TW200418632A - Silicon plate, method for producing silicon plate, solar cell and substrate for producing silicon plate - Google Patents

Abstract

The invention provides a low-cost silicon plate which enhances the yield of silicon plate without conducting any slicing step. The silicon plate is formed on the surface of the substrate by dipping a substrate in a silicon molten solution. The silicon plate has one surface as a main surface, and another surfaces consecutively formed on the first surface. Said another surfaces have at least one surface, of which the normal vector is anti-parallel to or forms an obtuse angle with the normal vector of said first surface, and form an engaging shape with said substrate to prevent the silicon plate from dropping. Further, a low-cost solar cell is provided by means of applying said silicon plate to a solar cell.

Description

200418632 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a plate-shaped silicon, a method for manufacturing the plate-shaped silicon, a solar cell, and a plate-shaped silicon substrate. The present invention specifically refers to a plate-like fragment on the surface of a substrate immersed in a molten solution, and the plate-shaped silicon has: a first surface, which crystal grows on a main surface of the substrate; and at least one surface The other surface is continuous with the first surface and crystal grows on the side surface of the substrate. The normal vector of the other surface and the normal vector of the first surface are anti-parallel or at an obtuse angle, so that the first surface is opposite to the other surface. A fitting portion is formed between the substrate and the substrate to prevent the plate-shaped silicon from falling off the substrate during the process of manufacturing the plate-shaped silicon. Furthermore, the present invention also relates to a method for producing plate-shaped silicon, a solar cell using the plate-shaped silicon, and a substrate for producing plate-shaped silicon. [Previous technology] In the past, polycrystalline silicon was manufactured by injecting a silicon melt into a mold to learn about it. However, the polycrystalline silicon ingots were formed by cutting the polycrystalline silicon ingots. The problem of large silicon loss. The present inventors have developed a manufacturing method capable of mass-producing plate-shaped silicon at low cost without the need for a dicing process in order to eliminate the above-mentioned cutting damage at low cost and mass production of polycrystalline silicon wafers (Japanese Patent Laid-Open No. 2_247396) : This manufacturing method immerses a raw material melt on a substrate to grow plate-shaped silicon on the substrate. [Summary of the Invention] The # 征 from 月 之 板 心 夕 is a plate-like shape formed on the surface of the wire by immersing the substrate in the crushed and melted liquid ^, and the plate-like shape has a main face, a face, and The other side formed continuously on the first side; the other side contains at least one

87327.DOC 200418632 The normal vector of the surface is one of antiparallel or obtuse angles with the normal vector of the first surface, and the first surface and the other surfaces all form a joint with the substrate. It is preferable that the first surface and the other surfaces continuous with the first surface be substantially flat. In addition, the present invention is a method for manufacturing plate-shaped silicon, which is characterized in that after the surface of the substrate is immersed in a silicon melt, the substrate and the silicon melt are separated, so that a film-like plate-shaped silicon is grown on the surface of the substrate, whereby In the manufacturing method of forming the plate-shaped silicon, the substrate includes: a first surface of a substrate on which a first surface of the plate-shaped silicon is formed; and another surface of the substrate that is continuous with the first surface of the substrate and a plate-like shape is formed thereon. The other surfaces of the substrate include at least one surface whose normal vector is an antiparallel or obtuse angle with the normal vector of the first surface of the substrate. Here, it is preferable that a groove structure is formed on the edge portion of the substrate (the first surface of the substrate with at least two grooves parallel to the direction of immersion of the silicon melt). In addition, in the method for manufacturing plate-shaped silicon, the above The other surface of the plate-shaped silicon continuous with the first surface is preferably formed at the front end portion of the substrate in the advancing direction. Furthermore, the present invention is a solar cell, which is characterized by using the first surface of the plate-shaped stone evening. In addition, a substrate for manufacturing plate-shaped silicon according to the present invention is characterized by having: a first surface of a substrate on which a first surface of plate-shaped silicon is to be formed; and another surface of the substrate which is continuous with the first surface of the substrate and on which A plate-like silicon surface is formed, and at least one surface of the substrate includes a surface whose normal vector is antiparallel or obtuse with the normal vector of the first surface of the substrate. Here, the edge portion of the first surface of the substrate of the substrate Preferably, the groove structure is formed by having at least two grooves parallel to the immersion direction of the crushed and melted liquid. The groove structure is formed along the edge of the first surface of the substrate.

87327.DOC 200418632 It is better to form 3 grooves. ^ When the plate-shaped silicon is manufactured by the conventional plate-shaped silicon manufacturing method, the plate-shaped stone will fall into the following problems: ¾ inside and outside the steel. In the present invention, the shape of the substrate is such that the other surface of the soil plate contains less than one surface, and its normal vector is an antiparallel or obtuse angle surface with the normal direction of the first surface of the substrate. The substrate is formed with a fitting portion to prevent the plate-shaped silicon from falling off from the substrate during manufacturing. In addition, since the plate-shaped silicon will not only grow on the plate-shaped silicon growth surface of the substrate, but also on the front, back, and sides of the growth substrate, during the cooling process after the plate-shaped silicon is grown, the plate-shaped silicon and the growth substrate material The difference in the expansion coefficient between the two and the time difference in temperature change, so there may be residual stress in the plate-like silicon surface. However, by forming a protrusion on the substrate surface or using a trench structure, the above problems can be solved and Reduce the occurrence of cracks in plate-like silicon. [Embodiment] The present invention relates to plate-shaped silicon, a method for producing plate-shaped silicon, a solar cell using the plate-shaped silicon, and a substrate for producing plate-shaped silicon. (Slab-shaped silicon) It is invented that the plate-shaped silicon is formed on the surface of the substrate in order to immerse the substrate in a silicon melt, and the plate-shaped silicon has a first surface as a main surface and is formed continuously with the first surface. The other side includes at least one side, and at least one side, "The normal vector system is anti-parallel or obtuse with the normal vector of the first surface and the normal vectors of other surfaces, and the first and other surfaces form the above substrate. The fitting department. The following use figure! The characteristics of the plate-shaped silicon of the present invention will be described. The plate-shaped silicon S1 according to the present invention has an L-shaped section at its end, and is composed of a first surface 11A and a second surface 12A as the other surface.

87327.DOC 200418632 The surface 1 2A is continuously formed by bending at the boundary line 1 3A. Here, the angle formed by the normal vector V11 A on the first surface 1a and the normal vector VI 2A on the second surface 2A is an obtuse angle. In the present invention, the normal vectors V11A and V12A are used to define normal vectors on a continuous surface: that is, when defining a vector, if it is a surface connected to a substrate for manufacturing plate-shaped silicon, both vectors are formed by the phase with the substrate. Choose from the normals on the next face. In this way, the angles of the normal vectors V11A and V12A can be defined. The fact that the normal vectors of the present invention are antiparallel means that the two normal vectors are facing in opposite directions. In addition, the schematic planes of the present invention include those having plateau silicon irregularities on the flat silicon surface. For example, each plane may include small bumps, plate thickness errors, or zigzag. The small irregularities here include irregularities on the surface of the plate-like silicon of about 200, and regular irregularities. In addition, the warping includes warping up to about μm. In addition, the A character attached to the component symbol in FIG. 1 is used to indicate that the component symbol portion is a rough plane. In the present invention, the normal vector on the first surface and the normal vector on the second surface which is a continuous surface thereof are anti-parallel or obtuse. Here, the angle formed by the normal vector is 120 ° to 180 °. The following is better. In FIG. 1, the angle formed by the normal vector is the same as the angle α formed by the first surface and the second surface. Although the angle α is at 90 °. The above is less than 20. It can also achieve the desired purpose from time to time, however if it is set to 120. In the above case, it is possible to further increase the effect and increase the yield. In addition, in the case where the growth substrate is immersed in the melt to produce a plate-shaped stone, the angle α is 180. For the above surfaces, additional force will need to be applied in order to be able to remove the plate-shaped silicon from the substrate, which may cause problems such as damage to the plate-shaped silicon originally available, or damage to the growth substrate.

87327.DOC 200418632 In Figure 1, although the first surface 11A and the second surface 12A shown are both planes, they are not limited to the planes. The obtained plate-shaped silicon is partly 2 as a product. It may be a flat surface; that is, the flat planar portion of the plate-shaped silicon may be uneven or warped. In order to use the obtained plate-shaped silicon to manufacture a planar device such as a solar cell, the plate-shaped silicon is preferably a flat one. Next, Fig. 2 is a schematic perspective view of a plate-shaped silicon in another embodiment of the present invention. In FIG. 2, the plate-shaped silicon 32 has a cross-section at the end. The sub-type is composed of a first surface 21A and a second surface 22β as the other surface. The first surface 21A and the second surface 22B are The boundary line 23A is continuously formed by bending. In the figure, the normal vector V21A on the first surface 21A & the normal vector V22B on the second surface 22B forms a pure angle. Here, the normal vector ν21ΑΛν22B is used to define the normal vector on the continuous surface. On the plate-shaped silicon having the above-mentioned shape, when the defined position of the quantities V21A and V22B is the edge portion of the boundary line 23, the angle formed by the normal quantity sometimes becomes an acute angle. However, in the present invention, the angle formed by at least a part of the normal vector may be an obtuse angle or anti-parallel. That is, the part including the angle formed by the normal vector is allowed to be an acute angle. In other words, there may be other surfaces where the angle formed by the normal vector is an obtuse angle or anti-parallel ^. The B character attached to the element symbol in FIG. 2 indicates that the shape is a schematic plane. In FIGS. 1 and 2, the first and second sides of the plate-shaped silicon plate are continuous perspective views of the plate-shaped silicon when the first surface and the second surface are continuous and exist in two surfaces. However, in the plate-shaped silicon of the present invention, the number of other surfaces must be at least There are! Faces, and they can also be more than faces. In particular, in order to stably form a mating portion on a substrate to improve productivity, it is better to use a plurality of other surfaces. Fig. 3t 'The plate-shaped buckle of the present invention has a cross-sectional shape at the end.

87327.DOC -10, 200418632 Shao Fen 'has a first surface 31A, a boundary 33A, a second surface 32A, and a second plane 3 4 A formed continuously. One of the normal vectors corresponding to the three faces is V31A, V32A, and V34A, and the vector V31A on the first face is antiparallel to the vector V34A on the third plane: in other words, the normal vector on the continuous face is in the opposite direction . As described above, by forming the three-sided structure with the first surface 31A, the second surface 32A, and the third plane 34A, the above-mentioned portion forms a fitting portion with the substrate 'even if the substrate is immersed in the melt to produce a plate shape Shi Xi's sentiment can also greatly increase production capacity. Here, the other surfaces are composed of the second surface 32A and the third surface 34A. (Substrate) Next, a substrate used for manufacturing the above-mentioned plate-shaped silicon will be described. The plate-shaped silicon S1 to S3 shown in Figs. 1 to 3 can be manufactured using the substrates C4 to C6 shown in Figs. 4, 5, and 6, respectively. That is, the plate-shaped silicon S1 of FIG. 1 can be easily manufactured with the substrate C4 of FIG. 4A. 4A and 4B are schematic perspective views of the substrate viewed from different angles, respectively. The first surface 11A of the plate-shaped silicon in FIG. 1 is grown on the first surface 45A of the substrate C4, and the second surface 12A is grown on the second surface 46A of the substrate formed by the boundary 47A. Similarly, the first surface 21A of the plate-shaped silicon S2 of FIG. 2 is grown from the first surface 5 5A of the substrate C5 of FIG. 5, and the second surface 22B is from the second surface 5 6B of the substrate constituting the other surface of the substrate. Grow. In addition, the first surface 31A of the plate-shaped silicon S3 of FIG. 3 is grown from the first surface 65A of the substrate C6 of FIG. 6, the second surface 32A is grown from the second surface 66A constituting the substrate, and the third surface 34A It is grown from the third surface 68A of the substrate. As described above, the plate-shaped silicon obtained by changing the shape of the substrate will form a fitting portion with a different shape to prevent the plate-shaped silicon.

