200403790 玖、發明說朋 【發明所屬之技術領域】 本發明係關於將接合面以能量波或能量粒子洗淨後將洗 淨後之被接合物彼此接合之安裝方法及安裝裝置，尤其是 關於以有效率地防止經由洗淨自接合面除去之氧化物、有 機物等之污物之再附著到接合面爲目標，作成爲可使洗淨 爲此狀態之接合面彼此接合之構成的安裝方法及安裝裝 置。 【先前技術】 將接合面以能量波或能量粒子洗淨後再將被接合物彼此 接合的技術爲已知。例如，於日本專利第2 7 9 1 4 2 9號公報 中，曾提出在使矽晶圓的接合面進行接合之前’在室溫的 真空中以離子束或原子束等的能量波或能量粒子洗淨’將 矽晶圓於常溫進行接合的方法。在此方法中，在矽晶圓的 接合面之氧化物或有機物等，用上述的能量束藉由蝕刻而 飛濺除去，於矽的原子上形成表面，其表面彼此可經由原 子間的高結合力而在常溫下接合。 於這樣的以能量波或能量粒子將接合面洗淨的方法中’ 通常被接合物係作成上下配置以將各接合面洗淨’若將配 置於上側之被接合物之朝向下方的接合面洗淨，則自該接 合面所除去的污物會容易掉落到下方，落下的污物’會有 再附著到配置於下側之被接合物的上方之顧慮。因此’尤 其是配置於下側之被接合物的接合面會有洗淨不充分的顧 慮。由在接合界面之氧化物與有機物等所構成的層（所謂 6 312/發明說明書(補件)/92-07/92109691 200403790 之污染層）之去除若不充分，則欲得到所要目標之良好且 高可靠性的接合狀態會有困難。 【發明內容】 本發明之目的，在於提供一種安裝方法及安裝裝置，其 係於接合前將被接合物的接合面以能量波或能量粒子洗淨 之時，可有效地防止自接合面所去除的污物之再附著到接 合面，可提高洗淨效果並可進行高可靠性的接合者。 爲了達成上述之目的，本發明之安裝方法，係用以將對 向配置之兩被接合物的接合面以能量波或能量粒子洗淨之 後將被接合物彼此接合者；其特徵在於，係由將前述兩被 接合物作成上下對向配置，先對上側的被接合物之朝向下 方之接合面進行洗淨之後，再對下側的被接合物之朝向上 方的接合面進行洗淨的方法所構成。 亦即，於此安裝方法中，由於係先對上側的被接合物之 朝向下方的接合面進行洗淨，接著，再對下側的被接合物 之朝向上方的接合面進行洗淨，故自上側的被接合物的接 合面所去除的污物即使掉落到下方而再附著到下側的被接 合物的接合面，該污物藉由下側的被接合物的接合面之洗 淨時可確實地去除，而可使兩接合面確實地乾淨地洗淨。 由於可在此狀態下進行接合，故可得到高可靠性的接合狀 態。 又，於此安裝方法中，於洗淨時以自被接合物間的一側 供給氣體，而自相反方向抽氣爲佳。如此般’藉由自一方 向供給氣體，自相反側抽取氣體’於洗淨部中一直形成單 312/發明說明書(補件)/92-〇7/921〇9691 7 200403790 一方向的氣流，一旦自接合面去除之污物不易再附著到該 接合面或另一方的接合面，可更加提高經由上述洗淨之去 除污物的效果。 又，本發明之安裝方法，係用以將對向配置之兩被接合 物的接合面以能量波或能量粒子洗淨之後將被接合物彼此 接合者，其特徵在於’係由將[述兩被接合物作成左右對 向配置，將對向之接合面以能量波或能量粒子進行洗淨的 方法所構成。 亦即，在此安裝方法中，與習用之被接合物的配置形態 不同者在於係使兩被接合物作成左右對向配置，於該狀態 下，可對相對向之接合面以能量波或能量粒子進行洗淨。 由於經由洗淨自接合面所去除的污物會掉落到下方，故不 易再附著到任一的接合面上，而可將兩接合面確實地乾淨 地洗淨。由於係在此狀態下進行接合，故可得到可靠性高 的接合狀態。 於此安裝方法中，如上下配置的情況般，在配置形態上， 自一方的被接合物的接合面所去除的污物之再附著到另一 方的被接合物的接合面之情事不易發生，故可沒有問題地 將左右的對向接合面以能量波或能量粒子實質上同時進行 洗淨。 又，於此安裝方法中，於洗淨時以自被接合物間的上方 供給氣體並自下方抽氣爲佳。藉由如此般的在被接合物間 自上方往下方一直形成單一方向的氣流，一旦自接合面去 除之污物可更平順地落下，不易再附著到該接合面或另一 8 312/發明說明書(補件)/92-07/92109691 200403790 方的接合面，可更加提高經由上述洗淨之去除污物的效果。 上述般的個安裝方法中之作爲使用於洗淨之能量波或能 量粒子，可使用電漿、離子束、原子束、自由基線束、雷 射等，其中，就取用容易性與控制容易性、裝置的成本與 構造的簡易性的方面考量，以使用電漿爲佳。 於使用電漿作爲能量波或能量粒子的情況，可作成爲於 用以保持兩被接合物之機構分別設置電漿產生用電極，使 其在兩電極間產生電漿將兩被接合物的接合面洗淨，並且 經由使兩電極的極性變換使所產生的電漿之照射方向變換 而對兩被接合物的接合面進行洗淨之構成。 又作爲洗淨時所使用之前述氣體，與前述者同樣地，可 用惰性氣體（例如氬氣）、非氧化氣體（例如氮氣）、還原氣 體（例如氫氣）、取代氣體（例如具有氟基等之取代基的氣 體）等。尤其是，於電漿洗淨的情況，以用氬氣爲佳。 再者，可作成爲在處理室內施行上述洗淨的構成。藉由 在處理室所作成的實質上的密閉構造之空間內進行上述洗 淨，可在更潔淨的環境下進行洗淨，且，由於經由使處理 室內作成惰性氣體等之環境，可提高能量波或能量粒子的 產生效率，洗淨效果可更爲提高。 於處理室內進行洗淨的情況，由於藉由使設置於用以保 持被接合物之機構的能量波或能量粒子產生用電極以外之 前述處理室的壁接地，可將鈾刻物捕捉（t r a p )於處理室 壁，故爲較佳。 又，於本發明之安裝方法中，可於被接合物的對向配置 9 312/發明說明書(補件)/92-07/92109691 200403790 位置的一方配置捕捉用假體，於將兩接合物交替洗淨後將 各接合物取出，再將兩接合物對向配置，依設定的順序、 或同時地進行再洗淨後使被接合物彼此進行接合。於以對 向配置進行洗淨的情況，由於被洗淨側的相反側之被接合 物，會受到洗淨中飛濺來的雜物之再附著，若事先於一方 的被接合物之配置位置處配置用以捕捉飛濺雜物之捕捉用 假體而進行洗淨，可在不發生再附著之下得以洗淨。於將 洗淨之被接合物取出到大氣中之時，雖會吸附空氣中的分 子，但由於僅是薄薄的1分子層的程度且爲微量，只要再 一定的時間內（例如，1小時以內），再度作成爲對向配置 將兩面洗淨，再附著量也甚微少，故不會有問題。 此捕捉用假體側以作成接地爲佳。由於若使前述處理室 的壁與捕捉用假體側接地，可將經由能量波或能量粒子進 行蝕刻而飛濺出的分子捕捉住，故亦可防止到對被洗淨的 被接合物之再附著。 又，本發明之安裝方法，係用以將對向配置之兩被接合 物的接合面以能量波或能量粒子洗淨之後將被接合物彼此 接合者；其係由在兩被接合物間插入間隔板將各被接合物 洗淨，使間隔板退開後再使被接合物彼此進行接合的方法 所構成。 此方法，可採用依前述設定的順序、或同時地進行洗淨 的方法，可在兩被接合物間插入間隔板將各被接合物洗 淨，使間隔板退開後再使被接合物彼此進行接合。 在此方法中，對於各被接合物的保持機構側的能量波或 10 312/發明說明書(補件)/92-07/92109691 200403790 能量粒子產生用電極，以前述間隔板接地爲佳。由於藉由 將插入於兩被接合物間的間隔板接地，於對被接合物進行 洗淨之時，因蝕刻所飛濺出的分子可被間隔板所捕捉，可 防止對經洗淨的被接合物之再附著。於洗淨後，可將此間 隔板退開。 於上述般的本發明之各安裝方法中，以在真空度130X 1CT1〜130 Xl02Pa的環境下進行洗淨爲佳。若真空度升 得太高，則經飩刻掉落者易於朝向對向的被接合物直線前 進，導致容易發生再附著情形。又，藉由將真空度未設定 成太高，浮游之分子數會適度地增多，經蝕刻所飛濺出的 分子於途中會撞到浮游分子而擴散開。由於擴散開的分子 會被捕捉於經接地之處理室的壁等，而不易再附著。 又，以於作成爲前述真空度之前先減壓成該真空度以下 之後再導入反應氣體升高至該真空度爲佳。亦即，浮游分 子經由上述的碰撞仍有再附著之顧慮，對此以導入適當的 反應氣體爲佳。尤其是，以於作成爲前述真空度之前反覆 以反應氣體取代爲佳。 又，於如此地防止再附著之時，若使兩被接合物隔開 3 0 mm以上而進行洗淨，則可更有效果地防止再附著。 又，於本發明之各安裝方法中，以使用RF電漿進行洗 淨爲佳。若使用RF電漿，則可更容易地控制成所要的洗淨 強度。且可減低電荷蓄積損害，亦可進行非導電體之洗淨。 本發明之安裝裝置，係用以將對向配置之兩被接合物的 接合面以能量波或能量粒子洗淨之後將被接合物彼此接合 11 312/發明說明書(補件)/92-07/92109691 200403790 者；其特徵在於，係由具有用以將前述兩被接合物作成上 下對向配置的被接合物保持機構，並具有用以先對上側的 被接合物之朝向下方之接合面進行洗淨之後’再對下側的 被接合物之朝向上方的接合面進行洗淨的洗淨機擀所構 成。 於此安裝裝置中，爲了在洗淨時如前述般形成單一方向 的氣流，以具有於洗淨時自被接合物間的一側供給氣體之 氣體供給機構及自相反方向抽取氣體之氣體抽取機構爲 佳。 又，本發明之安裝裝置，係用以將對向配置之雨被接合 物的接合面以能量波或能量粒子洗淨之後將被接合物彼此 接合者；其特徵在於，係由具有用以將前述兩被接合物作 成左右對向配置的被接合物保持機構，並具有用以將對向 之接合面以能量波或能量粒子洗淨的洗淨機構所構成。 於此安裝裝置中，上述洗淨機構將構成爲可對左右對向 配置的接合面以能量波或能量粒子實質上同時地進行洗淨 的機構。 又，爲了在洗淨時如前述般形成由上方往下方之單一方 向的氣流，以具有用以於洗淨時自被接合物間的上方供給 氣體並自下方抽取氣體之氣體抽取機構爲佳。 作爲上述般的各安裝裝置中之洗淨時所使用之能量波或 能量粒子，亦可使用電漿、離子束、原子束、自由基線束、 雷射等，如前述般，其中，就取用容易性與控制容易性、 裝置的成本與構造的簡易性的方面考量，以使用電漿爲佳。 12 S :b y 312/發明說明書(補件)/92-07/92109691 200403790 於使用電漿作爲能量波或能量粒子的情況，可採用具有 於用以保持兩被接合物之機構分別設置電漿產生用電極， 並且經由使兩電極的極性變換使所產生的電漿之照射方向 變換的極性變換機構之構成。 又作爲本發明之安裝裝置中之洗淨時所使用之前述氣 體，可用惰性氣體（例如氬氣）、非氧化氣體（例如氮氣）、 還原氣體（例如氫氣）、取代氣體（例如具有氟基等之取代 基的氣體）等。尤其是，於電漿洗淨的情況，以用氬氣爲 佳。 再者，於此安裝裝置中，以可作成爲具有至少將前述兩 被接合物及洗淨機構實質上覆蓋成密閉狀態之處理室的構 成。 於此安裝裝置中，以使設置於用以保持被接合物之機構 的能量波或能量粒子產生用電極以外之前述處理室的壁接 地爲佳。 又，於本發明之安裝裝置中，以在被接合物的對向配置 位置的一方配置捕捉用假體，於將兩接合物交替洗淨後將 各接合物取出，再將兩接合物對向配置用前述洗淨機構進 行再洗淨爲佳。捕捉用假體側以作成爲接地爲佳。 又，本發明之安裝裝置，係用以將對向配置之兩被接合 物的接合面以能量波或能量粒子洗淨之後將被接合物彼此 接合者；其特徵在於，係由具有於洗淨時可插入前述兩被 接合物間於洗淨後可退開之間隔板的洗淨機構所構成。 此裝置構成，亦可採用能依前述設定的順序、或同時地 13 312/發明說明書(補件)/92-07/92109691 200403790 進行洗淨的安裝裝置，前述洗淨機構，於洗淨 接合物間插入間隔板，於洗淨後使間隔板退開 成。 於具備有這樣的間隔板的裝置中，對於各被 持機構側的能量波或能量粒子產生用電極，以 接地爲佳。 又，於上述般的本發明之安裝裝置中，前述 以由用以在真空度130 xlO-llSO xl02Pa 行洗淨的機構所構成爲佳。 此情況，前述洗淨機構，亦可採用在作成爲 之前先減壓成該真空度以下之後再導入反應氣 真空度之機構的構成；及在作成爲前述真空度 反應氣體取代之機構的構成。於作成前述真 中，前述洗淨機構，以由使兩被接合物隔開3 進行洗淨之機構所構成爲佳。 又，於本發明之各安裝裝置中，前述洗淨機 RF電漿之機構所構成。 於所示般的安裝方法及安裝裝置中，於藉由 量粒子進行兩被接合物的接合面洗淨時，可防 除去的污物之再附著到接合面上，可使兩接合 所要的潔淨狀態，藉此，可大幅地提高接合之 【實施方式】 以下，就本發明之較佳實施形態參照圖式加 圖1顯示本發明之第1實施形態之安裝裝置 312/發明說明書(補件)/92-07/92109691 時可在兩被 的機構所構 接合物的保 前述間隔板 洗淨機構， 的環境下進 前述真空度 體升高至該 之前反覆以 空度之裝置 0 mm以上而 構可由使用 能量波或能 止自接合面 面皆洗淨成 可靠性。 以說明。 1。本實施 14 200403790 形態，作爲要相互接合之被接合物，係以一方爲配置於上 側的晶片2，另一方爲配置於下側的基板3來表示，並顯 示爲將兩被接合物作成上下對向配置之情況。於晶片2上 設置有複數的電極4 (圖1中顯示2個電極4 )，於基板3 設置有對應的電極5。晶片2係保持於作爲一方的被接合 物保持機構之晶片保持機構6上，基板3則保持於作爲另 一方的被接合物保持機構之基板保持機構7上。於保持於 真空中的情況，以使用靜電吸盤爲佳。於本實施形態中， 晶片保持機構6係作成爲可沿Z方向（上下方向）調整位置 的構成，基板保持機構7則作成爲可沿X、Y方向（水平方 向）及/或旋轉方向（0方向）調整位置的構成。 上述般的基板保持機構7，通常係安裝成可平行移動及/ 或可旋轉的狀態，必要時，亦可安裝成可平行移動及/或 可旋轉與可昇降（Z方向移動）之組合的形態。又，於晶片 保持機構6側，亦可作成爲不僅可進行昇降動作，並可進 行平行移動及/或旋轉動作之裝置形態。 又，上述中，所謂之晶片2，係指例如：I C晶片、半導 體晶片、光元件、表面安裝元件、晶圓等，不論其種類與 大小之用以與基板3接合之一方之全部者。所謂之基板 3，係指例如：樹脂基板、玻璃基板、薄膜基板、晶片、 晶圓等’不論其種類與大小之用以與晶片2接合之一方之 全部者。 於本實施形態中，於晶片保持機構6中之直接保持晶片 2的部分、及於基板保持機構7中之直接保持基板3的部 15 312/發明說明書(補件)/92-07/92109691 200403790 分，係構成爲電極機具8、9，係分別作成爲可發揮作爲電 漿產生用電極的作用之構成。此等電極機具8、9，係連接 到極性可交替更換的電漿產生用電極1 〇，並作成爲於電極 機具8、9間可對晶片2的接合面及基板3的接合面以洗 淨用電漿1 1照射的構成。 又，於本實施形態中，係作成爲使上述洗淨在至少將兩 被接合物2、3與洗淨機構（電極機具8、9 )包覆成實質上 爲密閉狀態的處理室1 2中隔絕開外部環境的狀態下進行 的構成。處理室1 2的壁，亦即前述電極機具8、9以外的 部分之形成處理室1 2的壁，係作成爲接地狀態。處理室 1 2的一部份係以可伸縮的彈性構件1 3所構成，並構成爲 藉由處理室1 2保持於密閉狀態下於洗淨後可移行到接合 步驟的構成。於此接合步驟前，可用周知的方法使兩被接 合物2、3的相對位置對準而進行對齊。於進行對齊的情 況，例如用紅外線照相機自下部透過基板，讀取晶片、基 板側的兩對齊標記，於保持台上進行X、Y、Θ方向的修正。 然後，使晶片保持機構下降進行接合。 於本實施形態中，於處理室1 2中，於用電漿進行洗淨 時，爲了將處理室1 2內作成爲惰性氣體環境，尤其是氬 氣（Ar氣）環境，連接有惰性氣體供給機構1 4。此氬氣， 係自一側供給到兩被接合物2、3間。又，於處理室1 2的 相反側，連接有作爲氣體抽取機構1 5的真空泵，將上述 供給之氬氣自相反側抽氣。藉由此氣體之供給及抽取，於 洗淨時可在兩被接合物2、3間形成單一方向的氣流。過 16 312/發明說明書(補件)/92-07/92109691 200403790 去的電漿洗淨方法係在密閉狀態下進行，本方式則爲藉由 使真空抽取係維持爲一定的力的狀態下來控制氣體供給流 量，在保持於一定的真空度之下形成氣流的方法。 在如此構成的安裝裝置1中，於進行對齊、接合前，晶 片2與基板3的接合面係以電漿洗淨，於此洗淨中，係先 對配置於上側的晶片2之面向下方的接合面進行洗淨，接 著再對配置於下側的基板3之面向上方的接合面進行洗 淨。此洗淨的順序，可藉由使電極機具8、9的極性變換 而使所產生的電漿11的照射方向變換而確實地達成。 由於係先對配置於上側的晶片2之面向下方的接合面進 行洗淨，接著再對配置於下側的基板3之面向上方的接合 面進行洗淨，自晶片2的接合面經由洗淨所除去的污物即 使掉落而再附著於基板3的接合面，在隨後所進行的基板 3的接合面之洗淨，可將其污物確實地除去，其結果，可 防止污物對兩接合面的再附著，將兩接合面皆洗淨成所要 的潔淨狀態。由於係將如此般洗淨的接合面彼此接合，故 可大幅提高接合的可靠性。 又，於本實施形態中，由於藉由氣體供給機構1 4與氣 體抽取機構1 5，於洗淨時在兩被接合物2、3間可形成單 一方向的氣流，故自各接合面經由洗淨所除去的污物更加 不易再附著，而可更爲提高洗淨效果。其結果，接合的可 靠性可更爲提高。 圖2顯示本發明之第2實施形態之安裝裝置2 1。本實 施形態’顯不欲互相接合的兩被接合物之晶片2與基板3 17 312/發明說明書(補件)/必〇7/92109691 200403790 爲作成左右對向配置的情況。於晶片保持機構2 2設置有 電漿產生用電極機具2 4，於基板保持機構2 3設置有電漿 產生用電極機具2 5。洗淨係用至少將兩被接合物2、3與 洗淨機構（電極機具2 4、2 5 )實質上以密閉狀態覆蓋的處 理室2 6在將外部環境隔絕的狀態下進行。作爲在真空中 之保持機構以使用靜電吸盤爲佳。處理室2 6的一部份係 由可伸縮的彈性構件2 7所構成，並作成爲藉由處理室2 6 保持於密閉狀態下於洗淨後移行到對齊、接合步驟中的構 成。於進行對齊的情況，例如用紅外線照相機自下部透過 基板，讀取晶片、基板側的兩對齊標記，於保持台上進行 X、Y、Θ方向的修正。然後，移動晶片保持機構進行接合。 於本實施形態中，於處理室2 6中，於使用電漿進行洗 淨之時，爲了將處理室2 6內作成爲惰性氣體環境，尤其 是氬氣（Ar氣）環境，連接有惰性氣體供給機構2 8。此氬 氣，係自上方往下方供給到兩被接合物2、3間。又，於 處理室2 6的相反側，連接有作爲氣體抽取機構2 9的真空 泵，將上述供給之氬氣自相反方向之下方抽氣。藉由此氣 體之供給及抽取，於洗淨時可在兩被接合物2、3間形成 自上方往下方之單一方向的氣流。 在如此構成之安裝裝置2 1中，於進行對齊、接合前， 晶片2與基板3的接合面係以電漿洗淨，於此洗淨中，對 作成左右配置的晶片2與基板3的接合面用電漿洗淨，於 此洗淨中，先洗淨晶片2與基板3的接合面之任一者的接 合面皆可，或實質上同時進行洗淨亦可。於任一的洗淨方 18 312/發明說明書(補件)/92-07/92109691 200403790 法中，由於係將晶片2與基板3作成左右對 接合面配置成上下延伸的面，故經洗淨所除 下方落下，而不易再附著到接合面上。因而 面都洗淨成所要的潔淨狀態，由於係將如此 面彼此接合，故可大幅提高接合的可靠性。 又，於本實施形態中，由於藉由氣體供給 體抽取機構2 9，於洗淨時在兩被接合物2、 上方往下方之單一方向的氣流，故自各接合 除去的污物容易往下方落下，更加不易再附 提高洗淨效果。其結果，接合的可靠性可更 又，於上述第1、第2實施形態中，由於 極8或9，2 4或2 5施加電壓，相反側的電 使處理室1 2或2 6接地，可將洗淨所飛濺的 理室裏面，故可有效地防止再附著的情形。 電極接地，則易於發生再附著的情形而非良 又，於本發明中，亦可使用捕捉用假體事 例如，於圖3之第3實施形態所示般，將電 3 1連接到用以保持洗淨被接合物3 2 (例如， 3 3，使捕捉用假體3 5 (例如，捕捉用假體| 一方的電極34上而與處理室36 —起接地。 