TW200501244A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof

Info

Publication number
TW200501244A
TW200501244A TW092116858A TW92116858A TW200501244A TW 200501244 A TW200501244 A TW 200501244A TW 092116858 A TW092116858 A TW 092116858A TW 92116858 A TW92116858 A TW 92116858A TW 200501244 A TW200501244 A TW 200501244A
Authority
TW
Taiwan
Prior art keywords
manufacturing
semiconductor device
drift region
concentration region
region
Prior art date
Application number
TW092116858A
Other languages
English (en)
Other versions
TWI234196B (en
Inventor
Masaru Kariyama
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200501244A publication Critical patent/TW200501244A/zh
Application granted granted Critical
Publication of TWI234196B publication Critical patent/TWI234196B/zh

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW92116858A 2001-12-21 2003-06-20 Semiconductor device and manufacturing method for the same TWI234196B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001390340A JP2003197629A (ja) 2001-12-21 2001-12-21 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200501244A true TW200501244A (en) 2005-01-01
TWI234196B TWI234196B (en) 2005-06-11

Family

ID=27598303

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92116858A TWI234196B (en) 2001-12-21 2003-06-20 Semiconductor device and manufacturing method for the same

Country Status (2)

Country Link
JP (1) JP2003197629A (zh)
TW (1) TWI234196B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200733386A (en) * 2005-11-29 2007-09-01 Sharp Kk Semiconductor device
JP5487851B2 (ja) * 2008-09-30 2014-05-14 サンケン電気株式会社 半導体装置

Also Published As

Publication number Publication date
TWI234196B (en) 2005-06-11
JP2003197629A (ja) 2003-07-11

Similar Documents

Publication Publication Date Title
GB2440861A (en) Method for fabricating SOI device
CN101262010B (zh) 金属氧化物半导体晶体管及高压金属氧化物半导体晶体管
WO2008027027A3 (en) Transistor with fluorine treatment
EP1487023A3 (en) Semiconductor device comprising a MIS transistor and method for manufacturing the same
EP1239522A3 (en) Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure and method of manufacturing the same
KR101520951B1 (ko) 자기 정렬된 수직 ldd 및 후면 드레인을 가지는 ldmos
CN101232018B (zh) 半导体结构及半导体芯片
CN102737966B (zh) 调整栅极功函数的方法与具有金属栅极的晶体管
TW357386B (en) Insulating gate-type semiconductor and the manufacturing method
TW200616226A (en) Semiconductor device and manufacturing method for the same
JP2007053257A (ja) 半導体装置及びその製造方法
TW200721450A (en) Semiconductor device and manufacturing method thereof
TW362289B (en) Manufacturing method of metal oxide semiconductor field effect transistor
TW200501244A (en) Semiconductor device and manufacturing method thereof
TW200504930A (en) Method for fabricating merged logic CMOS device
EP0884773A3 (en) Method of making an MIS transistor
US6800529B2 (en) Method for fabricating semiconductor transistor device
TW370719B (en) Manufacturing method of anti-electrostatic discharge element
MY135284A (en) Semiconductor device and manufacturing method for the same
TW200701299A (en) Semiconductor device and method for manufacturing the same
CN102543744B (zh) 晶体管及其制作方法
KR950021786A (ko) 모스펫(mosfet) 및 그 제조방법
CN202633240U (zh) 晶体管
CN111599861A (zh) 半导体结构及其制造方法
WO2003038904A3 (en) Field effect transistor on insulating layer and manufacturing method

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees