TW200504855A - Method to passivate conductive surfaces during semiconductor processing - Google Patents

Method to passivate conductive surfaces during semiconductor processing

Info

Publication number
TW200504855A
TW200504855A TW093112992A TW93112992A TW200504855A TW 200504855 A TW200504855 A TW 200504855A TW 093112992 A TW093112992 A TW 093112992A TW 93112992 A TW93112992 A TW 93112992A TW 200504855 A TW200504855 A TW 200504855A
Authority
TW
Taiwan
Prior art keywords
solution
surfactant
approximately
semiconductor processing
less
Prior art date
Application number
TW093112992A
Other languages
English (en)
Chinese (zh)
Inventor
John C Flake
Kevin E Cooper
Saifi Usmani
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200504855A publication Critical patent/TW200504855A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/38—Products with no well-defined composition, e.g. natural products
    • C11D3/382—Vegetable products, e.g. soya meal, wood flour, sawdust
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
    • C11D1/14—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aliphatic hydrocarbons or mono-alcohols
    • C11D1/146—Sulfuric acid esters
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/34—Derivatives of acids of phosphorus
    • C11D1/345—Phosphates or phosphites
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/72—Ethers of polyoxyalkylene glycols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093112992A 2003-05-07 2004-05-07 Method to passivate conductive surfaces during semiconductor processing TW200504855A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/431,053 US7188630B2 (en) 2003-05-07 2003-05-07 Method to passivate conductive surfaces during semiconductor processing

Publications (1)

Publication Number Publication Date
TW200504855A true TW200504855A (en) 2005-02-01

Family

ID=33416375

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093112992A TW200504855A (en) 2003-05-07 2004-05-07 Method to passivate conductive surfaces during semiconductor processing

Country Status (7)