洗淨被接合物3 2飛濺出的分子可被捕捉用 捉，而不易再附著到洗淨被接合物3 2。又， 3 6接地，由於處理室3 6的內面亦可發揮捕 更不容易發生再附著的情形。 312/發明說明書(補件)/92-07/92109691 向配置，使兩 去的污物會往 ，可將兩接合 般洗淨的接合 機構2 8與氣 3間可形成由 面經由洗淨所 著，而可更爲 爲提高。 對洗淨側的電 極不作接地而 分子捕捉於處 若將相反側的 好。 先進行洗淨。 漿產生用電源 晶圓）的電極 ί圓）保持於另 經由蝕刻之自 假體3 5所捕 藉由使處理室 捉的作用，故 19 200403790 又，於本發明中，亦可採用插入間隔板的構成。例如， 圖4之第4實施形態所示般，在作成爲對處理室4 i中之 對向保持的兩被接合物4 2、4 3的電極4 4、4 5交替施加 由電漿產生用電極4 6所產生的電壓之構成中，係將間隔 板4 7插入兩被接合物4 2、4 3間，對一方的被接合物進行 洗淨。間隔板4 7係與處理室4 1 一起作成接地。於此洗淨 中，由於因蝕刻而自洗淨被接合物3 2所飛出的分子會被 捕捉於間隔板4 7上，故不易再附著到經洗淨的被接合物， 而對於相反側的被接合物，則由於受到間隔板4 7的遮蔽 而不會附著。由於處理室4 1也接地，而更不易附著。於 兩被接合物洗淨後，使間隔板4 7退開即可。如此般地使 用間隔板4 7的洗淨，可採用作爲本洗淨，亦可採用作爲 事前洗淨。 再者，於本發明中，如前述般，以將洗淨時的環境的真 空度作成爲130 X10·1〜130xl02Pa的範圍內爲佳。又， 於作成爲此真空度範圍之前，以減壓成該真空度以下之後 再導入反應氣體升高至該真空度爲佳。由於有著因浮游分 子的撞擊而再附著的顧慮，故須將其以適當的反應氣體置 入。於作成爲前述真空度之前以反覆用反應氣體取代爲 佳。又，於防止這樣的再附著之時，若使兩被接合物隔開 3 0 mm以上而進行洗淨，則可更有效地防止再附著。 如此般，於本發明之安裝方法及安裝裝置中，由於係作 成爲以能量波或能量粒子對兩被接合物的接合面進行洗淨 之時可防止由接合面除去的污物之再附著到接合面的構200403790 发明, invention said [Technical field to which the invention belongs] The present invention relates to an installation method and an installation device for joining surfaces to be washed after being washed with energy waves or energy particles, and more particularly to An installation method and an installation for effectively preventing the re-adhesion of oxides, organic matter, and other contaminants removed from the joint surface to the joint surface by washing. Device. [Prior art] A technique of washing the joining surfaces with energy waves or energy particles and joining the objects to be joined is known. For example, in Japanese Patent No. 2 7 1 4 2 9, it has been proposed to use an energy wave or energy particle such as an ion beam or atomic beam in a vacuum at room temperature before bonding the bonding surfaces of a silicon wafer. The method of "cleaning" and bonding silicon wafers at normal temperature. In this method, oxides or organic substances on the bonding surface of a silicon wafer are sputter-removed by etching using the energy beam described above to form surfaces on silicon atoms, and the surfaces can pass through a high bonding force between atoms. And joint at room temperature. In such a method of washing the joint surface with energy waves or energy particles, 'the object to be joined is usually arranged vertically to wash each joint surface.' If the joint surface disposed on the upper side is washed downward, the joint surface is washed. Clean, the dirt removed from the joint surface will easily fall below, and there is a concern that the fallen dirt 'will reattach to the upper side of the object to be disposed on the lower side. Therefore, the joint surface of the object to be joined, which is arranged on the lower side, may be insufficiently cleaned. If the removal of the layer (so-called 6 312 / Invention Specification (Supplement) / 92-07 / 92109691 200403790) made of oxide and organic matter at the bonding interface is not sufficient, the desired target is good and High-reliability bonding can be difficult. SUMMARY OF THE INVENTION An object of the present invention is to provide a mounting method and a mounting device, which can effectively prevent removal from a bonding surface when the bonding surface of an object to be bonded is washed with energy waves or energy particles before bonding. The re-adhesion of the dirt on the joint surface can improve the cleaning effect and can perform a highly reliable joint. In order to achieve the above-mentioned object, the installation method of the present invention is used for washing the joint surfaces of two objects to be disposed opposite to each other by energy waves or energy particles, and joining the objects to each other; The two objects to be joined are arranged vertically facing each other, and the method is to clean the upper joint surface facing downward and then wash the lower joint surface facing upward. Make up. That is, in this mounting method, since the joint surface facing downward of the upper object to be joined is washed first, and then the joint surface facing upward of the lower object to be joined is washed, so The dirt removed from the joint surface of the upper object to be adhered to the joint surface of the lower object even if it is dropped downward, and the dirt