TW200417106A - Semiconductor device with surge protection circuit - Google Patents
Semiconductor device with surge protection circuit Download PDFInfo
- Publication number
- TW200417106A TW200417106A TW092116502A TW92116502A TW200417106A TW 200417106 A TW200417106 A TW 200417106A TW 092116502 A TW092116502 A TW 092116502A TW 92116502 A TW92116502 A TW 92116502A TW 200417106 A TW200417106 A TW 200417106A
- Authority
- TW
- Taiwan
- Prior art keywords
- diffusion layer
- layer
- aforementioned
- cathode
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000009792 diffusion process Methods 0.000 claims abstract description 149
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims description 18
- 230000005684 electric field Effects 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 9
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 204
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 238000002513 implantation Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 210000000078 claw Anatomy 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 1
- 241000272470 Circus Species 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 101100343498 Mus musculus Lipn gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241001674048 Phthiraptera Species 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 101100510671 Rattus norvegicus Lnpep gene Proteins 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000036461 convulsion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
- B09B—DISPOSAL OF SOLID WASTE NOT OTHERWISE PROVIDED FOR
- B09B1/00—Dumping solid waste
- B09B1/008—Subterranean disposal, e.g. in boreholes or subsurface fractures
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F11/00—Treatment of sludge; Devices therefor
- C02F11/02—Biological treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/40—Bio-organic fraction processing; Production of fertilisers from the organic fraction of waste or refuse
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Water Supply & Treatment (AREA)
- Hydrology & Water Resources (AREA)
- Molecular Biology (AREA)
- Computer Hardware Design (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003052780 | 2003-02-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200417106A true TW200417106A (en) | 2004-09-01 |
Family
ID=32923413
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092116502A TW200417106A (en) | 2003-02-28 | 2003-06-18 | Semiconductor device with surge protection circuit |
| TW093104537A TWI235537B (en) | 2003-02-28 | 2004-02-24 | Semiconductor device with surge protection circuit |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093104537A TWI235537B (en) | 2003-02-28 | 2004-02-24 | Semiconductor device with surge protection circuit |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR100628873B1 (ko) |
| CN (1) | CN1311551C (ko) |
| DE (1) | DE10351976A1 (ko) |
| TW (2) | TW200417106A (ko) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5619657A (en) * | 1979-07-26 | 1981-02-24 | Mitsubishi Electric Corp | Semiconductor ic |
| US4722910A (en) * | 1986-05-27 | 1988-02-02 | Analog Devices, Inc. | Partially self-aligned metal contact process |
| IT1253682B (it) * | 1991-09-12 | 1995-08-22 | Sgs Thomson Microelectronics | Struttura di protezione dalle scariche elettrostatiche |
| JPH05206385A (ja) * | 1991-12-03 | 1993-08-13 | Nec Corp | 半導体装置 |
| US6268639B1 (en) * | 1999-02-11 | 2001-07-31 | Xilinx, Inc. | Electrostatic-discharge protection circuit |
-
2003
- 2003-06-18 TW TW092116502A patent/TW200417106A/zh unknown
- 2003-11-07 DE DE10351976A patent/DE10351976A1/de not_active Ceased
-
2004
- 2004-02-20 KR KR1020040011559A patent/KR100628873B1/ko not_active IP Right Cessation
- 2004-02-24 TW TW093104537A patent/TWI235537B/zh not_active IP Right Cessation
- 2004-03-01 CN CNB2004100286429A patent/CN1311551C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040077475A (ko) | 2004-09-04 |
| DE10351976A1 (de) | 2004-09-30 |
| CN1311551C (zh) | 2007-04-18 |
| CN1525567A (zh) | 2004-09-01 |
| KR100628873B1 (ko) | 2006-09-27 |
| TW200505125A (en) | 2005-02-01 |
| TWI235537B (en) | 2005-07-01 |
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