200310122690 A CN 200310122690A CN 100374850 C CN100374850 C CN 100374850C
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- dielectric constant
- chip
- constant values
- degasification
- gaseity
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Abstract
The present invention provides a degassing state monitoring method which uses a material (such as silicon fluoride glass) capable of resulting in different dielectric constant values because of the existence of moisture to form a monitoring layer. The present invention monitors degassing effect in a degassing process by observing the change of the dielectric constant values in the monitoring layer.
Description
Technical field
The present invention relates to the method that a kind of monitoring removes gaseity, particularly use is a kind of forms-supervisory layers because of there is the material with differing dielectric constant values in moisture, removes the method for the monitoring of gaseity.
Background technology
According to the prediction of the iron rule-Moore's Law of semi-conductor industry, the number of transistors that can hold on the semi-conductor chip be with per 1.5 to 2 years be one-period, by the phase multiplication.In technology in the past, can only hold 1,000 transistorized chips in the unit area, in new technology, but can get into 2,000.Contain 1,000 transistorized chips so make a slice equally, size will be in the past half.Because have more transistor in the unit area, therefore the spacing of wire circuit is minimum in the IC chip, so when aqueous vapor exists, be easy to set up a powerful electric field between lead, and can cause electrolytic reaction (ElectrolyticReaction) at the same conductor intermetallic, make the anode metal dissolving, cathodic metal produces to plate to analyse and adheres to, and at the different conductor intermetallic, aqueous vapor can cause battery (Galvanic Cell) reaction and produce corrosion, and these reactions all can cause the deterioration and the damage of IC assembly.
Therefore, degasification (de-gas) technology is a considerable program to the fiduciary level of IC assembly, but because degassing process is low temperature and the technology that is difficult for monitoring, therefore often causes and remove unsaturated vapor when degassing process, and cause component failures.
So, the present invention is directed to the method that the problems referred to above provide a kind of monitoring to remove gaseity, solve the puzzlement that above-mentioned degassing process is difficult for monitoring, and and then reduce the danger that assembly lost efficacy because of aqueous vapor.
Summary of the invention
Fundamental purpose of the present invention, the method that is to provide a kind of monitoring to remove gaseity, it effectively during monitoring process chip except that gaseity.
Another object of the present invention is to provide a kind of monitoring to remove the method for gaseity, and it can be judged except that gaseity easy and fast.
A further object of the present invention is to provide a kind of monitoring to remove the method for gaseity, and it can reduce assembly and have the probability that causes cracking and damage because of aqueous vapor.
For reaching above-mentioned purpose, the invention provides the method that a kind of monitoring removes gaseity, it comprises the following steps, a chip is provided; On this chip, form a supervisory layers, and measure the dielectric constant values of supervisory layers; Then this chip is placed an environment to be determined; And after this chip carried out a degassing process, measure the dielectric constant values of this supervisory layers, the variation of the dielectric constant values by supervisory layers can be learnt the effect of degasification, provides because of being in simple method for supervising that is easy to of degassing process that lower temperature is difficult to monitor.
Description of drawings
Fig. 1 for the present invention to a fluorinated silica glass layer carry out moisture to the variation of dielectric constant values with measure with the variation of dielectric constant values under the Different Heat Treatment Conditions.
Illustration:
1 condition: following 5 minutes at 400 ℃
2 conditions: following 30 seconds at 400 ℃
3 conditions: utilize electricity slurry thermal treatment 33 seconds down at 410 ℃
4 conditions: 350 ℃ of following degasification processing procedures 3 minutes
Embodiment
The present invention is the method that a kind of monitoring removes gaseity, it can use in semiconductor technology in any technology that needs degasification, carry out degasification result's detection, after etching, need a clean technology to be used as environment to be measured at this with a chip the present invention is described, this field those of ordinary skill should know that many steps of the present invention can change, as the mode of the technology of degasification, the general replacement of film still drops in the claim of the present invention undoubtedly.
At first, earlier selected-can be along with moisture content the variation of dielectric radio and the material that changes as the material of supervisory layers, as fluorinated silica glass (FSG), its dielectric constant values can increase along with the content of aqueous vapor and rise.
One chip surface is formed a fluorinated silica glass layer to be used as-measured chip, wherein this chip can be a control sheet, measure the dielectric constant values of fluorinated silica glass layer then, then measuring chip is cleaned, again measuring chip is positioned certain location, this moment and position information that measuring chip is provided are to the mechanical arm in the degasification reaction chamber, allow mechanical arm accurately be grasped measuring chip and in the degasification reaction chamber, carry out degasification (de-gas) technology, wherein this degassing process can be to handle by thermal treatment or electricity slurry moisture is removed, after degassing process is finished, the fluorinated silica glass layer is carried out dielectric constant values to be measured, compare before the degasification again and the dielectric constant values after the degasification, can learn the variation of dielectric constant values, and then know the degasification effect.
Fig. 1 carries out the measurement that moisture changes dielectric constant values to a fluorinated silica glass, at first a fluorinated silica glass is placed under the environment to be measured, after 55 days, its dielectric constant values rate of change 8%, this fluorinated silica glass is carried out the state 1 that degasification can obtain fluorinated silica glass dielectric constant values rate of change 1% in 5 minutes under 400 ℃, then again this fluorinated silica glass is placed this environment to be measured after following 25 days, this fluorinated silica glass was carried out degasification 30 seconds in 400 ℃, can obtain dielectric constant values is reduced to 3% rate of change by 7% rate of change state 2, then again this fluorinated silica glass is placed this environment to be measured after following 10 days, this fluorinated silica glass utilization electricity slurry thermal treatment was carried out degasification 33 seconds in 410 ℃, the dielectric constant values that can obtain state 3 is reduced to rate of change below 1% by 6% rate of change, again this fluorinated silica glass is placed under this environment to be measured through 10 days, this fluorinated silica glass is carried out at 350 ℃ of degassing processing 3 minutes, this fluorinated silica glass dielectric constant values change amount is reduced to below 1% by 2.8%, shown in state 4, experiment can get moisture thus is worth influence to the fluorinated silica glass specific inductive capacity behind different degassing process, with the variation of the dielectric constant values of fluorinated silica glass behind degassing process.
In sum, the present invention is the monitor mode for a kind of degasification dress attitude, it is the monitoring that utilizes a kind of meeting to cause the different material of dielectric constant values to remove gaseity because vapor content is different, it is to solve removing unmanageable this FAQs proposition one simple mode of gaseity, makes the control of degassing procedure have more efficient and easy.
Above-described embodiment only is used to illustrate technological thought of the present invention and characteristics, its purpose makes those skilled in the art can understand content of the present invention and is implementing according to this, therefore can not only limit claim of the present invention with present embodiment, be all equal variation or modifications of doing according to disclosed spirit, still drop in the claim of the present invention.
Claims (2)
1. a monitoring removes the method for gaseity, comprises the following steps:
One chip is provided;
On this chip, form a supervisory layers, and measure the dielectric constant values of this supervisory layers;
This chip is placed an environment to be determined; And
After this chip carried out a degassing process, measure the dielectric constant values of this supervisory layers, can learn the effect of degasification by the variation of this supervisory layers dielectric constant values,
Wherein, the material of described supervisory layers is one to have the fluorinated silica glass that different dielectric often is worth variation along with vapor content is different, and described chip is a control sheet.
2. monitoring according to claim 1 removes the method for gaseity, it is characterized in that: described degassing process mode can be thermal treatment degasification or the degasification of electricity slurry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200310122690XA CN100374850C (en) | 2003-12-24 | 2003-12-24 | Degassing state monitoring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200310122690XA CN100374850C (en) | 2003-12-24 | 2003-12-24 | Degassing state monitoring method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1632550A CN1632550A (en) | 2005-06-29 |
| CN100374850C true CN100374850C (en) | 2008-03-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CNB200310122690XA Expired - Fee Related CN100374850C (en) | 2003-12-24 | 2003-12-24 | Degassing state monitoring method |
Country Status (1)
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| CN (1) | CN100374850C (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11101766A (en) * | 1997-09-26 | 1999-04-13 | Ishihara Sangyo:Kk | Humidity-sensitive sensor |
| CN1445538A (en) * | 2002-03-20 | 2003-10-01 | 株式会社电装 | Capacitance humidity sensor with passivated layer |
-
2003
- 2003-12-24 CN CNB200310122690XA patent/CN100374850C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11101766A (en) * | 1997-09-26 | 1999-04-13 | Ishihara Sangyo:Kk | Humidity-sensitive sensor |
| CN1445538A (en) * | 2002-03-20 | 2003-10-01 | 株式会社电装 | Capacitance humidity sensor with passivated layer |
Non-Patent Citations (5)
| Title |
|---|
| VLSI互连线系统中的低介电常数材料与工艺研究. 宋登元，王永青，孙荣霞.半导体情报，第37卷第2期. 2000 * |
| 一种新型的CMOS集成湿度传感器. 顾磊，秦明，黄庆安.微纳电子技术. 2003 * |
| 低介电常数含氟氧化硅薄膜的研究. 丁士进，张卫，王鹏飞，张剑云，刘志杰，王季陶.功能材料，第31卷第5期. 2000 * |
| 双嵌入式低k介电层/铜工艺技术. 利定东，濮胜.半导体技术，第28卷第3期. 2003 * |
| 粮食烘干在线水分监测系统的研究设计. 王洪明，曾为民.农机化研究，第3期. 2003 * |
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| Publication number | Publication date |
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| CN1632550A (en) | 2005-06-29 |
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