is washed by the joint surface of the lower object. It can be reliably removed, and both joint surfaces can be cleaned cleanly. Since bonding can be performed in this state, a highly reliable bonding state can be obtained. Further, in this mounting method, it is preferable to supply gas from one side between the objects to be joined during cleaning, and to evacuate from the opposite direction. In this way, “by supplying gas from one direction and extracting gas from the opposite side”, a single 312 / Invention Specification (Supplement) / 92-〇7 / 921〇9691 7 200403790 is always formed in the cleaning section. The dirt removed from the joint surface is less likely to adhere to the joint surface or the other joint surface, and the effect of removing the dirt through the washing can be further improved. In addition, the installation method of the present invention is used to clean the joint surfaces of two objects to be arranged facing each other with energy waves or energy particles, and to join the objects to each other. The objects to be joined are arranged so as to face left and right, and the opposing joint surfaces are cleaned by energy waves or energy particles. That is, in this installation method, the arrangement form of the joints different from the conventional one is that the two joints are arranged left and right to face each other. In this state, energy waves or energy can be applied to the facing joint faces. The particles are washed. Since the dirt removed from the joint surface by washing falls down, it is not easy to adhere to any joint surface, and both joint surfaces can be cleaned reliably and cleanly. Since joining is performed in this state, a highly reliable joined state can be obtained. In this installation method, as in the case of up and down arrangement, in the arrangement form, the dirt removed from the joining surface of one of the joined objects is not easily attached to the joining surface of the other joined object. Therefore, the left and right facing joint surfaces can be washed substantially simultaneously by energy waves or energy particles without any problem. In this mounting method, it is preferable to supply gas from above and to evacuate from below during cleaning. By forming a single direction of air flow from above to below between the objects to be bonded, once the dirt removed from the bonding surface can fall more smoothly, it is not easy to attach to the bonding surface or another 8 312 / Invention Manual (Supplement) / 92-07 / 92109691 200403790 square joint surface can further improve the effect of removing dirt through the above washing. As the energy wave or energy particle used for cleaning in the above-mentioned individual mounting methods, plasma, ion beam, atomic beam, radical beam, laser, etc. can be used. Among them, ease of use and control 2. The cost of the device and the simplicity of the structure are considered, and the use of a plasma is preferred. In the case where a plasma is used as an energy wave or an energy particle, it can be used as a mechanism for holding the two objects to be joined, respectively, and a plasma generating electrode is provided to generate a plasma between the two electrodes to join the two objects. The surface is cleaned, and the joining surfaces of the two objects to be joined are washed by changing the polarity of the two electrodes and changing the irradiation direction of the generated plasma. As the aforementioned gas used for cleaning, similarly to the foregoing, an inert gas (such as argon), a non-oxidizing gas (such as nitrogen), a reducing gas (such as hydrogen), or a replacement gas (such as having a fluorine group) can be used. Substituent gas) and so on. In particular, in the case of plasma cleaning, argon is preferred. Moreover, it can be set as the structure which performs the said washing | cleaning in a processing chamber. By performing the above-mentioned cleaning in a space of a substantially closed structure made in the processing chamber, the cleaning can be performed in a cleaner environment, and the energy wave can be increased by making the processing chamber an environment such as an inert gas. Or the generation efficiency of energy particles, the