87327.DOC -11-200418632 Dropped to help increase productivity. In the present invention, the shape of the plate-shaped silicon and the substrate for manufacturing the plate-shaped silicon do not need to correspond to each other; if the shapes completely correspond, the plate-shaped silicon and the substrate will be in close contact, so it will be difficult to use the obtained plate. Silicon-like silicon to make devices such as solar cells. On the other hand, the situation of the substrate is the same as described above. A substrate for manufacturing a plate-shaped silicon having a first surface of the substrate and a substrate formed on the other surface of the substrate continuously with the first surface of the substrate is characterized in that the other surface of the substrate includes at least one surface whose normal vector is opposite to the first surface normal vector. Parallel or obtuse faces. In other words, among the substrates for manufacturing plate-shaped silicon in which at least the first surface and the other surface are continuously formed, the normal vector on the first surface of the substrate having the above-mentioned plate-shaped silicon growth and the other surface growth (normal vectors of the substrate) Anti-parallel or obtuse angles: That is, in the plate-shaped silicon manufacturing substrate of the present invention, although the other surface of the substrate is composed of a plurality of surfaces', at least one of the plurality of surfaces has a normal vector system and the above-mentioned The normal vector of the first surface of the substrate is obtuse or anti-parallel. Figure 7A shows a schematic perspective view of the substrate of the present invention. In the figure, the normal vector V78A of the first surface 75A of the substrate and the normal vector v76A of the second surface 76A of the substrate. In terms of the normal vector V78A of the third surface 78A of the substrate, the normal vectors V75A and V78A form an obtuse angle; on the other hand, although the angle formed by the normal vectors V75A and V76A is an acute angle, but among the multiple normal vectors constituting the other surface of the substrate, As long as it includes an anti-parallel or obtuse surface. Figure 7b $, the angle γ7A formed by the first surface 75A of the substrate and the second surface 76A of the substrate is an obtuse angle, formed by the second surface 76A of the substrate and the third surface 78α of the substrate Angle γ7B is Angle. Again 'for producing the plate-like silicon substrate according to the present invention may also be a shape shown in FIG 8 a,

87327.DOC -12- 200418632 Figures 10A, 11A, and 12A are shown in schematic perspective views. FIG. 8A is a schematic perspective view of a substrate C8 for manufacturing the plate-shaped silicon S8 of FIGS. 8B and 8C. 8D is a schematic cross-sectional view of the substrate of FIG. 8A along VIIIB-VIIIB; FIG. 8E is an enlarged view of a part of FIG. 8D. In addition, Fig. ⑽ is a schematic cross-sectional view of the plate-shaped silicon formed on the surface of Fig. 8D; Fig. 8 € is a schematic cross-sectional view of the plate-shaped silicon formed on the cross-section of the substrate of Fig. 8A along the line VIIIC-VIIIC. In FIG. 8E, the angle formed by the second surface 86A of the substrate and the third surface 88A of the substrate ya sa is a pure angle, and the angle formed by the third surface 88A of the substrate and the fourth surface 89A of the substrate ya 8B is also a pure angle. The cross-sectional shape of the plate-shaped silicon in FIG. 8B is substantially the same as that of the plate-shaped silicon when the substrate in FIG. 6 is manufactured, and has a three-sided structure of a first surface 81a, a second surface 82A, and a second surface 83 Aι; The cross-sectional shape of the plate-shaped silicon is a double-sided structure with a first surface 81A and a second surface 82C: that is, one piece of plate-shaped # 夕 而 a can be formed by the combination of the plate-shaped chip and the substrate of the present invention. Different cross-sectional shapes. In other words, if a part of the plate-shaped silicon has a double-sided structure, other sections may still have a three-sided structure. In this figure, although the plate-shaped silicon having the first surface, the second surface, and the third surface is represented by a planar structure, it may be a curved structure. FIG. 10B shows a plate-like silicon with a three-sided structure in section; FIG. UB shows a plate-like silicon with a four-sided structure in section; and FIG. 12B shows a plate-like silicon with a two-sided structure in section and one surface has a curved shape. Silicon. With the above-mentioned substrate having a plurality of surfaces, plate-shaped silicon can be manufactured with higher throughput. FIG. 10A is a schematic inter-body diagram of a substrate ci0 used for manufacturing the plate-shaped silicon si0 in FIGS. 10B and 10C. FIG. 10D is a schematic cross-sectional view of the substrate of FIG. 10A along the XB-XB <

87327.DOC -13-200418632 Surface view In addition, FIG. 10B is a schematic perspective view of the plate-shaped silicon formed on the surface of FIG. 10D. Similarly, Fig. 1 is a schematic cross-sectional view of a plate-like silicon formed along the XC-XC cross-section of the substrate of Fig. 10A. In FIG. 10B, three surfaces of the first surface 108, the second surface 108, and the third surface 1a are formed, and the first surface 101A and the second surface 102a Continuous to form an angle α10. In this figure, the normal vectors of the first face 108 and the second face 102a form an obtuse angle. Here, the first surface 101A is formed on the substrate first surface 105A. In addition, in FIG. 10C, the first surface i0iA and the second surface i02C are composed of two surfaces. The first surface 101 series and the second surface 102C are continuous to form an angle βίο 0. In 10B, the length of the first surface L101A is longer than the length of the second surface L102A and the length of the third surface L103A: it is to apply the plate-shaped silicon formed on the first surface to a solar cell For other devices, by setting the length L101A of the part applied to the product to be the longest, that is, by setting the area of the first side 108 to the maximum, the production efficiency can be improved. In addition, the length of the first surface is preferably 100 or more, and more preferably 100 mm or more. The reason is that the length of the first surface is longer than 28, and the plate shape obtained by immersion in one time. The larger the silicon, the less the raw material loss, and the more cost-effective plate silicon can be provided. Similarly, the length L101A of the first surface in FIG. 10c is preferably longer than the length l02C of the second surface. The length of the second surface Li02A is preferably 1 mm or more and 20 mm or less; and more preferably 2 mm or more and 15 mm or less, the reason is that the length of the second surface Ll02a will affect the shape of the plate. The capacity of silicon will have a considerable impact. When the length of the second surface is below mm at 87327.DOC -14 · 200418632, even if the plate-shaped stone s 10 grows, it is still easily peeled off by the substrate c 1 〇 and may be broken into one liquid each. Above 丨 mm, the plate-shaped chip will cover the substrate with the first surface 101 A and the second surface 102A, reducing the risk of falling. The angle αΐ () formed by the first surface 101A and the second surface 102A of the plate-shaped stone evening will also have a great impact on the situation where the plate-shaped broken sio falls: that is, the angle is smaller than 10, and the plate-shaped silicon The greater the chance that the S 10 will catch. Take 1G to 80. The following is better, and it is 10. Above 60. The following is better. 1〇. In the following, the front end portion of the substrate Cl0 will also have a pointed shape, which is not suitable for the shape affected by the heat of the melt. The reason is that when the front end portion is sharp, it is affected by the heat of the melt. It will be difficult to recycle the substrate. In addition, to prevent the plate-like silicon from falling, the angle formed by the first surface 1018 and the second surface 102 (2) will also have an effect, and the reason is that when the figure shows the angle and the part in ⑺ When loosened, the part shown as the angle βι〇 will play a second role in catching Shao Fen. For this reason, the angles of the angle α10 and the angle βι0 are preferably different and the angle a 1 〇 is smaller than the angle β 丨 0 is more preferable. In addition, when a plurality of hooking portions are provided to further suppress the occurrence of dropping, it is better to set the hooking portion with a small angle formed by a plurality of surfaces in the center of the substrate. Moreover, the substrate for manufacturing the plate-shaped silicon according to the present invention may have a shape as shown in the schematic perspective view of FIG. 11A. FIG. 11A is a schematic perspective view of the substrate C11 for manufacturing the plate-shaped silicon S11 in FIGS. 11B and 11C. Figure η d is a schematic cross-sectional view of the substrate of FIG. 11A along XIB-XIB. In addition, FIG. IiB is a schematic cross-sectional view of plate-shaped silicon formed on the surface of the substrate of FIG. 1D. Similarly, FIG. 1C is a diagram The outline of the plate-like silicon formed on the cross section of the 11A substrate along the xiC-XIC 87327.DOC -15-20041863 2 A schematic cross-sectional view. The plate-shaped silicon system shown in FIG. 11B is composed of four surfaces including the first surface, na, and the second surface 12A, the third surface 113A, and the fourth surface U4A. This refers to the case where the normal vector of the first surface 111 A and the third surface 丨 3 A forms an obtuse angle. In Figure 11B and Figure UC, the length B of the first surface is also longer than the length of the second surface. The length of the LI 12A and the third surface u 13A is preferred. Here, the length of the first surface L 111A corresponds to the length of the first surface of the substrate c 丨 丨 5. As described above, the normal vector is obtuse. There may be other surfaces ii2A between the first surface 丨 1A and the third surface 113A / 113C. In addition, the substrate for manufacturing the plate-shaped stone eve of the present invention may have a shape as shown in a schematic perspective view of FIG. 12a Fig. 12A is a schematic perspective view of a substrate C12 for manufacturing the plate-shaped silicon S12 of Figs. 12B and 12C; Fig. 12D is a base of Fig. 12A