Country Link
US (2) US7188630B2 (enExample)
EP (1) EP1625247A2 (enExample)
JP (1) JP2007511894A (enExample)
KR (1) KR101059006B1 (enExample)
CN (1) CN1784513A (enExample)
TW (1) TW200504855A (enExample)
WO (1) WO2004102620A2 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2194570A1 (en) * 1998-12-28 2010-06-09 Hitachi Chemical Co., Ltd. Materials for polishing liquid for metal, polishing liquid for metal, mehtod for preparation thereof and polishing method using the same
US7387970B2 (en) * 2003-05-07 2008-06-17 Freescale Semiconductor, Inc. Method of using an aqueous solution and composition thereof
US7188630B2 (en) * 2003-05-07 2007-03-13 Freescale Semiconductor, Inc. Method to passivate conductive surfaces during semiconductor processing
US20080207005A1 (en) * 2005-02-15 2008-08-28 Freescale Semiconductor, Inc. Wafer Cleaning After Via-Etching
WO2006125461A1 (en) * 2005-05-25 2006-11-30 Freescale Semiconductor, Inc Treatment solution and method of applying a passivating layer
WO2006125462A1 (en) * 2005-05-25 2006-11-30 Freescale Semiconductor, Inc Cleaning solution for a semiconductor wafer
US20090045164A1 (en) * 2006-02-03 2009-02-19 Freescale Semiconductor, Inc. "universal" barrier cmp slurry for use with low dielectric constant interlayer dielectrics
EP1984467B1 (en) * 2006-02-03 2012-03-21 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
WO2007095972A1 (en) * 2006-02-24 2007-08-30 Freescale Semiconductor, Inc. Semiconductordevice including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprissing multiple organic components for use in a semiconductor device
WO2007095973A1 (en) * 2006-02-24 2007-08-30 Freescale Semiconductor, Inc. Integrated system for semiconductor substrate processing using liquid phase metal deposition
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
US7690968B2 (en) * 2006-08-30 2010-04-06 Saint-Gobain Ceramics & Plastics, Inc. Aqueous fluid compositions for abrasive slurries, methods of production, and methods of use thereof
WO2008029334A1 (en) * 2006-09-04 2008-03-13 Nxp B.V. Fabrication of self-assembled nanowire-type interconnects on a semiconductor device
KR101202720B1 (ko) * 2008-02-29 2012-11-19 주식회사 엘지화학 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법
JP2009238896A (ja) * 2008-03-26 2009-10-15 Renesas Technology Corp 半導体集積回路装置の製造方法
US8580656B2 (en) * 2008-07-14 2013-11-12 Air Products And Chemicals, Inc. Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful therefor
US20100215841A1 (en) 2009-02-20 2010-08-26 E.I. Du Pont De Nemours And Company Process for inhibiting oxide formation on copper surfaces
US8088690B2 (en) * 2009-03-31 2012-01-03 International Business Machines Corporation CMP method
WO2010123300A2 (en) * 2009-04-22 2010-10-28 Lg Chem, Ltd. Slurry for chemical mechanical polishing
US20110045203A1 (en) * 2009-08-21 2011-02-24 E. I. Du Pont De Nemours And Company Process for inhibiting oxide formation on copper surfaces
US20110117696A1 (en) * 2009-11-19 2011-05-19 Air Liquide Electronics U.S. Lp CdTe SURFACE TREATMENT FOR STABLE BACK CONTACTS
CN102110641A (zh) * 2009-12-29 2011-06-29 中芯国际集成电路制造(上海)有限公司 在化学机械研磨过程中防止钨塞凹陷缺陷的方法
US8883701B2 (en) 2010-07-09 2014-11-11 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
KR20130084932A (ko) * 2012-01-18 2013-07-26 삼성전자주식회사 반도체 소자의 제조 방법
US9481855B2 (en) * 2012-09-17 2016-11-01 Ekc Technology Inc Cleaning composition and method for cleaning a semiconductor device substrate after chemical mechanical polishing
US8920567B2 (en) 2013-03-06 2014-12-30 International Business Machines Corporation Post metal chemical-mechanical planarization cleaning process
US10043678B2 (en) 2013-10-23 2018-08-07 Dongjin Semichem Co., Ltd. Metal film polishing slurry composition, and method for reducing scratches generated when polishing metal film by using same
US9971073B2 (en) 2014-04-14 2018-05-15 Corning Incorporated Enhanced performance metallic based optical mirror substrates
US9666447B2 (en) 2014-10-28 2017-05-30 Tokyo Electron Limited Method for selectivity enhancement during dry plasma etching
CN108250977B (zh) * 2016-12-28 2021-08-27 安集微电子科技（上海）股份有限公司 一种用于阻挡层平坦化的化学机械抛光液
US10181408B2 (en) * 2017-01-31 2019-01-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives
CN111863592B (zh) * 2019-04-29 2023-11-10 中芯国际集成电路制造(上海)有限公司 研磨后清洗方法以及半导体结构的形成方法
CN110965115A (zh) * 2020-01-02 2020-04-07 荆门德威格林美钨资源循环利用有限公司 一种钛合金表面氧化层的去除方法
CN112246747B (zh) * 2020-09-30 2021-09-17 青岛金汇源电子有限公司 一种连续式半导体晶圆蚀刻设备