cleaning effect can be further improved. In the case of cleaning in a processing chamber, the uranium carving can be trapped (ground) by grounding the wall of the processing chamber other than the energy wave or energy particle generating electrode provided in the mechanism for holding the object to be bonded. It is better at the wall of the processing chamber. Moreover, in the installation method of the present invention, a capture prosthesis may be disposed at one of the positions opposite to the object to be joined 9 312 / Invention Manual (Supplement) / 92-07 / 92109691 200403790, which alternates the two joints After washing, the joints are taken out, and then the two joints are arranged to face each other, and the joints are joined to each other after being rewashed in a set order or simultaneously. In the case of cleaning in the opposite arrangement, the object on the opposite side of the side to be cleaned will be reattached by debris splashed during cleaning. If it is placed in the position of one of the objects in advance, The cleaning prosthesis is arranged to catch splashing debris, and can be cleaned without reattachment. When the cleaned object is taken out into the atmosphere, although the molecules in the air are adsorbed, it is only a thin one-molecule layer and it is in a trace amount. As long as it takes a certain period of time (for example, 1 hour) Within), once again make the opposite configuration to wash both sides, and the amount of re-attachment is very small, so there will be no problem. The capture prosthesis is preferably grounded. If the wall of the processing chamber is grounded to the capture prosthesis side, the molecules spattered by etching through energy waves or energy particles can be captured, thereby preventing reattachment of the washed object to be cleaned. . In addition, the installation method of the present invention is used to wash the joint surfaces of two objects to be arranged facing each other with energy waves or energy particles and join the objects to each other; it is inserted between the two objects. The partition plate is configured by washing each object to be joined, and then retracting the partition plate, and then joining the objects to be joined. In this method, the cleaning method can be performed in the order set above or at the same time. A spacer plate can be inserted between the two objects to be washed, and each of the objects can be washed. Perform the joining. In this method, it is preferable that the above-mentioned spacer be grounded for the energy wave of the holding mechanism side of each object or the electrode for energy particle generation 10 312 / Invention (Supplement) / 92-07 / 92109691 200403790. Since the spacer plate inserted between the two objects to be grounded, when the object is cleaned, the molecules spattered by the etching can be captured by the spacer plate, which prevents the washed substrates from being joined. Reattach things. After cleaning, this partition can be retracted. In each of the above-mentioned installation methods of the present invention, it is preferable to perform cleaning in an environment of a vacuum degree of 130X 1CT1 to 130 Xl02Pa. If the degree of vacuum rises too high, the person who is engraved will tend to advance straight toward the object to be joined, resulting in easy reattachment. In addition, if the degree of vacuum is not set too high, the number of floating molecules will increase moderately, and the molecules splashed out by the etching will collide with the floating molecules on the way and spread out. The diffused molecules will be trapped on the wall of the grounded processing chamber, etc., and will not be easily attached again. In addition, it is preferable to reduce the pressure to less than or equal to the degree of vacuum before introducing the degree of vacuum, and then introduce a reaction gas to raise the degree of vacuum. That is, there is a concern that the planktonic molecules will reattach through the above-mentioned collision, and it is preferable to introduce an appropriate reaction gas for this. In particular, it is preferable to repeatedly replace with a reaction gas before the vacuum degree is reached. In