TW200411916A - Method for isolating hybrid device in image sensor - Google Patents
Method for isolating hybrid device in image sensor Download PDFInfo
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- TW200411916A TW200411916A TW092118187A TW92118187A TW200411916A TW 200411916 A TW200411916 A TW 200411916A TW 092118187 A TW092118187 A TW 092118187A TW 92118187 A TW92118187 A TW 92118187A TW 200411916 A TW200411916 A TW 200411916A
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000005468 ion implantation Methods 0.000 claims abstract description 53
- 150000004767 nitrides Chemical class 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000009413 insulation Methods 0.000 claims abstract description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 22
- 229910052796 boron Inorganic materials 0.000 claims description 22
- 230000000903 blocking effect Effects 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000002955 isolation Methods 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
200411916 玖、發明說明： 一、發明所屬之技術領域 本發明有關一種影像感測器，且更特別地有關一種能透 過拼合裝置隔離方法之使用來減少暗電流之影像感測器。 -；先HU技術 大致地，影像感測器係一種半導體裝置，其轉換光學信 號爲電性信號。特別地，電荷耦合裝置（C CD)係其中個別之 金屬氧化物矽（MOS)電容器相互緊密地設置，及電性載體 係儲存及轉移至該MOS電容器之裝置。互補型金氧半裝置 (C Μ 0 S )影像感測器則係形成Μ Ο S電晶體爲相同數目之圖 素（pixels)及採用開關模式以用於利用MOS電晶體藉使用 CMOS技術而利用控制電路及信號處理電路爲週邊電路來 順序地偵測輸出之裝置。 然而，利用C CD將由於其複雜的驅動模式，高的功率消 耗，具有許多遮罩過程步驟之複雜過程，及因爲處理電路 無法建構於CCD晶片上之單晶片實現的困難性而存在若干 問題。因此，已在C Μ Ο S影像感測器上利用次微米C Μ Ο S 技術主動地硏究來克服上述問題，該C Μ 0 S影像感測器藉 形成光二極體及Μ 0 S電晶體於一單元像素之內且然後依 序地透過切換模式偵測信號而取得影像，該CMOS技術之 使用將導致較少的功率散逸及使單晶片過程能供信號處理 電路用；同時，相較於約需3 0至4 0個光罩之c c D過程’ 以C Μ Ο S技術所實施之C Μ Ο S影像感測器因爲簡單之過程 ，約僅需要2 0個光罩，所以C Μ Ο S影像感測器目前明顯地 200411916 爲一種下一世代的影像感測器。 在典型的影像感測器中，較易產生暗電流而造成儲存電 荷之功能及能力降低，暗電流之更詳細的解說將提供於下 文中。 從光二極體移動到浮動擴散區之電子即使在光線缺少中 ' 仍會產生暗電流，尤其，暗電流係由主要存在於主動區邊 _ 緣之諸如線缺陷、點缺陷及類似物之擺盪鍵（dangling bond) 或不同缺陷所造成，此等暗電流會在低照明的環境中造成 嚴重的問題。 φ 在配置約0.35微米（μηι)或約0.25微米裝置線寬技術的 C Μ Ο S影像感測器中，當光二極體區之面積減少時，該光 二極體區之周長相對於光二極體區之面積的比例會同樣地 減少。 上述特性描繪於第1圖中。