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW416987B (en) * 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
US6001730A (en) * 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
US6153043A (en) * 1998-02-06 2000-11-28 International Business Machines Corporation Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing
TW476777B (en) * 1998-08-31 2002-02-21 Hitachi Chemical Co Ltd Abrasive liquid for metal and method for polishing
US6074949A (en) * 1998-11-25 2000-06-13 Advanced Micro Devices, Inc. Method of preventing copper dendrite formation and growth
US6274478B1 (en) * 1999-07-13 2001-08-14 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
US6383928B1 (en) * 1999-09-02 2002-05-07 Texas Instruments Incorporated Post copper CMP clean
US6503418B2 (en) 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
US6720264B2 (en) 1999-11-04 2004-04-13 Advanced Micro Devices, Inc. Prevention of precipitation defects on copper interconnects during CMP by use of solutions containing organic compounds with silica adsorption and copper corrosion inhibiting properties
US6468910B1 (en) 1999-12-08 2002-10-22 Ramanathan Srinivasan Slurry for chemical mechanical polishing silicon dioxide
US6491843B1 (en) 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
WO2001081525A1 (en) 2000-04-26 2001-11-01 Daikin Industries, Ltd. Detergent composition
JP2002020787A (ja) * 2000-07-05 2002-01-23 Wako Pure Chem Ind Ltd 銅配線半導体基板洗浄剤
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
KR100798437B1 (ko) * 2000-12-04 2008-01-28 가부시키가이샤 에바라 세이사꾸쇼 기판처리방법
US6821881B2 (en) * 2001-07-25 2004-11-23 Applied Materials, Inc. Method for chemical mechanical polishing of semiconductor substrates
US6812193B2 (en) * 2001-08-31 2004-11-02 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
JP4057803B2 (ja) * 2001-09-11 2008-03-05 株式会社東芝 半導体装置の製造方法
US6660638B1 (en) * 2002-01-03 2003-12-09 Taiwan Semiconductor Manufacturing Company CMP process leaving no residual oxide layer or slurry particles
WO2003091376A1 (en) * 2002-04-24 2003-11-06 Ekc Technology, Inc. Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces
US7188630B2 (en) * 2003-05-07 2007-03-13 Freescale Semiconductor, Inc. Method to passivate conductive surfaces during semiconductor processing

Also Published As

Publication number Publication date
US20040224521A1 (en) 2004-11-11
US7188630B2 (en) 2007-03-13
WO2004102620A2 (en) 2004-11-25
KR101059006B1 (ko) 2011-08-23
EP1625247A2 (en) 2006-02-15
JP2007511894A (ja) 2007-05-10
WO2004102620A3 (en) 2005-04-07
US20080038994A1 (en) 2008-02-14
WO2004102620B1 (en) 2005-05-19
CN1784513A (zh) 2006-06-07
KR20050120816A (ko) 2005-12-23
US7579279B2 (en) 2009-08-25

Similar Documents

Publication Publication Date Title
TW200504855A (en) Method to passivate conductive surfaces during semiconductor processing
Ein-Eli et al. Review on copper chemical–mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective
KR101625698B1 (ko) 알루미늄 산화피막용 제거액 및 알루미늄 또는 알루미늄합금의 표면처리방법
MY133080A (en) Post-lapping cleaning process for silicon wafers
KR20030007969A (ko) 세정제 조성물
CN1607268A (zh) 铜的各向同性蚀刻方法
RU2007123850A (ru) Способ многоэтапного электролитно-плазменного полирования изделий из титана и титановых сплавов
JP2009013417A (ja) 化学機械平坦化（ｃｍｐ）後の洗浄組成物
CN103449731A (zh) 一种提升熔石英光学元件损伤阈值的方法
DE602005014094D1 (de) Verbesserte saure chemie für säuberung nach cmp
US20030010353A1 (en) Ultrasonic cleaning method for semiconductor manufacturing equipment
CN1303518A (zh) 腐蚀后碱处理方法
US5980643A (en) Alkaline water-based solution for cleaning metallized microelectronic
EP1003615A1 (en) Method for passivation of a metallization layer
JP2001148385A (ja) 半導体ウェハおよび半導体装置の製造方法
TW200509241A (en) Method for fabricating semiconductor device
CN109713086B (zh) 一种非金属黑硅制绒液以及利用该制绒液进行制绒的方法
TW200505614A (en) Machining method and manufacturing method of semiconductor device
US7674725B2 (en) Treatment solution and method of applying a passivating layer
US20110189855A1 (en) METHOD FOR CLEANING SURFACE CONTAINING Cu
TW200511425A (en) Micellar technology for post-etch residues
US20020175143A1 (en) Processes for polishing wafers
TW424002B (en) A cleaning method after finishing polishing process of Cu interconnection
TW200725724A (en) Surface grinding method of semiconductor wafer and making method thereof
EP1198620A1 (en) Methods for wet processing electronic components having copper containing surfaces