TW200511521A - Ultra scalable high speed heterojunction vertical n-channel MISFETS and methods thereof - Google Patents
Ultra scalable high speed heterojunction vertical n-channel MISFETS and methods thereofInfo
- Publication number
- TW200511521A TW200511521A TW093115951A TW93115951A TW200511521A TW 200511521 A TW200511521 A TW 200511521A TW 093115951 A TW093115951 A TW 093115951A TW 93115951 A TW93115951 A TW 93115951A TW 200511521 A TW200511521 A TW 200511521A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- channel
- methods
- high speed
- source
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 210000000746 body region Anatomy 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/463,038 US7205604B2 (en) | 2001-03-13 | 2003-06-17 | Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200511521A true TW200511521A (en) | 2005-03-16 |
TWI294670B TWI294670B (en) | 2008-03-11 |
Family
ID=34102607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093115951A TWI294670B (en) | 2003-06-17 | 2004-06-03 | Ultra scalable high speed heterojunction vertical n-channel misfets and methods thereof |
Country Status (3)
Country | Link |
---|---|
US (2) | US7453113B2 (zh) |
JP (1) | JP4299736B2 (zh) |
TW (1) | TWI294670B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI502741B (zh) * | 2011-03-03 | 2015-10-01 | Cree Inc | 具有高性能通道之半導體裝置 |
TWI577015B (zh) * | 2014-03-28 | 2017-04-01 | 英特爾股份有限公司 | 半導體裝置及製造半導體裝置的方法 |
Families Citing this family (43)
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---|---|---|---|---|
TWI294670B (en) * | 2003-06-17 | 2008-03-11 | Ibm | Ultra scalable high speed heterojunction vertical n-channel misfets and methods thereof |
KR100585111B1 (ko) * | 2003-11-24 | 2006-06-01 | 삼성전자주식회사 | 게르마늄 채널 영역을 가지는 비평면 트랜지스터 및 그제조 방법 |
US7776672B2 (en) | 2004-08-19 | 2010-08-17 | Fuji Electric Systems Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP4857578B2 (ja) * | 2005-03-28 | 2012-01-18 | 富士電機株式会社 | 半導体装置の製造方法 |
EP1932172A1 (en) * | 2005-09-28 | 2008-06-18 | Nxp B.V. | Double gate non-volatile memory device and method of manufacturing |
JP4857697B2 (ja) * | 2005-10-05 | 2012-01-18 | トヨタ自動車株式会社 | 炭化珪素半導体装置 |
JP5779702B2 (ja) * | 2008-02-15 | 2015-09-16 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置及びその製造方法 |
JP6014726B2 (ja) * | 2008-02-15 | 2016-10-25 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置及びその製造方法 |
JP2010123744A (ja) | 2008-11-19 | 2010-06-03 | Elpida Memory Inc | 半導体装置および半導体装置の製造方法 |
JP2010135592A (ja) * | 2008-12-05 | 2010-06-17 | Elpida Memory Inc | 半導体装置及び半導体装置の製造方法 |
US8124487B2 (en) * | 2008-12-22 | 2012-02-28 | Varian Semiconductor Equipment Associates, Inc. | Method for enhancing tensile stress and source/drain activation using Si:C |
US8629478B2 (en) * | 2009-07-31 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure for high mobility multiple-gate transistor |
US8178400B2 (en) * | 2009-09-28 | 2012-05-15 | International Business Machines Corporation | Replacement spacer for tunnel FETs |
CN101819996B (zh) * | 2010-04-16 | 2011-10-26 | 清华大学 | 半导体结构 |
JP5066590B2 (ja) * | 2010-06-09 | 2012-11-07 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置とその製造方法 |
US8258031B2 (en) | 2010-06-15 | 2012-09-04 | International Business Machines Corporation | Fabrication of a vertical heterojunction tunnel-FET |
