200416458 玖、發明說明： [發明所屬之技術領域] 本發明是有關於一種回收用於液晶顯示（LCD)或薄膜 電晶體··液晶顯示（TFT-LCD)之玻璃基底的方法，且特別是 有關於一種利用電漿使用選擇性移除玻璃基底上所形成之 負光阻上的聚亞醯胺有機配向層以回收玻璃基底的方法。 [先前技術] 在眾多發展之平面顯示元件中，LCD與TFT-LCD在 最受人囑目而製造最多的。一般而言，LCD元件基本上是 由一玻璃基底，以及形成於基底相對面間之電極所構成。 而在電極之間形成有柱間隙物、突出物與樹脂黑色矩陣 (resin BM)，與一聚亞醯胺有機配向層（alignment layer)覆 蓋於其上。然後，一液晶注入至基底並密封該基底，而形 成LCD元件。 上述過程中，覆蓋配向（對準）層之方法如下。首先，在 淸洗覆蓋有柱間隙物之玻璃基底之後，將聚亞醯胺印刷至 基底上並（預先）固化（procuring)之。然後，檢測該配向層 之狀態，若是該配向層狀態良好，則進行次要之固化 (secondary curing)。接著，將該配向層摩擦配向（rub)便於 液晶排列。上述過程中若是該預先固化之基底狀態不佳， 則該基底會被轉至基底回收程序而被回收使用。而狀態不 佳之基底，就算是已經過次要固化，也同樣會被轉送至回 收程序。 如前所述，在製造LCD元件之過程中，常在覆蓋聚亞 11655pif.doc/008 6 醯胺有機配向層於基底上後發現不良之基底，而需要回 收。要回收基底，需要移除覆蓋於形成有柱間隙物之玻璃 基底上的聚亞醯胺配向層。傳統上，聚亞醯胺有機配向層 之移除完全是使用濕式方法。 也就是說’傳統濕式移除聚亞醒胺配向層之方法，是使 用一溶劑如四甲基氫氧化銨，於要被回收覆有聚亞醯胺配 向層之基底上，以分離該聚亞醯胺配向層（亦即爲一剝離 程序）。接下來，刷拂剝離配向層之基底並以一中性溶液 淸洗，然後以旋轉乾燥該基底，而回收再使用該基底。 但是，傳統濕式移除方法有相當多問題。首先，前述使 用一溶劑剝離聚亞醯胺配向層之方法，無法完全移除配向 層’而不能提供具一定品質之回收基底。一般而言，濕式 移除方法中使用之溶劑會滲透到基底與聚亞醯胺之間來進 行剝離。但是，其中溶劑先滲透進入一部位所造成之剝離 程度是與後續滲透所造成之剝離程度不相當。因此，造成 聚亞醯胺配向層之剝離不均勻。特別是，當基底是在覆以 聚亞醯胺且預先固化之階段被回收時，聚亞醯胺有機配向 層較容易移除。但當基底是在次要固化之後再回收，因配 向層已牢固固著於基底上，很難完全移除配向層。因此， 當基底經歷次要固化之後，想要回收而獲得原來之基底， 是相當困難的。 其次，濕式方法生產線設備與程序製成而成本很高，且 需要龐大工作空間。且濕式方法使用大量有機溶劑，更需 花錢購買處理回收廢水設備系統，因而所費不貲；若處理 11655pif.doc/008 7 200416458 不當更會造成嚴重環境污染。 此外，當使用濕式方法之有機溶劑時’無法選擇性地只 移除聚亞醯胺配向層，而完全或部分保留配向層下之柱間 隙物、突出物與樹脂黑色矩陣。因此，若使用濕式方法來 回收基底，則必須再度於回收使用之基底上形成負光阻如 柱間隙物。 [發明內容]200416458 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method for recovering a glass substrate used in a liquid crystal display (LCD) or a thin film transistor. · Liquid crystal display (TFT-LCD). A method for using a plasma to selectively remove a polyimide organic alignment layer on a negative photoresist formed on a glass substrate to recover the glass substrate. [Prior art] Among the many developed flat display elements, LCDs and TFT-LCDs are the most widely manufactured. Generally speaking, an LCD element is basically composed of a glass substrate and electrodes formed between opposite sides of the substrate. Between the electrodes, pillar spacers, protrusions and resin black matrix (resin BM) are formed, and a polyimide organic alignment layer is covered thereon. Then, a liquid crystal is injected into the substrate and the substrate is sealed to form an LCD element. In the above process, the method of covering the alignment (alignment) layer is as follows. First, after washing the glass substrate covered with the column spacer, polyurethane is printed on the substrate and (pre) cured. Then, the state of the alignment layer is detected, and if the state of the alignment layer is good, a secondary curing is performed. Next, the alignment layer is rubbed to facilitate alignment of the liquid crystal. If the pre-cured substrate is in a poor state in the above process, the substrate will be transferred to a substrate recycling process and recycled. Substandard substrates, even if they have undergone minor curing, are also transferred to the recycling process. As mentioned earlier, in the process of manufacturing LCD elements, a poor substrate is often found after covering the polyamine 11655pif.doc / 008 6 amine organic alignment layer on the substrate, and it needs to be recovered. To recover the substrate, it is necessary to remove the polyimide