TWI231261B - Silicon plate, method for producing silicon plate, solar cell and substrate for producing silicon plate - Google Patents

Abstract

The invention provides a low-cost silicon plate which enhances the yield of silicon plate without conducting any slicing step. The silicon plate is formed on the surface of the substrate by dipping a substrate in a silicon molten solution. The silicon plate has one surface as a main surface, and another surfaces consecutively formed on the first surface. Said another surfaces have at least one surface, of which the normal vector is anti-parallel to or forms an obtuse angle with the normal vector of said first surface, and form an engaging shape with said substrate to prevent the silicon plate from dropping. Further, a low-cost solar cell is provided by means of applying said silicon plate to a solar cell.

Description

1231261 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a plate-shaped silicon, a method for manufacturing the plate-shaped silicon, a solar cell, and a substrate for manufacturing a plate-shaped silicon. The present invention specifically refers to plate-shaped silicon on which the substrate is immersed in a silicon melt, and the plate-shaped silicon has: a first surface, which crystal grows on a main surface of the substrate immersion; and at least one other surface The surface is continuous with the first surface and crystal grows on the side surface of the substrate. The normal vector of the other surface and the normal vector of the first surface are anti-parallel or at an obtuse angle. A fitting portion is formed with the substrate to prevent the plate-shaped silicon from falling off the substrate during the process of manufacturing the plate-shaped silicon. Furthermore, the present invention also relates to a method for producing plate-shaped silicon, a solar cell using the plate-shaped silicon, and a substrate for producing plate-shaped silicon. [Previous technology] In the past, polycrystalline silicon was produced by injecting a silicon melt into a mold, and then cutting the polycrystalline ingot that was opened. Therefore, there has been silicon during the cutting process. The problem of large losses. In order to eliminate the dicing loss and mass-produce polycrystalline silicon wafers at low cost, the present inventors have developed a manufacturing method capable of mass-producing plate-shaped silicon at low cost with a dicing process (Japanese Patent Laid-Open No. 2001-247396): In this manufacturing method, a substrate melt is impregnated with a raw material melt to grow a plate-like dream on the substrate. [Summary of the invention] The plate shape of the present invention is characterized by a plate-shaped silicon formed on the surface of the substrate by immersing the substrate in a silicon melt, and the plate-shaped silicon has a first surface as a main surface. And other surfaces formed continuously with the first surface; the other surface includes at least one

87327.DOC 1231261 The normal vector of the plane is a plane that is antiparallel or obtuse to the normal vector of the first plane, and the first plane and the other planes form a joint with the substrate. It is preferable that the first surface and the other surfaces continuous with the first surface be substantially flat. In addition, the present invention is a method for manufacturing plate-shaped silicon, which is characterized in that after the surface of the substrate is immersed in a silicon melt, the substrate and the silicon melt are separated, so that a film-like plate-shaped silicon is grown on the surface of the substrate, whereby Manufacturing method of forming the above-mentioned plate-shaped silicon 'The substrate has: a first surface of a substrate on which a first surface of a plate-shaped stone is formed; and another surface of the substrate which is continuous with the first surface of the substrate and a plate is formed thereon The other surface of the substrate includes at least one surface whose normal vector is antiparallel or obtuse with the normal vector of the first surface of the substrate. Here, it is preferable that a groove structure is formed on the edge portion of the first surface of the substrate by having at least two grooves parallel to the immersion direction of the silicon melt. In the method for manufacturing plate-shaped silicon, it is preferable that the other surface of the plate-shaped silicon that is continuous with the first surface is formed at the front end portion of the substrate in the advancing direction. Furthermore, the present invention is a solar cell, which is manufactured by using the first surface of the above-mentioned plate-shaped silicon. In addition, a substrate for manufacturing plate-shaped silicon according to the present invention is characterized by having: a first surface of a substrate on which a first surface of plate-shaped silicon is to be formed; and another surface of the substrate which is continuous with the first surface of the substrate and on which A plate-like silicon surface is formed, and the laughing plate includes at least one surface whose normal vector is antiparallel or obtuse with the normal vector of the first surface of the substrate. Here, the edge portion of the first surface of the substrate of the substrate is preferably formed with a groove structure having at least two groove patterns parallel to the direction in which the molten solution is impregnated. The trench structure is formed along the

87327.DOC ^ 31261 is preferably formed with 3 grooves. When the conventional plate-shaped silicon manufacturing method is used to manufacture the plate-shaped silicon, there is a problem that the plate-shaped stone falls inside and outside the hanging pot. The invention forms a plate-shaped silicon grown on the surface of a substrate by forming the substrate on the other surface of the substrate including at least one surface whose normal vector is anti-parallel or obtuse to the normal direction of the first surface of the substrate. The fitting part, so as to avoid the plate-shaped silicon from falling off from the substrate during manufacturing. In addition, the plate-shaped silicon will not only grow on the plate-shaped silicon growth surface of the substrate, but also on the front, back, and sides of the growth substrate. Therefore, during the cooling process after the plate-shaped silicon is grown, the plate-shaped silicon and the growth substrate material The difference in expansion coefficients and the time difference in temperature change may cause residual stress in the slab-like stone surface. However, the above problems can be solved by forming protrusions on the surface of the substrate or using a trench structure. And reduce the occurrence of cracks in plate-like silicon. [Embodiment] The present invention relates to plate-shaped silicon, a method for producing plate-shaped silicon, a solar cell using the plate-shaped silicon, and a substrate for producing plate-shaped silicon. (Slab-shaped silicon) The invention is a plate-shaped silicon formed on the surface of the substrate by immersing the substrate in a silicon melt, and the plate-shaped silicon has a first surface as a main surface and is continuously formed with the first surface. The other side includes at least one side, and the normal vector of at least one side is anti-parallel or obtuse with the normal vector of the first side and the normal vector of other sides, and the first side and the other side form the substrate. The fitting department. The characteristics of the plate-shaped silicon according to the present invention are described below with reference to FIG. 1. The plate-shaped silicon S1 according to the present invention has an L-shaped section at its end, and is composed of a first surface 11A and a second surface 12A as the other surface, and the first surface 11A and the second surface.

87327.DOC 1231261 The surface 12A is continuously formed by folding at the boundary line 13Af. Here, the angle formed by the normal direction 1V11A on the first plane and the normal vector on the second plane 28 is an obtuse angle. In the present invention, the normal vector V11A & V12A is used to define the "direction *" in the continuous surface, that is, the "in & meaning vector #" If it is a surface connected with a plate-shaped broken substrate, the two vectors Both are selected from the normal vectors on the surface that is in contact with the substrate. In this way, the angles of the normal vectors ¥ 1 丨 eight and ¥ 12eight can be defined. The present invention < normal vectors are anti-parallel means that the two normal vectors are oriented in opposite directions. In addition, the rough plane of the present invention includes those having unevenness on the plate-like silicon surface. For example, the rough plane may include small irregularities, plate thickness errors, or warpage. The small unevenness here includes unevenness of about 200 μm on the surface of the plate-shaped silicon and unevenness with good regularity. In addition, warping includes warping up to about 300 μm as a whole. In addition, the A character attached to the component symbol in FIG. 1 is used to indicate that the component symbol portion is a rough plane. In the present invention, the normal vector on the first surface and the normal vector on the second surface which is a continuous surface thereof are anti-parallel or obtuse. Here, the angle formed in the normal direction is 120 °. Above 18〇. The following is better. In FIG. 1, the angle formed by the normal direction f is the same as the angle α formed by the first surface and the second surface. Although the angle α is at 90 °. The above is below 120. It can also achieve the desired purpose, but if set to 120. In the above case, the effect can be further increased to increase the production capacity. In addition, in the case where a plate-shaped stone is produced by immersing a growth substrate in a melt to be described later, the angle α is 180. For the above surfaces, additional force will need to be applied in order to be able to remove the plate-shaped silicon from the substrate, which may cause problems such as damage to the plate-shaped silicon originally available, or damage to the growth substrate.

87327.DOC 1231261 In Fig. 1, although the first surface 11A and the second surface 12A shown are both planes, they are not limited to planes. The obtained plate-like silicon is at least a rough plane as a product. That is, it is also possible that the rough planar portion of the above-mentioned plate-shaped silicon is uneven or warped. In order to use the obtained plate-shaped silicon to manufacture a planar device such as a solar cell, the plate-shaped silicon is preferably a flat one. Next, Fig. 2 is a schematic perspective view of a plate-shaped silicon in another embodiment of the present invention. In FIG. 2, the plate-shaped silicon S2 has a j-shaped cross section at the end, and is composed of a first surface 21A and a second surface 22b as another surface. The first surface 21A and the second surface 22B are The boundary line 23A is continuously formed by bending. In the figure, the normal vector V21A on the first surface 21A and the normal direction V22B on the second surface 22B form an obtuse angle. Here, the normal vectors V21 and V22B are the normal vectors used to fix the money on the continuous surface. On the plate-shaped silicon having the above-mentioned shape, when the defined positions of the normal vectors V21A and V22B are the edge portions of the boundary line 23A, the angle formed by the normal direction I $ sometimes becomes an acute angle. However, the angle formed by at least a part of the normal vector in the present invention may be an obtuse angle or anti-parallel: that is, a part including the angle formed by the normal vector is allowed to be an acute angle. In other words, the angle formed by the normal vector is obtuse or anti-parallel. The B character attached to the element symbol in FIG. 2 indicates that the shape is a schematic plane. In Figures 1 and 2, the first and second sides of the slab-shaped stone eve are continuous perspective views of the slab in which the two sides are continuous. However, in the slab-shaped treasure of the present invention, the number of other faces must be at least 1. Surface, and may be one surface or more. In particular, in order to stably engage the joint portion on the substrate to improve the productivity, it is better to construct it separately. In FIG. 3, the plate-shaped silicon S3 of the present invention has a cross-sectional shape at an end portion [