US8633096B2 (en) | 2010-11-11 | 2014-01-21 | International Business Machines Corporation | Creating anisotropically diffused junctions in field effect transistor devices |
JP2013038336A (ja) * | 2011-08-10 | 2013-02-21 | Toshiba Corp | 半導体装置 |
KR101376221B1 (ko) * | 2011-12-08 | 2014-03-21 | 경북대학교 산학협력단 | 질화물 반도체 소자 및 그 소자의 제조 방법 |
CN103988308B (zh) | 2011-12-09 | 2016-11-16 | 英特尔公司 | 晶体管中的应变补偿 |
CN103247331B (zh) * | 2012-02-13 | 2016-01-20 | 中国科学院微电子研究所 | 半导体存储器件及其访问方法 |
CN102751331B (zh) * | 2012-07-16 | 2015-07-22 | 西安电子科技大学 | 一种应变SiGe回型沟道NMOS集成器件及制备方法 |
CN102751280B (zh) * | 2012-07-16 | 2015-08-19 | 西安电子科技大学 | 一种应变SiGe回型沟道BiCMOS集成器件及制备方法 |
CN102738150B (zh) * | 2012-07-16 | 2015-09-16 | 西安电子科技大学 | 一种应变SiGe BiCMOS集成器件及制备方法 |
CN105493252A (zh) * | 2013-09-26 | 2016-04-13 | 英特尔公司 | 用于片上系统(SoC)应用的垂直非平面半导体器件 |
JP6226765B2 (ja) * | 2014-02-07 | 2017-11-08 | 株式会社東芝 | 半導体素子、半導体素子の製造方法、および半導体装置 |
US9368601B2 (en) | 2014-02-28 | 2016-06-14 | Sandisk Technologies Inc. | Method for forming oxide below control gate in vertical channel thin film transistor |
KR102168936B1 (ko) * | 2014-03-28 | 2020-10-22 | 인텔 코포레이션 | 수직 반도체 디바이스들을 위한 선택적으로 재성장된 상부 컨택트 |
US9318447B2 (en) | 2014-07-18 | 2016-04-19 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and method of forming vertical structure |
US9847233B2 (en) * | 2014-07-29 | 2017-12-19 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and formation thereof |
US9472575B2 (en) * | 2015-02-06 | 2016-10-18 | International Business Machines Corporation | Formation of strained fins in a finFET device |
DE102015110490A1 (de) * | 2015-06-30 | 2017-01-05 | Infineon Technologies Austria Ag | Halbleiterbauelemente und ein Verfahren zum Bilden eines Halbleiterbauelements |
US9647112B1 (en) * | 2016-09-22 | 2017-05-09 | International Business Machines Corporation | Fabrication of strained vertical P-type field effect transistors by bottom condensation |
US9799777B1 (en) * | 2016-10-07 | 2017-10-24 | International Business Machines Corporation | Floating gate memory in a channel last vertical FET flow |
US9911754B1 (en) | 2016-10-07 | 2018-03-06 | Macronix International Co., Ltd. | 3D memory structure |
US10403751B2 (en) * | 2017-01-13 | 2019-09-03 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
US10170618B2 (en) | 2017-03-02 | 2019-01-01 | International Business Machines Corporation | Vertical transistor with reduced gate-induced-drain-leakage current |
US9853028B1 (en) * | 2017-04-17 | 2017-12-26 | International Business Machines Corporation | Vertical FET with reduced parasitic capacitance |
EP3404701A1 (en) * | 2017-05-15 | 2018-11-21 | IMEC vzw | A method for defining a channel region in a vertical transistor device |
US10971629B2 (en) * | 2018-06-28 | 2021-04-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned unsymmetrical gate (SAUG) FinFET and methods of forming the same |
US10672899B2 (en) * | 2018-06-29 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Tunnel field-effect transistor with reduced trap-assisted tunneling leakage |
KR102220032B1 (ko) * | 2018-08-20 | 2021-02-25 | 한국과학기술원 | 폴리 실리콘 이미터 층이 삽입된 2-단자 바이리스터 및 그 제조 방법 |
US10777469B2 (en) * | 2018-10-11 | 2020-09-15 | International Business Machines Corporation | Self-aligned top spacers for vertical FETs with in situ solid state doping |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2727818B2 (ja) * | 1991-09-17 | 1998-03-18 | 日本電気株式会社 | 半導体装置 |