the case where re-adhesion is prevented in this way, re-adhesion can be prevented more effectively if the two objects to be joined are washed apart by 30 mm or more. In addition, in each mounting method of the present invention, it is preferable to perform cleaning using an RF plasma. If an RF plasma is used, the desired cleaning strength can be controlled more easily. In addition, it can reduce the damage of charge accumulation, and can also clean non-conductive body. The mounting device of the present invention is used to clean the joint surfaces of two objects to be arranged facing each other with energy waves or energy particles and join the objects to each other 11 312 / Invention Manual (Supplement) / 92-07 / 92109691 200403790; characterized in that it is provided with a holding object holding mechanism for arranging the two objects to be faced up and down, and has a washing surface facing downwards of the upper object to be washed first After cleaning, it is constituted by a washing machine that cleans the upper joining surface of the lower object to be joined. In this mounting device, in order to form a unidirectional airflow during cleaning as described above, a gas supply mechanism for supplying gas from one side of the object to be bonded during cleaning and a gas extraction mechanism for extracting gas from the opposite direction are provided. Better. In addition, the installation device of the present invention is a device for washing the joining surfaces of the rain-to-be-joined objects arranged opposite to each other by energy waves or energy particles, and joining the joined objects to each other; The two to-be-joined objects are formed as a to-be-joined object holding mechanism arranged to face left and right, and are provided with a cleaning mechanism for washing the opposing joining surfaces with energy waves or energy particles. In this mounting device, the above-mentioned cleaning mechanism is constituted as a mechanism capable of substantially simultaneously cleaning the joint surfaces arranged facing each other by energy waves or energy particles. In order to form a single-direction airflow from the top to the bottom during cleaning as described above, it is preferable to have a gas extraction mechanism for supplying gas from above the object to be joined during cleaning and extracting gas from below. As the energy waves or energy particles used in the cleaning of each of the above mounting devices, plasma, ion beam, atomic beam, radical beam, laser, etc. can also be used. The ease of use and control, the cost of the device, and the simplicity of the structure are considered, and the use of a plasma is preferred. 12 S: by 312 / Invention Specification (Supplement) / 92-07 / 92109691 200403790 In the case of using a plasma as an energy wave or energy particle, it is possible to use a mechanism for maintaining the two joints to set up plasma generation. A configuration of a polarity conversion mechanism that uses electrodes and changes the irradiation direction of the generated plasma by changing the polarity of the two electrodes. As the aforementioned gas used for cleaning in the installation device of the present invention, an inert gas (such as argon), a non-oxidizing gas (such as nitrogen), a reducing gas (such as hydrogen), or a replacement gas (such as having a fluorine group, etc.) can be used. The substituent gas) and so on. In particular, in the case of plasma cleaning, argon is preferred. Furthermore, in this mounting device, it is possible to have a structure having a processing chamber that substantially covers at least the two objects to be joined and the cleaning mechanism in a sealed state. In this mounting device, it is preferable that the walls of the processing chamber other than the energy wave or energy particle generating electrode provided in the mechanism for holding the object to be grounded be grounded. Further, in the mounting device of the present invention, a capture prosthesis is disposed at one of the facing positions of the objects to be joined, and after washing the two objects alternately, each of the objects is taken out, and then the two objects are opposed to each other. It is preferable to arrange for re-washing with the aforementioned washing mechanism. The capture prosthesis is preferably grounded. In addition, the mounting device of the present invention is a device for washing the joint surfaces of the two objects to be arranged facing each other by energy waves or energy particles and joining the objects to each other; The washing mechanism can be formed by inserting the partition between the two objects to be joined and then retracting after washing. This device structure can also adopt an installation device that can be cleaned in the previously set order or at the same time 13 312 / Invention Specification (Supplement) / 92-07 / 92109691 200403790. The aforementioned cleaning mechanism is used to clean the joints. Insert a spacer plate between them, and then wash the spacer plate back into place after washing. In a device provided with such a spacer, it is preferable that the electrode for generating energy waves or energy particles on the side of each holding mechanism is grounded. In the mounting device of the present invention as described above, it is preferable that the aforementioned means is constituted by a mechanism for cleaning at a vacuum of 130 x 10-110 SO x 10 02 Pa. In this case, the aforementioned cleaning mechanism may be configured as a mechanism for introducing a vacuum degree of the reaction gas after the pressure is reduced to the vacuum degree or less, and as a mechanism for replacing the vacuum degree reaction gas. In the preparation of the above-mentioned truth, it is preferable that the aforementioned cleaning mechanism is constituted by a mechanism that separates two objects to be washed and separates them by three. Moreover, in each mounting apparatus of the present invention, the aforementioned mechanism of the RF plasma of the washing machine is constituted. In the installation method and the installation device shown in the figure, when the joint surface of the two objects to be washed is cleaned by measuring particles, the removed dirt can be prevented from adhering to the joint surface, so that the two joints can be cleaned. [Embodiment] With this state, the joining can be greatly improved. [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings and FIG. 1 to show a mounting device 312 / invention specification (supply) of the first embodiment of the present invention. / 92-07 / 92109691 can be constructed under the environment of the two quilt mechanism to protect the aforementioned spacer cleaning mechanism, the vacuum degree of the body is raised to the previous device with a vacancy of 0 mm or more It can be cleaned by using energy waves or from the joint surface to ensure reliability. Take note. 1. In this embodiment 14, 200403790, as the bonded objects to be bonded to each other, one is shown as the wafer 2 arranged on the upper side, and the other is the substrate 3 arranged on the lower side, and it is shown that the two bonded objects are paired up and down. To the configuration situation. A plurality of electrodes 4 are provided on the wafer 2 (two electrodes 4 are shown in FIG. 1), and a corresponding electrode 5 is provided on the substrate 3. The wafer 2 is held on the wafer holding mechanism 6 as one of the bonded object holding mechanisms, and the substrate 3 is held on the substrate holding mechanism 7 as the other bonded object holding mechanism. It is better to use an electrostatic chuck for keeping in a vacuum. In this embodiment, the wafer holding mechanism 6 is configured to adjust the position in the Z direction (up and down direction), and the substrate holding mechanism 7 is configured to be able to move in the X and Y directions (horizontal direction) and / or the rotation direction (0 Direction) to adjust the position. The above-mentioned substrate holding mechanism 7 is usually mounted in a state that can be moved in parallel and / or rotatable. If necessary, it can also be mounted in a form that can be moved in parallel and / or rotated and lifted (moved in the Z direction). . In addition, on the wafer holding mechanism 6 side, it is possible to adopt a device form that can perform not only a lifting operation, but also a parallel movement and / or a rotating