TW200505296A - A high density plasma reactor - Google Patents

A high density plasma reactor

Info

Publication number
TW200505296A
TW200505296A TW093114547A TW93114547A TW200505296A TW 200505296 A TW200505296 A TW 200505296A TW 093114547 A TW093114547 A TW 093114547A TW 93114547 A TW93114547 A TW 93114547A TW 200505296 A TW200505296 A TW 200505296A
Authority
TW
Taiwan
Prior art keywords
plasma
high density
hand
source
plasma source
Prior art date
Application number
TW093114547A
Other languages
English (en)
Other versions
TWI383711B (zh
Inventor
Eric Chevalier
Philippe Guittienne
Original Assignee
Helyssen Sarl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Helyssen Sarl filed Critical Helyssen Sarl
Publication of TW200505296A publication Critical patent/TW200505296A/zh
Application granted granted Critical
Publication of TWI383711B publication Critical patent/TWI383711B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Sealing Material Composition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
TW093114547A 2003-05-22 2004-05-21 高密度電漿反應器 TWI383711B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03405360A EP1480250A1 (en) 2003-05-22 2003-05-22 A high density plasma reactor and RF-antenna therefor

Publications (2)

Publication Number Publication Date
TW200505296A true TW200505296A (en) 2005-02-01
TWI383711B TWI383711B (zh) 2013-01-21

Family

ID=33041145

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093114547A TWI383711B (zh) 2003-05-22 2004-05-21 高密度電漿反應器

Country Status (9)

Country Link
US (1) US8974629B2 (zh)
EP (2) EP1480250A1 (zh)
JP (1) JP2007511867A (zh)
KR (1) KR20060040588A (zh)
CN (1) CN1809911B (zh)
AT (1) ATE422097T1 (zh)
DE (1) DE602004019281D1 (zh)
TW (1) TWI383711B (zh)
WO (1) WO2004105078A2 (zh)

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EP1605493A1 (en) * 2004-06-07 2005-12-14 HELYSSEN S.à.r.l. Plasma processing control
GB0501460D0 (en) * 2005-01-25 2005-03-02 Univ Edinburgh Improved plasma cleaning method
KR100847007B1 (ko) * 2007-05-31 2008-07-17 세메스 주식회사 플라즈마를 이용한 기판 처리 장치 및 방법
JP2011504404A (ja) * 2007-11-21 2011-02-10 ユニバーシティ オブ フロリダ リサーチ ファウンデーション，インク． プラズマ場を使用する自己滅菌装置
JP2011514441A (ja) * 2008-01-30 2011-05-06 アプライド マテリアルズ インコーポレイテッド 表面波開始プラズマ放電源の予備イオン化のためのシステム及び方法
JP2010090434A (ja) * 2008-10-08 2010-04-22 Renesas Technology Corp 半導体集積回路装置の製造方法および半導体集積回路装置の製造装置
JP5506826B2 (ja) * 2009-02-10 2014-05-28 ヘリッセン，サール 大面積プラズマ処理装置
ITMI20092107A1 (it) * 2009-11-30 2011-06-01 Milano Politecnico Metodo e apparato per la deposizione di strati sottili nanostrutturati con morfologia e nanostruttura controllata
KR20120004040A (ko) * 2010-07-06 2012-01-12 삼성전자주식회사 플라즈마 발생장치
US20140202131A1 (en) * 2011-05-12 2014-07-24 Roderick William Boswell Plasma micro-thruster
KR20160016917A (ko) * 2013-05-31 2016-02-15 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 프로세싱 시스템들을 위한 안테나 어레이 구성들
JP2015193863A (ja) * 2014-03-31 2015-11-05 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置
JP6318447B2 (ja) * 2014-05-23 2018-05-09 三菱重工業株式会社 プラズマ加速装置及びプラズマ加速方法
US10017857B2 (en) * 2015-05-02 2018-07-10 Applied Materials, Inc. Method and apparatus for controlling plasma near the edge of a substrate
BR112017028386B1 (pt) 2015-07-03 2021-12-28 Tetra Laval Holdings & Finance S.A. Método para fabricação de uma película ou trama de barreira, material de acondicionamento laminado, e, recipiente de acondicionamento
US20170316921A1 (en) * 2016-04-29 2017-11-02 Retro-Semi Technologies, Llc Vhf z-coil plasma source
US10877114B2 (en) * 2016-10-10 2020-12-29 Koninklijke Philips N.V. Co-planar RF coil feeding
JP2018113522A (ja) * 2017-01-10 2018-07-19 株式会社リコー アンテナ装置、通信装置、及びアンテナ装置の製造方法
US11551909B2 (en) * 2017-10-02 2023-01-10 Tokyo Electron Limited Ultra-localized and plasma uniformity control in a plasma processing system
CN109586716A (zh) * 2018-11-30 2019-04-05 新奥科技发展有限公司 相位分频器和射频电源系统
DE102019111908B4 (de) * 2019-05-08 2021-08-12 Dreebit Gmbh ECR-Ionenquelle und Verfahren zum Betreiben einer ECR-Ionenquelle
CN112133165B (zh) * 2020-10-15 2024-06-25 大连理工大学 一种直线等离子体实验装置
CN113285223B (zh) * 2021-05-24 2023-10-10 中国科学院合肥物质科学研究院 一种分立式π/2相位差离子回旋共振加热天线

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Also Published As

Publication number Publication date
US8974629B2 (en) 2015-03-10
DE602004019281D1 (de) 2009-03-19
KR20060040588A (ko) 2006-05-10
WO2004105078A3 (en) 2005-05-12
CN1809911A (zh) 2006-07-26
JP2007511867A (ja) 2007-05-10
US20070056515A1 (en) 2007-03-15
EP1627413B1 (en) 2009-01-28
WO2004105078A2 (en) 2004-12-02
CN1809911B (zh) 2011-06-15
ATE422097T1 (de) 2009-02-15
EP1480250A1 (en) 2004-11-24
TWI383711B (zh) 2013-01-21
EP1627413A2 (en) 2006-02-22

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