AU2003254919A1 - Plate-type silicon, method of producing the plate-type silicon, solar battery, and base plate for producing the plate-type silicon - Google Patents

Plate-type silicon, method of producing the plate-type silicon, solar battery, and base plate for producing the plate-type silicon

Info

Publication number
AU2003254919A1
AU2003254919A1 AU2003254919A AU2003254919A AU2003254919A1 AU 2003254919 A1 AU2003254919 A1 AU 2003254919A1 AU 2003254919 A AU2003254919 A AU 2003254919A AU 2003254919 A AU2003254919 A AU 2003254919A AU 2003254919 A1 AU2003254919 A1 AU 2003254919A1
Authority
AU
Australia
Prior art keywords
plate
type silicon
producing
solar battery
base plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003254919A
Inventor
Ryuichi Oishi
Yoshihiro Tsukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of AU2003254919A1 publication Critical patent/AU2003254919A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
AU2003254919A 2002-08-12 2003-08-08 Plate-type silicon, method of producing the plate-type silicon, solar battery, and base plate for producing the plate-type silicon Abandoned AU2003254919A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002234732 2002-08-12
JP2002-234732 2002-08-12
PCT/JP2003/010187 WO2004016836A1 (en) 2002-08-12 2003-08-08 Plate-type silicon, method of producing the plate-type silicon, solar battery, and base plate for producing the plate-type silicon

Publications (1)

Publication Number Publication Date
AU2003254919A1 true AU2003254919A1 (en) 2004-03-03

Family

ID=31884357

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003254919A Abandoned AU2003254919A1 (en) 2002-08-12 2003-08-08 Plate-type silicon, method of producing the plate-type silicon, solar battery, and base plate for producing the plate-type silicon

Country Status (4)

Country Link
JP (1) JP4134036B2 (en)
AU (1) AU2003254919A1 (en)
TW (1) TWI231261B (en)
WO (1) WO2004016836A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4073941B2 (en) * 2006-06-16 2008-04-09 シャープ株式会社 Substrate for solid phase sheet growth and method for producing solid phase sheet
JP2008007254A (en) * 2006-06-28 2008-01-17 Sharp Corp Conveyance method and conveyance device for sheet-like substrate
JP4925752B2 (en) * 2006-07-10 2012-05-09 シャープ株式会社 Sheet-like substrate peeling apparatus and sheet-like substrate peeling method
SG190514A1 (en) 2011-11-28 2013-06-28 Sino American Silicon Prod Inc Crystalline silicon ingot and method of fabricating the same
TWI557281B (en) * 2015-07-17 2016-11-11 Sino American Silicon Prod Inc Polycrystalline silicon ingot, polycrystalline silicon brick and polycrystalline silicon wafer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152734U (en) * 1983-03-31 1984-10-13 株式会社ほくさん Production plate for polycrystalline silicon wafers
JP4111669B2 (en) * 1999-11-30 2008-07-02 シャープ株式会社 Sheet manufacturing method, sheet and solar cell
JP4039057B2 (en) * 2001-12-27 2008-01-30 神鋼電機株式会社 Deposition substrate

Also Published As

Publication number Publication date
JPWO2004016836A1 (en) 2005-12-02
TW200418632A (en) 2004-10-01
TWI231261B (en) 2005-04-21
WO2004016836A1 (en) 2004-02-26
JP4134036B2 (en) 2008-08-13

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase