200410354 玫、發明說明 兒月應敘明.發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明) 【發明所屬之技術領域】 發明領域 本發明有關於用於製造半導體裝置之叢集式灰化設備 更特定言之,本發明有關於其中將一用於進行對準及 OCR(光學字元辨識)功能之單元配置於一緩衝階段中之用 於製k半導體裝置之叢集式灰化設備,藉以可在一晶圓位 於緩衝階段中的同時進行對準及〇CR程序。 並且,本發明有關於其中設有複數個轉移模組之用於 製以半導體裝置之叢集式灰化設備,各轉移模組用於將一 晶圓轉移至一處理室中,所以可以從一待命狀態同時將複 數個晶圓導入處理室中的方式來實行一半導體製造程序, 1且其中將-用於進行對準及〇CR功能之單元配置於一緩衝 P白&中故可在一晶圓位於緩衝階段中的同時進行對準及 OCR程序。 並且本舍明冑關於其中設有複數個轉移模組之用於 製造半導體裝置之叢集式灰化設備,各轉移模組用於將- 日日圓轉移至4理至中,所以可以從一待命狀態同時將複 2〇數個晶圓導入處理室中的方式來實行-半導體製造程序。 C先前】 發明背景 1又而°用於製造半導體褒置之叢集式設備係作為 多反應器式複合半導體製造設備,此製造設備係包括單一 5 200410354 玖、發明說明 共同轉移模組,其具有一基材轉移機械臂;_叢集平a, 其由複數個分離閥及伴隨的真空化元件所構成;複數:處 理模組,其位於叢集平台的各侧;及附接模組,諸如卡匣 模組等。 5 第1圖示意顯示用於製造半導體裝置之習知叢集式設 備100的一構造,參照第丨圖,以一種使—能夠自動轉移2 基材140的基材轉移模組132定位在多角形轉移模組13〇的 一中心部份上之狀態來使用一多角形轉移模組130作為基 本平台。處理室11 〇a、11 Ob及11 〇c以及第一及第二承載器 1〇室(l〇adl〇ck Chamber)12〇a及120b係分別界定於多角形轉移 模組130的各別側上,基材分別裝上及卸下第一及第二承 載器室120a及120b。 下次描述具有上述構造之習知叢集式設備1〇〇的操作 15 首先,將一可供插入一基材之卡匣(未圖示)安裝在第 一承載裔、室120a中,隨後利用一真空泵使第一承載器室 120a中的壓力降低至一預定值,若第一承載器室i2〇a中的 壓力降低至預定值,則基材轉移機械臂丨32將基材取出卡 匣外且將基材放在一用於對準基材的一平坦區之對準器 20 I22上。依此方式對準的基材係由轉移模組13〇的基材轉移 機械臂132導入第一處理室1 i.0a中,以經歷一指定程序。 在加熱基材而實行指定程序之情形中,指定程序完成之後 ,藉由基材轉移機械臂132將基材取出第一處理室丨丨〇a外 然後放在一冷卻板124上,此冷卻板124係為用於將基材冷 L ;) J 6 200410354 玖、發明說明 卻至環境溫度之所謂心心。對於各基材執行下列所有 過程:將基材取出安裝在承載器室中之卡E外、將基材導 入處理室中、f杆γ今 丁才曰疋轾序以及將已經歷指定程序的基材 在冷卻板上加以冷卻。 ίο 差 然而,習知叢集式設備的缺點在於因為一用於進行 對準及OCR功能之單元係位於卡£或基材轉移機械臂的一 側,叢集歧備的尺寸不得不增大。並且,因為對準及 〇CR程序係在基材前分開實行,亦即將一晶圓導入處理室 中’故需要加長的時間長度來完成整體程序而使生產力 並且,習知的叢集式設備中,當對於採用承載器室的 晶时行半導體製造程序時,由於晶圓逐一轉移及導入處 理至中,處於真空狀態的轉移時間將變得比待命狀態更長 ’因而使生產力變差。 並且,在習知的叢集式設備中,因為晶圓經由作為真 空化轉移室的承載器室逐一轉移至各處理室中,所以需要 刀別界定承載器室及製備真空操作式機械臂,因此製造此 设備所需要的成本不得不增高。因此,當在一灰化器或一 蝕刻器的一Lite Etch系統中實行程序時並不適宜使用昂貴 20的習知叢集式設備,其並不需要真空化轉移室,諸如用於 提升一緩衝站的產出之雙手式轉移機械臂,此緩衝站係包 括-在晶圓導入一處理室之前不需一定保持真空化狀態而 月b夠管理個別晶圓之〇CR元件、以及一能夠改善程序的精 密度之對準元件。 7 200410354 玖、發明說明 K:發明内容3 發明概要 依此,本發明已致力克服相關技術的障礙,本發明之 一目的係提供其中將一用於進行對準及0CR功能的單元配 5置於一緩衝階段中之用於製造半導體裝置的叢集式灰化設 備,藉以可在一晶圓位於緩衝階段中的同時實行一 〇cR程 序,所以不用批次方式而是以個體方式來管理譬如3〇〇公 厘的昂貴晶圓以提高良率,並得以實行額外對準程序來確 保晶圓的對準並改善一製程的精密度。 1〇 本發明之另一目的係提供其中提供複數個轉移模組之 用於製造半導體裝置之叢集式灰化設備,各轉移模組係用 於將一晶圓轉移至一處理室中,故可同時將多個晶圓導入 處理室中以增進設備的產出。 為了達成上述目的,根據本發明之一型態,提供用於 15製造半導體裝置之灰化設備,此灰化設備係包括一轉移模 組’其設有一能夠同時轉移至少兩個基材且界定有處理室 之基材轉移機械臂,其中將一緩衝階段配置為在晶圓導入 各別處理宮φ + ‘ 至甲之則,可以晶圓被基材轉移機械臂轉移導入 各別處理室中的一待命狀態來實行對準及OCR程序。 2〇 根據本發明的另一型態,灰化設備進一步包含附接至 基材轉移機械臂之複數個轉移模組,這些複數個轉移模組 係用於將已在緩衝階段中經歷對準及OCR程序之多個晶圓 導入各別處理室中。 根據本發明的另一型態,緩衝階段係包括一對準器; 8 200410354 玖、發明說明200410354 The description of the invention and the month of the invention should be described. The technical field to which the invention belongs, prior art, content, embodiments, and drawings are briefly explained. [Technical field to which the invention belongs] Field of the invention The present invention relates to a cluster for manufacturing semiconductor devices More specifically, the present invention relates to a cluster ashing method for manufacturing a semiconductor device in which a unit for performing alignment and OCR (optical character recognition) functions is arranged in a buffer stage. The device allows alignment and 〇CR procedures while a wafer is in the buffer stage. In addition, the present invention relates to a cluster ashing device for manufacturing semiconductor devices, which is provided with a plurality of transfer modules, and each transfer module is used to transfer a wafer to a processing chamber. The state simultaneously implements a semiconductor manufacturing process by introducing a plurality of wafers into the processing chamber at the same time. 1 and in which-the unit for performing alignment and 0CR functions are arranged in a buffer P & Alignment and OCR procedures are performed while the circle is in the buffer phase. In addition, Ben Shou-ming said that the cluster ashing equipment for manufacturing semiconductor devices is provided with a plurality of transfer modules. Each transfer module is used to transfer-Japanese yen to 4 months, so it can be from a standby state. The semiconductor manufacturing process is performed by introducing a plurality of 20 wafers into a processing chamber at the same time. CPreviously] Background of the Invention 1 The cluster device used for manufacturing semiconductor devices is a multi-reactor type compound semiconductor manufacturing device. This manufacturing device includes a single 5 200410354, a common transfer module for invention description, which has a Substrate transfer robotic arm; _Cluster level a, which consists of a plurality of separation valves and accompanying vacuum components; a plurality: processing modules, which are located on each side of the cluster platform; and attachment modules, such as a cassette mold Group etc. 5 FIG. 1 schematically shows a structure of a conventional cluster device 100 for manufacturing a semiconductor device. Referring to FIG. 丨, a substrate transfer module 132 capable of automatically transferring 2 substrates 140 is positioned in a polygonal shape. The state of a central portion of the transfer module 130 is to use a polygonal transfer module 130 as a basic platform. The processing chambers 11 〇a, 11 Ob and 11 oc, and the first and second carrier 10 chambers (10adlock chambers) 12a and 120b are respectively defined on the respective sides of the polygon transfer module 130. The first and second carrier chambers 120a and 120b are mounted on and removed from the substrate, respectively. Next, the operation of the conventional cluster device 100 having the above-mentioned structure is described. 15 First, a cassette (not shown) for inserting a substrate is installed in the first carrier 120a, and then a The vacuum pump reduces the pressure in the first carrier chamber 120a to a predetermined value. If the pressure in the first carrier chamber i20a decreases to a predetermined value, the substrate transfer robot arm 32 takes the substrate out of the cassette and The substrate is placed on an aligner 20 I22 for aligning a flat area of the substrate. The substrate aligned in this manner is introduced into the first processing chamber 1 i.0a by the substrate transfer robot arm 132 of the transfer module 130 to undergo a specified procedure. In the case where the specified procedure is performed by heating the substrate, after the specified procedure is completed, the substrate is taken out of the first processing chamber by the substrate transfer robot arm 132 and placed on a cooling plate 124. This cooling plate 124 is the so-called heart for cooling the base material;) J 6 200410354 玖, the description of the invention but the ambient temperature. For each substrate, perform all of the following procedures: take the substrate out of the card E installed in the carrier chamber, introduce the substrate into the processing chamber, follow the sequence of steps, and move the substrate that has undergone the specified procedure. The material is cooled on a cooling plate. ο Poor However, the disadvantage of the conventional cluster device is that because a unit for alignment and OCR functions is located on the side of the card or substrate transfer robot, the size of the cluster disparity has to be increased. And, because the alignment and OCR procedures are performed separately in front of the substrate, that is, a wafer is introduced into the processing chamber ', it takes a longer time to complete the overall procedure and increase productivity, and in the conventional cluster equipment, When the semiconductor manufacturing process is carried out for a