alignment layer covering the glass substrate formed with the column spacer. Traditionally, the removal of the polyimide organic alignment layer has been performed using a wet method. In other words, the traditional method of wet-type removal of the polyimide alignment layer is to use a solvent such as tetramethylammonium hydroxide on the substrate to be recovered and covered with the polyimide alignment layer to separate the polyimide alignment layer. Imidine alignment layer (ie, a stripping process). Next, the substrate of the peeling alignment layer is brushed and washed with a neutral solution, and then the substrate is spin-dried to recover and reuse the substrate. However, conventional wet removal methods have considerable problems. First, the aforementioned method of peeling the polyimide alignment layer using a solvent cannot completely remove the alignment layer 'and cannot provide a recycled substrate with a certain quality. In general, the solvent used in the wet removal method will penetrate between the substrate and the polyimide for peeling. However, the degree of peeling caused by the first penetration of the solvent into a part is not comparable to the degree of peeling caused by the subsequent penetration. Therefore, uneven peeling of the polyimide alignment layer is caused. In particular, when the substrate is recovered at a stage of being coated with polyimide and pre-cured, the polyimide organic alignment layer is relatively easy to remove. However, when the substrate is recovered after secondary curing, it is difficult to completely remove the alignment layer because the alignment layer is firmly fixed to the substrate. Therefore, it is quite difficult to recover the original substrate after the substrate has undergone secondary curing. Secondly, the wet method production line equipment and procedures are expensive and require a large amount of work space. In addition, the wet method uses a large amount of organic solvents, and it also costs money to purchase equipment for treating and recycling waste water, so the cost is high; improper treatment will cause serious environmental pollution. In addition, when using the organic solvent of the wet method, it is not possible to selectively remove only the polyimide alignment layer, and completely or partially retain the pillar spacers, protrusions, and resin black matrix under the alignment layer. Therefore, if a wet method is used to recover the substrate, a negative photoresist, such as a column gap, must be formed on the recovered substrate again. [Inventive Content]
爲解決前述問題，本發明提供一種有效率循環回收基 底之方法，經由選擇性移除玻璃基底上所形成之負光阻上 的有機聚亞醯胺配向層，其係針對使用於LCD或TFT-LCD 之玻璃基底，並不使用傳統濕式方式而是使用乾式電漿方 法。 本發明中，聚亞醯胺配向層甚至可以在次要固化階段 之後仍能被輕易移除。此外，聚亞醯胺配向層可以被包括 使用電漿之乾式方式移除，而非使用有機溶劑。同時，本 發明之方法能保留聚亞醯胺配向層下之負光阻，而改善基 底回收效率。 爲達成前述之目的，本發明提供一種選擇性移除玻璃 基底上所形成之負光阻上的有機聚亞醯胺配向層之方法， 以及使用一電漿裝置將玻璃基底回收的方法，該電漿裝置 具有反應室，而反應室經由施加一高頻率功率至一電極而 產生電發。該方法包括下列步驟：將覆以有機聚亞醯胺配 向層且形成有負光阻的玻璃基底置入反應室中，然後將壓 力維持在100〜900 mTorr，通入一氧氣02/氮氣N2之混和 8 11655pif.doc/0〇8 200416458 氣體至反應室中以維持壓力，以及施加1〜20千瓦之功率 至電漿裝置之電極上，以產生電漿，而使聚亞醯胺有機配 向層選擇性地被分解。而混和氣體〇2/N2之混和比例之範 圍’較佳是在體積2 : 1至體積1 : 2之間的範圍。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂’下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： [實施方式] 在此，配合圖示，將更進一步描述本發明之內容。 請參照第1圖，其繪示依照本發明一較佳實施例的一種 電漿裝置，用於移除聚亞醯胺配向層並回收基底。 本發明之電漿裝置並不被此實施例所示所限制，而其係 在能達成本發明之目的範圍內可以被修正或更動。 簡述本發明此較佳實施例中之電漿裝置，平行之平板電 極之一第一電極11裝置於反應室10中，一第二電極12 置於於反應室上部面對第一電極11。於第一電極11上， 置有一欲處理之物件（wofkpiece)lOO。該物件100例如是 一玻璃基底101，在TFT-LCD基底製造流程中被視爲是品 質不佳而需回收的基底。於玻璃基底101上，形成負光阻 103，成複數個柱間隙物以便在裝配組合流程中與另一面 對之基底（未圖示）保持空隙，形成MVA模式突出物以獲得 光學視角，或是形成樹脂黑色矩陣(BM)。負光阻1〇3可經 由微影蝕刻常用光阻而形成。 弟一電極11連結於一^牽引電極（drawing electrode) 13， 11655pif.doc/008 9 200416458 其延伸出反應室10之外，該牽引電極13亦連接於電源15 以接收高頻率電力（功率)供應來產生電漿。該牽引電極13 經由絕緣設備14而與反應室1〇隔絕。 此外，第二電極12裝置於反應室1〇中第一電極η之 對面，並激發反應室10中之反應氣體而產生電漿。 反應室10具有入口 16以通入反應氣體產生電漿，以及 出口 17以於反應後排出氣體。 使用上述裝置依照本發明移除配向層之程序描述如下。 將物件100至於反應室10，同時，反應室10之壓力維 持在大約10 mToir〜900 mTorr之間。接著經由入口 16通 入反應氣體至反應室10,而反應氣體使用氧氣〇2與氮氣 N2之混和氣體。當通入反應氣體時，反應室1〇內壓力保 持恆定。 由電源15施加約1〜20千瓦(kwatt)之一高頻功率於電 極11上以產生〇2/N2電漿。此高反應性反應氣體會解離、 被激發並離子化，反應如下式所列。 化學反應式1 〇2 — Ο + 0 〇2 + e —> 02* + e 02 一20+ + 2e O + e — Ο-N2 ->N + N N2 + e — N2 + e N2 — 2N+ + 2e O + e — 0* + e 〇2 —〇2十 + e 202+ + 3e —〇_ + 〇3 0 + 2e ->〇2"In order to solve the foregoing problem, the present invention provides a method for efficiently recycling a substrate by selectively removing an organic polyimide alignment layer on a negative photoresist formed on a glass substrate, which is directed to use in LCD or TFT- The glass substrate of LCD does not use the traditional wet method but uses the dry plasma method. In the present invention, the polyimide alignment layer can be easily removed even after the secondary curing stage. In addition, the polyimide alignment layer can be removed in a dry manner including using a plasma instead of using an organic solvent. At the same time, the method of the present invention can retain the negative photoresist under the polyimide alignment layer and improve the substrate recovery efficiency. In order to achieve the foregoing object, the present invention provides a method for selectively removing an organic polyimide alignment layer on a negative photoresist formed on a glass substrate, and a method for recycling the glass substrate using a plasma device. The slurry device has a reaction chamber, and the reaction chamber generates electric power by applying a high-frequency power to an electrode. The method includes the following steps: placing a glass substrate covered with an organic polyimide alignment layer and forming a negative photoresist into a reaction chamber, and then maintaining the pressure at 100-900 mTorr, and passing in an oxygen 02 / nitrogen N2 Mixing 8 11655pif.doc / 0〇200416458 gas into the reaction chamber to maintain pressure, and applying 1 ~ 20 kW of power to the electrodes of the plasma device to generate the plasma, so that the polyimide organic alignment layer is selected Sexually decomposed. The range of the mixing ratio of the mixed gas 02 / N2 is preferably in a range between volume 2: 1 and volume 1: 2. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, hereinafter, a preferred embodiment is described in detail with the accompanying drawings as follows: [Embodiment] Here, with reference to the drawings The present invention will be further described. Please refer to FIG. 1, which illustrates a plasma device according to a preferred embodiment of the present invention for removing a polyimide alignment layer and recovering a substrate. The plasma device of the present invention is not limited to that shown in this embodiment, but it can be modified or changed within the scope of achieving the purpose of the invention. The plasma device in this preferred embodiment of the present invention is briefly described. One of the parallel flat electrodes, the first electrode 11 is installed in the reaction chamber 10, and a second electrode 12 is placed on the upper part of the reaction chamber to face the first electrode 11. On the first electrode 11, a wofkpiece 100 to be processed is placed. The object 100 is, for example, a glass substrate 101, which is regarded as a substrate of poor quality and needs to be recycled in the TFT-LCD substrate manufacturing process. On the glass substrate 101, a negative photoresist 103 is formed, and a plurality of column gaps are formed to maintain a gap with another facing substrate (not shown) during the assembly and assembly process to form a MVA mode protrusion to obtain an optical viewing angle, Forms a resin black matrix (BM). Negative photoresist 103 can be formed by photoresist commonly used in lithographic etching. The first electrode 11 is connected to a drawing electrode 13, 11655pif.doc / 008 9 200416458 which extends beyond the reaction chamber 10. The drawing electrode 13 is also connected to a power source 15 to receive a high-frequency power (power) supply. To generate plasma. The traction electrode 13 is isolated from the reaction chamber 10 via an insulating device 14. In addition, the second electrode 12 is installed opposite to the first electrode η in the reaction chamber 10 and excites the reaction gas in the reaction chamber 10 to generate a plasma. The reaction chamber 10 has an inlet 16 for passing in a reaction gas to generate a plasma, and an outlet 17 for exhausting the gas after the reaction. The procedure for removing the alignment layer using the above device according to the present invention is described below. The object 100 is placed on the reaction chamber 10, and at the same time, the pressure of the reaction chamber 10 is maintained between about 10 mToir and 900 mTorr. Then, the reaction gas is introduced into the reaction chamber 10 through the inlet 16, and the reaction gas is a mixed gas of oxygen 02 and nitrogen N2. When the reaction gas is introduced, the pressure in the reaction chamber 10 is kept constant. A high-frequency power of about 1 to 20 kilowatts (kwatt) is applied from the power source 15 to the electrode 11 to generate 02 / N2 plasma. This highly reactive reactive gas is dissociated, excited, and ionized, and the reaction is listed below. Chemical reaction formula 1 〇2 — 〇 + 0 〇2 + e —> 02 * + e 02 a 20+ + 2e O + e — 〇-N2-> N + N N2 + e — N2 + e N2 — 2N + + 2e O + e — 0 * + e 〇2 — 〇2 十 + e 202+ + 3e — 〇_ + 〇3 0 + 2e-> 〇2 "
N + e > N + e N2 —N2+ + e N + c ~~> NN + e > N + e N2 --N2 + + e N + c ~~ > N