87327.DOC 1231261, and the first plane 31A, the boundary 33A, the second plane 32A, and the second plane 3 4 A are formed consecutively. One of the normal vectors corresponding to the three faces is V31A, V32A, and V34A, and the vector V31A on the first face is antiparallel to the vector V34A on the third plane: in other words, the normal vector on the continuous face is in the opposite direction . As described above, the three-side structure is formed by the first surface 31A, the second surface 32A, and the third plane 34A. The above-mentioned portion forms a fitting portion with the substrate, even if the substrate is immersed in the melt to manufacture the plate. In the case of silicon-like silicon, the production capacity can be greatly increased. Here, the other surfaces are composed of the second surface 32A and the third surface 34A. (Substrate) Next, a substrate used for manufacturing the above-mentioned plate-shaped silicon will be described. The plate-shaped silicon S1 to S3 shown in Figs. 1 to 3 can be manufactured using the substrates C4 to C6 shown in Figs. 4, 5, and 6, respectively. That is, the plate-shaped silicon S1 of FIG. 1 can be easily manufactured with the substrate C4 of FIG. 4A. 4A and 4B are schematic perspective views of the substrate viewed from different angles, respectively. The first surface 11A of the plate-shaped silicon in FIG. 1 is grown on the first surface 45A of the substrate C4, and the second surface 12A is grown on the second surface 46A of the substrate formed by the boundary 47A. Similarly, the first surface 21A of the plate-shaped silicon S2 in FIG. 2 is grown from the first surface 55A of the substrate C5 of FIG. 5, and the second surface 22B is grown from the second surface 56B of the substrate constituting the other surface of the substrate. . In addition, the first surface 3 1A of the plate-shaped silicon S3 in FIG. 3 is grown from the first surface 65 A of the substrate C6 of FIG. 6, the second surface 32A is grown from the second surface 66A constituting the substrate, and the third surface 34A is grown from the third surface 68A of the substrate. As mentioned above, by changing the shape of the substrate, the plate-like seconds obtained will form different shapes of joints to prevent the plate-like stone eve 87327.DOC -11-1231261 from falling, which will help increase productivity. In the present invention, the shape of the plate-shaped silicon and the substrate for manufacturing the plate-shaped silicon do not need to correspond to each other; if the shapes completely correspond, the plate-shaped silicon and the substrate will be in close contact, so it will be difficult to use the obtained plate. Silicon-like silicon to make devices such as solar cells. On the other hand, the situation of the substrate is the same as described above. For a plate-shaped silicon manufacturing substrate having a first surface of the substrate and a substrate other than the first surface of the substrate, the substrate is characterized in that the other surface of the substrate includes at least one surface whose normal vector is opposite to the first surface normal vector. Parallel or obtuse faces. In other words, among the substrates for manufacturing plate-shaped silicon in which at least the first surface and the other surface are continuously formed, the normal vector on the first surface of the substrate having the above-mentioned plate-shaped silicon growth and the normal vector of the substrate on which the other surface is grown Anti-parallel or obtuse angles: That is, in the plate-shaped silicon manufacturing substrate of the present invention, although the other surface of the substrate is composed of a plurality of surfaces, at least one of the plurality of surfaces has a normal vector system and the above. The normal vector of the first surface of the substrate is obtuse or anti-parallel. FIG. 7A is a schematic perspective view of a substrate of the present invention. In the figure, the normal vector V75A of the first surface of the substrate is ¥ 78, the normal vector V76 of the second surface of the substrate 7676, and the normal vector V78A of the third surface of the substrate 78A. The normal vectors V75A and V78A form an obtuse angle. On the one hand, although the angle formed by the normal vectors V75A and V76A is an acute angle, the plurality of normal vectors constituting the other surfaces of the substrate may include anti-parallel or obtuse surfaces. In FIG. 7B, the angle γ7A formed by the substrate first surface 75A and the substrate second surface 76A is an obtuse angle, and the angle γ7B formed by the substrate second surface 76A and the substrate third surface 78A is an acute angle. In addition, the shape of the substrate for manufacturing a plate-shaped silicon according to the present invention may be as shown in the schematic perspective views of FIGS. 8A and 87327.DOC -12-12261261, FIG. 10A, FIG. 11A, and FIG. 12A. FIG. 8A is a schematic perspective view of the substrate S8 for manufacturing the plate-shaped silicon S8 of FIGS. 8B and 8C. FIG. 8D is a schematic cross-sectional view of the substrate of FIG. 8 along the ¥ 11 ratio 々11 汨; A partially enlarged view. In addition, FIG. 8B is a schematic cross-sectional view of the plate-shaped silicon formed on the surface of FIG. 8d; FIG. 8C is a schematic cross-sectional view of the plate-shaped pieces formed on the cross-section of the substrate along the line VIIIC-VIIIC. In 8E, the angle Ysa formed by the substrate first surface 86A and the substrate third surface μα is an obtuse angle, and the angle formed by the substrate third surface 88A and the substrate fourth surface 89A is also an obtuse angle. Figure 8B of the plate-shaped silicon The cross-sectional shape is approximately the same as that of the plate-shaped silicon when the substrate is manufactured in FIG. 6, and has a three-sided structure of a first surface 81A, a second surface 82 a, and a second surface 83 A. The cross-sectional shape of the plate-shaped silicon in FIG. 8C It is a double-sided structure with a first surface 81A and a second surface 82C: that is, with respect to a piece of plate-shaped silicon and T, through the combination of the plate-shaped silicon and the substrate of the present invention, different d-plane shapes can be formed. & In plate silicon, if some sections have a double-sided structure, other sections can still have a three-sided structure. In this figure In the figure, the plate-shaped chip having the first surface, the second surface, and the second surface is shown by a planar structure, but it can also be a curved surface structure. Figure tf shows a plate-shaped silicon with a three-sided structure in section; Is a plate-shaped silicon with a four-sided structure in cross-section; FIG. 12B shows a plate-shaped silicon with a three-sided structure in cross-section and a curved shape in one of its surfaces. Using the above-mentioned substrate with a plurality of surfaces, it will be possible to achieve higher productivity. A plate-shaped stone is manufactured. FIG. 10A is a schematic perspective view of a substrate for manufacturing plate-shaped silicon SiO shown in FIG. 10 and FIG. 10D. FIG. 10D is a schematic cross-section of the substrate shown in FIG. 10A along XB-XB.

87327.DOC -13- 1231261 side view. In addition, FIG. 10B is a schematic perspective view of the plate-shaped silicon formed on the surface of FIG. 10D. Similarly, FIG. 10C is a schematic cross-sectional view of the plate-shaped silicon formed along the xC-X (^, j plane of the substrate of FIG. 10A. In FIG. 10B, the first plane 10a and the second plane ι are formed. 2A and the third surface 1038 are composed of three surfaces, the first surface 10a is continuous with the second surface 102A to form an angle α10. In this figure, the first surface 101a and The normal vector of the second surface 102 A forms an obtuse angle. Here, the first surface 101 A is formed on the first surface 105 a of the substrate. In addition, in FIG. 10C, the first surface 101A, And the second surface i02C. The first surface 101A is continuous with the second surface 102C to form an angle βί °. In FIG. 10B, the length L101A of the first surface is longer than the length L102A of the second surface. The length L103A of the third side is long: it is used to apply the plate-shaped stone formed on the first side to a device such as a solar cell. The length L101A applied to the product is set to the longest. That is, by setting the area of the first surface 101A to the maximum, the production efficiency can be improved.

In addition, the length of the first side L101A is preferably 50 mm or more, and more preferably 100 mm or more. The reason is that the length of the first side is longer than 108, and the plate-like silicon obtained by one dipping The larger, the less material loss, the more able to provide low-cost plate silicon. Similarly, the length L101A of the first surface in FIG. 0c is preferably longer than the length L102C of the second surface. The length of the second side L102A is preferably 1 mm or more and 20 mm or less; and more preferably 2 mm or more and 15 mm or less. The reason is that the length A of the second side will affect the production capacity of the plate-shaped silicon. Have a considerable impact. When the length of the second side is 1 mm to 87327.DOC • 14-1231261, 'even if the plate-shaped stone eve S10 grows', there is still the risk of falling from the substrate c into the mine easily; if the length is more than 1mm, the plate-like ... The first surface HHA and the second surface ii) 2A are in a state of covering the substrate, reducing the risk of falling. The angle formed by the first-side UH A of the plate-shaped stone and the second-side surface 102A also has a great impact on the situation where the plate-shaped silicon S10 drops: that is, the smaller the angle, the plate-shaped silicon sio will The greater the chance of staying at e aiQ to 80. Following ^ 佳 °, and 10. Above 60. The following is better. 1〇. In the following, the substrate before ci0 also has a pointed shape, which is not suitable for the shape that is easily affected by the heat of the melt. The reason is that when the front end portion is sharp, it is affected by the heat of the melt. It will be difficult to recycle the substrate. In addition, to prevent the plate-like silicon from falling, the angle β10 formed by the first surface 101A and the second surface 102c will also affect the reason, and the reason is that when the figure is the part of the angle 0 ^ 10 When the anger is released, the part shown as the angle β⑺ functions as the second hook. For this reason, it is preferable that the angles al0 and β10 are different, and it is more preferable that the angle 061 is smaller than the angle βm. In addition, when a plurality of hooking portions are provided in order to further suppress the occurrence of dropping, it is preferable that the hooking portions having a small angle formed by a plurality of surfaces are placed in the center of the substrate. The substrate for manufacturing a plate-shaped silicon according to the present invention may have a shape as shown in a schematic perspective view of FIG. 11A. FIG. UA is a schematic perspective view of a substrate C11 for manufacturing the plate-shaped silicon S11 of FIGS. 11B and 11C; FIG. 11D is a schematic cross-sectional view of the substrate of FIG. 11A along XIB-XIB. In addition, FIG. 11B is a schematic cross-sectional view of the plate-shaped silicon formed on the surface of the substrate of FIG. 11D. Similarly, FIG. 11C is a view of the plate-shaped silicon formed on the cross-section of the substrate of FIG. Figure 87B is a schematic cross-sectional view. The plate-shaped stone shown in FIG. 11B is composed of the first surface η 1A and the second surface 112A, the third surface 113A, and the fourth surface U4A as other surfaces. It consists of four faces. Here, 'refers to the case where the normal vector of the first face 111 A and the third face 113 A forms an obtuse angle. In FIG. 11B and FIG. 11C, the length LU1A of the first face is also longer than that of the second face. The length L112A and the length L113 A of the third surface are preferably longer. Here, the length of the first surface L111A corresponds to the length of the first surface 115 of the substrate C11. As described above, the first surface ii having an obtuse angle on the normal vector Between 1A and the third surface 113A / 113C, there may be another surface U2A. In addition, the substrate for manufacturing the plate-shaped silicon of the present invention may have a shape as shown in a schematic perspective view of FIG. 2a. FIG. 12A is FIG. 12B And FIG. 12C is a schematic perspective view of the substrate C12 for manufacturing the plate-shaped stone eve S12; FIG. 12D is a schematic cross-section of the substrate of FIG. 12A along XIIB-XIIB In addition, FIG. 12B is a schematic perspective view of the plate-shaped silicon formed on the substrate surface of FIG. 12D; similarly, FIG. 2C is a schematic cross-section of the plate-shaped silicon formed on the cross-section of the substrate of FIG. 12A along the XIIC-XIIC The plate-shaped silicon system shown in FIG. 12B includes a first surface 12ia, a second surface 122B, and a second surface 123A of other surfaces, and is composed of three surfaces in total. In this figure, the first surface 121 A and The normal vector of the second surface 122B forms an obtuse angle. Because the second surface 122B has a curved surface structure, although there can be a plurality of normal vectors, in this figure, by using the side near one side of the third surface as the starting point of the vector, it is possible to Forms a pure angle with the normal vector of the first surface 121A. So generally, if the normal vectors of both the first and other surfaces are to form an obtuse angle, the second surface 122B can be a flat surface or a curved surface. Here, the first The surface length L121A corresponds to the length of the first surface 125A of the substrate 8727.DOC -16-1231261 of the substrate C12. Furthermore, the plate-shaped silicon substrate of the present invention is shown in FIG. 13 to FIG. It is better to have a trench structure on the edge of the substrate. Figure 丨 3 A is the substrate C1 for manufacturing silicon S13 3 is a schematic perspective view; FIG. 13 (:: is a cross-sectional view of a state where silicon S13 is manufactured on the substrate C13 of FIG. 13A along XIIIC-XIIIC. Here, the first surface 1 3 1A is a trench located on both sides Structure F 1 3 is separated from its edge portion. FIG. 13B is a cross-sectional view of silicon S1 3 formed on substrate C13 of FIG. 13A along XIIB-XIIB. In the substrate of FIG. A groove structure F13 is formed on one side 136A, and its shape k is the same as that of the substrate shown in FIG. 8. The trench structure ρ 13 mainly includes: as a part of the product, the second portion 135a on the first surface of the substrate 135A and the second portion 136A on the substrate 136A are easily separated in seconds. The part. Since the silicon grown on the edge portion of the trench structure F13 can also be easily peeled off, it not only helps the continuous production to proceed smoothly, but also suppresses the quality difference of the vibrational breakage as a product. Here, the function of the trench structure F13 will be briefly described. Because the surface tension between the melted liquid and the substrate is large, as shown in FIG. 1C, although the melted liquid will contact the first surface 135A and the edge portion 135a of the substrate, the melted liquid does not touch The size of the trench structure F13. For this reason, the plate-like pieces formed by crystal growth on the surface of the first surface 1 3 5 A of the substrate and the silicon at the edge portion of the substrate crystallized on the surface of the edge portion 135a are separated by the trench structure F 1 3. In addition, the groove structure F13 can have any shape as long as it can separate the stone on the edge of the substrate from the debris on the first surface: 87327.DOC -17-! 231261 The cross-sectional shape can be rectangular, trapezoidal, or triangular. Especially based on the ease of processing grooves, a rectangular cross-sectional shape is preferred. In addition, the groove width W13 of the groove structure F13 is preferably greater than or equal to 1 mm and less than or equal to 20 mm, and more preferably greater than or equal to 2 mm and less than or equal to 10 mm. The reason is that when the 'groove width W13 is less than 1 mm At this time, the chip on the edge of the substrate cannot be reliably separated from the silicon on the first surface; when the trench width W13 exceeds 20, the utilization efficiency of the material will deteriorate. In addition, the groove depth of groove structure FU 13 is preferably 1 mm to 10 mm, and more preferably 2 mm to 5 mm. The reason is that when the groove depth D13 is less than 2 mm , The silicon on the edge of the substrate and the silicon on the first side cannot be surely separated; when the trench depth Dn exceeds 10 mm, not only may the silicon fill the trench structure, but also the substrate may be damaged due to the deterioration of the substrate strength Risk. However, when the size of the substrate becomes larger, the silicon on the first side and the silicon on the edge of the substrate will be harder to separate. In addition, the surface tension of the silicon melt, the environment during the growth of Shi Xi, and the moving speed of the substrate The growth condition of the plate-shaped silicon also changes the separation state, so it is necessary to appropriately adjust. As shown in FIG. 13A, the trench structure includes three trenches: two trenches along the substrate immersion direction, and one trench disposed at an angle with the above-mentioned trenches on the rear portion of the immersion. . In addition, in terms of the trench structure shown in FIG. 1A, the first surface is opened on the 3rd surface and becomes c-shaped, and most of the solar cells are square or rectangular; ’So you look at this shape in terms of the efficiency of the material. In addition, in order to improve design, there is no problem even if four or more grooves are formed. That is, the shape of the obtained plate-shaped silicon may be a pentagon and a hexagon. In FIGS. 14 to 16, a substrate groove structure is also provided, which can be made into a plate shape.