wafer-time semiconductor using a carrier chamber, since the wafers are transferred one by one and introduced into the process, the transfer time in a vacuum state will become longer than the standby state, thereby degrading productivity. In addition, in the conventional cluster equipment, since wafers are transferred to each processing chamber one by one through a carrier chamber that is a vacuum transfer chamber, it is necessary to define the carrier chamber and prepare a vacuum-operated robotic arm, so manufacturing The cost of this equipment has to be increased. Therefore, it is not appropriate to use expensive 20 conventional cluster equipment when performing procedures in a Lite Etch system in an asher or an etcher, which does not require a vacuum transfer chamber, such as for lifting a buffer station The output of the two-handed transfer robotic arm, this buffer station includes-it is not necessary to maintain a vacuum state before the wafer is introduced into a processing chamber, and can manage individual CR components of the wafer, and a process that can be improved The precision of the alignment components. 7 200410354 发明. Description of the invention K: Summary of content 3 Summary of the invention Accordingly, the present invention has been devoted to overcoming the obstacles of the related technology. One object of the present invention is to provide a unit for performing alignment and 0CR function with 5 The cluster ashing equipment used to manufacture semiconductor devices in a buffer stage can implement a 10cR procedure while a wafer is in the buffer stage, so it is not managed in batch mode but individually, such as 3〇 0mm expensive wafers to increase yield and enable additional alignment procedures to ensure wafer alignment and improve the precision of a process. 10 Another object of the present invention is to provide a cluster ashing device for manufacturing a semiconductor device in which a plurality of transfer modules are provided, and each transfer module is used to transfer a wafer to a processing chamber. Multiple wafers are simultaneously introduced into the processing chamber to increase the output of the equipment. In order to achieve the above object, according to one aspect of the present invention, an ashing device for manufacturing a semiconductor device is provided. The ashing device includes a transfer module, which is provided with a module capable of transferring at least two substrates at the same time. In the substrate transfer robot arm of the processing chamber, a buffer stage is configured to introduce the wafer into the respective processing chamber φ + 'to A, and the wafer can be transferred to one of the respective processing chambers by the substrate transfer robot arm. Standby to perform alignment and OCR procedures. 2 According to another aspect of the present invention, the ashing device further includes a plurality of transfer modules attached to the substrate transfer robotic arm, the plurality of transfer modules are used to align and have undergone the alignment and Multiple wafers of the OCR process are introduced into respective processing chambers. According to another aspect of the present invention, the buffer stage includes an aligner; 8 200410354 玖, description of the invention