US5920088A (en) * | 1995-06-16 | 1999-07-06 | Interuniversitair Micro-Electronica Centrum (Imec Vzw) | Vertical MISFET devices |
US5963800A (en) * | 1995-06-16 | 1999-10-05 | Interuniversitair Micro-Elektronica Centrum (Imec Vzw) | CMOS integration process having vertical channel |
US5914504A (en) * | 1995-06-16 | 1999-06-22 | Imec Vzw | DRAM applications using vertical MISFET devices |
JP3389009B2 (ja) | 1996-07-02 | 2003-03-24 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5847419A (en) * | 1996-09-17 | 1998-12-08 | Kabushiki Kaisha Toshiba | Si-SiGe semiconductor device and method of fabricating the same |
US6399970B2 (en) * | 1996-09-17 | 2002-06-04 | Matsushita Electric Industrial Co., Ltd. | FET having a Si/SiGeC heterojunction channel |
JPH10112543A (ja) | 1996-10-04 | 1998-04-28 | Oki Electric Ind Co Ltd | 半導体素子および半導体素子の製造方法 |
US6319799B1 (en) * | 2000-05-09 | 2001-11-20 | Board Of Regents, The University Of Texas System | High mobility heterojunction transistor and method |
JP3655175B2 (ja) * | 2000-06-30 | 2005-06-02 | 株式会社東芝 | 半導体記憶装置の製造方法 |
JP2002057329A (ja) | 2000-08-09 | 2002-02-22 | Toshiba Corp | 縦型電界効果トランジスタ及びその製造方法 |
US6524935B1 (en) * | 2000-09-29 | 2003-02-25 | International Business Machines Corporation | Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique |
JP3494638B2 (ja) * | 2002-05-21 | 2004-02-09 | 沖電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
US6998683B2 (en) * | 2002-10-03 | 2006-02-14 | Micron Technology, Inc. | TFT-based common gate CMOS inverters, and computer systems utilizing novel CMOS inverters |
US7042052B2 (en) * | 2003-02-10 | 2006-05-09 | Micron Technology, Inc. | Transistor constructions and electronic devices |
US6927414B2 (en) * | 2003-06-17 | 2005-08-09 | International Business Machines Corporation | High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof |
US6943407B2 (en) * | 2003-06-17 | 2005-09-13 | International Business Machines Corporation | Low leakage heterojunction vertical transistors and high performance devices thereof |
TWI294670B (en) * | 2003-06-17 | 2008-03-11 | Ibm | Ultra scalable high speed heterojunction vertical n-channel misfets and methods thereof |
-
2004
- 2004-06-03 TW TW093115951A patent/TWI294670B/zh not_active IP Right Cessation
- 2004-06-14 JP JP2004175740A patent/JP4299736B2/ja not_active Expired - Fee Related
-
2007
- 2007-04-16 US US11/735,711 patent/US7453113B2/en not_active Expired - Fee Related
-
2008
- 2008-05-02 US US12/114,168 patent/US7679121B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI502741B (zh) * | 2011-03-03 | 2015-10-01 | Cree Inc | 具有高性能通道之半導體裝置 |
TWI577015B (zh) * | 2014-03-28 | 2017-04-01 | 英特爾股份有限公司 | 半導體裝置及製造半導體裝置的方法 |
TWI617026B (zh) * | 2014-03-28 | 2018-03-01 | 英特爾股份有限公司 | 半導體裝置及製造半導體裝置的方法 |
US10096709B2 (en) | 2014-03-28 | 2018-10-09 | Intel Corporation | Aspect ratio trapping (ART) for fabricating vertical semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
US20070241367A1 (en) | 2007-10-18 |
JP4299736B2 (ja) | 2009-07-22 |
JP2005012214A (ja) | 2005-01-13 |
US20080237637A1 (en) | 2008-10-02 |
US7679121B2 (en) | 2010-03-16 |
US7453113B2 (en) | 2008-11-18 |
TWI294670B (en) | 2008-03-11 |
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