11655pif.doc/008 10 200416458 N + 2e -> Ο2' N + 3e ->N3' 在該反應過程中’第二反應與弟二反應混和。此外’ 〇广、 〇-、〇3、N-、N2·、N3-即時獲得電子而產生不穩定與高反 應性之自由基如〇*、〇2*、〇3*、N*、N2*等。 所產生之自由基破壞物件100中聚亞醯胺組成的配向廢 102之分子偶合鍵結，而將其分解成爲有機分子如氮、氣 與碳。分解的聚亞醯胺分子與反應式中氧與氮結合’而轉 化成爲CO、C02、NO、N02、H20等’而從出口 17排出。 此時，化學反應式如下。11655pif.doc / 008 10 200416458 N + 2e-> Ο2 'N + 3e-> N3' During this reaction, the 'second reaction is mixed with the second reaction. In addition, 〇 广, 〇-, 〇3, N-, N2 ·, N3- instantaneously obtain electrons and generate unstable and highly reactive free radicals such as 〇 *, 〇2 *, 〇3 *, N *, N2 * Wait. The generated free radicals destroy the molecular coupling bonds of the alignment waste 102 composed of polyimide in the object 100, and decompose them into organic molecules such as nitrogen, gas, and carbon. The decomposed polyimide molecule is combined with oxygen and nitrogen in the reaction formula 'to be converted into CO, C02, NO, N02, H20, etc.' and discharged from the outlet 17. At this time, the chemical reaction formula is as follows.
化學反應式2 C- + 〇+ — CO 〇+ + 〇·— 〇2 Ν' + 02+ -> N02 N- + 0+ — NO 根據本發明，該反應係均勻地發生於整個基底。 相反地，自由基離子顯示有選擇性反應性，針對部分或 全部位於基底之配向層102下的負光阻103如柱間隙物、 MVA模式之突出物以獲得視角，或樹脂黑色矩陣。負光 阻103之組成包括一結合劑(binder)、一光學交互鍵結劑 (optical cross-link agent)、一光學反應促使劑（〇ptical initiator)、一溶劑或其他添加物。當該結合劑之分子纛® 交互鍵結反應或曝光引致光聚合反應而顯著增加時，該負 11655pif.doc/008 11 200416458 光阻103會顯示具明顯改善的熱特性、化學阻抗値與反應 穩定性，而與正光阻不同。因此，負光阻1〇3不易被自由 基分解，而混合之氮氣更改善負光阻對自由基分解之化學 阻抗値，而使負光阻被保留住。至於負光阻之主要成分結 合劑，除了聚乙烯醇聚合物與聚異戊二烯聚合物外，主要 使用間丙烯酸酯聚合物。除此之外，亦可以使用許多種聚 合物，揭示於韓國專利公告號1998-22330 ;以及適合本發 明目的之針對自由基分解具有較優化學阻抗値之負光阻等 皆可使用。當考慮聚亞醯胺配向層之分解性與負光阻之分 解阻抗値，〇2/N2混和氣體之最適當混合比例是在體積2 : 1〜體積1 : 2之範圍之間。 如上所述，剝離基底上所覆之聚亞醯胺配向層102可以 利用02/N2電發蝕刻來選擇性地均勻移除，但保留部分或 全部位於聚亞醯胺配向層下的負光阻。 實施例 欲處理之一物件，該物件包括有散佈色素之負光阻（其 包含甲基丙烯酸苄酯/甲基丙烯酸（benzyl methacrylate/methacrylic acid)(日本 FUJI 相片公司製造）作 爲結合劑)所組成之彩色濾色層(color filter layer)，其具一 顏色且以旋佈法形成，以及包括厚度約500埃（A)之一聚 亞醯胺配向層，而兩層依序形成於尺寸爲600X 700X 0.7mm3之一玻璃基底之上。將該物件置於容積丨〇〇升之電 漿反應裝置中，再抽真空。當通入02/N2混和氣體（以1 ·· 1之比例）至真空電獎反應裝置中，通入流速爲1500 seem(每 11655pif.doc/008 12 200416458 分鐘標準立方公分；0°C於一大氣壓），施加2千瓦（kwatt) 之功率以產生電獎，而反應進行40秒左右。 反應之後’將基底從反應裝置移出並檢查其表面。檢查 結果，發現聚亞醯胺配向層被完全移除而1024x 765細胞 均無缺陷。此外，測量基底配向層下之彩色過濾層之色彩 敏感度（color sensitivity)，發現色彩敏感度小於2%，故保 持原狀。 產業利用件 本發明之移除基底上有機配向層之方法具有下列優點。 首先’其係使用乾式方法於電漿反應裝置移除有機聚亞 醯胺配向層，故本發明不需要大規模之儀器裝置，而配向 層之移除爲低成本。此外，與傳統濕式方法相較，乾式方 法較容易操作與維護。 第二，傳統濕式方式很難移除經次要固化後之聚亞醯胺配 向層，而本發明採用之乾式方法可完全移除聚亞醯胺配向 層，就算是已經過次要固化之聚亞醯胺配向層亦可以移 除。這顯示本發明可以有效地會收基底，而在傳統上因配 向層移除困難而少被回收使用。 第三，既然使用電漿乾式方式移除聚亞醯胺配向層，本 發明無須使用大量有機溶劑中，避免環境污染；相反地， 傳統濕式方式需要大量溶劑而有危害環境之虞。 第四，依照本發明之方法有機聚亞醯胺配向層之分解是 以氣態狀態被移除，固無須使用額外流程以中性溶液來淸 洗回收基底與乾燥淸洗過之基底等。 11655pif.doc/008 13 200416458 第五，傳統濕式方式之回收不均勻且良率低，因配向層 是因有機溶劑造成剝離而在基底邊緣與中心部位之移除率 不同。但本發明因使用電漿之化學反應而在各部位配向層 之移除並無差異，而能明顯改善基底回收良率。 第六，傳統濕式方式不僅移除聚亞醯胺配向層，也會移 除負光阻物質如部分或全部在配向層下之間隙物，係因爲 使用大量溶劑而有強溶解力。而本發明可以選擇性移除配 向層，經由使用〇2/N2混和氣體來限制對負光阻之反應性。 因此，本發明可以改善基底回收效率並減少後續製程。 雖然本發明已以一較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍內，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者爲準。 [圖式簡單說明] 第1圖是繪w依照本發明一較佳實施例的一種電獎裝 置，用於移除聚亞醯胺配向層並回收基底。 