TW200513685A - Image sensor having combination color filter and concave-shaped mirco-lenses - Google Patents

Image sensor having combination color filter and concave-shaped mirco-lenses

Info

Publication number
TW200513685A
TW200513685A TW092128198A TW92128198A TW200513685A TW 200513685 A TW200513685 A TW 200513685A TW 092128198 A TW092128198 A TW 092128198A TW 92128198 A TW92128198 A TW 92128198A TW 200513685 A TW200513685 A TW 200513685A
Authority
TW
Taiwan
Prior art keywords
image sensor
concave
micro
mirco
lenses
Prior art date
Application number
TW092128198A
Other languages
English (en)
Other versions
TWI252937B (en
Inventor
Katsumi Yamamoto
Original Assignee
Hua Wei Semiconductor Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hua Wei Semiconductor Shanghai Co Ltd filed Critical Hua Wei Semiconductor Shanghai Co Ltd
Publication of TW200513685A publication Critical patent/TW200513685A/zh
Application granted granted Critical
Publication of TWI252937B publication Critical patent/TWI252937B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
TW092128198A 2002-10-25 2003-10-09 Image sensor having combination color filter and concave-shaped micro-lenses TWI252937B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/280,394 US6737719B1 (en) 2002-10-25 2002-10-25 Image sensor having combination color filter and concave-shaped micro-lenses

Publications (2)

Publication Number Publication Date
TW200513685A true TW200513685A (en) 2005-04-16
TWI252937B TWI252937B (en) 2006-04-11

Family

ID=32069376

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092128198A TWI252937B (en) 2002-10-25 2003-10-09 Image sensor having combination color filter and concave-shaped micro-lenses

Country Status (4)

Country Link
US (1) US6737719B1 (zh)
EP (1) EP1414069A3 (zh)
CN (1) CN1505164A (zh)
TW (1) TWI252937B (zh)

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US7307788B2 (en) * 2004-12-03 2007-12-11 Micron Technology, Inc. Gapless microlens array and method of fabrication
US7227692B2 (en) 2003-10-09 2007-06-05 Micron Technology, Inc Method and apparatus for balancing color response of imagers
KR100526466B1 (ko) * 2003-11-12 2005-11-08 매그나칩 반도체 유한회사 시모스 이미지센서 제조 방법
US7029944B1 (en) * 2004-09-30 2006-04-18 Sharp Laboratories Of America, Inc. Methods of forming a microlens array over a substrate employing a CMP stop
KR100672702B1 (ko) * 2004-12-29 2007-01-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
KR100606922B1 (ko) * 2004-12-30 2006-08-01 동부일렉트로닉스 주식회사 보호막을 이용한 씨모스 이미지 센서 및 그 제조방법
US20060198008A1 (en) * 2005-03-07 2006-09-07 Micron Technology, Inc. Formation of micro lens by using flowable oxide deposition
US7196388B2 (en) * 2005-05-27 2007-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. Microlens designs for CMOS image sensors
US8053853B2 (en) * 2006-05-03 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Color filter-embedded MSM image sensor
EP1890315A3 (en) * 2006-08-18 2009-07-01 LG Electronics Inc. Filter and plasma display device thereof
US8054371B2 (en) * 2007-02-19 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Color filter for image sensor
JP4480740B2 (ja) * 2007-07-03 2010-06-16 シャープ株式会社 固体撮像素子およびその製造方法、電子情報機器
CN101769784B (zh) * 2008-12-27 2012-06-20 鸿富锦精密工业（深圳）有限公司 感测器组合
JP2010239076A (ja) * 2009-03-31 2010-10-21 Sony Corp 固体撮像装置とその製造方法、及び電子機器
US8487394B2 (en) * 2009-10-27 2013-07-16 Kabushiki Kaisha Toshiba Solid-state imaging device and method of manufacturing the same
JP2012204354A (ja) * 2011-03-23 2012-10-22 Sony Corp 固体撮像装置、固体撮像装置の製造方法及び電子機器
CN103515398A (zh) * 2012-06-27 2014-01-15 奇景光电股份有限公司 晶圆级相机模块阵列
EP3007228B1 (en) * 2013-05-21 2021-03-17 Photonic Sensors & Algorithms, S.L. Monolithic integration of plenoptic lenses on photosensor substrates
US9513411B2 (en) * 2014-07-31 2016-12-06 Visera Technologies Company Limited Double-lens structures and fabrication methods thereof
CN104465688A (zh) * 2014-12-23 2015-03-25 北京思比科微电子技术股份有限公司 一种图像传感器微透镜结构及其制作方法
JP6966934B2 (ja) * 2017-03-29 2021-11-17 パナソニックＩｐマネジメント株式会社 画像生成装置及び撮像装置
CN109920810B (zh) * 2019-03-22 2021-07-20 德淮半导体有限公司 图像传感器及其形成方法
KR20210130300A (ko) * 2020-04-21 2021-11-01 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

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Also Published As

Publication number Publication date
EP1414069A3 (en) 2005-09-21
CN1505164A (zh) 2004-06-16
EP1414069A2 (en) 2004-04-28
US20040080005A1 (en) 2004-04-29
US6737719B1 (en) 2004-05-18
TWI252937B (en) 2006-04-11

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