TW200507054A - Pattern decision method and system, mask manufacturing method, adjusting method of focusing performance, exposure method and device, and information recording medium - Google Patents

Pattern decision method and system, mask manufacturing method, adjusting method of focusing performance, exposure method and device, and information recording medium

Info

Publication number
TW200507054A
TW200507054A TW093110653A TW93110653A TW200507054A TW 200507054 A TW200507054 A TW 200507054A TW 093110653 A TW093110653 A TW 093110653A TW 93110653 A TW93110653 A TW 93110653A TW 200507054 A TW200507054 A TW 200507054A
Authority
TW
Taiwan
Prior art keywords
focusing performance
exposure
information
recording medium
information recording
Prior art date
Application number
TW093110653A
Other languages
English (en)
Other versions
TWI234195B (en
Inventor
Shigeru Hirukawa
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200507054A publication Critical patent/TW200507054A/zh
Application granted granted Critical
Publication of TWI234195B publication Critical patent/TWI234195B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW093110653A 2003-04-16 2004-04-16 Pattern determining method and system, method of manufacturing mask, adjusting method of imaging performance, exposure method and apparatus, information recording medium TWI234195B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003111072 2003-04-16

Publications (2)

Publication Number Publication Date
TW200507054A true TW200507054A (en) 2005-02-16
TWI234195B TWI234195B (en) 2005-06-11

Family

ID=33432026

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093110653A TWI234195B (en) 2003-04-16 2004-04-16 Pattern determining method and system, method of manufacturing mask, adjusting method of imaging performance, exposure method and apparatus, information recording medium

Country Status (5)

Country Link
US (1) US20060068301A1 (zh)
JP (1) JPWO2004099874A1 (zh)
KR (1) KR20050121728A (zh)
TW (1) TWI234195B (zh)
WO (1) WO2004099874A1 (zh)

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TWI659260B (zh) * 2014-12-19 2019-05-11 日商Ｈｏｙａ股份有限公司 空白遮罩用基板、空白遮罩及其等之製造方法、轉印用遮罩之製造方法以及半導體元件之製造方法
CN112368706A (zh) * 2018-07-10 2021-02-12 索尼公司 信息处理装置、信息处理方法和程序
TWI771946B (zh) * 2020-03-31 2022-07-21 日商日立全球先端科技股份有限公司 帶電粒子線裝置

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KR100639676B1 (ko) * 2004-09-21 2006-10-30 삼성전자주식회사 반도체 제조용 포토리소그라피 설비 제어시스템 및 그제어방법
JP2006313815A (ja) * 2005-05-09 2006-11-16 Nikon Corp 結像性能シミュレーション方法及び装置、並びに露光方法及び装置
JP4336671B2 (ja) 2005-07-15 2009-09-30 キヤノン株式会社 露光パラメータの決定をコンピュータに実行させるプログラム、露光パラメータを決定する決定方法、露光方法及びデバイス製造方法。
JP4793683B2 (ja) * 2006-01-23 2011-10-12 株式会社ニコン 算出方法、調整方法及び露光方法、並びに像形成状態調整システム及び露光装置
WO2007086511A1 (ja) * 2006-01-30 2007-08-02 Nikon Corporation 処理条件決定方法及び装置、表示方法及び装置、処理装置、測定装置及び露光装置、基板処理システム、並びにプログラム及び情報記録媒体
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EP1906251A1 (en) * 2006-09-26 2008-04-02 Carl Zeiss SMT AG Projection exposure method and projection exposure system
JP4989279B2 (ja) 2007-04-05 2012-08-01 株式会社東芝 パラメータ値調整方法、半導体装置製造方法およびプログラム
JP2009164296A (ja) * 2007-12-28 2009-07-23 Canon Inc 露光装置およびデバイス製造方法
NL2003118A1 (nl) * 2008-07-14 2010-01-18 Asml Netherlands Bv Alignment system, lithographic system and method.
DE102008042356A1 (de) 2008-09-25 2010-04-08 Carl Zeiss Smt Ag Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
EP2207064A1 (en) * 2009-01-09 2010-07-14 Takumi Technology Corporation Method of selecting a set of illumination conditions of a lithographic apparatus for optimizing an integrated circuit physical layout
JP5570774B2 (ja) * 2009-08-04 2014-08-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および方法
US20130124141A1 (en) * 2010-02-25 2013-05-16 Nova Measuring Instruments Ltd. Method and system for measuring in patterned structures
US8710468B2 (en) * 2010-09-17 2014-04-29 Nippon Control System Corporation Method of and apparatus for evaluating an optimal irradiation amount of an electron beam for drawing a pattern onto a sample
JP5728259B2 (ja) * 2011-03-10 2015-06-03 キヤノン株式会社 プログラム及び決定方法
JP5835968B2 (ja) * 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
DE102012205096B3 (de) * 2012-03-29 2013-08-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Manipulator
NL2011276A (en) * 2012-09-06 2014-03-10 Asml Netherlands Bv Inspection method and apparatus and lithographic processing cell.
USD759603S1 (en) 2013-07-17 2016-06-21 Nuflare Technology, Inc. Chamber of charged particle beam drawing apparatus
DE102013219986A1 (de) * 2013-10-02 2015-04-02 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie
JP6111980B2 (ja) * 2013-10-29 2017-04-12 株式会社安川電機 産業機器管理システム、産業機器管理サーバ、産業機器管理方法、プログラム、及び情報記憶媒体
US9262578B2 (en) 2014-04-25 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit manufacturing
CN104198164B (zh) * 2014-09-19 2017-02-15 中国科学院光电技术研究所 一种基于哈特曼波前检测原理的检焦方法
JP6521223B2 (ja) * 2015-02-25 2019-05-29 株式会社ニコン リソグラフィ装置の管理方法及び装置、並びに露光方法及びシステム
TWI694304B (zh) * 2015-06-08 2020-05-21 日商Ａｇｃ股份有限公司 Ｅｕｖ微影術用反射型光罩基底
JP6554141B2 (ja) * 2017-05-26 2019-07-31 キヤノン株式会社 決定方法、露光方法、情報処理装置、プログラム及び物品の製造方法
JP2019028171A (ja) * 2017-07-27 2019-02-21 Hoya株式会社 フォトマスクの検査方法、フォトマスクの製造方法、及びフォトマスク検査装置
US10747128B2 (en) * 2017-11-15 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Exposure method and exposure apparatus
US11422472B2 (en) 2017-12-22 2022-08-23 Asml Netherlands B.V. Patterning process improvement involving optical aberration
TWI814668B (zh) * 2021-12-31 2023-09-01 南韓商細美事有限公司 用於處理基板之設備及用於處理基板之方法

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KR100877708B1 (ko) * 2001-03-29 2009-01-07 다이니폰 인사츠 가부시키가이샤 패턴 형성체의 제조 방법 및 그것에 사용하는 포토마스크
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI659260B (zh) * 2014-12-19 2019-05-11 日商Ｈｏｙａ股份有限公司 空白遮罩用基板、空白遮罩及其等之製造方法、轉印用遮罩之製造方法以及半導體元件之製造方法
CN112368706A (zh) * 2018-07-10 2021-02-12 索尼公司 信息处理装置、信息处理方法和程序
TWI771946B (zh) * 2020-03-31 2022-07-21 日商日立全球先端科技股份有限公司 帶電粒子線裝置

Also Published As

Publication number Publication date
US20060068301A1 (en) 2006-03-30
JPWO2004099874A1 (ja) 2006-07-13
WO2004099874A1 (ja) 2004-11-18
KR20050121728A (ko) 2005-12-27
TWI234195B (en) 2005-06-11

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