TW200511319A - Arrangement of non-volatile memory cell transistors, memory array comprising the same and method of making - Google Patents

Arrangement of non-volatile memory cell transistors, memory array comprising the same and method of making

Info

Publication number
TW200511319A
TW200511319A TW093117034A TW93117034A TW200511319A TW 200511319 A TW200511319 A TW 200511319A TW 093117034 A TW093117034 A TW 093117034A TW 93117034 A TW93117034 A TW 93117034A TW 200511319 A TW200511319 A TW 200511319A
Authority
TW
Taiwan
Prior art keywords
floating gate
gate
transistors
pairs
arrangement
Prior art date
Application number
TW093117034A
Other languages
English (en)
Inventor
Bohumil Lojek
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of TW200511319A publication Critical patent/TW200511319A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7887—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/10—Floating gate memory cells with a single polysilicon layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
TW093117034A 2003-06-18 2004-06-14 Arrangement of non-volatile memory cell transistors, memory array comprising the same and method of making TW200511319A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/465,718 US6888192B2 (en) 2003-04-25 2003-06-18 Mirror image non-volatile memory cell transistor pairs with single poly layer

Publications (1)

Publication Number Publication Date
TW200511319A true TW200511319A (en) 2005-03-16

Family

ID=33551401

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093117034A TW200511319A (en) 2003-06-18 2004-06-14 Arrangement of non-volatile memory cell transistors, memory array comprising the same and method of making

Country Status (5)

Country Link
US (2) US6888192B2 (zh)
EP (1) EP1636849A2 (zh)
CN (1) CN100454574C (zh)
TW (1) TW200511319A (zh)
WO (1) WO2005001840A2 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6888192B2 (en) * 2003-04-25 2005-05-03 Atmel Corporation Mirror image non-volatile memory cell transistor pairs with single poly layer
US6998670B2 (en) * 2003-04-25 2006-02-14 Atmel Corporation Twin EEPROM memory transistors with subsurface stepped floating gates
US20070247915A1 (en) * 2006-04-21 2007-10-25 Intersil Americas Inc. Multiple time programmable (MTP) PMOS floating gate-based non-volatile memory device for a general-purpose CMOS technology with thick gate oxide
US7903465B2 (en) * 2007-04-24 2011-03-08 Intersil Americas Inc. Memory array of floating gate-based non-volatile memory cells
US7688627B2 (en) * 2007-04-24 2010-03-30 Intersil Americas Inc. Flash memory array of floating gate-based non-volatile memory cells
US7773423B1 (en) * 2007-09-27 2010-08-10 National Semiconductor Corporation Low power, CMOS compatible non-volatile memory cell and related method and memory array
KR101087830B1 (ko) * 2009-01-05 2011-11-30 주식회사 하이닉스반도체 반도체 소자의 레이아웃
CN107293582B (zh) * 2017-07-10 2020-04-24 东南大学 面向物联网的硅基具有热电转换功能的bjt器件
KR102472339B1 (ko) * 2017-08-07 2022-12-01 에스케이하이닉스 주식회사 3차원 구조의 반도체 메모리 장치

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US4814594A (en) * 1982-11-22 1989-03-21 Drexler Technology Corporation Updatable micrographic pocket data card
IT1191566B (it) * 1986-06-27 1988-03-23 Sgs Microelettronica Spa Dispositivo di memoria non labile a semiconduttore del tipo a porta non connessa (floating gate) alterabile elettricamente con area di tunnel ridotta e procedimento di fabbricazione
US5108939A (en) * 1990-10-16 1992-04-28 National Semiconductor Corp. Method of making a non-volatile memory cell utilizing polycrystalline silicon spacer tunnel region
JP2541087B2 (ja) * 1992-10-30 1996-10-09 日本電気株式会社 不揮発性半導体記憶装置のデ―タ消去方法
JP2725564B2 (ja) * 1993-09-27 1998-03-11 日本電気株式会社 半導体記憶装置及びそのデータ書込み方法
US5808338A (en) * 1994-11-11 1998-09-15 Nkk Corporation Nonvolatile semiconductor memory
DE69521203T2 (de) * 1995-07-31 2006-01-12 Stmicroelectronics S.R.L., Agrate Brianza Flash-EEPROM mit gesteuerter Entladungszeit der Wortleitungs- und Sourcespannungen nach der Löschung
US6674470B1 (en) * 1996-09-19 2004-01-06 Kabushiki Kaisha Toshiba MOS-type solid state imaging device with high sensitivity
US5761126A (en) 1997-02-07 1998-06-02 National Semiconductor Corporation Single-poly EPROM cell that utilizes a reduced programming voltage to program the cell
JP3183396B2 (ja) 1997-11-20 2001-07-09 日本電気株式会社 不揮発性半導体記憶装置およびその製造方法
US6385689B1 (en) * 1998-02-06 2002-05-07 Analog Devices, Inc. Memory and a data processor including a memory
JP3474758B2 (ja) * 1998-02-16 2003-12-08 株式会社東芝 不揮発性半導体記憶装置
US6243289B1 (en) 1998-04-08 2001-06-05 Micron Technology Inc. Dual floating gate programmable read only memory cell structure and method for its fabrication and operation
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US6831325B2 (en) * 2002-12-20 2004-12-14 Atmel Corporation Multi-level memory cell with lateral floating spacers
US6998670B2 (en) * 2003-04-25 2006-02-14 Atmel Corporation Twin EEPROM memory transistors with subsurface stepped floating gates
US6888192B2 (en) * 2003-04-25 2005-05-03 Atmel Corporation Mirror image non-volatile memory cell transistor pairs with single poly layer
US6919242B2 (en) * 2003-04-25 2005-07-19 Atmel Corporation Mirror image memory cell transistor pairs featuring poly floating spacers
US7098106B2 (en) * 2004-07-01 2006-08-29 Atmel Corporation Method of making mirror image memory cell transistor pairs featuring poly floating spacers

Also Published As

Publication number Publication date
CN1836336A (zh) 2006-09-20
US20040212004A1 (en) 2004-10-28
WO2005001840A3 (en) 2005-11-24
EP1636849A2 (en) 2006-03-22
US6888192B2 (en) 2005-05-03
CN100454574C (zh) 2009-01-21
US20050164452A1 (en) 2005-07-28
WO2005001840A2 (en) 2005-01-06

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