參閱第1圖，因爲除了其中 將形成轉移電晶體（transfer transistor)之表面外之光二極 體的三個表面係接觸於場絕緣層，所以當光二極體由於裝 置之微型化而面積減少時，該光二極體會受到場絕緣層之 φ 邊緣所產生之若干缺陷而有較大程度之影響，此處，光二 極體之周長僅取接觸於該場絕緣層之三個表面予以計算。 當最小線寬，例如約〇 . 2 5微米或〇 . 1 8微米減少時，相對於 影像信號之增加暗電流產生的效應會呈明顯，換言之’具 ， 有超細微線寬之此等C Μ 0 S影像感測器較易造成暗電流。 €發明內容 因此，本發明之目的在於提供一種用於隔離影像感測器 - 6- 200411916 中拼合裝置之方法，以改善暗電流特徵，即使光二極體區 之面積減少時。 根據本發明之觀點，提供有一種用於隔離影像感測器中 拼和合裝置之方法，該方法包含下列步驟··依序地形成一 墊氧化物層及一墊氮化物層於一基板上，及選擇性地去除 該墊氧化物層及該墊氮化物層以暴露其中將形成場絕緣層 之基板之一表面；藉使用該墊氮化物層爲光罩執行一通道 阻斷離子佈植過程於該所暴露之基板而形成該場絕緣層； 去除一部分之該墊氮化物層，使得該墊氮化物層之一側以 一預定之距離與該場絕緣層之一邊緣間隔開；以及藉使用 該墊氮化物層爲光罩執行一額外之離子佈植過程於該所暴 露之基板表面及該場絕緣層之上。 吗實施方式 第2 A至2 D圖係橫截面視圖，顯示根據本發明一較佳實 施例之影像感測器中之裝置隔離過程。 參閱第2A圖’將在隨後過程中使用爲裝置隔離光罩之墊 氧化物層1 1、墊氮化物層1 2及光敏層1 3係依序地形成於 一基板1 〇之上；然後，執行一裝置隔離光罩過程於一其中 將形成場絕緣層之地區。在本發明中，該基板1 〇可使用一 堆疊結構，其中一具有低濃度之磊晶層沈積於一具有高濃 度之矽層之上。 使用低濃度磊晶層之原因係因爲可藉增加光二極體之空 乏層深度來改善裝置性質及可防止具有高濃度之基板中單 元像素間之串音（c r 〇 s s - t a 1 k )現象。 200411916 參閱第2 B圖，利用裝置隔離光罩1 3來鈾刻墊氮化物層 1 2及墊氧化物層Π以暴露其中將形成場絕緣層之基板1 0 的一表面，然後去除該裝置隔離光罩1 3。 接著，藉使用所暴露之墊氮化物層1 2爲離子佈植光罩 ，執行一通道阻斷離子佈植於該基板1 0之表面以形成一 通道阻斷離子佈植區1 〇 〇。用於該通道阻斷離孑佈植’ 硼之離子佈植濃度及離子佈植能量分別約係3. 0X 1〇 13cnr 3及約係30KeV，上述通道阻斷離子佈植過程係進行無需 給予傾斜角度及定量配給。 參閱第2 C圖，接著以一熱氧化過程進行該完成有通道 阻斷離子佈植過程之基板1 〇的表面，以成長場絕緣層， 尤其是場氧化物層（Fox)。在該墊氮化物層12之上，依 序形成一光敏圖案丨4而以距離該F 〇 x邊緣一預定距離X 來鈾刻該墊氮化物層1 2，此時，該預定距離X之範圍較 佳地自大約0 · 5微米至大約1 · 〇微米。 爹閱第2D圖’該墊氮化物層1 2係利用光敏圖案1 4爲
接著’利用讀触刻之墊氮化物層1 2爲離子佈植光覃來執 行硼離子佈植過程。 此寸 ^砸離子佈植過程可以以相同於該通道阻斷離
參閱第2 D圖 或利用硼濃度範圍自大約 約5 . ο X ：[ 〇 13 c m ·3予以執行，此一適用之 〔到有關暗電流特徵之回授後方才確定。 所表示之數字符號①及②分別代表該通道 200411916 阻斷離子佈植區1 ο 0及額外地透過硼離子佈植過程所形成 之硼離子佈植區5 0。同時，如圖不，該光敏圖案1 4係在 完成該額外之硼離子佈植過程之後才去除。 根據本發明之較佳實施例，該硼離子佈植區5 0會屏蔽 Fox之邊緣，藉此改善暗電流特徵，亦即，Fox邊緣所產 生之電子會透過硼離子佈植區50處之電子-電洞配對重 組而消失。 第3圖係一平面視圖，顯示根據本發明另一較佳實施例 之具有溝渠結構之裝置隔離過程。一通道阻斷離子佈植區 ①及一硼離子佈植區②係描繪於第3圖之中。 下文係用於形成具有溝渠結構之裝置隔離區之過程之較 佳實施例的詳細說明。 緩衝氧化物層（未圖示）及墊氮化物層（未圖示）依序地沈 積於一基板2 0之上，然後利用一裝置隔離光罩選擇地蝕 刻該緩衝氧化物層及該墊氮化物層，使其中將形成溝渠之 地區暴露，接著，以該墊氮化物層爲鈾刻光罩形成該溝渠 於基板2 0之上，在該溝渠形成之後，形成一氧化物層於 該溝渠之內壁以補償當進行形成溝渠之蝕刻過程時所發生 之溝渠內壁的損壞。 然後，執行通道阻斷離子佈植過程以形成通道阻斷離子 佈植區①及以絕緣材料2 1掩埋該溝渠。該絕緣材料2 1 係透過化學機械硏磨（CMP)過程予以平面化，然後以此一 方式鈾刻該墊氮化物層之一預定部分，即，該墊氮化物層 之一側係以距離該絕緣材料2 1 —預定距離隔離開。 •9- 200411916 在上述蝕刻過程之後，利用該墊氮化物層爲硼離子佈植 光罩額外地執行硼離子佈植過程，以便形成一硼離子佈植 區②於所暴露基板2 0及絕緣材料2 1之上。接著，去除該 墊氮化物層’藉此完整地形成具有淺溝渠隔離結構之裝置 隔離區。 除了具有局部氧化之矽（L Ο C 0 S )結構之典型裝置隔離過 ‘ 程之外，本發明亦可應用於具有溝渠結構之裝置隔離過程 或多晶緩衝LOCOS(PBL)過程。 第4A圖係一平面視圖，顯示根據本發明另一較佳實施例 φ 所形成之互補型金屬氧化物半導體（CMOS)影像感測器之 單元像素中的光二極體及轉移電晶體。特別地，硼摻雜輪 廓係在接觸Fox (未圖示）之光二極體區中以一預定距離間 隔開而形成。額外離子佈植之硼離子佈植區會包圍該Fox 之邊緣，且此將提供降低暗電流之效應，即使是光二極體 之η型離子佈植區並未減少至一配合於虛線邊界內之尺寸 ，同時可預防飽和電流之減少，因爲光二極體之該離子佈 植區並不需減少來改善暗電流特徵。 鲁 第4Β圖係一橫截面視圖，顯示第4Α圖中所示Α-Α’線之 光二極體區及轉移電晶體。 第4 Β圖中所示之結構包含一形成於基板上之F ο X層3 1 . ’一形成於該F ο X層3 1之底部上之通道阻斷離子佈植區 · 3 2 A，一延伸距離該F ο X層3 1 —預定距離之硼離子佈植區 3 2 B，一形成於基板3 0內且接觸該F ο X層3 1 .之一側之光二 極體的η型離子佈植區3 4，一形成於該轉移電晶體之閘極、 喜 200411916 3 3之橫向側上之間隔物3 5，一形成於基板3 0之表面及光 二極體之η型離子佈植區3 4間之光二極體之ρ型離子佈植 區3 6，以及一形成於該光二極體之ρ型離子佈植區3 6之 另一側與該轉移電晶體上之浮動擴散區3 7。此處，該光二 極體之ρ型離子佈植區3 6之一側係接觸於間隔物丨5，而 另一側則接觸於硼離子佈植區3 2B。 如圖示，延伸距離Fox層3 1 —預定距離之硼離子佈植區 32B會屏蔽Fox層31之邊緣且此包含抑制產生自該！^0)^層 邊緣之暗電流之主動性。 在實施本發明方法於影像感測器之情況中，可透過此拼 合裝置隔離技術來改善暗電流特徵，即使是微結構，同時 ’並不需減少光二極體區來改善暗電流特徵。因此，可取 得更淸晰及良好界定之影像，因爲亦可降低飽和電流。 雖然本發明已相對於若干實施例予以描述，但對於該等 熟習於本技藝者而言將明顯的是，種種改變及修正可予以 兀成而不會背離下文申請專利範圍中所界定之本發明的範 疇。 5；圖式簡單說明 本發明之上述及其他目的及特性從上文結合附圖之較佳 實施例之說明而呈明顯，其中： 第1圖係一代表性圖示，顯示一典型影像感測器中之光 二極體周長相對於光二極體面積之比例； 第2A至2D圖係橫截面視圖，顯示根據本發明一較佳實 施例之影像感測器中之拼合裝置隔離過程； 200411916 第3圖係一橫截面視圖，顯示根據本發明另一較佳實施 例之具有溝渠結構之裝置隔離過程； 第 4A圖係一平面視圖，顯示根據本發明另一較佳實施 例之互補型金屬氧化物半導體（C Μ 0 S )之一單元像素中之 光二極體及轉移電晶體的布局；以及 第4Β圖係一相對於第4Α圖之線Α-Α’的橫截面視圖， 描繪根據本發明上述較佳實施例所形成之C Μ Ο S影像感測 器之單元像素中的光二極體及轉移電晶體。 主要部分之代表符號說明 10 基板 11 墊氧化物層 12 墊氮化物層 1 3 光敏層 14 光敏圖案 20 基板 2 1 絕緣材料 30 基板 3 1 場氧化物層 3 2 Α 通道阻斷離子佈植區 3 2 B 硼離子佈植區 3 3 閘極 34 η型離子佈植區 3 5 間隔物 3 6 ρ型離子佈植區 -12- 200411916 3 7 浮 動 擴 散 丨品 5 0 硼 離 子 佈 植 1¾ 1 00 通 道 阻 斷 離 子 佈 植 區 ① 通 道 阻 斷 離 子 佈 植 區 ② 硼 離 子 佈 植 區
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Claims (1)