87327.DOC -18- 1231261 The part of Shixi products and the edge part are separated from each other. FIG. 14A is a schematic perspective view of a substrate C14 for manufacturing silicon S14; FIG. 14C is a cross-sectional view taken along XIVC-XIVC in FIG. 14A; FIG. 14B is formed on the substrate C14 in FIG. 14A along XIVB-XIvB in FIG. 14A A cross-sectional view of the plate-shaped silicon S14. The substrate of FIG. 14A has the same shape as that of the substrate of FIG. 10A except that the trench structure F14 is formed on the first surface 145A and the second surface 146A of the substrate. FIG. 148 is a cross-sectional view of a plate-shaped silicon S14 composed of three surfaces of a first surface 1418, a second surface 1428, and a third surface 1438. In this figure, an obtuse angle is formed between the normal vector of the first surface 141A and the normal vector of the second surface 142A. In this case, the trench structure is formed by three trenches, which can separate the silicon on the edge portion of the substrate from the first surface 141. At this time, the second surface 1428 and the third surface 1438 will exist in the position sandwiched by the trench structure: that is, the trench structure F14 will be disposed in such a way that it will not affect the first surface 14A and the second surface. On the surface 142a and the third surface 143A. In this way, the area separated by the trench structure can be peeled off by the substrate C 14 and can be easily used as a product. Here, the groove width W14 and the groove depth 014 of the groove structure may be the same as the above-mentioned groove structure. FIG. 15A is a schematic perspective view of a substrate C15 for manufacturing a plate-shaped silicon S15; FIG. 15C is a cross-sectional view taken along a line (:-and ¥ (:) in FIG. 15; FIG. 158 is a view along the substrate C15 in FIG. 15 Sectional view of the plate-shaped silicon S15 formed by XVB-XVB of 15A; the substrate of FIG. 15A has the same structure as the substrate of FIG. 11A except that a trench structure F15 is formed on the first surface i55A and the second surface 156A of the substrate. shape.

87327.DOC -19- 1231261 FIG. 15B is a cross-sectional view of a plate-shaped silicon S 1 5 composed of four surfaces: a first surface 151A, a second surface 152A, a third surface 153A, and a fourth surface 154A. In this figure, an obtuse angle is formed between the normal vector of the first surface 151A and the normal vector of the third surface 153A. As shown in FIG. 1C, the cross-sectional view of the trench of the trench structure F15 is triangular. Even with the above-mentioned cross-sectional shape, it can still play a sufficient function as a trench structure, so that the plate-shaped silicon can be separated from the edge portion and the first surface. Even if a groove structure F1 5 having a triangular cross section is used, the groove width W1 5 and the groove depth D15 can be the same as those of a rectangular cross section. FIG. 16A is a schematic perspective view of a substrate C16 for manufacturing a plate-shaped silicon S16; FIG. 16C is a cross-sectional view taken along XVIC-XVIC in FIG. 16A; FIG. 16B is formed on the substrate C16 in FIG. 16A along XVIB-XVIB in FIG. 16A A cross-sectional view of the plate-shaped silicon S16. The substrate of FIG. 16A has the same shape as the substrate of FIG. 12A except that a trench structure F16 is formed on the first surface 165A of the substrate. FIG. 16B is a cross-sectional view of a plate-shaped silicon composed of three surfaces including a first surface 161A, a second surface 162B, and a third surface 163A. In the figure, the normal vector of the first surface 16 1A and the normal vector of the second surface 16 2 B form a pure angle. Because the second surface 162B has a curved surface structure, although there can be a plurality of normal vectors, in this figure, by using one side near the third surface 163 A as the starting point of the vector, it can be formed with the normal vector of the first surface 161A. Obtuse angle. As shown in FIG. 16C, the cross-sectional view of the trench structure F16 is trapezoidal. Even with the above-mentioned cross-sectional shape, it can still fully function as a trench structure, so that the plate-shaped silicon at the edge portion can be separated from the first surface. Even if a groove structure F16 having a trapezoidal cross section is used, the groove width W16 and the groove depth D16 can adopt the above-mentioned dimensions in the same manner as a rectangular cross section. However, when the substrate Cl6 with 87327.DOC -20-1231261 having the trapezoidal groove structure F16 shown in FIG. 16C is used, the substrate uses a substrate with a rectangular groove structure, and the groove width of the groove structure X = W1 6 It is better to be narrower. As shown in FIG. 13 to FIG. 16, in the plate-shaped stone eve where the first surface and the other surfaces are continuous, the normal vector of the first surface and the normal vector of at least one surface constituting the other surface are anti-parallel or obtuse. And by providing a trench structure at the edge of the first surface, the recovery rate of plate-shaped silicon can be greatly improved. In addition, in the present invention, by providing a trench structure at the edge of the substrate, the plate-shaped silicon grown on the surface of the substrate can be easily separated into the plate-shaped silicon formed on the first surface and the edge by the groove structure. The plate-like silicon formed by the part; therefore, when manufacturing a solar cell, there is no need to provide a cutting process for cutting the edge portion that may cause an error in thickness, and it is directly used as a product. In addition, because the trench structure is used, the plate-shaped silicon formed on the first surface of the substrate can be easily separated by the edge portion, so that the stress and deformation caused by thermal shrinkage during cooling can be reduced. Next, as shown in FIG. 17 to FIG. 19, even if a shape having a groove structure and a protrusion structure on the substrate is adopted, the plate-shaped stone of the present invention can be manufactured. FIG. 17A is a schematic perspective view of a plate-shaped substrate C17 for manufacturing S17; FIG. 17B is a cross-sectional view of the plate-shaped silicon S17 formed by XVIIB-XVIIB of FIG. 17A; XVIIB is a cross-sectional view showing a state where a plate-like chip S 1 7 is produced on a substrate C17. In Fig. 17B, the oblate angle is formed between the normal vector VI 7 1A of the first surface 171A of the plate-shaped stone s 1 7 and the normal vector VI 72 Α of the second surface 172 Α. In Fig. 1A, the crystal growth surface of the substrate is oriented toward the direction of infiltration of the melt solution 87327.DOC • 21-1231261 (direction shown by P in the figure), and two parallel protrusions κΐ7 are formed on the substrate. Edge. The pair of protrusions K1 7 in FIG. 17C showing the cross section of the substrate. The second surface 176A of the substrate formed by the inside of the protrusion is at an acute angle with the first surface 175A of the substrate and is preferably formed at 30 to 60 degrees; the protrusion K17 The height HK17 is preferably set to 2 mm or more, and more preferably set to a range of 2 mm to 10 mm. When the silicon melt is solidified on the substrate C17 having the above-mentioned protrusion K17 to form a plate-like chip, the temperature of the silicon will decrease sharply from the melting point and cause thermal contraction; on the other hand, the substrate side will be generated by the heat of the silicon melt Thermal expansion. Here, if a structure in which the plate-shaped silicon and the substrate are completely in close contact is generated, a force acting in the opposite direction is generated between the two, and the plate-shaped silicon is difficult to peel off from the substrate, and the plate-shaped silicon is cracked or cracked. When using the substrate C17 in the shape shown in Figure 7A, even if the silicon shrinks and the substrate expands due to thermal effects, the opposite force will not be generated between the two, so that the plate-like silicon is easily deformed without deformation. The ground is peeled from the substrate. Since no stress is applied to the plate-shaped stone obtained as described above, high-quality plate-shaped silicon with small errors can be obtained. As a result, when a device such as a solar cell is manufactured from plate-shaped silicon, a high-performance and inexpensive solar cell can be obtained. By using the grooved bottle F17 on the substrate C17 having the above-mentioned shape, the plate-shaped first surface 171A of the product can be easily separated from the edge of the substrate. The groove width Wi7 and the groove depth D17 of the groove structure can be the same shape as described above. With the above-mentioned trench structure, the unstable quality of chips growing on the edge of the substrate will not be necessary as a product, and the thermal stress from the substrate and the silicon melt when the plate-shaped silicon is manufactured will be 87327.DOC -22 -^ 31261 becomes smaller, the first side of the plate-shaped silicon 丨 71 quality and instability will be reduced ... The above effect will be quite significant when the plate-shaped silicon is directly produced from the silicon melt. In addition, in the case shown in FIG. 17B, there are two second surfaces 172A having protrusions K17 formed on the plate-shaped broken first surface 17iA, but this is not a limitation. FIG. 18A is a schematic perspective view of the substrate C 18 for the production of the plate-shaped stone S18; FIG. 18B is a cross-sectional view of the plate-shaped stone 318 formed by the eighteenth ^ 1118- \ 1118 of FIG. 18; FIG. 18A is a cross-sectional view of a state where a plate-shaped silicon S 1 8 is manufactured on a substrate Ci8 along the line XVIIIB-XVIIIB. In FIG. 18A, two parallel pairs of protrusions Ki8a and protrusions K18b are formed on the edge portion of the substrate with respect to the immersion direction of the melt (the direction shown by P in the figure) on the crystal growth surface of the substrate. In FIG. 1 gc showing the cross section of the substrate, the protrusion K1 8 has a second surface 1 86A of the substrate formed by the inside of the protrusion at an acute angle with the first surface 185A of the substrate. When the substrate C18 shown in FIG. 18A is used, there are four second surfaces formed continuously with the first surface 181A of the plate-shaped silicon. In order to prevent the plate-shaped silicon S 1 8 from falling off from the substrate C18, it is preferable that the second surface is formed with a plurality of left and right sides. Similarly, when the above-mentioned substrate C18 is used, the stress of the plate-shaped silicon from the substrate will be reduced, so the plate-shaped silicon S18 can be easily peeled off by moving the plate-shaped silicon S18 in the direction of immersion. Here, the groove width F18 and groove depth D18 of the groove structure F1 8 can adopt the aforementioned shapes and sizes. FIG. 19A is a schematic perspective view of a substrate C19 for manufacturing the plate-shaped silicon 19. FIG. 19B is a cross-sectional view of the plate-shaped silicon S19 manufactured along the XIXB-XIXB on the substrate C19 of FIG. 19A, and FIG. 19C is a cross-section of the plate-shaped silicon manufactured along the XIXC-XIXC on the substrate C19 of FIG. 19A Figure, Figure 19D is a cross-sectional view of the base 87327.DOC -23-1231261 of Figure 19A along XIXC-XIXC. In FIG. 19A, a pair of parallel protrusions K19 are formed on the edge portion of the substrate with respect to the immersion direction of the melt (the direction shown by P in the figure) on the crystal growth surface of the substrate. In Fig. 19c showing the cross section of the substrate, the projection K19 has a second surface 196A of the substrate formed by the inner side of the projection at an acute angle to the first surface 195 of the substrate. Using the substrate C19 'as described above can further enhance the function of suppressing the drop. In the figure, the plate-shaped silicon formed at the center of the substrate immersion direction includes a first surface 191A, and has a four-sided structure; and the plate-shaped dream formed on the left and right of the substrate immersion direction includes the first surface 1 In the case of 91A, it has a two-sided structure. By making the obtained plate-shaped pieces have a multi-faceted structure as described above, the productivity can be further improved. In addition, as can be seen from the figure, a plate-shaped chip < first surface 191A is formed on the first surface i 95 A of the substrate. In addition, the groove width W19 and the groove depth D19 of the groove structure ρ 19 may adopt the aforementioned shapes and sizes. FIG. 20A is a schematic perspective view of a substrate C20 for manufacturing a plate-shaped silicon S20; FIG. 20b is a sectional view of the plate-shaped silicon S20 formed along the XXB-XXB on the substrate C20 of FIG. 20A; and FIG. 20C is a view of the substrate C20 of FIG. 20A Sectional view of plate-shaped silicon S20 formed along XXC-XXC. The shape of the substrate is a polyhedral shape in which only one of the four sides includes the second surface of the substrate. However, the shape of the substrate shown in FIG. 20A is a polyhedral structure in addition to the upper portion of the substrate. That is, in the case where the above-mentioned structure is adopted, the portion of the substrate that can be caught by the substrate is increased, so that the amount of silicon falling during growth is reduced. When the plate-shaped S 2 0 is peeled off from the substrate C20 having the above-mentioned shape, the plate-shaped silicon S20 and the substrate are on both sides, so in FIG. 20A, the plate-shaped S> Yu moved to the obliquely upward direction of the substrate, 87327.DOC -24-1231261, so that the plate-shaped stone was peeled off from the substrate C20. Here, in FIG. 20B and FIG. 20C, the widths L202A and L201C of the second surface forming the fitting portion with the first surface 201A of the plate-shaped silicon can be appropriately adjusted. The first surface 201A is formed on the surface of the first surface 205A of the substrate. Next, on the substrates shown in FIGS. 4A to 8A and FIGS. 10A to 20A, it is preferable to form fine unevenness on the portion where the first surface of the plate-shaped stone is grown, and the reason is: Regular irregularities are provided on the surface of the substrate in advance so that crystal nuclei of the 5th eve can easily be generated, which will help stabilize the shape of the obtained plate-shaped lithograph. The regular irregularities are preferably formed on the surface of the substrate ', and it is preferable to precisely control the distance between the convex portions. The nearest distance between the convex parts is preferably 0.5 mm or more and 2 mm or less. When the distance is less than 0.05 mm, the crystal grains of the plate-like silicon obtained will be too small to fully improve the characteristics of the solar cell. When it is larger than 2 mm, the surface unevenness of the obtained plate-shaped silicon becomes large, and it will be difficult to manufacture solar cells through a low-cost processing core. In addition, 'the difference in height of the unevenness is preferably 0.1 min or more and 1 mm or less'. The reason is that when the step difference is less than 0 · 1 mm, the tip angle of the protrusion becomes larger depending on the distance between the protrusions. As a result, the crystal nucleus will also be inappropriate at the edge of the convex portion. When the height difference is greater than 1 mm, the melt will also flow into the concave portion, causing the resulting plate-shaped stone to become uneven. As described above, by providing small convex portions, not only the obtained plate-like silicon shape is stabilized, but also contributes to the stabilization of quality very much; however, the obtained plate-like silicon surface sometimes includes small irregularities. That is, the rough plane mentioned in the present invention refers to a surface having a regular irregularity which is generated when a substrate having the fine irregularities described above is used. 87327.DOC -25-1231261 (manufacturing device for plate-shaped silicon) Next, the manufacturing device for plate-shaped silicon according to the present invention will be described with reference to FIG. 9 showing the outline of the device. The production of the plate-shaped pieces of the present invention is not limited to the device. In FIG. 9, the manufacturing apparatus of plate-shaped silicon includes a substrate C, a crucible steel 93, a silicon melt 94, a heating heater 95, a crucible table 96, a heat insulating material 97, a crucible lifting shaft 98, and a fixing device轴 99 on the substrate. Plate-shaped silicon S grows on the surface of substrate C. In this figure, the exterior of a manufacturing apparatus including a substrate c moving device, a crucible table 96 lifting device, a heating heater control device, a silicon additional input device, and a vacuum exhaust processing chamber is not shown. The device has a well-sealed processing chamber, and it is necessary to adopt a structure capable of replacing the gas with an inert gas or the like after the exhaust gas is discharged. At this time, although argon and helium can be used as the inert gas, based on cost considerations, it is better to use argon, and by constructing a circulating device, it will help to further reduce costs. In addition, if a gas containing an oxygen component is used, it is necessary to remove the oxygen component as much as possible because silicon oxide is generated and adheres to the substrate surface and the processing chamber wall. Furthermore, even when using a gas circulation type device, it is preferable to pass the circulating gas through a filter or the like to remove silicon oxide particles. As shown in FIG. 9, the substrate c having a temperature lower than the temperature of the silicon melt is a silicon melt 94 that enters the crucible 93 from the left side of the figure, and is immersed in the silicon melt. At this time, the silicon melt is held above the melting point by the heater 95 for heating. In order to obtain stable plate-shaped silicon, it is necessary to construct a device capable of tightly controlling the temperature of the melt, the ambient temperature in the processing chamber, and the temperature of the substrate C. By constructing the above device, plate-shaped silicon can be obtained with better reproducibility. 87327.DOC -26- 1231261 On the substrate, it is better to provide a structure that is easy to apply temperature control. Although the material of the substrate is not particularly limited, it is preferably a material having good thermal conductivity and a material having excellent heat resistance, and more preferably a graphite subjected to high-purity treatment or the like. For example, high-purity graphite, silicon carbide, quartz, boron nitride, alumina, zirconia, aluminum nitride, and metals can be used. The most suitable material can be selected according to the purpose. Thorium-purified graphite is relatively cheap and easy to process. , So it's more suitable. The material of the substrate can be appropriately selected according to various characteristics such as the degree of industrial low cost and the quality of the obtained plate-shaped silicon substrate. Furthermore, if a metal is used as the material of the substrate, as long as it is cooled frequently, the temperature of the substrate is kept below the melting point of the substrate, so as to avoid too much influence on the characteristics of the substrate, there is no problem in use. For easy temperature control, a copper-made fixed substrate is suitable. The fixed foot substrate refers to the portion where the shaft 99 is connected to the substrate C, and is not shown here. The cooling devices for the fixed substrate and the substrate c can be roughly divided into two types: direct cooling and indirect cooling. Direct cooling is a device that blows gas directly to the substrate to cool it; indirect cooling is indirectly cooled by gas or liquid. Device. Although the type of the cooling gas is not particularly limited, for the purpose of preventing oxidation of the plate-like silicon, inert gas such as nitrogen, argon, and helium is preferred. Especially when considering the cooling force, helium gas or a mixed gas of helium and nitrogen gas is preferred, but when cost is considered, nitrogen gas is preferred. As for the cooling gas, circulation by a heat exchanger or the like can further reduce the cost, and as a result, inexpensive plate-shaped silicon can be provided. Moreover, the substrate temperature is preferably adjusted by a cooling device and a heating device. For the substrate immersed in the melt solution, plate-like silicon 87327.DOC -27-1231261 grows on the surface of the substrate. Although the substrate is immersed in the melt solution to a certain depth, it is adjusted so that the entire substrate will not Immersion in silicon melt is more appropriate. Subsequently, although the substrate is taken out of the melt, the temperature of the substrate tends to rise because the substrate is heated by the silicon melt. However, if the substrate is to be immersed in a silicon melt at the same temperature, it is necessary to provide a cooling device capable of lowering the temperature of the substrate. However, regardless of whether direct cooling or indirect cooling is used, it is difficult to control the cooling rate (ie, substrate temperature) at any time, so it is better to install a heating device at the same time. That is, the substrate once taken out of the silicon melt is cooled by a cooling device, and then the substrate temperature is preferably controlled by a heating device before being immersed in the silicon melt. The heating device at this time may be a high-frequency induction heating method or a resistance heating method; however, conditions must be met so as not to affect the heating heater used to keep the silicon in a molten state. In this way, by using a cooling device and a heating device together, the stability of the plate-shaped silicon can be greatly improved. As important as substrate temperature control is the temperature management of the silicon melt. If the temperature of the melt is set near the melting point, the surface of the silicon melt may solidify because the substrate contacts the melt, so the temperature of the melt is preferably south of the melting point. That is, it is preferable that strict control is applied to a plurality of thermocouples or radiation thermometers. In order to strictly control the temperature of the melt, although it is better to immerse the thermocouple directly into the melt, the foreign matter in the protective tube from the thermocouple will mix into the melt, so it is not compatible with the control site Indirectly control the temperature by inserting a thermocouple into a crucible, etc., or control the silicon with a radiation thermometer

87327.DOC -28- 1231261 Structures such as melt temperature are preferred. The hanging pot 93 containing the melt is installed on the heat insulating material 97; the reason is to keep the melt temperature in a uniform state and to minimize the heat loss from the bottom of the crucible. The heat insulating material 97 is provided with a crucible table 96. A crucible lifting shaft 98 must be connected to the hanging pan platform 96, and a lifting device is provided. The reason is that in order to grow the plate shape on the substrate C, it is necessary to keep the substrate C moving up and down. To the same depth. In addition, in order to keep the position of the molten liquid level constant, that is, to supplement the silicon melt that is lost by taking out plate-like fragments and evaporation, polysilicon (block) added with silicon can be used to melt and adhere to it. There are no particular restrictions on the method of maintaining the liquid level by directly adding melt or powder in sequence; however, it is better to use a method that does not disturb the liquid level as much as possible, and the reason is that when melting When the liquid-liquid level is disturbed, the generated waveform will be reflected on the molten liquid side of the obtained plate-shaped silicon, which may impair the uniformity of the obtained plate. (Manufacturing method of plate-shaped silicon) Next, the manufacturing method of plate-shaped silicon of the present invention will be described using a plate-shaped silicon manufacturing apparatus shown in FIG. 9. First, a silicon block having a boron concentration adjusted so that the resistivity of the obtained plate-shaped silicon reaches a desired concentration is filled with a crucible 93 made of high-purity graphite. Next, a vacuum is applied to the processing chamber so that the processing chamber is decompressed to a specified pressure. Subsequently, argon (Ar) gas is introduced into the processing chamber, so that argon gas is often circulated in the upper part of the processing chamber at a flow rate of 10 liters / minute, and the reason is that by constantly circulating the gas, a clean silicon liquid level can be obtained .

87327.DOC • 29-1231261 Next, the temperature of the crushing and melting heater 95 is set to 150,000, so that the pieces in the Lin Gang 93 are completely melted. At this time, since the liquid level of the silicon raw material is lowered, additional silicon powder is added so that the liquid level of the silicon melt is located about 丨 cm from the upper end of the crucible. The silicon melting heater does not raise the temperature to 1500 C at one time, but heats it to about 1300 C 'at a temperature increase rate of ⑺ to ⑼ it / minute, and then raises the temperature to the specified temperature. The reason is that the temperature is increased sharply. When the thermal stress is concentrated in the corners of the crucible, the crucible is damaged. Subsequently, the temperature of the silicon melt was set at 1410t and maintained at that temperature for 30 minutes to stabilize the melt temperature, and then the crucible lifting shaft 98 was used to move the crucible 93 to the position of the fingertips; at this time The temperature of the silicon melt solution is preferably 14 ° C or higher and 1500 ° C or lower. Since the silicon melting point is around 141.0 °, if it is set to 14 °. (: In the following, 'Shi Xi will begin to solidify from the crucible wall, The final liquid level will gradually and gradually solidify. However, there is convection due to heat in Shixi melt, so when the production is not performed for a long time, the temperature can be set to 丨 400t. In addition, if set to 1500 At C or higher, the growth rate of the obtained plate-shaped silicon will be slower, resulting in deterioration of productivity, so it is not appropriate. Next, the plate-shaped silicon is grown. For example, the substrate shown in FIG. 4A to FIG. The direction of the arrow in 9 is moved from the left to the right. Here, when moving, 'the first surface (45A, 55A, 65A, 75A, 85A) of each substrate contacts the rare liquid. In this way, by using The surface of the substrate contacts the silicon melt, and the plate-shaped silicon grows on the surface of the substrate. As for the track of the plate-shaped silicon, it can be the track shown in Figure 9, or it can be a circular track or an ellipsoidal track; it is particularly preferable to have a structure that can realize any track. 87327.DOC -30-1231261 times The surface temperature of the substrate during the silicon melt is preferably 200 ° C or higher and n 00 ° c or lower because the substrate temperature is difficult to control stably when the substrate temperature is lower than 200t. That is, during continuous production, because of the processing chamber The substrate to be immersed will be subjected to the radiant heat of the silicon melt, and it is difficult to maintain it below 20 (rc, which will cause the quality of the obtained plate-shaped silicon to be unstable. In addition, when the substrate temperature is above iioo ° c, not only the plate-shaped silicon The growth rate of the substrate is slow, and there is a risk that the substrate is fixed to the silicon and the productivity may be deteriorated. In this way, due to the influence of the substrate temperature, the resulting plate-shaped silicon will easily be different, so a cooling device and The heating device is preferred. In the method for manufacturing plate-shaped silicon of the present invention, for example, the other surface that is continuous with the first surface of the plate-shaped silicon is formed by the front end of the substrate in the advancing direction of the substrate. Way to When the plate-shaped silicon is reached, the other side that is antiparallel to the first normal vector king or at an obtuse angle is on the side of the substrate in the direction of travel. Specifically, as shown in FIG. 4A, FIG. 5, FIG. 6, FIG. 7A, and FIG. 8A The upper part of the substrate is taken as the traveling direction (the traveling direction in the figure is indicated by p). As a result, silicon grows at the front end of the substrate, as shown in the plate-like shape shown in FIGS. 1 to 3 and 8A, and the stone is at the front end of the substrate. The part forms a fitting part, which is easy to resist the force of gravity. For this reason, “the plate-like pieces can be dropped from the substrate, and the plate-like pieces can be manufactured with higher productivity”, and the plate-like pieces can be easily carried out of the processing room. As mentioned above, in order to increase product capacity and further stabilize the quality, it is better to adopt a structure that can control the temperature as closely as possible. (First Example) (Production of plate-shaped silicon) The silicon material whose boron concentration is adjusted so that the resistivity becomes 5 Ω · is placed in 87327.DOC -31- 1231261 made of quartz protected by a high-purity graphite crucible After the inside of the crucible, it is placed in a processing chamber as shown in FIG. 9. First, vacuum processing the processing chamber, decompress the inside of the processing chamber to .33 X 1 (r3Pa), and then replace it with Asahi gas at normal pressure, and then introduce Ar gas into the processing chamber to return the processing chamber to normal pressure. Asahi gas was constantly introduced from the upper part of the processing chamber at a flow rate of 2 liters / minute. Next, the silicon raw material was melted by the heater, but the temperature of the silicon melting heater was raised to 150 ° C. at a temperature rise rate of 1 (rc / min., Once it was confirmed that the silicon raw material was completely melted, the temperature of the crucible was immediately followed. The temperature was kept at 1425 ° F to stabilize the temperature. Next, 100 pieces of plate-like silicon were grown by immersing in a melt of 10 mm in a growth substrate having a shape shown in FIG. 4A. When the substrate was immersed in the silicon melt The temperature is 600 C. In addition, the angle γ4 of the first surface 45 A of the substrate and the second surface 46 of the substrate is 50 degrees, and the width of the second surface of the substrate is £ 46, which is 010 ^ 1 ^. Plate-shaped silicon has the shape shown in Figure 丨: the size of the first side is 75 mm diagonally, and the second side is 10 mm; in addition, the average thickness of the first side is about 35 mm. This is the use of laser cutting to separate the plate-shaped silicon from the substrate. Using the upper substrate, the drop rate of the plate-shaped silicon is 5%. The so-called drop rate refers to the number of substrate immersion, The ratio of the number of plate-shaped silicon in the processing chamber cannot be taken out. (Production of solar cells) Next, the obtained plate-shaped silicon is used to manufacture the sun. Batteries. The obtained plate-shaped silicon was cut with a laser, and a plate-like plate of 70 mm × 70 mm was cut from the first surface. ≫ Next, a mixed solution of nitric acid and fluoric acid was etched.

S7327.DOC -32-1231261 and after washing, perform alkaline etching with sodium hydroxide. Next, a p-type substrate n + layer is formed by pOch diffusion. After removing the PSG film formed on the surface of the plate-shaped silicon with fluoric acid, a silicon nitride film was formed on the η layer serving as the light-emitting surface of the solar cell by using a plasma (: ¥] [) device. Next, the η + layer, which is also formed on the back side of the solar cell, is removed by etching using a mixed solution of nitric acid and fluoric acid to expose the p substrate, and simultaneously form a back electrode and a? + Layer. Next, the electrodes on the front side are formed by screen printing. Next, a part of the silver electrode was subjected to a dip soldering process to prepare a solar cell. The obtained solar cells were evaluated for cell characteristics using the "crystalline solar cell output measurement method (JIS c 8913 (1988") "under irradiation of am1.5, 100 mw / cm2. The results of the foot measurement were completed by Looking at the average value of the battery cells, the short-circuit current is 30.33 (mA / cm2), the open-circuit voltage is 574 (πιν), the fill factor is 0.741, and the efficiency is 12.9 (%). (Second embodiment) In addition to using The surface temperature of the growth substrate and the substrate when immersed in the melt shown in FIG. 5 is 300. (Except for the other, the plate-shaped silicon is completely manufactured according to the method of the first embodiment. In addition, the width L56B of the second surface 56B of the substrate is 4 mm, height H56B is 5 mm 〇 The obtained plate-like silicon has the shape shown in FIG. 2: the size of the first surface 2 i a is 75 mm diagonally, and the length of the second surface L22B is 4 mm; The average value of the thickness of the first surface 21A is about 041 mm. Using the above substrate, the drop rate of the plate-shaped silicon is 4%.

87327.DOC -33-1231261 was used to manufacture solar cells using the plate-shaped silicon obtained, and the same evaluation of the characteristics of the battery cells as in the first embodiment was performed. As a result of measuring the manufactured solar cell, the short-circuit current was 29.68 (mA / cm2), the open-circuit voltage was 57 1 (mV), the curve coefficient was 0.730, and the efficiency was 12.39 (%). (Third embodiment) Except that the growth substrate shown in FIG. 6 and the surface temperature of the substrate when immersed in the melt are 450 ° C, the plate-shaped tap is manufactured entirely according to the method of the first embodiment. The width L66A of the second surface 66 A of the substrate is 5 mm, and the height H68 A of the third surface 68 A of the substrate is 3 mm. The obtained plate-shaped silicon has a shape as shown in FIG. 3: the size of the first surface 31A is 75 mm diagonally, the width of the second surface L3 2 A is 5 mm, and the width of the third surface L34 A is 3 In addition, the average value of the thickness of the first surface 31A is about 0.38 mm. Using the above substrate, the drop rate of the plate-shaped silicon is 4%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured results of the manufactured solar cells were averaged. The short-circuit current was 29.32 (mA / cm2), the open-circuit voltage was 562 (mV), the curve coefficient was 0.750, and the efficiency was 12.37 (%). (Fourth embodiment) Except for using the growth substrate shown in Fig. 7A, plate-like silicon was manufactured entirely in accordance with the method of the first embodiment. For the substrate used, the size of the first surface 75 A of the substrate is 75 mm diagonal, the width L76A of the second surface 76 A of the substrate is 2 mm, and the width L78A of the third surface 78 A of the substrate is 3 mm; in addition, the substrate The angle γ7 A between the first surface 75 A and the second surface 76 A of the substrate is 150 degrees, and the angle γ7B between the second surface 76A of the plate 76A and the third surface 78A of the substrate is 80 degrees. The size of the obtained first surface of the plate-shaped chip was a diagonal length of 75 mm, the width of the second surface was 2 mm, and the length of the third surface was 3 mm; in addition, the average thickness of the first surface was approximately 〇 3 3 mm. With the above substrate, the drop rate of the plate-shaped silicon is 4%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured results of the manufactured solar cells were averaged. The short-circuit current was 28.83 (mA / cm2), the open-circuit voltage was 5 60 (mV), the curve coefficient was 0.747, and the efficiency was 12.05 (%). (Fifth Embodiment) Except for using the growth substrate shown in Figs. 8A and 8D and setting the crucible temperature to 1415 ° C, the method of the first embodiment was used to produce plate-shaped silicon. For the substrate used, the size of the first side 8 A is 75 mm diagonal, the width L86A of the second side 86A of the substrate is 2 mm, and the width L88A of the third side 88A of the substrate is 8 mm. The angle γ8A between the second substrate surface 86A and the third substrate 88A is 120 degrees, and the angle γ8B between the substrate third surface 88A and the fourth substrate S9A is 120 degrees. Furthermore, in FIG. 8A, the length L88A of the third surface of the substrate is 25 mm, and the length L86A of the second surface of the substrate is 25 mm. The width L82A of the second surface 82A of the obtained plate-shaped silicon was 2 mm, and the width L83A of the third surface 83A was 3 mm. In addition, the average thickness of the first surface 81A of the plate-shaped silicon was approximately 0.4 mm. The substrate, the drop rate of plate-shaped silicon is 3%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the evaluation of the characteristics of the battery cells was performed in the same manner as in the first embodiment 87327.DOC -35-1231261. The measured results of the manufactured solar cells were averaged. The short-circuit current was 29.43 (mA / cm2), the open-circuit voltage was 57 ° (mV), the curve coefficient was 0.760, and the efficiency was 12.75 (%). (Sixth embodiment ) Except for using the growth substrate shown in FIG. 10A and FIG. 10D and setting the crucible temperature to 1410 ° C., the method of the first embodiment is used to manufacture plate-shaped silicon. For the substrate used, the size of the first side 105A is 75 mm diagonal. The width L106A of the second side of the substrate 106A is 2 mm, the length of the second side of the substrate B 106 is 25 111111, and the length of the third side of the substrate 1 ^ 108 is 25111111. In addition, the angle 71 ° between the first surface of the substrate 105A and the third surface of the substrate is 50 °. The width w 102A of the second surface 102A of the obtained plate-shaped silicon was 2 mm, and the width W103A of the second surface 103A was 1 mm. In addition, the average thickness of the first surface of the plate-shaped silicon wafer was about 0.43 mm. With the above substrate, the drop rate of the plate-shaped silicon is 3%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured results of the manufactured solar cells were averaged. The short-circuit current was 30.02 (mA / cm2), the open-circuit voltage was 569 (mV), the curve coefficient was 0.750, and the efficiency was 12.81 (%). (Seventh embodiment) Except that the growth substrate shown in FIG. 11A and FIG. 11D is used and the immersion depth is set to 8 mm, the plate shape is manufactured according to the method of the first embodiment. 87327.DOC -36-1231261 Shi Xi . The width of the second surface of the substrate W1 6A is 1 mm, the length of the second surface of the substrate L116 is 25 mm, the width of the third surface of the substrate wi 18 A is 2 mm, and the length of the third surface 118 of the substrate 1118 is 25 111111. In addition, the angle between the first surface 115 of the substrate and the second surface of the substrate is 150 degrees, and the angle between the second surface of the substrate and the third surface of the substrate is 80 degrees. In terms of the growth substrate used, the size of the first side 11 A is 75 mm diagonal. The width LU2A of the second surface 112A of the obtained plate-shaped silicon is 1 mm, and the width B of the second surface 113A is 113 mm, and the average thickness of the plate-shaped first surface 111A is approximately 0.33. mm, so that it can be easily peeled from the substrate. With the above substrate, the drop rate of the plate-shaped silicon is 3%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured results of the manufactured solar cells were averaged. The short-circuit current was 28.60 (mA / cm2), the open-circuit voltage was 560 (mV), the curve coefficient was 0.743, and the efficiency was 11.91 (%). (Eighth embodiment) Except that the growth substrate shown in Figs. 12A and 12D is used and the immersion depth is set to 5 mm, the plate-shaped silicon is manufactured entirely according to the method of the first embodiment. The width W126 A of the second surface of the substrate is 1 mm, the length L126 of the second surface of the substrate is 28 mm, the height of the third surface of the substrate H128A is 2 mm, and the length of the third surface of the substrate L128 is 19 mm. For the growth substrate used, the size of the first side 125 A is diagonally 87327.DOC • 37-1231261 75 mm. The width U23A of the third surface 123A of the obtained plate-shaped silicon is 1 mm; in addition, the average value of the thickness of the first surface 121 a of the plate-shaped silicon is approximately mm mm ° Using the above substrate, the drop rate of the plate-shaped silicon Is 3. / 〇. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same cell characteristics evaluation as in the first embodiment was performed. The measured results of the manufactured solar cells were averaged. The short-circuit current was 29.48 (mA / cm2), the open-circuit voltage was 556 (mV), the curve coefficient was 0.742, and the efficiency was 12.16 (%). (Ninth embodiment) (Production of plate-shaped shreds) After adjusting the boron concentration so that the resistivity of 2 · 0 Ω · cm, the shredded raw material is placed in a pile pin made of graphite of South purity, and then fixed to the pin as shown in FIG. 9 Processing room. First, vacuum processing the processing chamber to reduce the inside of the processing chamber to 10 · 5 Ton :, then replace it with Ar gas at normal pressure, introduce Ar gas into the processing chamber, return the processing chamber to normal pressure, and then make Ar The gas is often infiltrated from the upper part of the processing chamber at a flow rate of 5 liters / minute. Next, the heater is used to melt the hard material. However, the temperature of the silicon melting heater is raised to 1500 ° C at a temperature increase rate of 20 ° C / minute. Once it is confirmed that the silicon material is completely melted, the temperature is maintained at three. hour. Subsequently, the temperature of the pan was kept at 141 5 ° C to stabilize the temperature. Next, a growth substrate having a shape shown in FIG. 13A was immersed in a solution of 9 mm to grow 1,000 pieces of plate-shaped stone. The length L136 of the second surface of the substrate is 35 mm, and the length L138 of the third surface of the substrate is 45 mm. In addition, the groove width W13 of the groove is set to 5 mm, and the groove depth 87327.DOC • 38-1231261 D 13 is 8 mm. With the trench structure of the substrate, the plate-shaped silicon can be easily separated from the edge portion. The temperature of the substrate when immersed in the silicon melt is set to 450 ° C. With respect to the obtained plate-like shape, the size of the first surface 135A was 115 mm diagonally; in addition, the average value of the thickness of the first face 135A was approximately ο · ”mm. Using the above-mentioned substrate, the plate-like silicon was dropped. The rate is 20.0 / 0. (Manufacture of solar cells) Next, the obtained plate-shaped silicon is used to manufacture a solar cell. The obtained plate-shaped silicon is cut with a laser, and 100 mm × 100 is cut from the first side. Plate-shaped pieces of mm. Next, an experimental description was performed with sodium hydroxide. Next, PSG (phosphosilicate glass) was applied by a self-propelled coating method and then dried to form P by thermal diffusion. Next, the PSG film formed on the surface of the slab-shaped stone was removed by hydrofluoric acid, and then a nitride film was formed on the n + layer using a Denso VD device. On the surface, sintered paste is printed to form the back surface at the same time; + and P layers. Next, the sintered silver paste is printed to form the thunder on the front side. ㈣4 ° Then 'apply to the part of the silver electrode The dip-soldering process was used to make a solar cell. The characteristics of the female π-cell unit were evaluated as in the first embodiment. Aberdeen embodiment the solar cell electrical measurement results of 'the average value of the cell is completed view of the open circuit voltage short circuit capacity 5δ4 (... efficiency of 13.7 (%). (Tenth Embodiment)

87327.DOC -39- 1231261 Except that the growth substrate shown in Figs. 14A and 14C and the temperature of the substrate at the time of immersion are set at 300 ° C, the plate-shaped silicon was manufactured entirely according to the method of the ninth embodiment. For the growth substrate used, the size of the first surface 145A of the substrate is a diagonal length Π5 mm, the length of the second surface of the substrate L146 is 40 mm, and the length of the third surface of the substrate L148 is 3S mm. In addition, the groove width WM of the trench structure is 3 mm, and the width L142A of the second surface 142A of the plate-shaped silicon obtained by the trench depth D14 is 2 mm; The average value of the thickness is about 0.4 mm, so that it can be easily peeled from the substrate. With the above substrate, the drop rate of the plate-shaped silicon is 2%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured results of the manufactured solar cells were calculated as an average value. The short-circuit current was 31.05 (mA / cm2), the open-circuit voltage was 592 (mV), the curve coefficient was 0.747, and the efficiency was 13.7 (%). (Eleventh embodiment) Except that the growth substrate shown in Figs. 15A and 15C and the temperature of the substrate at the time of immersion are set to 200 ° C, the plate-shaped silicon is manufactured entirely according to the method of the ninth embodiment. For the growth substrate used, the size of the first side of the substrate 155 A is 115 mm diagonal. ° The width of the second side of the substrate 156A is 2 mm, and the length of the second side of the substrate L156 is 40 mm. The width of the third side of the substrate is 3 mm. The length of the third side of the substrate 1 丨 58 is 35 mm. In addition, the angle between the first surface of the substrate and the second surface of the substrate is bo degrees 87327.DOC -40. 1231261, and the angle between the second surface of the substrate and the third surface of the substrate is 80 degrees. The groove width W15 of the groove structure is 2 mm, and the groove depth D15 is 1 mm. The width L152A of the second surface 152A of the obtained plate-shaped silicon was 2 mm; in addition, the average value of the thickness of the first surface 15 1A of the plate-shaped chip was about 0.43 mm, so that it could be easily peeled from the substrate. With the above substrate, the drop rate of the plate-shaped silicon is 2%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. As a result of measuring the manufactured solar cell, the average value was calculated as a short circuit current of 31.77 (mA / cm2), an open circuit voltage of 595 (mV), a curve coefficient of 0.749, and an efficiency of 14.2 (%). (Twelfth embodiment) Except that the growth substrate shown in Figs. 16A and 16C and the temperature of the crucible were set to 1410 ° C, the plate-shaped silicon was completely manufactured according to the method of the ninth embodiment. For the growth substrate used, the first side of the substrate is 165 A in size with a diagonal length of 115 mm. The width of the second surface of the substrate is 3 mm, the length of the second surface of the substrate L166 is 45 mm, and the height of the third surface of the substrate is 4 mm, and the length of the third surface of the substrate L168 is 25 mm. In addition, the trench structure has a trench width wi 6 of 3 mm and a trench depth D16 of 2 mm. The width L162B of the second surface 162B of the obtained plate-shaped silicon was 3 mm; in addition, the average value of the thickness of the first surface 161A of the plate-shaped silicon was about 0.37 mm, thereby being easily peeled from the substrate. Using the above-mentioned substrate, the drop rate of the plate-shaped silicon was 1/0. In addition, the solar cells were manufactured using the plate-shaped silicon obtained from 87327.DOC -41-1231261, and the same cell characteristics evaluation as in the first embodiment was performed. The measured results of the manufactured solar cells were calculated as an average value, the short-circuit current was 32 03 (inA / cni2), the open-circuit voltage was 5 86 (mV), the curve coefficient was 0.748, and the efficiency was 14.0 (%). (Thirteenth embodiment) Except for using the growth substrate shown in Figs. 17A and 17C, plate-like silicon was manufactured entirely in accordance with the method of the ninth embodiment. The length of the protrusion K17 LK17 is 85 mm, the length from the edge of the substrate to the protrusion lki 7a is 15 mm, the surface visibility of the protrusion K17 is 3 mm, and the height of the protrusion HK17 is 4 mm. In addition, the first surface of the substrate is uneven: the interval between the convex portions is 1 mm, and the depth of the concave portions is 1 mm. The first surface of the substrate 175A is 115 mm diagonal. The trench structure has a trench width W17 of 2.5 mm and a trench depth D17 of 2.5 mm. The width L172A of the second surface 172A of the obtained plate-shaped silicon was 3 mm; in addition, the average value of the thickness of the first surface 171A of the plate-shaped silicon was about 0.32 mm, thereby being easily peeled from the substrate. With the above-mentioned substrate, the drop rate of the plate-shaped substrate was 7%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured results of the manufactured solar cells were averaged. The short-circuit current was 309 (mA / cm2), the open-circuit voltage was 582 (mV), the curve coefficient was 0.038, and the efficiency was 13.3 (%). (Fourteenth embodiment) Except for using the growth substrate shown in Figs. 18A and 18C, the method of the ninth embodiment is used to produce plate-shaped silicon. The length LK18 of the protrusion K1 8a and the protrusion K1 8b is 15 mm, and the length from the edge of the substrate to the protrusion LK18a is 15 87327.DOC -42-1231261 mm, the distance between the protrusions in the immersion direction is 55 mm, and the surface width of the protrusion K1 8 is 3 mm, the height of the protrusion ΗΚ18 is 4 mm. In addition, the first surface of the substrate is uneven. The interval between the convex portions is 1.5 mm, and the depth of the concave portions is 0.5 mm. The first surface of the substrate is 1 8 5 A with a diagonal length of 11 5 mm. Groove structure groove The groove width W18 is 2.5 mm, the groove depth D18 is 2.5 mm, and the width of the edge portion is 3 mm. The width L182A of the second surface 182A of the obtained plate-shaped silicon was 3 mm; in addition, the average value of the thickness of the first surface 181A of the plate-shaped silicon was about 0.38 mm, thereby being easily peeled from the substrate. With the above substrate, the drop rate of the plate-shaped silicon is 8%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured results of the manufactured solar cells were calculated as an average value, the short-circuit current was 31.5 (mA / cm2), the open-circuit voltage was 584 (mV), the curve coefficient was 0.741, and the efficiency was 13.6 (%). (Fifteenth Embodiment) Except for using the growth substrate shown in Figs. 19A and 19D, plate-like silicon was manufactured entirely in accordance with the method of the ninth embodiment. The width W196 of the second substrate surface 196A is 1 mm, and the angle between the first substrate substrate 195A and the second substrate substrate is 150 degrees, and the angle between the second substrate substrate and the third substrate substrate is 80 degrees. The length of the protrusion K19 is LK19 is 15 mm, the shorter length from the edge of the substrate to the protrusion is 15mm, the width of the surface of the protrusion K19 is 3mm, and the height of the protrusion is HK19 * 4mm. In addition, the first surface of the substrate is uneven: the interval between the convex portions is 0.5, and the depth of the concave portion is 0.3 mm. The first side of the substrate has a length of 195 cm and a diagonal length of 87327.DOC • 43-1231261 115 mm. The trench width wi9 of the trench structure is 25 mm, and the trench depth D19 is 2.5 mm. The width L192A of the second surface 192A of the plate-shaped silicon obtained is 3 mm; The average thickness is about 032 mm, which makes it easy to peel from the substrate. With the above substrate, the drop rate of the plate-shaped silicon was 1%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. As a result of measuring the manufactured solar cell, the short-circuit current was 30.1 (mA / cm2), the open-circuit voltage was 577 (mV), the curve coefficient was 0.748, and the efficiency was 13.0 (%). (Sixteenth embodiment) Except for using the growth substrate shown in FIG. 20A, the method of the ninth embodiment is used to manufacture plate-shaped silicon. The angle between the first surface of the substrate 205A and the second surface of the substrate is 90 degrees, and the angle between the second surface of the substrate and the third surface of the substrate is 130 degrees. The width of the second side of the substrate and the third side of the substrate are both 3 mm. In addition, the surface of the first surface 205A of the substrate is uneven: the interval between the convex portions is 2.0 mm, and the depth of the concave portions is 0.1 mm. The first surface 205A of the substrate has a diagonal length of 115 mm. The width L202A of the second side 202 A of the obtained plate-shaped silicon was 3 mm: In addition, the average value of the thickness of the first side 201A of the plate-shaped stone was approximately 0.32 mm, thereby being able to be easily peeled from the substrate. . With the above substrate, the drop rate of the plate-shaped silicon is 1 ° /. . In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment was performed. The measured result of the manufactured solar cell is calculated as an average value, the short-circuit current is 30.5 (mA / cm2), the open-circuit voltage is 87327.DOC -44 * · 1231261 5 74 (mV), the curve coefficient is 0 738, and the efficiency is 12.9 (%). (First Comparative Example) Except for using the growth substrate shown in Fig. 21A and Fig. 21C, a plate-shaped stone was manufactured by the method of the ninth embodiment. As for the growth substrate used, the size of the first surface of the substrate 2 1 5 A is 115 mm diagonal; the width of the second surface of the substrate and the third surface of the substrate are 5 mm. In addition, the groove width W21 of the groove structure is 2 mm, and the groove depth D21 is 2 mm. The length of the first side length L211A of the obtained plate-shaped silicon is a diagonal length

115 mm, the width L212A of the second surface 212A is 5 mm, and the width L213A of the third surface 213A is 2 mm; In addition, the average thickness of the first surface 211A of the plate-shaped silicon is about 0.36 mm, so that it can be easily changed from The substrate is peeled. With the above substrate, the drop rate of the plate-shaped silicon is 90%, which is because there is no normal vector that can form an anti-parallel or pure angle with the normal vector on the first surface of the plate-shaped plate. (Second Comparative Example) Except for using the growth substrate shown in Fig. 22, plate-like silicon was produced entirely by the method of the ninth embodiment. The first surface of the substrate of the growth substrate is the same as that of the tenth hole embodiment, and is provided with a concave-convex process, the interval between the convex portions is 2.0 mm, the depth of the concave portion is 0.1 mm, and the surface size is 115 mm in diagonal. The width of the second surface of the obtained plate-shaped silicon was 3 mm; the average value of the thickness of the first surface of the plate-shaped silicon was about 0.3 5 mm. Using the above substrate, the drop rate of the plate-shaped silicon was 47%. In addition, the rate of cracking or cracking during cooling was 32%. In addition, a solar cell was manufactured using the obtained plate-shaped silicon, and the same evaluation of the battery cell characteristics as in the first embodiment of 87327.DOC -45-1231261 was performed. The measured results of the manufactured solar cells are averaged. The short-circuit current is 25.9 (mA / Cm2), the open-circuit voltage is 552 (mv), and the curve coefficient is ο.] The efficiency is considered to be low for the solar cell. The reason may be the residual stress in the plate-shaped silicon. In addition, the embodiments and examples disclosed at the first time are for illustrative purposes only, and are not limited thereto. The scope of the present invention is not defined by the above description, but is shown in the scope of the patent, and includes all changes equivalent to or within the scope of the patent application. As described above, the use of the substrate of the present invention to manufacture plate-shaped silicon that fits the substrate can avoid the problem of falling of the plate-shaped silicon, and can stably and lowly supply plate-shaped silicon locally. In addition, by adopting the groove structure of the above substrate, the plate-shaped stone can be easily peeled off from the substrate, thereby reducing deformation. In addition, since this plate-shaped silicon is used in the manufacture of solar cells, it can supply low-cost, high-quality solar cells. [Brief description of the drawings] FIG. 1 is a schematic perspective view of the plate-shaped silicon of the present invention. FIG. 2 is a schematic perspective view of a plate-shaped silicon according to the present invention. FIG. 3 is a schematic perspective view of a plate-shaped silicon according to the present invention. 4A is a schematic perspective view of a substrate for manufacturing a plate-shaped silicon according to the present invention; and FIG. 4B is a schematic perspective view of the substrate viewed from another direction. Fig. 5 is a schematic perspective view of a plate-like substrate for manufacturing according to the present invention. FIG. 6 is a schematic perspective view of a substrate for manufacturing a plate-shaped silicon according to the present invention.

A 7 A is a schematic perspective view of a substrate for manufacturing a plate-shaped stone eve of the present invention; FIG. 7B

87327.DOC -46-1231261 is an enlarged view of this part. 8A is a schematic perspective view of a substrate for manufacturing a plate-shaped silicon according to the present invention; FIG. 8B is a cross-sectional view of the plate-shaped silicon grown along VIIIB-VIIIB in FIG. 8A; FIG. 8C is a plate grown along VIIIC-VIIIC in FIG. 8A 8D is a cross-sectional view of the substrate along VIIIB-VIIIB in FIG. 8A; FIG. 8E is an enlarged view of the part. FIG. 9 is a schematic perspective view of a device for manufacturing a silicon plate according to the present invention. FIG. 10A is a schematic perspective view of a substrate for manufacturing plate-shaped silicon according to the present invention; FIG. 10B is a cross-sectional view of plate-shaped silicon grown along XB-XB in FIG. 10A; FIG. 10C is a plate grown along XC-XC in FIG. 10A 10D is a cross-sectional view of the substrate along XB-XB in FIG. 10A. FIG. 11A is a schematic perspective view of a plate-shaped silicon manufacturing substrate of the present invention; FIG. 11B is a cross-sectional view of the plate-shaped silicon grown along XIB-XIB in FIG. 11A; FIG. 11C is a plate grown along XIC-XIC in FIG. 11A FIG. 11D is a cross-sectional view of the substrate along XIB-XIB in FIG. 11A. FIG. 12A is a schematic perspective view of a plate-shaped silicon manufacturing substrate of the present invention; FIG. 12B is a cross-sectional view of the plate-shaped silicon grown along XIIB-XIIB in FIG. 12A; FIG. 12C is a plate grown along XIIC-XIIC in FIG. 12A 12D is a cross-sectional view of the substrate along XIIB-XIIB in FIG. 12A. FIG. 13A is a schematic perspective view of a plate-shaped silicon manufacturing substrate according to the present invention; FIG. 13B is a cross-sectional view of the plate-shaped silicon grown along XIIIB-XIIIB in FIG. 13A; FIG. 13C is a plate grown along XIIIC-XIIIC in FIG. 13A Sectional view of the shape of silicon. FIG. 14A is a schematic perspective view of a substrate for manufacturing plate-shaped silicon according to the present invention; FIG. 14B is a cross-sectional view of plate-shaped silicon grown along XIVB-XIVB in FIG. 14A; FIG. 87327.DOC -47-1231261 14C is a view along the middle of FIG. 14A A cross-sectional view of the XIVC-XIVC substrate. FIG. 15A is a schematic perspective view of a substrate for manufacturing plate-shaped silicon according to the present invention; FIG. 15B is a sectional view of the plate-shaped silicon grown along XVB-XVB in FIG. 15A; FIG. 15C is a view of the substrate along XVC-XVC in FIG. 15A Sectional view. FIG. 16A is a schematic perspective view of a substrate for manufacturing plate-shaped silicon according to the present invention; FIG. 16B is a sectional view of the plate-shaped silicon grown along XVIB-XVI3B in FIG. 16A; FIG. 16C is a view of the substrate along XVIC-XVIC in FIG. Sectional view. FIG. 17A is a schematic perspective view of a substrate for manufacturing a plate-shaped silicon according to the present invention; FIG. 17B is a cross-sectional view of the plate-shaped silicon grown along XVIIB-XVIIB in FIG. 17A; FIG. 17C is a view showing the substrate along XVIIB-XVIIB in FIG. 17A A cross-sectional view of the growth state of plate-like silicon. FIG. 18A is a schematic perspective view of a plate-shaped silicon manufacturing substrate of the present invention; FIG. 18B is a cross-sectional view of the plate-shaped silicon grown along XVIIIB-XVIIIB in FIG. 18A: FIG. 18C is a view showing the substrate along XVIIIB-XVIIIB in FIG. 18A A cross-sectional view of the growth state of plate-like silicon. 19A is a schematic perspective view of a substrate for manufacturing a plate-shaped silicon according to the present invention; FIG. 19B is a cross-sectional view of the plate-shaped silicon grown along XIXB-XIXB in FIG. 19A; FIG. 19C is a plate grown along XIXC-XIXC in FIG. 19A 19D is a cross-sectional view of the substrate along XIXC-XIXC in FIG. 19A. 20A is a schematic perspective view of a substrate for manufacturing a plate-shaped silicon according to the present invention; FIG. 20B is a cross-sectional view of the plate-shaped silicon grown along XXB-XXB in FIG. 20A; FIG. 20C is a plate grown along XXC-XXC in FIG. 20A Sectional view of the shape of silicon. Figure 21A is a schematic perspective view of a comparative example substrate for manufacturing plate-shaped silicon; Figure 218 is a cross-sectional view of plate-shaped silicon grown along the \ 18- \ ratio in Figure 21; Figure 87327.DOC -48-1231261 21 (: Is a cross-sectional view of the substrate along Y1 ::-\\ 10: in FIG. 20A. FIG. 22A is a schematic perspective view of a comparative example substrate for the production of plate-shaped silicon; FIG. 22B is along XXIIB in FIG. 22A -XXIIB Sectional view of plate-shaped silicon grown. [Illustration of Symbols of the Drawings] 11A First surface V11A normal vector 12A Second surface V12A normal vector 13A Boundary line 21A First surface V21A normal vector 22B Second surface L22B Length V22B normal vector 23A boundary line 31A first surface V31A normal vector 32A second surface L32A length V32A normal vector 33A boundary line 34A third plane L34A length V34A normal vector 87327.DOC -49-1231261 45A substrate first surface 46A substrate second surface L46A width 47A boundary line C4 substrate 55A substrate first surface 56B substrate second surface H56B locality L56B width C5 substrate 65A substrate first surface 66A substrate second surface L66A width 68A substrate third surface H68A height C6 substrate 75A substrate first surface V75 normal vector 76A second surface of substrate V76 normal vector L76A width 78A third surface of substrate V78A normal vector L78A width 27.DOC -50- 1231261 C7 substrate 81 A first surface 82A second surface 82C second surface L82A width L82C width 83A Third side L83A width S8 plate-shaped silicon 85A substrate first side 86A substrate second side L86A, L88A length W86A, W88A width 88A substrate third side C8 substrate 93 crucible 94 silicon melt 95 heating heater 96 crucible table 97 Insulation material 98 Crucible lifting shaft 99 Shaft fixed on the substrate 101 A First surface 102A Second surface 87327.DOC -51-1231261 102C Second surface L102A Width L102C Width 103A Third surface L103A Width S10 Plate silicon 105A substrate first surface L106A, L108A length W106A width CIO substrate 111A first surface 112A second surface L112A length 113A third surface 113C third surface L113A width L113C width 114A fourth surface Sll plate-shaped silicon 115A substrate first surface L116A, L118A length W116A, W118A width Cll substrate 121A first surface -52-

87327.DOC 1231261 L121 A length 122B second surface 123A third surface L123A, L123C width S12 plate-shaped silicon 125A substrate first surface L126A, L128A length W126A width H128A height C12 substrate 13 ΙΑ first surface S13 plate silicon 135A substrate first One side 135a edge portion 136A substrate second side 136a edge portion L136A > L138A length W126A width H128A height C13 substrate F13 groove structure 141A first surface 142A second surface L142A length 87327.DOC -53- 1231261 143A third Surface S14 Plate silicon 145A Substrate first surface 146A Substrate second surface L146A, L148A Length € 14 Substrate 151A First surface 152A Second surface L152A Length 153A Third surface 154A Fourth surface S15 Plate silicon 155A Substrate First surface L156A > L158A length C15 substrate F15 groove structure 161A first surface 162B second surface L162B width 163A third surface S16 plate silicon 165A substrate first surface L166A, L168A length C16 substrate -54-

87327.DOC 1231261 F16 groove structure 171 A first surface V171 A normal vector 172A second surface V172 normal vector L172A length 175A substrate first surface 176A substrate second surface C17 substrate F17 groove structure 181A first surface L182A length 185A substrate First surface C18 substrate S18 plate-shaped silicon F18 trench structure 191A first surface 195A substrate first surface C19 substrate S19 plate-shaped silicon F19 trench structure 201A first surface L201C, L202A length 205A substrate first surface -55-

87327.DOC 1231261 C20 substrate S20 plate silicon 211A first surface L212A, L213A length 215A substrate first surface C substrate F21 trench structure 221A first surface 222A second surface 225A substrate first surface C22 substrate 87327.DOC -56-

Claims (1)

1231261 Patent application and patent application: L — plate-shaped silicon 'is characterized in that a substrate is immersed in a silicon melt to form on the surface of the substrate, and the plate-shaped silicon has The other surface formed continuously by the first surface; the other surface includes at least one surface whose normal vector forms an anti-parallel or obtuse angle with the normal vector of the first surface, and the first surface and other surfaces form a joint with the substrate. unit. 2. The plate-like silicon as described in the first item of the patent application, wherein the above-mentioned first surface is formed on a substantially flat surface. 3. The platy silicon as described in the first item of the patent application, in which the other surfaces that are continuous with the first surface are formed in a rough plane. 4. · A method for manufacturing plate-shaped silicon, which is characterized in that the surface of the substrate is immersed in the silicon melt, and then the substrate is pulled away from the silicon melt to grow plate-shaped silicon on the surface of the substrate. The method for manufacturing plate-shaped silicon, and the substrate has: a first surface of the substrate, which forms the first surface of the plate-shaped silicon; and another surface of the substrate, which is continuous with the first surface of the substrate, to form the plate-shaped silicon surface. A normal vector of the other surface of the substrate forms an anti-parallel or obtuse angle surface with the normal vector of the first surface of the substrate. 5. The method for manufacturing plate-shaped silicon according to item 4 of the scope of patent application, wherein a groove structure is formed on the peripheral edge portion of the first surface of the substrate with at least two grooves parallel to the direction of the silicon melt immersion. 6. The method of manufacturing plate-shaped silicon as described in item 4 of the patent application, wherein the other surface that is continuous with the first surface of the plate-shaped chip is opened from the front part of the substrate in the forward direction. 7. A solar cell, which is manufactured by using the first side of a plate-shaped stone XI in the scope of patent application. 87327.DOC 1231261 A substrate for manufacturing plate-shaped silicon, comprising a first surface of a substrate forming a first surface of plate-shaped silicon and a substrate other surface continuous with the first surface of the substrate to form a plate-shaped silicon surface, characterized in that it comprises at least A normal vector 9 on the other surface of the substrate forms an anti-parallel or obtuse surface with the normal vector on the first surface of the substrate. For example, the substrate for manufacturing a plate-shaped silicon according to item 8 of the patent application, wherein a groove structure is formed on the peripheral edge portion of the first surface of the substrate with at least two grooves parallel to the direction of immersion of the silicon melt. 10. According to the scope of the patent application, the 8th member of Gudi's plate-shaped silicon manufacturing substrate, wherein the groove structure is formed with three grooves along the peripheral portion of the second-mth surface of the substrate. 87327.DOC -2-