TW200419786A - Flash memory cell and fabrication thereof - Google Patents
Flash memory cell and fabrication thereofInfo
- Publication number
- TW200419786A TW200419786A TW092106739A TW92106739A TW200419786A TW 200419786 A TW200419786 A TW 200419786A TW 092106739 A TW092106739 A TW 092106739A TW 92106739 A TW92106739 A TW 92106739A TW 200419786 A TW200419786 A TW 200419786A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- disposed
- memory cell
- flash memory
- tunnel oxide
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW092106739A TWI220788B (en) | 2003-03-26 | 2003-03-26 | Flash memory cell and fabrication thereof |
US10/250,038 US6906377B2 (en) | 2003-03-26 | 2003-05-30 | Flash memory cell and fabrication thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW092106739A TWI220788B (en) | 2003-03-26 | 2003-03-26 | Flash memory cell and fabrication thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI220788B TWI220788B (en) | 2004-09-01 |
TW200419786A true TW200419786A (en) | 2004-10-01 |
Family
ID=32986205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092106739A TWI220788B (en) | 2003-03-26 | 2003-03-26 | Flash memory cell and fabrication thereof |
Country Status (2)
Country | Link |
---|---|
US (1) | US6906377B2 (zh) |
TW (1) | TWI220788B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100645067B1 (ko) * | 2005-07-04 | 2006-11-10 | 삼성전자주식회사 | 플로팅 게이트를 갖는 비휘발성 기억 소자 및 그 형성 방법 |
KR100655435B1 (ko) * | 2005-08-04 | 2006-12-08 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그 제조 방법 |
US7541240B2 (en) * | 2005-10-18 | 2009-06-02 | Sandisk Corporation | Integration process flow for flash devices with low gap fill aspect ratio |
KR100669346B1 (ko) * | 2005-11-11 | 2007-01-16 | 삼성전자주식회사 | 플로팅 게이트를 갖는 비휘발성 기억 소자 및 그 형성 방법 |
KR100870339B1 (ko) * | 2006-06-29 | 2008-11-25 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 제조방법 |
US7955935B2 (en) * | 2006-08-03 | 2011-06-07 | Micron Technology, Inc. | Non-volatile memory cell devices and methods |
US7560769B2 (en) * | 2006-08-03 | 2009-07-14 | Micron Technology, Inc. | Non-volatile memory cell device and methods |
US8358524B1 (en) | 2007-06-29 | 2013-01-22 | Netlogic Microsystems, Inc. | Methods and circuits for limiting bit line leakage current in a content addressable memory (CAM) device |
TWI395290B (zh) * | 2009-05-26 | 2013-05-01 | Winbond Electronics Corp | 快閃記憶體及其製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5767005A (en) * | 1993-07-27 | 1998-06-16 | Micron Technology, Inc. | Method for fabricating a flash EEPROM |
JP2929944B2 (ja) * | 1994-09-09 | 1999-08-03 | 株式会社デンソー | 半導体装置の製造方法 |
JP3211759B2 (ja) * | 1997-12-17 | 2001-09-25 | 日本電気株式会社 | 不揮発性記憶装置の製造方法 |
US6124167A (en) * | 1999-08-06 | 2000-09-26 | Micron Technology, Inc. | Method for forming an etch mask during the manufacture of a semiconductor device |
US6248631B1 (en) * | 1999-10-08 | 2001-06-19 | Macronix International Co., Ltd. | Method for forming a v-shaped floating gate |
US6413818B1 (en) * | 1999-10-08 | 2002-07-02 | Macronix International Co., Ltd. | Method for forming a contoured floating gate cell |
US6762093B2 (en) * | 2002-08-21 | 2004-07-13 | Micron Technology, Inc. | High coupling floating gate transistor |
-
2003
- 2003-03-26 TW TW092106739A patent/TWI220788B/zh not_active IP Right Cessation
- 2003-05-30 US US10/250,038 patent/US6906377B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TWI220788B (en) | 2004-09-01 |
US20040191992A1 (en) | 2004-09-30 |
US6906377B2 (en) | 2005-06-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |