TW200520172A - Bounding wire and IC device using the same - Google Patents

Bounding wire and IC device using the same

Info

Publication number
TW200520172A
TW200520172A TW093131359A TW93131359A TW200520172A TW 200520172 A TW200520172 A TW 200520172A TW 093131359 A TW093131359 A TW 093131359A TW 93131359 A TW93131359 A TW 93131359A TW 200520172 A TW200520172 A TW 200520172A
Authority
TW
Taiwan
Prior art keywords
bounding wire
cord
capping layer
horizontal plane
bounding
Prior art date
Application number
TW093131359A
Other languages
English (en)
Inventor
Shingo Kaimori
Tsuyoshi Nonaka
Masanori Ioka
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003358971A external-priority patent/JP2005123499A/ja
Priority claimed from JP2003359185A external-priority patent/JP2005123511A/ja
Priority claimed from JP2003359814A external-priority patent/JP2005123540A/ja
Priority claimed from JP2003404903A external-priority patent/JP2005167020A/ja
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200520172A publication Critical patent/TW200520172A/zh

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
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    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
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    • H01L2924/01206—6N purity grades, i.e. 99.9999%
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Ropes Or Cables (AREA)
TW093131359A 2003-10-20 2004-10-15 Bounding wire and IC device using the same TW200520172A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003358971A JP2005123499A (ja) 2003-10-20 2003-10-20 ボンディングワイヤーおよびそれを使用した集積回路デバイス
JP2003359185A JP2005123511A (ja) 2003-10-20 2003-10-20 ボンディングワイヤーおよびそれを使用した集積回路デバイス
JP2003359814A JP2005123540A (ja) 2003-10-20 2003-10-20 ボンディングワイヤーおよびそれを使用した集積回路デバイス
JP2003404903A JP2005167020A (ja) 2003-12-03 2003-12-03 ボンディングワイヤーおよびそれを使用した集積回路デバイス

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US (1) US20070235887A1 (zh)
EP (1) EP1677345A1 (zh)
KR (1) KR20060090700A (zh)
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DE102006044691B4 (de) * 2006-09-22 2012-06-21 Infineon Technologies Ag Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements
WO2009014168A1 (ja) * 2007-07-24 2009-01-29 Nippon Steel Materials Co., Ltd. 半導体装置用ボンディングワイヤおよびワイヤボンディング方法
KR101380387B1 (ko) * 2007-09-12 2014-04-02 서울반도체 주식회사 Ｌｅｄ 패키지
JP4617375B2 (ja) * 2007-12-03 2011-01-26 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
WO2011013527A1 (ja) * 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤー
EP2469992B1 (en) * 2010-12-23 2015-02-11 Atotech Deutschland GmbH Method for obtaining a palladium surface finish for copper wire bonding on printed circuit boards and IC-substrates
WO2013076548A1 (en) * 2011-11-26 2013-05-30 Microbonds Inc. Bonding wire and process for manufacturing a bonding wire
KR101394619B1 (ko) * 2012-01-11 2014-05-13 희성금속 주식회사 내산화 유기물 또는 내산화 유기물과 금속이 코팅된 내산화 반도체 패키지용 본딩 와이어
JP5786042B2 (ja) * 2012-01-25 2015-09-30 日鉄住金マイクロメタル株式会社 ボンディングワイヤ及びその製造方法
EP2822029A4 (en) * 2012-02-27 2015-12-23 Nippon Micrometal Corp SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND CONNECTING CABLE
KR101503462B1 (ko) * 2012-09-05 2015-03-18 엠케이전자 주식회사 반도체 장치용 본딩 와이어 및 그의 제조 방법
KR101457559B1 (ko) * 2013-04-19 2014-11-06 연세대학교 산학협력단 저잡음 증폭기
TWI585927B (zh) * 2014-02-21 2017-06-01 新川股份有限公司 半導體裝置的製造方法、半導體裝置以及打線裝置
EP3167482B1 (en) * 2014-07-11 2021-07-14 Heraeus Deutschland GmbH & Co. KG Process for manufacturing of a thick copper wire for bonding applications
WO2016189752A1 (ja) 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
CN106489199B (zh) 2015-06-15 2019-09-03 日铁新材料股份有限公司 半导体装置用接合线
WO2017013796A1 (ja) * 2015-07-23 2017-01-26 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
SG10201509634UA (en) 2015-11-23 2017-06-29 Heraeus Oriental Hitec Co Ltd Coated wire
US10529683B2 (en) * 2015-12-15 2020-01-07 Nippon Steel Chemical & Material Co., Ltd. Bonding wire for semiconductor device
KR102062751B1 (ko) * 2016-03-29 2020-01-06 엔지케이 인슐레이터 엘티디 정전 척 히터
CN105762129B (zh) * 2016-04-27 2018-03-30 山东科大鼎新电子科技有限公司 一种铜基表面镀镍钯金键合丝的制备方法
SG10201607523RA (en) * 2016-09-09 2018-04-27 Heraeus Materials Singapore Pte Ltd Coated wire
JP2019111752A (ja) 2017-12-25 2019-07-11 東芝ホクト電子株式会社 サーマルプリントヘッドおよびサーマルプリンタ
JP2019111751A (ja) 2017-12-25 2019-07-11 東芝ホクト電子株式会社 サーマルプリントヘッドおよびサーマルプリンタ

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US5364706A (en) * 1990-07-20 1994-11-15 Tanaka Denshi Kogyo Kabushiki Kaisha Clad bonding wire for semiconductor device
JPH0479243A (ja) * 1990-07-20 1992-03-12 Tanaka Denshi Kogyo Kk 半導体素子用ボンディング線
US6835898B2 (en) * 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6261436B1 (en) * 1999-11-05 2001-07-17 Asep Tec Co., Ltd. Fabrication method for gold bonding wire
US20040245320A1 (en) * 2001-10-23 2004-12-09 Mesato Fukagaya Bonding wire
JP2004064033A (ja) * 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー
TW200414453A (en) * 2002-03-26 2004-08-01 Sumitomo Electric Wintec Inc Bonding wire and IC device using the bonding wire

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KR20060090700A (ko) 2006-08-14
WO2005038902A1 (ja) 2005-04-28
US20070235887A1 (en) 2007-10-11

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