- 200411916 拾、申請專利範圍： 1 . 一種用於隔離影像感測器中拼合裝置之方法ψ f亥影 像感測器含光二極體，該方法包含下列步驟： 依序地形成一墊氧化物層及一墊氮化物層於~基板 上，及選擇性地去除該墊氧化物層及該墊氮t % ® & 暴露其中將形成場絕緣層之基板之一表面； 藉使用該墊氮化物層爲光罩執行一通道阻斷離子佈 植過程於該所暴露之基板以形成該場絕緣層； 去除一部分之該墊氮化物層，使得該墊氮化物層之 一側以一預定之距離與該場絕緣層之一邊緣間隔開； 以及 藉使用該墊氮化物層爲光罩執行一額外之離子佈植 過程於該所暴露之基板表面及該場絕緣層之上。 2 .如申請專利範圍第1項之方法，其中該去除部分墊氮化 物之步驟係以一方式執行，即，該墊氮化物層係以距離 該場絕緣層邊緣一預定距離間隔開，該預定距離之範圍 自0.5微米至1·〇微米。 3 .如申請專利範圍第1項之方法，其中該離子佈植過程 係利用硼來執行。 4 ·如申請專利範圍第3項之方法，其中該硼離子佈植過 程係利用3 0 K e V之離子佈植能量及範圍在4.0 X 1 0 1 3 c m ·3與5.0 X 1 0 1 3 c m _3間的硼劑量予以進行。 -14-
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| KR100699844B1 (ko) | 2005-06-10 | 2007-03-27 | 삼성전자주식회사 | 이미지 센서의 제조 방법 |
| KR100748342B1 (ko) * | 2005-09-14 | 2007-08-09 | 매그나칩 반도체 유한회사 | 씨모스 이미지 센서의 제조방법 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2512216B2 (ja) * | 1989-08-01 | 1996-07-03 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP2602142B2 (ja) * | 1992-03-05 | 1997-04-23 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| JPH05283404A (ja) | 1992-03-31 | 1993-10-29 | Oki Electric Ind Co Ltd | 半導体装置の素子分離領域製造方法 |
| JPH1098176A (ja) * | 1996-09-19 | 1998-04-14 | Toshiba Corp | 固体撮像装置 |
| JP4604296B2 (ja) * | 1999-02-09 | 2011-01-05 | ソニー株式会社 | 固体撮像装置及びその製造方法 |
| US6534335B1 (en) * | 1999-07-22 | 2003-03-18 | Micron Technology, Inc. | Optimized low leakage diodes, including photodiodes |
| TW449939B (en) * | 2000-07-03 | 2001-08-11 | United Microelectronics Corp | Photodiode structure |
| FR2820883B1 (fr) * | 2001-02-12 | 2003-06-13 | St Microelectronics Sa | Photodiode a grande capacite |
-
2002
- 2002-07-19 KR KR1020020042650A patent/KR20040008912A/ko not_active Application Discontinuation
-
2003
- 2003-07-03 TW TW092118187A patent/TWI283062B/zh not_active IP Right Cessation
- 2003-07-09 US US10/616,155 patent/US6846722B2/en not_active Expired - Fee Related
- 2003-07-22 JP JP2003277496A patent/JP4444596B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2004056156A (ja) | 2004-02-19 |
| TWI283062B (en) | 2007-06-21 |
| US20040033667A1 (en) | 2004-02-19 |
| JP4444596B2 (ja) | 2010-03-31 |
| US6846722B2 (en) | 2005-01-25 |
| KR20040008912A (ko) | 2004-01-31 |
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