A schematic cross-sectional view of the board along XIIB-XIIB; In addition, FIG. KB is a schematic perspective view of the plate-like silicon formed on the substrate surface of FIG. 12D; similarly, FIG. 2C is a schematic view of the substrate of FIG. 12A along XiIC-XIIC. A schematic cross-sectional view of the plate-shaped silicon formed on the cross section. The plate-shaped silicon system shown in FIG. 12B includes a first surface ι21A, a second surface 122B, and a second surface 123A of other surfaces, and is composed of three surfaces in total. In this figure, the normal vectors of the first surface 121 A and the second surface 122B form an obtuse angle. Because the second surface 122B has a curved surface structure, although there can be a plurality of normal vectors, in this figure, by using one side close to the second surface as the starting point of the vector, it can form an obtuse angle with the normal vector of the first surface 12 1A. . So generally, if the normal vectors of both the first and other faces are to form an obtuse angle, the second face 122B may be a flat surface or a curved surface. Here, the length of the first surface L121A corresponds to the length of the substrate of the substrate C12 87327.DOC -16- 200418632 The length of the first surface 125A. Furthermore, as shown in FIG. 13 to FIG. 16, the plate-shaped silicon substrate of the present invention preferably has a trench structure on the edge portion of the substrate. FIG. 1A is a schematic perspective view of a substrate C13 for manufacturing a plate-shaped silicon S13; FIG. 13 (: is a cross-sectional view of a state where silicon s3 is manufactured on the substrate C1 3 of FIG. 13A along XIIIC-XIIIC. Here 'The first surface 13 1A is separated from its edge by a trench structure F13 located on both sides. FIG. 13B is a cross-sectional view of Shixi S13 formed on the substrate C13 of FIG. 13A along XIIIB-XIIIB. The substrate of FIG. 13A On the other hand, the shape of the trench structure is the same as that of the substrate in FIG. 8 except that the trench structure F13 is formed on the first surface 135A and the second surface 136A of the substrate. The trench structure ρ3 mainly includes: as part of the product And a portion for easily separating silicon grown on the edge portion 135 & of the first surface 135A of the substrate and the edge portion 13 6a of the second surface 136A of the substrate. Because of the edge portion of the trench structure 3F13 The silicon grown on the substrate can be easily peeled off, which not only facilitates the continuous production, but also suppresses the quality difference of the plate-shaped silicon as a product. Here, the function of the trench structure F13 will be briefly described. Because the surface tension between Shixi melt and the substrate is large, As shown in FIG. 13C, although Shi Xi's molten liquid will contact the first surface of the substrate 35A and the edge portion 35a, the crushed molten liquid does not contact the groove structure with an appropriate size]? 13. For this reason, the substrate The plate-shaped silicon crystals grown on the surface of the first surface 135A and the silicon on the edge of the substrate crystallized on the clothing surface of the edge portion 1 35a are separated by the trench structure F 1 3. In addition, the trench structure F13 can have any shape as long as it has the function of separating the stone on the edge of the substrate from the silicon on the first surface.

87327.DOC -17- 2⑻418632 The cross-sectional shape of the groove structure can be rectangular, trapezoidal, or triangular. Especially, based on the ease of processing the groove, a rectangular cross-sectional shape is preferred. In addition, the groove width W13 of the groove structure F13 is preferably 1 mm to 20 mm, and more preferably 2 mm to 10 mm. The reason is that when the groove width W1 3 is less than 1 mm, The silicon on the edge of the substrate cannot be reliably separated from the silicon on the first surface; when the trench width W13 exceeds 20 mm, the utilization efficiency of the material deteriorates. In addition, the groove depth d 1 3 of the groove structure F1 3 is preferably 1 Him to 10 mm, and more preferably 2 mm to 5 mm. The reason is that when the groove depth D1 3 is less than 2 At mm, the silicon on the edge of the substrate cannot be reliably separated from the silicon on the first side; when the trench depth exceeds 10 mm, not only may the silicon fill the trench structure, but also the substrate may be caused by the deterioration of the substrate strength. Risk of breakage. However, when the size of the substrate becomes larger, the silicon on the first side and the silicon on the edge of the substrate will be harder to separate. In addition, the surface tension of the silicon melt, the environment during silicon growth, and the speed of the substrate The growth condition of the plate-shaped silicon also changes the separation state, so it is necessary to appropriately adjust. As shown in FIG. 13A, the trench structure includes three trenches: two trenches along the immersion direction of the substrate, and one trench disposed at a right angle to the above-mentioned trenches on the rear part of the impregnation. In addition, the trench structure shown in FIG. 13A is formed in a zigzag shape on the first surface, and most of the solar cells are square or elongated. Therefore, from the point of view of the utilization efficiency of materials, this shape is better. In addition, "for the purpose of designing South", there is no problem even if four or more grooves are formed. That is, the shape of the obtained plate-shaped silicon may be a pentagon and a hexagon. In FIGS. 14 to 16, a substrate groove structure is also provided, which can be made into a plate shape.

87327.DOC -18-200418632 The part of Shixi products and the edge part are separated from each other. Fig. 14A is a schematic perspective view of a substrate C14 for manufacturing plate-shaped broken S14: Fig. 14C is a cross-sectional view along XIVC-XIVC in Fig. 14A; Fig. UB is a substrate C14 in Fig. 14A along XIVB in Fig. 14A- Sectional view of the plate-shaped chip S14 formed by XIVB; the substrate of FIG. 14A has the same structure as the substrate of FIG. 10A, except that the groove structure F14 is formed on the first surface 145a and the second surface 146A of the substrate. shape. Fig. 14B is a cross-sectional view of a plate-shaped silicon s14 composed of three surfaces: a first surface 141A, a second surface 142A, and a third surface 143A. In this figure, an obtuse angle is formed between the normal vector of the first surface 141A and the normal vector of the second surface 142A. In this case, the formation of a trench structure with three trenches' can separate the stone surface on the edge of the substrate from the first surface 141A. At this time, the second surface 142A and the third surface 143A will exist at the positions sandwiched by the trench structure: that is, the trench structure F 14 will be disposed so as not to affect the first surface 141A, the second surface 142A, And the third surface 143 A. In this way, the area separated by the trench structure can be peeled off by the substrate C 14 and can be easily used as a product. Here, the groove width W14 and the groove depth D14 of the groove structure may be the same as the above-mentioned groove structure. FIG. 15A is a schematic perspective view of the substrate C15 for manufacturing a plate-shaped silicon S15; FIG. 15C is a cross-sectional view taken along the line XVC-XVC in FIG. 15A; FIG. 15B is formed on the substrate C15 of FIG. 15A along the XVB-XVB of FIG. 15A Sectional view of the plate-shaped silicon S15; the substrate of FIG. 15A has the same structure as the substrate of FIG. A except that a trench structure ρ5 is formed on the first surface 155a and the second surface 1 5 6 A of the substrate shape. 87327.DOC -19- 200418632 Figure MB is a cross-sectional view of a plate-shaped silicon S15 composed of four surfaces: a first surface 151A, a second surface 15 2A, a third surface 153A, and a fourth surface 154 A. In this figure, an obtuse angle is formed between the normal vector of the first surface 151A and the normal vector of the third surface 153A. As shown in FIG. 15C, the trench cross-sectional view of the trench structure F15 is triangular. Even if it has the above-mentioned cross-sectional shape, it can still play a sufficient function as the groove structure k 'so that the plate-shaped chip can be separated from the edge portion and the first surface. Even if a groove structure F 1 5 having a triangular cross section is used, the groove width w 1 5 and the groove depth D 1 5 can be the same as those of a rectangular cross section. FIG. 16A is a schematic perspective view of a substrate C16 for manufacturing a plate-shaped chip S16; FIG. 16C is a cross-sectional view taken along XVIC-XVIC in FIG. 16A; FIG. 6B is an XVIB on the substrate C 16 in FIG. -A cross-sectional view of the plate-shaped silicon s6 formed by XVIB; the substrate of FIG. 16A has the same shape as the substrate of FIG. 12A except that a trench structure F16 is formed on the first surface 165A of the substrate. FIG. 16B is a cross-sectional view of a plate-shaped silicon composed of three surfaces including a first surface 161A, a second surface 162B, and a third surface 163A. In the figure, the first round 161A, the normal vector and the normal vector of the second surface 162B form an obtuse angle. Because the second surface 162B has a curved surface structure, although there can be a plurality of normal vectors, in this figure, by using one side near the third surface 163A as the starting point of the vector, an obtuse angle can be formed with the normal vector of the first surface 161A. . As shown in FIG. 16C, the cross-sectional view of the trench structure F16 is trapezoidal. Even if it has the above-mentioned cross-sectional shape, it can still fully function as a groove structure, so that the plate-shaped element at the edge portion can be separated from the first surface. Even if a trench structure F16 having a trapezoidal cross-section is used, the trench width W16 and the trench depth ⑽ can adopt the above-mentioned dimensions as a rectangular cross-section. However, using

87327.DOC -20- 200418632 A substrate having a trapezoidal groove structure F [6 as shown in FIG. 16C (: 16), compared with a substrate having a rectangular groove structure, the groove width W1 of the groove structure is As shown in FIG. 13 to FIG. 16, in the plate-shaped silicon in which the first and other surfaces are continuous, the normal vector of the first surface and the normal vector of at least one surface constituting the other surface are anti-parallel or obtuse, Furthermore, by providing a groove structure on the edge portion of the first surface, the recovery rate of plate-like debris can be greatly improved. In addition, in the present invention, by providing a groove structure on the edge portion of the substrate, the substrate is grown on the surface of the substrate. The plate-shaped silicon can be easily separated into the plate-shaped silicon formed on the first surface and the plate-shaped silicon formed on the edge portion with the above-mentioned trench structure; therefore, when manufacturing solar cells, it is not necessary to provide The edge part where the error occurs is subjected to a cutting process, and it is directly used as a product. In addition, the trench structure can easily separate the plate-shaped silicon formed on the first surface of the substrate from the edge part, so it can reduce Caused by heat shrinkage during cooling Next, as shown in FIG. 17 to FIG. 19, even if the shape of the groove structure and the protrusion structure on the substrate is adopted, the plate-shaped silicon of the present invention can be manufactured. FIG. 17A shows the plate-shaped silicon S17 is a schematic perspective view of the substrate C17 for manufacturing S17; FIG. NB is a cross-sectional view of the plate-shaped silicon S17 formed by XVIIB-XVIIB in FIG. 17A; FIG. 17C is a plate-shaped stone manufactured on the substrate C17 along XVIIB-XVIIB in FIG. 17A A cross-sectional view of the state of the evening S 1 7. In Figure 17B, the plate-shaped stone evening § 1 7 has a normal vector of 171 八 and a normal vector of 171 八 and a second face of 172 八. In Fig. 17A, the crystal growth surface of the substrate, with respect to the immersion direction of the melt solution 87327.DOC -21-200418632 (direction shown by P in the figure), two parallel protrusions K17 are formed on the edge of the substrate The pair of protrusions K1 7 in the sole 7C showing the cross section of the substrate: the second surface 176A of the substrate formed by the inside of the protrusion is at an acute angle with the first surface 175 A of the substrate, and it is preferably formed at 30 to 60 degrees ; The height of the protrusion K17 HK17 is preferably set to 2 mm or more, and particularly set in the range of 2 mm to 10 mm When the silicon melt is solidified on the substrate C17 having the above-mentioned protrusion K17 to form a plate-like silicon, the temperature of the silicon will decrease sharply from the melting point and cause thermal contraction; on the other hand, the substrate side will be caused by the silicon melt. Thermal expansion occurs due to heat. Here, if a structure in which the plate-shaped silicon and the substrate are completely adhered, an opposing force is generated between the two, and the plate-shaped silicon is difficult to peel off from the substrate, the plate-shaped silicon is cracked, or the turtle When the substrate C 17 with the shape shown in FIG. 17A is used, even if the silicon shrinks and the substrate swells due to thermal influence, there is no opposite force between the two, so that the plate-like silicon is not deformed. , Easily peeled from the substrate. Since no stress is applied to the plate-like silicon obtained as described above, a plate-like stone with low quality and small error can be obtained. As a result, when a solar cell temple device is manufactured from a plate-shaped stone eve, a high-performance and inexpensive solar cell can be obtained. By using the trench structure F17 on the substrate C17 having the above-mentioned shape, the first surface 171A of the plate-shaped silicon for the product can be easily separated from the silicon formed on the edge portion of the substrate. The trench width W17 and the trench depth D1 7 of the trench structure can be the same shape as described above. With the above-mentioned trench structure, the unstable silicon grown on the edge of the substrate will not be necessary as a product, and the thermal stress from the substrate and the silicon melt when the plate-shaped silicon is manufactured will be unnecessary.

87327.DOC -22- 200418632 becomes smaller, the quality of the first side of the plate-like silicon 1 7 1 A will be reduced and the situation of instability will be reduced. • The above effect will be caused when the plate-like stone is directly produced from the Shixi melt. Quite significant. In addition, in the case shown in FIG. 17B, there are two second surfaces 1 72A where the protrusions K1 7 are formed on the first side of the plate-shaped silicon 丨 7! A, but the invention is not limited thereto. FIG. 18A is a schematic perspective view of a substrate C18 for manufacturing a plate-shaped stone S18; FIG. 8B is a sectional view of the plate-shaped silicon S18 formed by XVIIIB-XVIIIB of FIG. 18A; FIG. 18C is a view taken along the line XVIIIB-XVIIIB in FIG. 18A A cross-sectional view of a state where a plate-shaped silicon S 1 8 is manufactured on the substrate Ci8. In FIG. 18A, two parallel pairs of protrusions K18a and K18b are formed on the edge of the substrate on the crystal growth surface of the substrate with respect to the immersion direction of the melt (the direction shown by P in the figure). The protrusion K1 8 is shown in FIG. 1c showing the substrate cross section. The second surface 186A of the substrate formed by the inside of the protrusion is at an acute angle with the first surface 185A of the substrate. When the substrate C18 shown in FIG. 18A is used, there are four second surfaces formed continuously with the first surface 181A of the plate-shaped silicon. In order to prevent the plate-shaped silicon s 1 8 from falling off from the substrate C 18, it is preferable that the second surface is formed with a plurality of left and right sides. Similarly, when using the above-mentioned substrate C18, since the stress of the plate-shaped silicon from the substrate becomes smaller, the plate-shaped silicon S18 can be easily peeled off by moving the plate-shaped silicon S18 toward the immersion direction. Here, the trench width F8 and the trench depth D18 of the trench structure F8 can adopt the aforementioned shapes and sizes. FIG. 19A is a schematic perspective view of a substrate Ci9 on which plate-shaped silicon 19 is manufactured. FIG. 19β is a cross-sectional view of plate-shaped silicon S 19 fabricated along χΙχΒ_χιχβκ on substrate C19 of FIG. 19A, and FIG. 19C is a cross-section of plate-shaped silicon fabricated along xixc-xixc on substrate C: 19 of FIG. 19A Fig. 19D is a cross-sectional view of the base plate 87327.DOC -23- 200418632 of Fig. 19 along XIXC-XIXC. In FIG. 19A, a pair of parallel protrusions K19 are formed on the edge portion of the substrate with respect to the immersion direction of the melt (the direction shown by P in the figure) on the crystal growth surface of the substrate. In FIG. 19C showing the cross-section of the substrate, the protrusion K19 is a second surface 1 96 A of the substrate formed by the inner side of the protrusion at an acute angle with the first surface 195A of the substrate. With the substrate C 19 as described above, the function of suppressing the drop can be further enhanced. In the figure, the plate-shaped stone formed at the center of the substrate immersion direction includes the first surface 19 1A and has a four-sided structure; and the plate-shaped lithography formed on the left and right of the substrate immersion direction includes In the case of the first surface 191A, it has a two-sided structure. By making the obtained plate-shaped pieces have a multi-faceted structure as described above, the productivity can be further improved. Furthermore, it can be seen from the figure that a first surface 191A of plate-shaped silicon is formed on the first surface 195A of the substrate. In addition, the groove width W19 and groove depth D19 of the groove structure ρ 19 may adopt the aforementioned shapes and sizes. FIG. 20A is a schematic perspective view of a substrate C20 for manufacturing a plate-shaped silicon S20; FIG. 20B is a cross-sectional view of the plate-shaped stone S20 formed along the XXB-XXB on the substrate C20 of FIG. 20A; FIG. 20C is an upper edge of the substrate C20 of FIG. 20A Sectional view of plate-shaped silicon S20 formed along XXC-XXC. The shape of the substrate is a polyhedral shape in which only one of the four sides includes the second surface of the substrate. However, the shape of the substrate shown in FIG. 20A is a polyhedral structure in addition to the substrate's side. That is, in the case of adopting the above-mentioned structure, the portion of the obtained substrate capable of catching the substrate is increased, so that the number of cases where pieces are dropped during growth is reduced. When the plate-shaped silicon S20 is peeled from the substrate C20 having the above-mentioned shape, the plate-shaped silicon S20 is hooked on both sides of the substrate. Therefore, in FIG. 20A, the plate-shaped silicon can be slanted to the upper side of the substrate. Move, 87327.DOC -24- 200418632 to peel off the plate-like silicon from the substrate C20. Here, in FIGS. 20B and 20C, the widths L202A and L201C of the second surface that forms the fitting portion with the first surface 201A of the plate-shaped silicon can be appropriately adjusted. In addition, the first surface 208 is formed on the surface of the first surface 205A of the substrate. Next, on the substrates shown in FIG. 4A to FIG. 8A and FIG. 10A to FIG. 20A, it is preferable to form fine unevenness on the portion where the first surface of the plate-like silicon grows, and the reason is: Regular irregularities are provided on the surface of the substrate so that the crystal nuclei of 5 yeas are easily generated, which will help stabilize the shape of the obtained plate-like stone. The above-mentioned regular irregularities are intentionally formed on the substrate surface, and it is preferable to precisely control the distance between the convex portions. The distance between the convex parts is preferably 0.5 mm or more and 2 mm or less. When the distance is less than 0.5 mm, the crystal grains of the plate-shaped chop obtained will be too small to fully improve the characteristics of the solar pond; another On the other hand, if it is larger than 2 mm, the surface unevenness of the obtained plate-shaped stone will become large, and it will be difficult to manufacture solar cells through low-cost processing cores. In addition, the difference in height of the unevenness is preferably from 0.1 mm to 1 mm. The reason is that when the height difference is less than 0.1 mm, depending on the distance between the convex portions, the front end angle of the convex portions becomes large, resulting in Crystal nuclei are also inappropriate at the edge of the convex portion; when the height difference is greater than 1 mm, the melt will also flow into the concave portion, causing the resulting plate-like silicon to become uneven. As described above, by providing the small convex portions, not only the obtained plate-like silicon shape is stabilized but also contributes to the stabilization of the quality; however, the obtained plate-like broken surface sometimes includes small irregularities. That is, the rough plane mentioned in the present invention encompasses a surface having a regular irregularity which is generated when a substrate having the fine irregularities described above is used. 87327.DOC -25- 200418632 (manufacturing device for plate-shaped silicon) Next, the manufacturing device for plate-shaped pieces of the present invention will be described with reference to FIG. 9 showing a schematic cross-section of the device. The manufacturing of the plate-shaped silicon of the present invention is not limited to the device. In FIG. 9, the manufacturing apparatus of plate-shaped silicon includes a substrate C, a hanging pin 93, a silicon melt 94, a heating heater 95, a crucible stand 96, a heat insulating material 97, a crucible lifting shaft 98, and a fixing device. Axis 99 on the substrate. Plate-shaped silicon S grows on the surface of substrate C. The figure does not show the exterior of a manufacturing device including a substrate c moving device, a pin lifter 96 lifting device, a heating heater control device, a silicon additional input device, a vacuum exhaust processing chamber, etc. However, this manufacturing device It has a well-closed processing chamber, and it is necessary to adopt a structure capable of replacing the gas with inert gas or the like after the real cheese is exhausted. At this time, although argon and helium can be used as the inert gas, based on cost considerations, it is better to use argon, and by constructing a circulating device, it will help to further reduce costs. In addition, if a gas containing an oxygen component is used, it is necessary to remove the oxygen component as much as possible because it attaches to the substrate surface and the processing chamber wall due to the generation of silicon oxide. Furthermore, even when using a gas circulation type device, it is preferable to pass the circulating gas through a filter or the like to remove silicon oxide particles. As shown in Fig. 9, the substrate c whose temperature is lower than the temperature of the silicon melt is a silicon melt 94 which enters the crucible 93 from the left side of the figure, and is immersed in the silicon melt 94. At this time, the silicon melt is held above the melting point by the heater 95 for heating. In order to obtain stable plate-shaped silicon, it is necessary to construct a device capable of tightly controlling the temperature of the melt, the ambient temperature in the processing chamber, and the temperature of the substrate C. By constructing the above-mentioned device ', plate-shaped silicon can be obtained with better reproducibility.

87327.DOC -26- 200418632 On the substrate, it is better to provide a structure that is easy to apply temperature control. Although the material of the substrate is not particularly limited, it is preferably a material having good thermal conductivity and a material having excellent heat resistance, and more preferably a graphite subjected to high-purity treatment or the like. For example, high-purity graphite, silicon carbide, quartz, boron nitride, alumina, zirconia, aluminum nitride, and metals can be used. The most suitable material can be selected according to the purpose; high-purity graphite is relatively cheap and easy to process. So it is more suitable. The material of the substrate can be appropriately selected according to various characteristics such as the degree of industrial low cost and the quality of the obtained plate-shaped silicon substrate. Furthermore, if metal is used as the material of the substrate, as long as it is cooled frequently, the temperature of the substrate is kept below the melting point of the substrate, so as to avoid having a great influence on the characteristics of the substrate, there is no problem in use. For easy temperature control, a copper-made fixed substrate is suitable. The fixed substrate refers to a portion where the shaft 99 is connected to the substrate c, and is not shown here. The cooling devices for the fixed substrate and the substrate c can be roughly divided into two types: direct cooling and indirect cooling. Direct cooling is a device that blows gas directly to the substrate to cool it; indirect cooling is indirectly cooled by gas or liquid. Device. Although the type of the cooling gas is not particularly limited, for the purpose of preventing plate-like crushing oxidation, inert gas such as nitrogen, argon, and helium is preferred. Especially when considering the cooling force, helium gas or a mixed gas of helium and nitrogen gas is preferred, but when cost is considered, nitrogen gas is preferred. As for the cooling gas, circulation by a heat exchanger or the like can further reduce the cost, and as a result, inexpensive plate-shaped silicon can be provided. Moreover, the substrate temperature is preferably adjusted by a cooling device and a heating device. For the substrate immersed in the silicon melt, there will be plate-shaped silicon on the surface of the substrate. 87327.DOC • 27- 200418632. Although the substrate is immersed in the melt to a certain depth, the whole substrate will not be adjusted. Immersion in silicon melt is more appropriate. Subsequently, although the substrate is taken out of the melt, the temperature of the substrate tends to rise because the substrate is heated by the silicon melt. However, if the substrate is to be immersed in a silicon melt at the same temperature, it is necessary to provide a cooling device capable of lowering the temperature of the substrate. However, regardless of whether direct cooling or indirect cooling is used, it is difficult to control the cooling rate (ie, substrate temperature) at any time, so it is better to install a heating device at the same time. That is, the substrate once taken out of the silicon melt is cooled by a cooling device, and then the substrate temperature is preferably controlled by a heating device before being immersed in the silicon melt. The heating device at this time may be a high-frequency induction heating method or a resistance heating method; however, conditions must be met so as not to affect the heating heater used to keep the silicon in a molten state. In this way, by using a cooling device and a heating device together, the stability of the plate-shaped silicon can be greatly improved. As important as substrate temperature control is the temperature management of the silicon melt. If the temperature of the melt is set near the melting point, the surface of Shi Xi's melt may solidify because the substrate contacts the melt. Therefore, the temperature of the melt is preferably higher than the melting point. That is, it is preferable that strict control is applied to a plurality of thermocouples or radiation thermometers. In order to tightly control the temperature of the melt, although it is better to immerse the thermocouple directly into the melt, it is not suitable because foreign matter in the protective tube from the thermocouple is mixed into the melt '. For the control part, it is better to use a thermocouple inserted into the crucible to control the temperature indirectly, or use a radiation thermometer to control the silicon. 87327.DOC • 28- 200418632 Melt temperature and other structures are better. The crucible 93 containing the melt is installed on the heat insulating material 97; the reason is to keep the melt / dish balance in a uniform state, and to suppress the heat from the bottom of the hanging pin: to a minimum. The heat insulating material 97 is provided with a crucible table 96. The crucible 〇96 must be connected to the crucible lifting shaft%, and a lifting device is provided. The reason is that in order to grow the plate-shaped silicon on the substrate c, it is necessary to keep the To the same depth. In addition, in order to keep the position of the molten liquid level constant, that is, to supplement the cutting loss due to the removal of the plate-shaped plutonium and evaporation, you can use + silicon and 4 crystals (block) to melt it, Sequential direct addition of melt, or sequential addition of powder II, etc., the core ± that maintains the level of the liquid level is not particularly limited; however, it is better to use a method that does not disturb the liquid level, and the reason is: f When the molten liquid surface is disturbed, the generated waveform will be reflected on the molten silicon surface side of the plate-shaped silicon, which may damage the uniformity of the obtained plate. (Manufacturing method of plate-shaped silicon) Next, the manufacturing method of plate-shaped silicon of the present invention will be described using the plate-shaped silicon manufacturing apparatus shown in FIG. 9. First, in order to make the resistivity of the obtained plate-shaped silicon reach a desired concentration, the jewels whose densities are adjusted are filled, and a crucible 93 made of high-purity graphite is filled. Next, a vacuum is applied to the processing chamber to decompress the processing chamber to a specified pressure. Subsequently, argon (Ar) gas was introduced into the processing chamber, and a flow rate of 10 liters / minute was allowed to circulate in the upper part of the processing chamber. The reason for this is that a clean Shixi liquid level can be obtained by frequently communicating the gas. 87327.DOC -29- 200418632 Next, set the temperature of the silicon melting heater 95 to i50 (rc), so that the silicon block in the crucible 93 is completely melted. At this time, the The liquid level will drop, so additional silicon powder is added so that the liquid level of the silicon melt is about 丨 cm from the upper end of the crucible. The heater for silicon melting does not raise the temperature to 1500 C at a time, but it is 10 to 50 ° c / The heating rate is about 1 300 C per minute, and then the temperature is increased to the specified temperature, and the reason is that, if the temperature is increased rapidly, the thermal stress will be concentrated in the corner of the crucible and the crucible will be damaged. Subsequently, After setting the temperature of the silicon melt at 1410t and keeping the temperature at 30 minutes to stabilize the melt temperature, use the crucible lifting shaft 98 to move the crucible 93 to the position of the fingertips; at this time The temperature of the silicon melt is preferably above 400π and below 1 500 ° c. Since the silicon melting point is around 141 (rc, if it is set below 1400t, silicon will begin to solidify from the crucible wall, and the final liquid level will also be It will gradually become firm. However, there is convection due to heat in the silicon melt. The temperature can be set to 1400 t when production is not performed for a period of time. In addition, if the temperature is set to 1500 C or higher, the growth rate of the obtained plate-like silicon will be slower, resulting in deterioration of productivity, so it is not appropriate. To grow plate-shaped silicon, for example, the substrate shown in FIGS. 4A to 8A is moved from the left to the right in the direction of the arrow in FIG. 9. When moving, the first surface of each substrate (45A, 55A, 65A, 75A, 85A) contact Shixi melt solution. In this way, by bringing the substrate surface into contact with the silicon melt solution, the plate-like stone grows on the surface of the substrate. It is used to manufacture the track of plate-shaped silicon on the substrate. , Can be the track shown in Figure 9, can also be circular or elliptical track; in particular, can achieve any track structure.

87327.DOC -30- 200418632 α The temperature of the surface of the substrate when the sand melt is in the range of 200 ° C or higher and 110 ° C to ^ # »′ is because the substrate temperature is 2000. (: It is difficult to control the stability in the following cases. That is, during continuous production, it is difficult to maintain the temperature at 200 because the substrate in the processing chamber is ready to be immersed < the substrate is doubled to the radiant heat of the silicon melt. The quality of the obtained plate-like chip is unstable; in addition, when the substrate temperature is above 1 100 ° C, not only the growth rate of the plate-like plate is slowed down, but also the substrate may be fixed to the silicon and the productivity may be deteriorated. In the meantime, the plate-shaped silicon obtained is likely to have a difference due to the substrate / plate degree. Therefore, it is better to provide a cooling device and a heating device at the same time. The first continuous surface of the silicon is formed by the front end of the substrate in the forward direction of the substrate. When the plate-shaped silicon is obtained by collapsing the substrate next to the silicon melt, it is antiparallel or obtuse with the normal vector of the first surface The other side is on the traveling direction side of the substrate. Specifically, the upper portion of the substrate shown in FIGS. 4A, 5, 6, 7A, and 8A is taken as the traveling direction (the traveling direction in the figure is represented by P). As a result, silicon grows at the front end of the substrate, such as The plate-shaped silicon shown in FIG. 1 to FIG. 3 and FIG. 8A is generally, and the silicon is opened at the cut end of the substrate to form a fitting portion, which is easy to resist gravity. Therefore, the plate-shaped silicon can be dropped from the substrate. In this case, it is possible to manufacture plate-shaped silicon with a higher production capacity, and it is easy to carry the plate-shaped silicon out of the processing chamber. As mentioned above, in order to improve product productivity and further stabilize the quality, it is necessary to use a temperature control device that can control the temperature as closely as possible. The structure is better. (First Example) (Manufacture of plate-shaped silicon) The boron concentration is adjusted so that the resistivity becomes 丨 · 5 Ω .cm. The silicon raw material is placed in 87327.DOC -31-200418632 Made of 咼 purity graphite The crucible protected by a crucible made of quartz was placed in the processing chamber as shown in Figure 9. First, the real processing of the processing chamber was carried out, and the inside of the processing chamber was decompressed to a normal pressure and then replaced with normal pressure gas. & The gas is introduced into the processing chamber, the processing chamber is returned to normal pressure, and then the gas is constantly flowed in from the upper part of the processing chamber at a flow rate of 2 liters / minute. Next, the silicon raw material is melted by a heater, but it is fixed at 1 〇 (] / Min heating rate to melt the silicon The heater was heated up to 15001. Once it was confirmed that the silicon material was completely melted, the temperature of the crucible was kept at 1425t to stabilize the temperature. Next, a growth substrate having a shape as shown in FIG. 4A was immersed in a melt of 10 mm to 100 pieces of plate-shaped silicon were grown. The temperature of the substrate when immersed in the silicon melt was set to 600 ° C. In addition, the angle γ4 between the first surface 45a of the substrate and the second surface 46 of the substrate was 50 degrees, and the second surface of the substrate was 50 °. The width L46a is 10 mm. The obtained plate-like silicon has the shape shown in Figure 丨: the size of the first side is 75 mm diagonally, and the second side is 10 mm; in addition, the first side The average thickness is about 0.35 mm. Here, the plate-like silicon is separated from the substrate by laser cutting. With the above substrate, the drop rate of the plate-shaped silicon is 5%. The so-called drop rate is the ratio of the number of plate-like silicon that cannot be taken out of the processing chamber to the number of substrate immersion times. (Production of Solar Cell) Next, a solar cell was produced using the obtained plate-shaped silicon. The obtained plate-shaped silicon was cut with a laser, and a 70 mm × 70 mm claw was cut from the first side. The spoon-shaped plate was formed with a mixed solution of nitric acid and fluoric acid.

87327.DOC -32- 200418632 and after washing, apply alkaline etching with sodium hydroxide. Next, a p-type substrate η4 · layer is formed by poci diffusion. After removing the PSG film formed on the plate-like broken surface with fluoric acid, a plasma CVD device was used to form a silicon nitride film on the n + layer serving as the light-emitting surface of the solar cell. Next, the n + layer also formed on the back surface side of the solar cell was removed by etching using a mixed solution of nitric acid and fluoric acid to expose the p substrate, and a back electrode and a hafnium layer were simultaneously formed thereon. Next, a screen-side printing method was used to form an electrode on the light-incident side. Next, a part of the silver electrode was subjected to a dip soldering process to prepare a solar cell. The known solar cell was evaluated for cell characteristics using "Crystalline Solar Cell Output Measurement (JIS C 8913 (1988))" under irradiation of AM 1 · 5,100 mW / cm2. From the measurement results, from the average value of the completed battery cells, the short-circuit current was 30.33 (mA / cm2), the open-circuit voltage was 574 (mV), the curve factor (Fill Factor) was 0.741, and the efficiency was 12.9 (%). (Second Embodiment) Except that the growth substrate shown in FIG. 5 and the surface temperature of the substrate when immersed in the melt are 30 ° C., the plate-shaped silicon is completely manufactured according to the method of the first embodiment. In addition, the substrate The width L56B of the two sides 56B is 4 mm, and the height H56B is 5 mm. The obtained plate-shaped silicon has a shape as shown in FIG. 2: The size of the first side 21A is 75 mm diagonally, and the length of the second side is 75 mm. The length L22B is 4 mm; In addition, the average thickness of the first field 21A is about 0.41 mm ° Using the above substrate, the drop rate of the plate-shaped silicon is 4%.

87327.DOC -33- 200418632 The plate-like silicon obtained was used to manufacture a solar cell, and the same evaluation of the characteristics of the battery cells as in the first embodiment was performed. As a result of measuring the manufactured solar cell, the short-circuit current was 29.68 (mA / cm2), the open-circuit voltage was 57 1 (mV), the curve coefficient was 0.730, and the efficiency was 12.39 (%). (Third embodiment) Except that the growth substrate shown in FIG. 6 and the surface temperature of the substrate when immersed in the molten liquid were 450 ° C, the plate-shaped chip was produced entirely according to the method of the first embodiment. The width L66A of the second surface 66A of the substrate is 5 mm, and the height H68A of the third surface 68A of the substrate is 3 mm. The obtained plate-like silicon has a shape as shown in FIG. 3: the size of the first side 31A is 75 mm diagonally, the width L32A of the second side is 5 mm, and the width L34A of the third side is 3 mm; The average value of the thickness of the first surface 31A is about 0.3 8 mm. With the above substrate, the drop rate of the plate-shaped silicon is 4%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured results of the manufactured solar cells were averaged. The short-circuit current was 29.32 (mA / cm2), the open-circuit voltage was 5 62 (mV), the curve coefficient was 0.750, and the efficiency was 12.37 (%). (Fourth embodiment) Except for using the growth substrate shown in Fig. 7A, plate-like silicon was manufactured entirely in accordance with the method of the first embodiment. For the substrate used, the size of the first surface 75A of the substrate is 75 mm diagonal, the width L76A of the second surface 76A of the substrate is 2 mm, and the width L78A of the third surface 78A of the substrate is 3 mm; The angle γ7 A between one surface 75 A and the second surface 76A of the substrate is 150 degrees, and the angle γ7B between the second surface 76A of the plate 76A and the third surface 78A of the substrate is 80 degrees. The size of the first side of the obtained plate-shaped silicon was 75 mm diagonally, the width of the second side was 2 mm, and the length of the third side was 3 mm. In addition, the average value of the thickness of the first side was approximately 〇 3 3 mm. With the above substrate, the drop rate of the plate-shaped silicon is 4%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured results of the manufactured solar cells were averaged. The short-circuit current was 28.83 (mA / cm2), the open-circuit voltage was 5 60 (mV), the curve coefficient was 0.747, and the efficiency was 12.05 (%). (Fifth Embodiment) Except for using the growth substrate shown in Figs. 8A and 8D and setting the crucible temperature to 14151, the method of the first embodiment was used to produce plate-shaped silicon. For the substrate used, the size of the first side 8 A is 75 mm diagonal, the width L86A of the second side 86A of the substrate is 2 mm, and the width L88 A of the third side 88A of the substrate is 8 mm. In addition, the angle γ8A of the substrate second surface 86 A and the substrate third surface 88 A is 120 degrees, and the angle γ8B of the substrate third surface 88A and the substrate fourth surface 89A is 120 degrees. Furthermore, in FIG. 8A, the length L88A of the third surface of the substrate is 25 mm, and the length L8 6 A of the second surface of the substrate is 25 mm. The width L82A of the second surface 82A of the obtained plate-shaped silicon was 2 mm, and the width L83A of the third surface 83A was 3 mm. In addition, the average thickness of the first surface 81A of the plate-shaped silicon was approximately 0.4 mm. With the above substrate, the drop rate of the plate-shaped silicon is 3%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the evaluation of the characteristics of the battery cells was performed in the same manner as in the first embodiment 87327.DOC -35-200418632. The measured results of the manufactured solar cells were averaged. The short-circuit current was 29.43 (mA / cm2), the open-circuit voltage was 57 ° (mV), the curve coefficient was 0.760, and the efficiency was 12.75 (%). (Sixth embodiment) Except for using the growth substrate shown in Figs. 10A and 10D and setting the crucible temperature at 1410t, the plate-shaped pieces were produced entirely by the method of the first embodiment. As for the substrate used, the size of the first side 105A is 75 mm diagonal, the width of the second side 106A of the substrate 106A is 2 mm, and the length of the second side of the substrate 1 ^ 106 is 25 111111. Length of the third surface of the substrate]: 1088 is 250111. In addition, the angle γ10 between the first round IMA of the substrate and the third surface of the substrate is degrees. The width W102A of the second surface 102A of the obtained plate-shaped silicon was 2 mm, and the width of the second surface 103A was 1 mm; in addition, the first surface of the plate-shaped silicon was 1 μA (the average thickness was Approximately 0.43 mm. Using the above-mentioned substrate, the drop rate of the plate-shaped silicon was 3%. In addition, the obtained plate-shaped silicon was used to manufacture a solar cell, and the same cell characteristics evaluation as in the first embodiment was performed. #Manufacture The measured results of the obtained solar cells are averaged, and the short-circuit current is 30.02 (mA / cm2), the open-circuit voltage is 569 (mV), the curve coefficient is 0.750, and the efficiency is 12.81 (%). The growth substrate shown in Figs. 11A and 11D and the immersion depth other than 8 mm are used, and the plate shape is made according to the method of the first embodiment. 87327.DOC • 36- 200418632 Shi Xi. The second side of the substrate The width W116A of the substrate is 1 mm, the length of the second surface of the substrate L116 is 25 mm, the width of the third surface of the substrate W118A is 2 mm, and the length of the third surface of the substrate 1118 is 25 111111. In addition, the first surface of the substrate 1158 and The angle of the second surface of the substrate is 150 degrees, and the angle of the second surface of the substrate and the third surface of the substrate is 8 °. In terms of the growth substrate used, the size of the first side n 5 A is 75 mm diagonally. The width of the second side n2A of the obtained plate-shaped silicon is 1 mm, and the third side is ii3A. Width U13A * 2 mm; In addition, the average thickness of the first surface 111A of the plate-shaped silicon is about 0.33 mm, so that it can be easily peeled from the substrate. Using the above substrate, the drop rate of the plate-shaped silicon is 3 %. In addition, the obtained plate-shaped pieces were used to manufacture a solar cell, and the same evaluation of the characteristics of the battery cells as in the first embodiment was performed. The measured results of the manufactured solar cells were averaged, and the short-circuit current was 28.60 ( mA / cm2), open circuit voltage 560 (inV), curve coefficient is 0.743, and efficiency is 11.91 (%). (Eighth embodiment) Except for using the growth substrate shown in FIG. 12A and FIG. 12D and setting the immersion depth at Except for 5 mm, other methods are used to manufacture plate-like silicon. The width W126A of the second surface of the substrate 126A is 1 mm, the length of the second surface of the substrate L126 is 28 mm, and the height of the third surface of the substrate H128A is 2 mm. The length L128 of the third side of the substrate is 19 mm. , I 25 A size of the first side is diagonal length -37-

87327.DOC 200418632 75 mm. The width of the obtained plate-shaped hard third surface 123A B1232 is 1 mm; in addition, the average value of the thickness of the plate-shaped stone evening _plane 121-8 is about ⑺ mm ° Using the above substrate, plate-shaped silicon The drop rate is 3%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured results of the manufactured solar cells were averaged. The short-circuit current was 29.48 (mA / cm2), the open-circuit voltage was 556 (mV), the curve coefficient was 0.742, and the efficiency was 12.16 (%). (Ninth embodiment) (Production of plate-shaped silicon) The boron concentration was adjusted so that the silicon material with a resistivity of 20 Ω · cm was placed in a high-purity graphite crucible, and then fixed in a crucible as shown in FIG. 9 Processing room. First, vacuum processing the processing chamber, decompress the inside of the processing chamber to 10 · 5 Torr, and then replace it with normal pressure of Dendrobium gas, then introduce Dendrobium gas into the processing chamber, return the processing chamber to normal pressure, and then make the gas It often flows in from the upper part of Process A at a flow rate of 5 liters / minute. Next, the silicon raw material was melted by the heater. However, the silicon melting heater was heated to 1500 ° C at a temperature rise rate of 20 ° C / minute. Once it was confirmed that the raw material was completely melted, the temperature was maintained at 3 hour. Subsequently, the temperature of the crucible was kept at 1415 ° C to stabilize the temperature. Next, 100 pieces of plate-shaped pieces were grown by immersing in a solution of 9 mm in a growth substrate having a shape shown in FIG. 13A. The length L136 of the second surface of the substrate is 35 mm, and the length L138 of the third surface of the substrate is 45 mm. In addition, the groove width wi 3 of the groove is set to 5 mm, and the groove depth 87327.DOC -38- 200418632 D 1 3 is 8 mm. With the groove structure of the substrate, it is possible to easily separate the plate-shaped stone eve from the edge. The temperature of the substrate when immersed in the silicon melt is set to 450 ° C. The size of the obtained plate-like aspect of the first surface 135A is a diagonal length; 15; In addition, the average value of the thickness of the first surface 135A is approximately 0.35 mm. Using the above substrate, the drop rate of the plate-shaped silicon Is 2%. (Production of Solar Cell) Next, a solar cell was produced using the obtained plate-shaped silicon. The obtained plate-shaped silicon was cut with a laser, and a plate-shaped stone having a size of 100 mm × 100 mm was cut from the first side. Next, a trial coin is applied with sodium hydroxide. Next, a spin coating method was used to coat PSG (phosphite glass), followed by drying, to form a p-type substrate layer by thermal diffusion. Next, after removing the PSG film formed on the surface of the plate-shaped stone with fluoric acid, a nitrogen film was formed on the n + layer by a plasma CVD apparatus. Next, a back electrode and a p + layer were simultaneously formed on the surface on the back side of the solar cell by printing a sintered paste. Next, the sintered silver butterfly was printed to form an electrode on the light-facing side. Next, a portion of the silver electrode is subjected to a soldering treatment to complete a solar cell. &... Also: The battery 7A characteristic evaluation was performed on the obtained solar cell in the same manner as in the factory example. ^ Short from the average value of completed battery cells: 3 ratio 1: 3 ::: (::.), Open circuit voltage 584 (_), curve coefficient is 0751, (tenth embodiment)

87327.DOC -39 · 200418632 Except that the growth substrate shown in Figs. 14A and 14C and the temperature of the substrate during immersion were set at 300 ° C, the plate-shaped stone eve was manufactured in accordance with the method of the ninth embodiment. For the growth substrate used, the size of the first side of the substrate 145 A is 115 mm diagonal, the length of the second side of the substrate L146 is 40 mm, and the length of the third side of the substrate L 148 is 35 mm. The trench structure has a trench width W14 of 3 mm and a trench depth D14 of 2 mm. The width L142 A of the second surface 142 A of the obtained plate-shaped silicon was 2 mm; in addition, the average value of the thickness of the first plate 141A of the plate-shaped silicon was about 0.41 mm, thereby being easily peeled from the substrate. . With the above-mentioned substrate, the drop rate of the plate-shaped silicon is 2/0. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured result of the manufactured solar cell is calculated as an average value. The short-circuit current is 3105 (inA / cin2), the open-circuit voltage is 5 92 (mV), and the curve coefficient is 0.747. The efficiency is 13.7 (%. ). (Eleventh embodiment) Except that the growth substrate shown in Figs. 15A and 15C is used, and the temperature of the substrate during immersion is set to 200. (: In addition, other methods are used to manufacture plate-shaped silicon completely according to the method of the ninth embodiment. For the use of a growth substrate, the size of the first surface 155A of the substrate is a diagonal length of 115 mm. The width of the second surface of the substrate 156A is 2 mm, The length of the second surface of the substrate L156 is 40 mm, the width of the second surface of the substrate is 3, and the length of the third surface of the substrate Li58 is 35 mm. In addition, the angle between the first surface of the substrate and the second surface of the substrate is 150 degrees

87327.DOC -40, 200418632 ′ The angle between the second surface of the substrate and the third surface of the substrate is 80 degrees. The trench width W15 of the trench structure is 2 mm, and the trench depth is ^ mm. The width L152A of the second surface B2A of the obtained plate-shaped silicon is 2 mm; the average value of the thickness of the first surface 151A of the plate-shaped silicon is about 0.43 mm, so that it can be easily peeled from the substrate. The drop rate of the above-mentioned substrate 'plate-shaped stone eve was 2%. In addition, the solar cell was manufactured using the plate-shaped silicon, and the same cell characteristics evaluation as in the first embodiment was performed. As a result of measuring the manufactured solar cell, the average value was calculated. The short-circuit current was 31.77 (111 八 / (: 1112), the open-circuit voltage was 5 95 (11 ^), the curve coefficient was 0.749, and the efficiency was 14.2 (%). (Twelfth Embodiment) Except for using the growth substrate shown in Figs. 16A and 16C and the crucible temperature being set to 1410 ° C, plate silicon was manufactured in accordance with the method of the ninth embodiment entirely. Regarding the growth substrate used The size of the first surface of the substrate 165A is 115 mm diagonal. The width of the second surface of the substrate is 3 mm, the length of the second surface of the substrate li 66 is 45 mm, the height of the third surface of the substrate is 4 mm, and the length of the third surface of the substrate is B. 168 is 25 mm. In addition, the groove width W16 of the trench structure is 3 mm, and the groove depth D16 is 2 mm. The width L162B of the second surface 162B of the obtained plate-shaped silicon is 3 mm; The average value of the thickness of the first surface 161A is about 0.37 mm, so that it can be easily peeled off from the substrate. With the above substrate, the drop rate of the plate-shaped silicon is 1%. In addition, using the 87327.DOC -41 -200418632 The obtained plate-shaped silicon is used to manufacture solar cells, which is the same as the first embodiment Evaluation of the characteristics of the battery cells. The measured results of the manufactured solar cells are averaged. The short-circuit current is 32 0 3 (rnA / cm2), the open-circuit voltage is 5 86 (mV), the curve coefficient is 0.748, and the efficiency is 14.0 ( (Thirteenth embodiment) Except for using the growth substrate shown in FIG. 17A and FIG. 17C, the plate-shaped silicon was manufactured completely according to the method of the ninth embodiment. The length of the protrusion K17 LK1 7 was 85 mm, and the edge of the substrate The length lk 17a from the part to the protrusion is 15 mm, the width of the surface of the protrusion K1 7 is 3 mm, and the height of the protrusion HK17 is 4 mm. In addition, the surface of the first surface of the substrate is uneven: the interval between the convex portions is 丨 mm, and the concave portion The depth is 1 mm. The size of the first surface of the substrate 75a is 115 mm diagonal. The groove width W17 of the trench structure is 2.5 mm, and the groove depth D17 is 2.5 mm. The second surface of the obtained plate-shaped silicon is 172A. The width L172A is 3 mm; In addition, the average value of the thickness of the first surface of the plate-shaped silicon 171A is about 0.32 mm, so that it can be easily peeled off from the substrate. Using the above substrate, the drop rate of the plate-shaped silicon is 7%. In addition, using the obtained plate-shaped silicon to manufacture solar cells, Evaluation of the characteristics of the same battery cell as in the first embodiment. The measured results of the manufactured solar cells are averaged, and the short-circuit current is 30.9 (mA / cm2), the open-circuit voltage is 5 82 (mV), and the curve is The coefficient is 0.738, and the efficiency is 13.3 (%). (Fourteenth Embodiment) Except for using the growth substrate shown in FIG. 18A and FIG. 18C, the plate-shaped silicon was manufactured completely according to the method of the ninth embodiment. Protrusion κ 丨 8a and protrusion κ 丨 8b The length LK18 is 15 mm, and the length from the edge of the substrate to the protrusion LK18a is 15 87327.DOC -42- 200418632 mm, the distance between the tears in the dipping direction is 5 5 mm, and the protrusion κ 18 The surface width is 3 mm, and the height of the protrusion 突起 Κ18 is 4 mm. In addition, the surface of the first surface of the substrate is uneven: the interval between the convex portions is 1.5 mm, and the depth of the concave portion is 0.5 claws. The first surface of the substrate 185 has a diagonal length of 1150111. Groove structure groove The groove width W18 is 2.5 mm, the groove depth D18 is 2.5 mm, and the width of the edge portion is 3 mm. The width L182A of the second plate-shaped chip 182A obtained was 3 mm; in addition, the average value of the thickness of the first surface 181A of the plate-shaped silicon was about 0.38 mm, so that it could be easily peeled from the substrate. With the above substrate, the drop rate of the plate-shaped silicon is 8%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured result of the manufactured solar cell is calculated as an average value, the short-circuit current is 31.5 (mA / cm2), the open-circuit voltage is 584 (mV), the curve coefficient is 0.741, and the efficiency is 13.6 (%). (Fifteenth embodiment) Except for using the growth substrate shown in Figs. 19A and 19D, plate-shaped silicon was manufactured entirely in accordance with the method of the ninth embodiment. The width W1 96 of the second surface of the substrate 1 96A is 1 mm, and the angle between the first surface of the substrate 195A and the second surface of the substrate is 150 degrees. The angle between the second surface of the substrate and the third surface of the substrate is g0 degrees. The length of the protrusion K1 9 is LK1 9 is 15 mm, the shorter length from the edge of the substrate to the protrusion is 15mm, the width of the surface of the protrusion K19 is 3mm, and the height of the protrusion HK19 is 4mm. In addition, the first surface of the substrate is uneven: the interval between the convex portions is 0.5 mrn, and the depth of the concave portion is 0.3 mm. The size of the first side of the substrate 19 5 A is diagonally 87327.DOC -43-200418632 Π 5 mm. The trench width boundary 19 of the trench structure is 2 $ mm, and the trench depth D19 is 2.5 mm. The width L192A of the second surface 192A of the plate-shaped silicon obtained is 3 mm; in addition, the first surface of the plate-shaped silicon is 191 A The average value of the thickness is about 0.32 mm, whereby the substrate can be easily peeled off. With the above substrate, the drop rate of the plate-shaped silicon was 1%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured results of the manufactured solar cells were averaged. The short-circuit current was 301 (mA / cm2), the open-circuit voltage 577 (mV) 'curve coefficient was 0.748, and the efficiency was 13.0 (%). (Seventh embodiment of the tenth embodiment) Except for using the growth substrate shown in FIG. 20A, other methods are used to manufacture the plate-shaped silicon completely according to the method of the ninth embodiment. The angle between the first surface of the substrate 205A and the second surface of the substrate was 90 degrees, and the angle between the second surface of the substrate and the third surface of the substrate was 13 degrees. The width of the second surface of the substrate and the third surface of the substrate are both 3 mm. In addition, the surface of the first surface of the substrate 205 A is uneven: the interval between the convex portions is 2.0 mm, and the depth of the concave portions is 0.1 mm. The size of the first surface of the substrate 205a is 115 mm diagonally. The width L2O2a of the second surface 202A of the obtained plate-shaped silicon was 3 mm. 'In addition, the average value of the thickness of the first surface 201A of the plate-shaped silicon was approximately 0.32 mm', thereby being easily peeled from the substrate. With the above substrate, the drop rate of the plate-shaped silicon was 1%. In addition, a solar cell was manufactured using the known plate-shaped silicon, and the same cell characteristics evaluation as in the first embodiment was performed. The measured result of the manufactured solar cell is an average value, and the short-circuit current is 305 (mA / cm2) 'open circuit voltage.

87327.DOC • 44- 200418632 374 (mV), the curve coefficient is 0. 738, and the efficiency is 2 9 (%). (First Comparative Example) Except that the growth substrate shown in Figs. 21A and 21C was used, the plate-like silicon was manufactured entirely by the method of the ninth embodiment. For the growth substrates used, the size of the first surface of the substrate 2 1 5 A is 115 mm diagonal; the width of the second surface of the substrate and the third surface of the substrate are both $ mm. In addition, the groove width 21 of the groove structure is 2 mm, and the groove depth 1) 21 is 2111111. The length of the first surface length L 2 11A of the plate-shaped stone eve reached here is the diagonal length

H5 mm, the width L212A of the second surface 212A is 5 mm, and the width L213A of the third surface 213A is 2 mm; In addition, the average thickness of the first surface 211A of the plate-shaped silicon is approximately 0.36 mm, thereby enabling Easily peeled from the substrate. Using the above substrate, the drop rate of the plate-shaped silicon is 90%. The reason is that there is no normal vector that can form an anti-parallel or obtuse angle with the normal vector on the first surface of the plate-shaped silicon. (Second Comparative Example) Except for using the growth substrate shown in Fig. 22, plate-like silicon was produced entirely by the method of the ninth embodiment. The first surface of the substrate of the growth substrate is the same as that of the sixteenth embodiment, and is provided with a concave-convex process. The interval between the convex portions is 2.0 mm. The depth of the concave portion is 0.1 mm, and the surface size is a diagonal length of 11 5 mni. The width of the second surface of the obtained plate-shaped chop was 3 mm; in addition, the average value of the thickness of the first surface of the plate-shaped stone was about 0.35 mm. Using the above substrate, the drop rate of the plate-shaped silicon was 47%. In addition, the rate of cracking or cracking during cooling was 32%. In addition, the obtained plate-shaped silicon was used to manufacture a solar cell, and the same battery cell characteristics evaluation as that of the 87327.DOC -45- * beyer example was performed. The result of the foot measurement of the manufactured solar cell was calculated as an average value, and the short-circuit current was 25.9 (mA / cm) 'open-circuit voltage 552 (mV), the linear coefficient was 0 726, and the efficiency was 10.4 (/ 0). The reason for the low efficiency as a solar cell may be the residual stress in the plate-shaped silicon. In addition, "the implementation manners and examples of this disclosure are for illustrative purposes" are not limited to this. The scope of the present invention is not defined by the above description, but is shown in the patent + 4 &, and includes all changes equivalent to or within the scope of the Chinese patent. As described above, the use of the substrate of the present invention to manufacture plate-shaped silicon that fits the substrate can avoid the problem of falling of the plate-shaped silicon, and can supply the plate-shaped silicon in a stable and low-end manner. In addition, by adopting the groove structure of the above substrate, the plate-shaped silicon can be easily peeled off from the substrate, reducing deformation. In addition, #from this plate-shaped silicon is used in the manufacture of solar cells, and can supply low-cost, high-quality solar cells. [Brief Description of the Drawings] FIG. 1 is a schematic perspective view of a plate-shaped stone eve of the present invention. FIG. 2 is a schematic perspective view of a plate-shaped silicon according to the present invention. FIG. 3 is a schematic perspective view of a plate-shaped silicon according to the present invention. FIG. 4A is a schematic perspective view of a substrate for manufacturing a plate-shaped silicon according to the present invention; and FIG. 4B is a schematic perspective view of the substrate viewed from another direction. Fig. 5 is a schematic perspective view of a substrate for manufacturing a plate-shaped stone eve of the present invention. FIG. 6 is a schematic perspective view of a substrate for manufacturing a plate-shaped silicon according to the present invention. FIG. 7A is a schematic perspective view of a substrate for manufacturing a plate-shaped silicon according to the present invention; B7β 87327.DOC -46- 200418632 is an enlarged view of the part. 8A is a schematic perspective view of a substrate for manufacturing a plate-shaped silicon according to the present invention; FIG. 8B is a cross-sectional view of the plate-shaped silicon grown along VIIIB-VIIIB in FIG. 8A; FIG. 8C is a plate grown along VIIIC-VIIIC in FIG. 8A 8D is a cross-sectional view of the substrate along VIIIB-VIIIB in FIG. 8A; FIG. 8E is an enlarged view of the part. FIG. 9 is a schematic perspective view of a device for manufacturing a silicon plate according to the present invention. FIG. 10A is a schematic perspective view of a substrate for manufacturing plate-shaped silicon according to the present invention; FIG. 10B is a cross-sectional view of plate-shaped silicon grown along XB-XB in FIG. 10A; FIG. 10C is a plate grown along XC-XC in FIG. 10A 10D is a cross-sectional view of the substrate along XB-XB in FIG. 10A. FIG. 11A is a schematic perspective view of a plate-shaped silicon manufacturing substrate of the present invention; FIG. 11B is a cross-sectional view of the plate-shaped silicon grown along XIB-XIB in FIG. 11A; FIG. 11C is a plate grown along XIC-XIC in FIG. 11A FIG. 11D is a cross-sectional view of the substrate along XIB-XIB in FIG. 11A. FIG. 12A is a schematic perspective view of a plate-shaped silicon manufacturing substrate of the present invention; FIG. 12B is a cross-sectional view of the plate-shaped silicon grown along XIIB-XIIB in FIG. 12A; FIG. 12C is a plate grown along XIIC-XIIC in FIG. 12A 12D is a cross-sectional view of the substrate along XIIB-XIIB in FIG. 12A. FIG. 13A is a schematic perspective view of a plate-shaped silicon manufacturing substrate according to the present invention; FIG. 13B is a cross-sectional view of the plate-shaped silicon grown along XIIIB-XIIIB in FIG. 13A; FIG. 13C is a plate grown along XIIIC-XIIIC in FIG. 13A Sectional view of the shape of silicon. Fig. 14A is a schematic perspective view of a plate-shaped silicon manufacturing substrate of the present invention; Fig. 14B is a cross-sectional view of the plate-shaped silicon grown along XIVB-XIVB in Fig. 14A; Fig. 87327.DOC • 47-200418632 14C is a view along the middle of Fig. 14A A cross-sectional view of the XIVC-XIVC substrate. FIG. 15A is a schematic perspective view of a substrate for manufacturing plate-shaped silicon according to the present invention; FIG. 15B is a sectional view of the plate-shaped silicon grown along XVB-XVB in FIG. 15A; FIG. 15C is a view of the substrate along XVC-XVC in FIG. 15A Sectional view. FIG. 16A is a schematic perspective view of a substrate for manufacturing a plate-shaped silicon according to the present invention; FIG. 16B is a sectional view of the plate-shaped silicon grown along XVIB-XVIB in FIG. 16A; FIG. 16C is a view of the substrate along XVIC-XVIC in FIG. 16A Sectional view. FIG. 17A is a schematic perspective view of a substrate for manufacturing plate-shaped silicon according to the present invention; FIG. 17B is a cross-sectional view of plate-shaped silicon grown along XVIIB-XVIIB in FIG. 17A: FIG. 17C is a view showing the substrate along XVIIB-XVIIB in FIG. 17A A cross-sectional view of the growth state of plate-like silicon. FIG. 18A is a schematic perspective view of a plate-shaped silicon manufacturing substrate of the present invention; FIG. 18B is a cross-sectional view of the plate-shaped silicon grown along XVIIIB-XVIIIB in FIG. 18A: FIG. 18C is a view showing the substrate along XVIIIB-XVIIIB in FIG. 18A A cross-sectional view of the growth state of plate-like silicon. 19A is a schematic perspective view of a substrate for manufacturing a plate-shaped silicon according to the present invention; FIG. 19B is a sectional view of the plate-shaped silicon grown along XIXB-XIXB in FIG. 19A; 19D is a cross-sectional view of the substrate along XIXC-XIXC in FIG. 19A. 20A is a schematic perspective view of a substrate for manufacturing a plate-shaped silicon according to the present invention; FIG. 20B is a sectional view of the plate-shaped silicon grown along XXB-XXB in FIG. 20A; Sectional view of the shape of silicon. Figure 2 1A is a schematic perspective view of a comparative example substrate used for manufacturing plate-shaped shreds; Figure 218 is a cross-sectional view of the plate-shaped silicon grown along 乂 184 乂 18 in Figure 21; Figure 87327.DOC -48-200418632 21C is 20A is a cross-sectional view of a substrate along XXIC-XXIC. FIG. 22A is a schematic perspective view of a comparative example substrate for manufacturing plate-shaped silicon; FIG. 22B is a sectional view of the plate-shaped silicon grown along XXIIB-XXIIB in FIG. 22A. [Illustration of Symbols] 11A / rff -r- Brother V11A normal vector 12A second surface V12A normal vector 13A boundary line 21A first surface V21A normal vector 22B second surface L22B length V22B normal vector 23A boundary line 31A first surface V31 A normal vector 32A second surface L32A length V32A normal vector 33A boundary line 34A third plane L34A length V34A normal vector 87327.DOC -49-200418632 45A substrate first surface 46A substrate second surface L46A width 47A boundary line C4 substrate 55A substrate substrate One side 56B substrate second side H56B height L56B width C5 substrate 65 A substrate first side 66A substrate second side L66A width 68A substrate third side H68A Nando C6 substrate 75A substrate first side V75 normal vector 76A substrate two sides V76 Normal vector L76A width 78A Third surface of substrate V78A Normal vector L78A width

87327.DOC -50- 200418632 C7

81 A

82A

82C

L82A

L82C

83A

L83A S8

85A

86A L86A > L88A W86A, W88A 88A C8 93 94 95 96 97 98 99

101A

102A 87327.DOC substrate first side second side second side width width third side width plate-shaped silicon substrate first side substrate second side length width substrate third side substrate crucible dream melting liquid heater heater crucible stage Insulation material hanging pan lifting shaft fixed to the base shaft first surface second surface -51-200418632 102C second surface L102A width L102C width 103A third surface L103A width S10 plate shape 105A first surface of the substrate L106A, L108A Length W106A width CIO substrate 111A first surface 112A second surface L112A length 113A third surface 113C third surface L113A width L113C width 114A fourth surface Sll plate-shaped silicon 115A substrate first surface L116A, L118A length W116A, W118A width Cll substrate 121 A first side

87327.DOC -52- 200418632 L121A length 122B second surface 123A third surface L123A, L123C width S12 plate-shaped silicon 125A substrate first surface L126A, L128A length W126A width H128A south degree C12 substrate 131A first surface S13 plate-shaped silicon 135A Edge of the first surface of the substrate 135a 136A Edge of the second surface of the substrate 136a L136A, L138A length W126A width H128A height C13 substrate F13 groove structure 141 A first surface 142A second surface L142A length 87327.DOC -53- 200418632 143A Third side S14 plate silicon 145A substrate first surface 146A substrate second surface L146A, L148A length C14 substrate 151A first surface 152A second surface L152A length 153A third surface 154A fourth surface S15 plate silicon 155A substrate first surface L156A, L158A length C15 substrate F15 groove structure 161A first surface 162B second surface L162B width 163A third surface S16 plate-shaped silicon 165A substrate first surface L166A, L168A length C16 substrate

87327. DOC -54- 200418632 F16 groove structure 171 A first surface V171 A normal f 172A second surface V172 normal vector L172A length 175A substrate first surface 176A substrate second surface C17 substrate F17 groove structure 181A first surface L182A length 185A substrate first surface C18 substrate S18 plate silicon F18 trench structure 191A first surface 195A substrate first surface C19 substrate S19 plate silicon F19 trench structure 201A first surface L201C, L202A length 205A substrate first surface

87327.DOC -55-200418632 C20 substrate S20 plate shape 211A first surface L212A, L213A length 215A substrate first surface C substrate F21 groove structure 221A first surface 222A second surface 225A substrate first surface C22 substrate 87327.DOC -56-

Claims (1)

200418632 Pick up and apply for patent Fangu: 1. A plate-shaped chip, which is characterized in that the substrate is immersed in a silicon melt to form on the surface of the substrate, and the plate-shaped silicon has: The other surface is formed continuously on the first surface; the other surface includes at least one surface whose normal vector forms an anti-parallel or obtuse angle with the normal vector of the first surface, and the first surface and other surfaces form a joint with the substrate. . 2. The plate-shaped silicon according to item 丨 of the patent application, wherein the first surface is formed on a substantially flat surface. 3. The platy silicon as described in the first item of the patent application, in which the other surfaces that are continuous with the first surface are formed in a rough plane. 4. A method for manufacturing plate-shaped silicon, characterized in that the surface of the substrate is immersed in a silicon melt, and then the substrate is pulled away from the silicon melt to grow plate-shaped silicon on the surface of the substrate. A method for manufacturing plate-shaped silicon, and the substrate includes: a first surface of the substrate that forms the first surface of the plate-shaped silicon; and another surface of the substrate that is continuous with the first surface of the substrate to form a plate-shaped silicon surface that includes at least one The normal vector of the other surface of the substrate forms an anti-parallel or obtuse angle surface with the normal vector of the first surface of the substrate. 5. The method for manufacturing plate-shaped silicon according to item 4 of the scope of patent application, wherein a groove structure is formed on the peripheral edge portion of the first surface of the substrate by at least two grooves parallel to the direction of the silicon melt immersion. 6. The manufacturing method of the plate-shaped crystal according to item 4 of the patent application, wherein the other surface continuous with the first surface of the plate-shaped silicon is formed by the front part of the substrate in the forward direction. 7. A kind of solar cell 'is characterized by being manufactured by using the first side of the oldest plate-shaped Shi Xi in the scope of patent application. 87327.DOC 200418632 8 · —A kind of plate-shaped silicon substrate, which has a first surface of a substrate forming a first surface of plate-shaped silicon and a substrate other surface continuous with the first surface of the substrate to form a plate-shaped silicon surface. The normal vector including at least one other surface of the substrate and the normal vector of the first surface of the upper substrate form an anti-parallel angle. 9. The plate-shaped substrate for fabrication of item 8 of Rushen 44 Lifan 11, wherein a groove structure is formed on the periphery of the substrate and the first surface with at least two grooves parallel to the direction of the silicon melt immersion. The substrate for sheet manufacturing in the first range of the patent application file No. 10.t, wherein the evaluation structure is formed along the first peripheral edge portion of the substrate. Structure 87327.DOC