TW200411726A - Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method - Google Patents
Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method Download PDFInfo
- Publication number
- TW200411726A TW200411726A TW091138123A TW91138123A TW200411726A TW 200411726 A TW200411726 A TW 200411726A TW 091138123 A TW091138123 A TW 091138123A TW 91138123 A TW91138123 A TW 91138123A TW 200411726 A TW200411726 A TW 200411726A
- Authority
- TW
- Taiwan
- Prior art keywords
- patent application
- cleaning
- item
- silicon
- scope
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 77
- 238000004140 cleaning Methods 0.000 title claims abstract description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000010409 thin film Substances 0.000 title claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 7
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 29
- 239000000243 solution Substances 0.000 claims description 26
- 239000007800 oxidant agent Substances 0.000 claims description 23
- 230000001590 oxidative effect Effects 0.000 claims description 23
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 239000004575 stone Substances 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical group [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 235000011114 ammonium hydroxide Nutrition 0.000 claims 1
- 239000012634 fragment Substances 0.000 claims 1
- 210000004907 gland Anatomy 0.000 claims 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 47
- 235000012431 wafers Nutrition 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910021645 metal ion Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002957 persistent organic pollutant Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910017974 NH40H Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW091138123A TW200411726A (en) | 2002-12-31 | 2002-12-31 | Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method |
| US10/409,985 US6992017B2 (en) | 2002-12-31 | 2003-04-08 | Process for cleaning silicon surface and fabrication of thin film transistor by the process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW091138123A TW200411726A (en) | 2002-12-31 | 2002-12-31 | Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200411726A true TW200411726A (en) | 2004-07-01 |
| TWI307524B TWI307524B (cg-RX-API-DMAC7.html) | 2009-03-11 |
Family
ID=32653943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091138123A TW200411726A (en) | 2002-12-31 | 2002-12-31 | Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6992017B2 (cg-RX-API-DMAC7.html) |
| TW (1) | TW200411726A (cg-RX-API-DMAC7.html) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4162211B2 (ja) * | 2002-09-05 | 2008-10-08 | コバレントマテリアル株式会社 | シリコンウエハの洗浄方法および洗浄されたシリコンウエハ |
| TW575926B (en) * | 2002-11-28 | 2004-02-11 | Au Optronics Corp | Method of forming polysilicon layer and manufacturing method of polysilicon thin film transistor using the same |
| KR100570974B1 (ko) * | 2003-06-25 | 2006-04-13 | 삼성에스디아이 주식회사 | 박막 트랜지스터 |
| FR2864457B1 (fr) * | 2003-12-31 | 2006-12-08 | Commissariat Energie Atomique | Procede de nettoyage par voie humide d'une surface notamment en un materiau de type silicium germanium. |
| TWI311213B (en) * | 2004-12-24 | 2009-06-21 | Au Optronics Corp | Crystallizing method for forming poly-si films and thin film transistors using same |
| US7479460B2 (en) * | 2005-08-23 | 2009-01-20 | Asm America, Inc. | Silicon surface preparation |
| KR100875164B1 (ko) * | 2007-06-26 | 2008-12-22 | 주식회사 동부하이텍 | 웨이퍼의 세정 방법 |
| KR101469026B1 (ko) * | 2007-12-11 | 2014-12-05 | 삼성디스플레이 주식회사 | 표시 장치 및 그 표시판의 제조 방법 |
| US8492288B2 (en) | 2008-06-10 | 2013-07-23 | Micron Technology, Inc. | Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates |
| CN106687868B (zh) | 2014-09-18 | 2020-06-09 | 惠普印迪格公司 | 清洁硅光电导体 |
| CN105789325B (zh) * | 2016-04-18 | 2019-05-03 | 深圳市华星光电技术有限公司 | 薄膜晶体管、薄膜晶体管的制备方法及cmos器件 |
| KR102738040B1 (ko) * | 2019-07-12 | 2024-12-06 | 삼성디스플레이 주식회사 | 박막트랜지스터와 그것을 구비한 디스플레이 장치 및 그들의 제조방법 |
| KR102865108B1 (ko) * | 2020-12-18 | 2025-09-26 | 삼성디스플레이 주식회사 | 다결정 실리콘층의 제조 방법, 표시 장치 및 표시 장치의 제조 방법 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1239706A (en) * | 1984-11-26 | 1988-07-26 | Hisao Hayashi | Method of forming a thin semiconductor film |
| US5346833A (en) * | 1993-04-05 | 1994-09-13 | Industrial Technology Research Institute | Simplified method of making active matrix liquid crystal display |
| US5656097A (en) * | 1993-10-20 | 1997-08-12 | Verteq, Inc. | Semiconductor wafer cleaning system |
| JP3351924B2 (ja) * | 1995-01-06 | 2002-12-03 | 忠弘 大見 | 洗浄方法 |
| US6240933B1 (en) * | 1997-05-09 | 2001-06-05 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US6348157B1 (en) * | 1997-06-13 | 2002-02-19 | Tadahiro Ohmi | Cleaning method |
| US6332835B1 (en) * | 1997-11-20 | 2001-12-25 | Canon Kabushiki Kaisha | Polishing apparatus with transfer arm for moving polished object without drying it |
| US6346505B1 (en) * | 1998-01-16 | 2002-02-12 | Kurita Water Industries, Ltd. | Cleaning solution for electromaterials and method for using same |
| US6559036B1 (en) * | 1998-08-07 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| TW426874B (en) | 1998-10-14 | 2001-03-21 | United Microelectronics Corp | Method for cleaning a semiconductor wafer |
| US6099662A (en) * | 1999-02-11 | 2000-08-08 | Taiwan Semiconductor Manufacturing Company | Process for cleaning a semiconductor substrate after chemical-mechanical polishing |
| JP2001217428A (ja) * | 2000-01-25 | 2001-08-10 | Samsung Electronics Co Ltd | 低温多結晶シリコン形薄膜トランジスタ−及びその製造方法 |
| JP3875456B2 (ja) * | 2000-06-29 | 2007-01-31 | 株式会社東芝 | 洗浄方法および洗浄装置 |
| TW464972B (en) | 2000-07-18 | 2001-11-21 | Taiwan Semiconductor Mfg | Wafer cleaning process added with ozone |
| JP3893608B2 (ja) * | 2000-09-21 | 2007-03-14 | 信越半導体株式会社 | アニールウェーハの製造方法 |
| TW478062B (en) * | 2000-12-05 | 2002-03-01 | Nat Science Council | A method of surface treatment on the improvement of electrical properties for doped SiO2 films |
| KR100653263B1 (ko) * | 2000-12-29 | 2006-12-01 | 엘지.필립스 엘시디 주식회사 | 실리콘막의 결정화 방법 |
| JP2002261062A (ja) * | 2001-03-05 | 2002-09-13 | Texas Instr Japan Ltd | 半導体ウェハ上の粒子を除去する方法及び装置 |
| TWI220060B (en) * | 2001-05-10 | 2004-08-01 | Macronix Int Co Ltd | Cleaning method of semiconductor wafer |
| TW575926B (en) * | 2002-11-28 | 2004-02-11 | Au Optronics Corp | Method of forming polysilicon layer and manufacturing method of polysilicon thin film transistor using the same |
-
2002
- 2002-12-31 TW TW091138123A patent/TW200411726A/zh not_active IP Right Cessation
-
2003
- 2003-04-08 US US10/409,985 patent/US6992017B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20040127032A1 (en) | 2004-07-01 |
| TWI307524B (cg-RX-API-DMAC7.html) | 2009-03-11 |
| US6992017B2 (en) | 2006-01-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |