TW200505614A - Machining method and manufacturing method of semiconductor device - Google Patents

Machining method and manufacturing method of semiconductor device

Info

Publication number
TW200505614A
TW200505614A TW093123507A TW93123507A TW200505614A TW 200505614 A TW200505614 A TW 200505614A TW 093123507 A TW093123507 A TW 093123507A TW 93123507 A TW93123507 A TW 93123507A TW 200505614 A TW200505614 A TW 200505614A
Authority
TW
Taiwan
Prior art keywords
machining
protective film
film
manufacturing
semiconductor device
Prior art date
Application number
TW093123507A
Other languages
English (en)
Other versions
TWI291392B (en
Inventor
Tomoyuki Takeishi
Kenji Kawano
Hiroshi Ikegami
Shinichi Ito
Masami Watase
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200505614A publication Critical patent/TW200505614A/zh
Application granted granted Critical
Publication of TWI291392B publication Critical patent/TWI291392B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
TW093123507A 2003-08-13 2004-08-05 Machining method and manufacturing method of semiconductor device TWI291392B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003292973A JP2005059064A (ja) 2003-08-13 2003-08-13 加工方法及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200505614A true TW200505614A (en) 2005-02-16
TWI291392B TWI291392B (en) 2007-12-21

Family

ID=34370113

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093123507A TWI291392B (en) 2003-08-13 2004-08-05 Machining method and manufacturing method of semiconductor device

Country Status (5)

Country Link
US (1) US20050069815A1 (zh)
JP (1) JP2005059064A (zh)
KR (1) KR100624592B1 (zh)
CN (3) CN100338731C (zh)
TW (1) TWI291392B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007299947A (ja) * 2006-04-28 2007-11-15 Toshiba Corp 半導体装置の製造方法
CN1870234B (zh) * 2006-06-15 2011-07-20 友达光电股份有限公司 薄膜晶体管的制作方法
JP2008085118A (ja) 2006-09-28 2008-04-10 Toshiba Corp 半導体装置の製造方法
CN102837369B (zh) * 2012-09-18 2015-06-03 广东工业大学 一种绿激光划片蓝宝石的工艺方法
JP2014216377A (ja) * 2013-04-23 2014-11-17 イビデン株式会社 電子部品とその製造方法及び多層プリント配線板の製造方法
US9779932B2 (en) * 2015-12-11 2017-10-03 Suss Microtec Photonic Systems Inc. Sacrificial layer for post-laser debris removal systems
KR102178118B1 (ko) 2017-09-25 2020-11-13 주식회사 엘지화학 액정 배향용 필름의 제조방법
CN111761954A (zh) * 2020-07-29 2020-10-13 东莞通华液晶有限公司 一种lcd玻璃板的油墨网印工艺
CN117817135A (zh) * 2024-03-05 2024-04-05 鑫业诚智能装备(无锡)有限公司 一种激光自动标刻装置及标刻方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2599513B2 (ja) * 1990-06-25 1997-04-09 インターナショナル・ビジネス・マシーンズ・コーポレイション アブレーション・マスク
DE69306600T2 (de) * 1992-01-17 1997-04-17 Fujitsu Ltd Verfahren zur Herstellung eines mehrschichtigen Leitersubstrats
JPH08255795A (ja) * 1995-03-15 1996-10-01 Sony Corp 半導体製造方法および装置
US6232417B1 (en) * 1996-03-07 2001-05-15 The B. F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
US6231917B1 (en) * 1998-06-19 2001-05-15 Kabushiki Kaisha Toshiba Method of forming liquid film
JP2000164565A (ja) * 1998-11-26 2000-06-16 Sony Corp 半導体製造装置
KR100465864B1 (ko) * 1999-03-15 2005-01-24 주식회사 하이닉스반도체 유기 난반사방지 중합체 및 그의 제조방법
US6294460B1 (en) * 2000-05-31 2001-09-25 Advanced Micro Devices, Inc. Semiconductor manufacturing method using a high extinction coefficient dielectric photomask
CN1286146C (zh) * 2001-03-09 2006-11-22 株式会社东芝 电子装置的制造系统
JP3854889B2 (ja) * 2001-04-19 2006-12-06 キヤノン株式会社 金属または金属化合物パターンの製造方法および電子源の製造方法
JP2003151924A (ja) * 2001-08-28 2003-05-23 Tokyo Seimitsu Co Ltd ダイシング方法およびダイシング装置
US7074358B2 (en) * 2001-12-13 2006-07-11 Alexander Sergeievich Gybin Polymer casting method and apparatus
AU2002347164A1 (en) * 2001-12-21 2003-07-15 Ifire Technology Inc. Method of laser ablation for patterning thin film layers for electroluminescent displays
US7288466B2 (en) * 2002-05-14 2007-10-30 Kabushiki Kaisha Toshiba Processing method, manufacturing method of semiconductor device, and processing apparatus
JP2004322168A (ja) * 2003-04-25 2004-11-18 Disco Abrasive Syst Ltd レーザー加工装置

Also Published As

Publication number Publication date
KR20050019047A (ko) 2005-02-28
CN1963995A (zh) 2007-05-16
JP2005059064A (ja) 2005-03-10
CN1963994A (zh) 2007-05-16
US20050069815A1 (en) 2005-03-31
TWI291392B (en) 2007-12-21
CN1581432A (zh) 2005-02-16
CN100338731C (zh) 2007-09-19
KR100624592B1 (ko) 2006-09-20

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MM4A Annulment or lapse of patent due to non-payment of fees