TW200519197A - Tungsten metal removing solution and method for removing tungsten metal by use thereof - Google Patents

Tungsten metal removing solution and method for removing tungsten metal by use thereof

Info

Publication number
TW200519197A
TW200519197A TW093136900A TW93136900A TW200519197A TW 200519197 A TW200519197 A TW 200519197A TW 093136900 A TW093136900 A TW 093136900A TW 93136900 A TW93136900 A TW 93136900A TW 200519197 A TW200519197 A TW 200519197A
Authority
TW
Taiwan
Prior art keywords
tungsten metal
solution
removing solution
adheres
semiconductor substrate
Prior art date
Application number
TW093136900A
Other languages
English (en)
Chinese (zh)
Inventor
Toshikazu Shimizu
Kaori Watanabe
Hidemitsu Aoki
Original Assignee
Kanto Kagaku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Kagaku filed Critical Kanto Kagaku
Publication of TW200519197A publication Critical patent/TW200519197A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/56—Cleaning of wafer backside

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW093136900A 2003-12-02 2004-11-30 Tungsten metal removing solution and method for removing tungsten metal by use thereof TW200519197A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003403240A JP4355201B2 (ja) 2003-12-02 2003-12-02 タングステン金属除去液及びそれを用いたタングステン金属の除去方法

Publications (1)

Publication Number Publication Date
TW200519197A true TW200519197A (en) 2005-06-16

Family

ID=34726600

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093136900A TW200519197A (en) 2003-12-02 2004-11-30 Tungsten metal removing solution and method for removing tungsten metal by use thereof

Country Status (5)

Country Link
US (1) US7351354B2 (https=)
JP (1) JP4355201B2 (https=)
KR (1) KR101135565B1 (https=)
CN (1) CN100516303C (https=)
TW (1) TW200519197A (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050110470A (ko) * 2004-05-19 2005-11-23 테크노세미켐 주식회사 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
KR20050116739A (ko) * 2004-06-08 2005-12-13 동부아남반도체 주식회사 기판 상의 금속막 스트립 방법
US7790624B2 (en) * 2008-07-16 2010-09-07 Global Foundries Inc. Methods for removing a metal-comprising material from a semiconductor substrate
CN103484864B (zh) * 2012-06-11 2016-04-27 北大方正集团有限公司 钨层去除溶液
JP5854230B2 (ja) * 2012-12-13 2016-02-09 栗田工業株式会社 基板洗浄液および基板洗浄方法
JP6460729B2 (ja) * 2014-10-31 2019-01-30 富士フイルム株式会社 基板処理方法、及び、半導体素子の製造方法
JP6363724B2 (ja) * 2014-10-31 2018-07-25 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
JP6769760B2 (ja) 2016-07-08 2020-10-14 関東化学株式会社 エッチング液組成物およびエッチング方法
CN108130535B (zh) * 2016-12-01 2020-04-14 添鸿科技股份有限公司 钛钨合金的蚀刻液
JP6941959B2 (ja) 2017-03-31 2021-09-29 関東化学株式会社 エッチング液組成物およびエッチング方法
US12509632B2 (en) 2020-03-31 2025-12-30 Tokuyama Corporation Treatment liquid for semiconductors and method for producing same
WO2022030627A1 (ja) 2020-08-07 2022-02-10 株式会社トクヤマ 半導体ウエハ用処理液

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2681433B2 (ja) * 1992-09-30 1997-11-26 株式会社フロンテック エッチング剤およびこのエッチング剤を使用するシリコン半導体部材のエッチング方法、および洗浄剤およびこの洗浄剤を使用するシリコン半導体部材の洗浄方法
US6232228B1 (en) * 1998-06-25 2001-05-15 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method
KR100271769B1 (ko) * 1998-06-25 2001-02-01 윤종용 반도체소자의 제조방법, 이를 위한 반도체소자 제조용 식각액조성물 및 반도체소자
JP4240424B2 (ja) * 1998-10-23 2009-03-18 エルジー ディスプレイ カンパニー リミテッド エッチング剤及びこれを用いた電子機器用基板の製造方法
TW490756B (en) * 1999-08-31 2002-06-11 Hitachi Ltd Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components
JP2002016053A (ja) * 2000-06-28 2002-01-18 Hitachi Ltd 半導体装置の製造方法
JP4083528B2 (ja) * 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物

Also Published As

Publication number Publication date
US7351354B2 (en) 2008-04-01
KR20050053330A (ko) 2005-06-08
KR101135565B1 (ko) 2012-04-17
CN1626699A (zh) 2005-06-15
JP2005166924A (ja) 2005-06-23
US20050156140A1 (en) 2005-07-21
JP4355201B2 (ja) 2009-10-28
CN100516303C (zh) 2009-07-22

Similar Documents

Publication Publication Date Title
SG10201902327VA (en) Etching solution for tungsten word line recess
TW200706647A (en) Aqueous cleaner with low metal etch rate
TW200519197A (en) Tungsten metal removing solution and method for removing tungsten metal by use thereof
TWI329360B (en) Semiconductor device production method and semiconductor device
WO2005043250A3 (en) Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
DE60323148D1 (de) Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen
TW200603026A (en) Method for electro-luminescent display fabrication
NO20040713L (no) Stal til raoljetank og fremgangsmate for fremstilling derav, raoljetank og fremgangsmate for korrosjonsbeskyttelse.
TW200507120A (en) Methods of selectively bumping integrated circuit substrates and related structures
EP1580800A4 (en) METHOD FOR CUTTING A SEMICONDUCTOR SUBSTRATE
TW200702928A (en) Composition for underlayer film of resist and process for producing the same
WO2002074748A8 (en) Metalloproteinase inhibitors
TW200740989A (en) Semiconductor wafer cleaning solution, method for cleaning a semiconductor wafer and method for forming an interconnect structure of an integrated circuit
TW200509237A (en) Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof
WO2009023675A3 (en) Improved metal conservation with stripper solutions containing resorcinol
TW200613934A (en) Composition for removing photoresist residue and polymer residue
TWI263271B (en) Method for enhancing fluorine utilization
TW200801857A (en) Photoresist stripping liquid and method for processing substrate using the liquid
DK1789527T3 (da) Rensningssammensætninger til mikroelektroniksubstrater
TW200707131A (en) Photoresist stripper composition and methods for forming wire structures and for fabricating thin film transistor substrate using composition
TW200502381A (en) Cleaning liquid composition for semiconductor substrate
TW200732864A (en) Composition for removing residue of a wiring substrate, and washing method thereof
EP2023382A4 (en) METHOD OF PROCESSING, PAINT MASK AND METHOD FOR PRODUCING A SEMICONDUCTOR CONSTRUCTION ELEMENT THEREWITH
WO2005027859A3 (en) Patch
ATE553415T1 (de) Lichtempfindliche polyimid-precursor- zusammensetzungen