代表符號簡單說明： 10 :反應室 11 :第一*電極 12 :第二電極 13 ··牽引電極（drawing electrode) 14 :絕緣設備 15 :電源 16 :入口 11655pif.doc/008 14 200416458 17 :出口 100 :物件 101 :玻璃基底 102 :配向層 103 :負光阻 11655pif.doc/008 15Chemical reaction formula 2 C- + 〇 +-CO 〇 + + 〇 ·-〇2 Ν '+ 02+-> N02 N- + 0+-NO According to the present invention, the reaction occurs uniformly throughout the substrate. In contrast, free radical ions show selective reactivity against negative photoresist 103 such as pillar spacers, MVA mode protrusions partially or entirely under the alignment layer 102 of the substrate to obtain a viewing angle, or a resin black matrix. The composition of the negative photoresist 103 includes a binder, an optical cross-link agent, an optical initiator, a solvent or other additives. The negative 11655pif.doc / 008 11 200416458 photoresistor 103 will show significantly improved thermal properties, chemical resistance, and stable reaction when the molecular weight of the binder 纛 ® cross-linking reaction or exposure causes a significant increase in photopolymerization. It is different from positive photoresistance. Therefore, the negative photoresist 103 is not easily decomposed by the free radical, and the mixed nitrogen gas improves the chemical resistance of the negative photoresist to free radical decomposition, and the negative photoresist is retained. As for the main component binder of negative photoresist, in addition to polyvinyl alcohol polymer and polyisoprene polymer, m-acrylate polymer is mainly used. In addition, many kinds of polymers can also be used, which are disclosed in Korean Patent Publication No. 1998-22330; and negative photoresists having a more optimized impedance 値 for radical decomposition suitable for the purpose of the present invention can be used. When considering the decomposability of the polyimide alignment layer and the resolution resistance of the negative photoresistance 〇, the most appropriate mixing ratio of the 〇2 / N2 mixed gas is in the range of volume 2: 1 to volume 1: 2. As described above, the polyimide alignment layer 102 covered on the peeling substrate can be selectively and uniformly removed by 02 / N2 electro-etching, but retains part or all of the negative photoresist located under the polyimide alignment layer. . An object to be processed in the embodiment is composed of a negative photoresist (including benzyl methacrylate / methacrylic acid (manufactured by FUJI Photo Co., Ltd., Japan) as a binding agent) with a dispersing pigment. A color filter layer, which has a color and is formed by a spin-on method, and includes a polyurethane alignment layer having a thickness of about 500 angstroms (A), and two layers are sequentially formed at a size of 600X 700X 0.7mm3 on a glass substrate. The object was placed in a plasma reactor with a volume of 1000 liters and evacuated. When the 02 / N2 mixed gas (in the ratio of 1 ·· 1) is passed into the vacuum electric award reaction device, the flow rate is 1500 seem (per 11655pif.doc / 008 12 200416458 minutes standard cubic centimeters; 0 ° C at 1 Atmospheric pressure), a power of 2 kilowatts (kwatt) is applied to generate an electric prize, and the reaction proceeds for about 40 seconds. After the reaction ', the substrate is removed from the reaction apparatus and its surface is inspected. As a result of inspection, it was found that the alignment layer of polyimide was completely removed and no defects were found in 1024x765 cells. In addition, the color sensitivity of the color filter layer under the substrate alignment layer was measured, and it was found that the color sensitivity was less than 2%, so it remained as it was. Industrial Utilization Method The method for removing an organic alignment layer on a substrate of the present invention has the following advantages. First, it uses a dry method to remove the organic polyurethane alignment layer in the plasma reaction device. Therefore, the present invention does not require a large-scale instrument and device, and the removal of the alignment layer is low cost. In addition, compared with traditional wet methods, dry methods are easier to operate and maintain. Second, it is difficult to remove the polyimide alignment layer after the secondary curing by the traditional wet method, and the dry method adopted in the present invention can completely remove the polyimide alignment layer, even if it has been subjected to the secondary curing. The polyimide alignment layer can also be removed. This shows that the present invention can effectively collect the substrate, and has traditionally been rarely used because of difficulty in removing the alignment layer. Third, since the polyimide alignment layer is removed by a plasma dry method, the present invention does not need to use a large amount of organic solvents to avoid environmental pollution; on the contrary, the traditional wet method requires a large amount of solvents and may be harmful to the environment. Fourth, the decomposition of the organic polyimide alignment layer according to the method of the present invention is removed in a gaseous state, and there is no need to use an additional process to wash the recovered substrate and the dried washed substrate with a neutral solution. 11655pif.doc / 008 13 200416458 Fifth, the traditional wet method has uneven recovery and low yield. Because the alignment layer is peeled off by organic solvents, the removal rate is different at the edge and center of the substrate. However, in the present invention, there is no difference in the removal of the alignment layer at various locations due to the chemical reaction using the plasma, and the substrate recovery yield can be significantly improved. Sixth, the traditional wet method not only removes the polyimide alignment layer, but also removes negative photoresist materials, such as some or all of the spacers under the alignment layer, because of its strong solubility due to the use of a large amount of solvent. The present invention can selectively remove the alignment layer and limit the reactivity to negative photoresist by using a mixed gas of 02 / N2. Therefore, the present invention can improve substrate recovery efficiency and reduce subsequent processes. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make some changes and retouch without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. [Brief Description of the Drawings] FIG. 1 is a drawing of an electric award device according to a preferred embodiment of the present invention, which is used for removing a polyimide alignment layer and recovering a substrate. Brief description of representative symbols: 10: reaction chamber 11: first * electrode 12: second electrode 13 · traction electrode 14: insulation device 15: power supply 16: inlet 11655pif.doc / 008 14 200416458 17: outlet 100 : Object 101: Glass substrate 102: Alignment layer 103: Negative photoresist 11655pif.doc / 008 15