_晶圓的一凹口部份以將晶圓對準。 且當一晶 轉動晶圓, _ 圖式簡單說明 乡、’圖式由下文洋細描述更清楚地得知本發明之上 5述目的、其他特性及優點,其中: 示意圖; 第1圖為用於製造半導體裝置之一習知叢集式設備的 第2圖為根據本發明的一較佳實施例用於製造半導體 裝置之一叢集式灰化設備的構造圖; 第3圖為詳細顯示第2圖所示的灰化設備中所採用之一 緩衝階段之立體圖, 此緩衝階段係包括一對準模組及一 OCR程序模組; 第4圖顯示根據本發明的一實施例之一轉移模組的立 體圖;及 15 第5圖顯示根據本發明的一實施例之一種藉由轉移模 組將晶圓導入一處理室中之狀態的立體圖。 【貧施方式3 較佳實施例之詳細說明 現在詳細參照本發明的一較佳實施例,其一範例顯示 20於附圖中,各圖及文中盡可能以相同編號來代表相同或相 似的元件。 如第2及3圖所示,在根據本發明的一實施例之叢集式 灰化設備200中,一能夠實行一對準程序之對準器218係定 位於一冷卻階段216下方的一緩衝階段21 〇中。並且,一 9 200410354 玖、發明說明 OCR模組220係在對準器2丨8的一上端的一側及冷卻階段 216的一下端的一側定位於緩衝階段mo中。 此時’當實行一指定的半導體製造程序時,將各別晶 圓放在緩衝階段210中的轉移模組212上由一基材轉移機械 5臂2 14逐一轉移及導入一處理室222中。位於緩衝階段2工〇 中的對準器2 1 8及OCR模組220係對於在緩衝階段2 1 〇中保 持一待命狀態的晶圓實行其各別的對準及〇CR程序。 並且,當一晶圓放在位於緩衝階段21〇内的對準器218 上時,對準器218藉由真空吸住晶圓、轉動晶圓及感應此 10 晶圓的一凹口部份以將晶圓對準。 本發明中,將兩個轉移模組212a及212b形成為附接至 基材轉移模組214而可在同一時間轉移兩個晶圓。因此, 已在緩衝階段210中經歷對準及0CR程序同時保持待命狀 態之兩個晶圓係由基材轉移機械臂214導入處理室222中以 15 經歷下一項半導體製造程序。 產業通用柹 由上文可知,根據本發明用於製造半導體裝置之叢集 式灰化又備&供的優點在於:因為將一用於進行對準及 OCR功能之單元配置於一緩衝階段中而得以在一晶圓位於 20緩衝階段中的同時來實行對準及OCR程序,故不再需以分 開的時間長度實行對準及0CR程序,可藉此改善生產力。 並且,本發明中,因為提供複數個轉移模組且各轉移 模組用於將一晶圓轉移至-處理室中,所以可在將複數個 晶圓同時導入處理室中的情形下實行一半導體製造程序, Γ ·) ΰ 10 410354 玖、發明說明 故可增進設備的產出並可改善生產力。 並且,本發明中,可以提升緩衝站的產出,此緩衝站 係包括在晶圓導入-處理室中之前不需一定保持一真空化 狀態而能夠管理個別晶圓之一OCR元件、以及能夠改善一 5程序的精密度之一對準元件。 圖式及說明書中,已揭露本發明之典型較佳實施例, 雖然採用特定用語但其係為普通及說明性質而非限制性質 ,本發明的範圍由申請專利範圍所界定。 【圓式簡單說明】 可參照圖式由下文詳細描述更清楚地得知本發明之上 述目的、其他特性及優點,其中: 第1圖為用於製造半導體裝置之一習知叢集式設備的 不意圖; 第2圖為根據本發明的一較佳實施例用於製造半導體 15裝置之一叢集式灰化設備的構造圖; 第3圖為詳細顯示第2圖所示的灰化設備中所採用之一 緩衝階段之立體圖,此緩衝階段係包括一對準模組及一 OCR程序模組; 第4圖顯示根據本發明的一實施例之一轉移模組的立 20 體圖;及 第5圖顯示根據本發明的一實施例之一種藉由轉移模 組將晶圓導入一處理室中之狀態的立體圖。 11 200410354 玖、發明說明 【圖式之主要元件代表符號表】 100···習知叢集式設備 110a···第一處理室 110b、110c、222處理室 120a…第一承載器室 120b…第二承載器室 122、218…對準器 124···冷卻板 130···多角形轉移模組 132···基材轉移模組 140…基材 200···叢集式灰化設備 210···緩衝階段 212、212a、212b···轉移模組 214···基材轉移機械臂 216···冷卻階段 220..-OCR 模組_ A notch portion of the wafer to align the wafer. And when a crystal rotates the wafer, the diagram will briefly explain the country, and the diagram will be clearer from the following detailed description of the purpose, other characteristics and advantages of the present invention, including: a schematic diagram; FIG. 2 of a conventional cluster device for manufacturing a semiconductor device is a structural diagram of a cluster ashing device for manufacturing a semiconductor device according to a preferred embodiment of the present invention; FIG. 3 is a detailed display of FIG. 2 A perspective view of a buffering stage used in the illustrated ashing equipment. This buffering stage includes an alignment module and an OCR program module. FIG. 4 illustrates a transfer module according to an embodiment of the present invention. Perspective view; and FIG. 5 is a perspective view showing a state where a wafer is introduced into a processing chamber by a transfer module according to an embodiment of the present invention. [Detailed description of the preferred embodiment of the poor application mode 3. Now refer to a preferred embodiment of the present invention in detail. An example is shown in the drawing. Each figure and the text represent the same or similar elements with the same number as much as possible. . As shown in FIGS. 2 and 3, in the cluster ashing apparatus 200 according to an embodiment of the present invention, an aligner 218 capable of performing an alignment procedure is positioned in a buffer stage below a cooling stage 216 21 〇. In addition, a 200410354, invention description OCR module 220 is positioned in the buffer stage mo on the side of an upper end of the aligner 2 丨 8 and the side of the lower end of the cooling stage 216. At this time, when a designated semiconductor manufacturing process is performed, individual wafers are placed on the transfer module 212 in the buffer stage 210 and transferred by a substrate transfer robot 5 arms 2 14 one by one into a processing chamber 222. The aligner 2 18 and the OCR module 220 located in the buffering stage 2 work implement the respective alignment and 0CR procedures for the wafers that have maintained a standby state in the buffering stage 2 10. In addition, when a wafer is placed on the aligner 218 located in the buffer stage 21, the aligner 218 sucks the wafer by vacuum, rotates the wafer, and senses a notch portion of the 10 wafers to Align the wafer. In the present invention, the two transfer modules 212a and 212b are formed to be attached to the substrate transfer module 214 so that two wafers can be transferred at the same time. Therefore, the two wafers that have undergone the alignment and 0CR procedures in the buffer stage 210 while remaining on standby are introduced into the processing chamber 222 by the substrate transfer robot 214 to undergo the next semiconductor manufacturing procedure. It can be seen from the above that the cluster ashing method for manufacturing semiconductor devices according to the present invention has the advantage of being: because a unit for performing alignment and OCR functions is arranged in a buffer stage, Alignment and OCR procedures can be performed at the same time that a wafer is in the 20 buffer stage, so there is no longer a need to perform alignment and OCR procedures at separate lengths of time, which can improve productivity. Moreover, in the present invention, since a plurality of transfer modules are provided and each transfer module is used to transfer a wafer to a processing chamber, a semiconductor can be implemented in a case where a plurality of wafers are simultaneously introduced into the processing chamber. Manufacturing process, Γ ·) ΰ 10 410354 发明, invention description can increase equipment output and improve productivity. In addition, in the present invention, the output of the buffer station can be improved. The buffer station includes an OCR element capable of managing an individual wafer without maintaining a vacuum state before the wafer is introduced into the processing chamber, and can improve One of the precision of the 5 procedure is to align the components. In the drawings and the description, typical preferred embodiments of the present invention have been disclosed. Although specific terms are used, they are general and illustrative rather than restrictive. The scope of the present invention is defined by the scope of patent application. [Circular description] The above-mentioned objects, other characteristics, and advantages of the present invention can be more clearly understood from the following detailed description with reference to the drawings. Among them: FIG. 1 is a diagram of a conventional cluster device for manufacturing a semiconductor device. Intent; FIG. 2 is a structural diagram of a cluster ashing apparatus for manufacturing a semiconductor 15 device according to a preferred embodiment of the present invention; and FIG. 3 is a diagram showing details of the ashing apparatus used in FIG. 2 A perspective view of a buffering stage, which includes an alignment module and an OCR program module; FIG. 4 shows a perspective view of a transfer module according to an embodiment of the present invention; and FIG. 5 A perspective view showing a state in which a wafer is introduced into a processing chamber by a transfer module according to an embodiment of the present invention. 11 200410354 发明 Description of the invention [Representative symbols of the main components of the drawing] 100 ... The conventional cluster equipment 110a ... The first processing chamber 110b, 110c, 222 processing chamber 120a ... the first carrier chamber 120b ... the first Two carrier chambers 122, 218 ... aligner 124 ... cooling plate 130 ... polygon transfer module 132 ... substrate transfer module 140 ... substrate 200 ... cluster ashing equipment 210 ... Buffer stage 212, 212a, 212b ... Transfer module 214 ... Substrate transfer robot 216 ... Cooling stage 220 ..- OCR module
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