operation. In the above description, the wafer 2 refers to, for example, an IC wafer, a semiconductor wafer, an optical element, a surface-mounted element, a wafer, and the like, and all of them are used to be bonded to the substrate 3 regardless of the type and size. The substrate 3 refers to, for example, all of resin substrates, glass substrates, thin film substrates, wafers, wafers, etc., regardless of their type and size, for bonding to the wafer 2. In this embodiment, the portion directly holding the wafer 2 in the wafer holding mechanism 6 and the portion 15 directly holding the substrate 3 in the substrate holding mechanism 7 312 / Invention Specification (Supplement) / 92-07 / 92109691 200403790 The electrode systems 8 and 9 are respectively configured so that they can function as electrodes for plasma generation. These electrode implements 8 and 9 are connected to the electrodes 10 for plasma generation with alternately replaceable polarities, and are used to clean the bonding surfaces of wafer 2 and substrate 3 between electrode implements 8 and 9 for cleaning. Structure irradiated with plasma 11. In the present embodiment, the cleaning is performed in a processing chamber 12 in which at least two objects to be bonded 2 and 3 and a cleaning mechanism (electrode tools 8 and 9) are sealed in a substantially sealed state. The structure is performed while being isolated from the external environment. The wall of the processing chamber 12, that is, the wall forming the processing chamber 12 other than the electrode tools 8 and 9 described above, is grounded. A part of the processing chamber 12 is constituted by a retractable elastic member 13 and is configured such that the processing chamber 12 can be moved to the joining step after being cleaned while being kept in a closed state. Prior to this joining step, the relative positions of the two objects 2 and 3 can be aligned by known methods. In the case of alignment, for example, an infrared camera is used to penetrate the substrate from the bottom, read the two alignment marks on the wafer and the substrate side, and correct the X, Y, and Θ directions on the holding table. Then, the wafer holding mechanism is lowered to perform bonding. In the present embodiment, in order to make the inside of the processing chamber 12 into an inert gas environment, especially an argon (Ar gas) environment, the inert gas supply is connected to the processing chamber 12 during cleaning with a plasma. Agency 1 4. This argon gas is supplied from one side to between the two objects to be bonded 2 and 3. A vacuum pump as a gas extraction mechanism 15 is connected to the opposite side of the processing chamber 12, and the argon gas supplied as described above is evacuated from the opposite side. With the supply and extraction of this gas, a single-direction air flow can be formed between the two objects 2 and 3 during cleaning. After 16 312 / Invention Specification (Supplement) / 92-07 / 92109691 200403790, the plasma cleaning method is performed in a closed state. This method is controlled by maintaining the vacuum extraction system at a certain force. A method of forming a gas flow while maintaining a certain vacuum level. In the mounting device 1 thus configured, before alignment and bonding, the bonding surface of the wafer 2 and the substrate 3 is cleaned with a plasma. In this cleaning, the surface of the wafer 2 arranged on the upper side is firstly faced downward. The bonding surface is washed, and then the bonding surface facing upward of the substrate 3 disposed on the lower side is washed. This order of washing can be reliably achieved by changing the polarity of the electrode devices 8 and 9 to change the irradiation direction of the generated plasma 11. Since the bonding surface facing downward of the wafer 2 arranged on the upper side is cleaned, and then the bonding surface facing upward of the substrate 3 arranged on the lower side is cleaned, and the bonding surface from the wafer 2 is passed through the cleaning station. Even if the removed dirt is dropped and reattached to the bonding surface of the substrate 3, the subsequent cleaning of the bonding surface of the substrate 3 can reliably remove the dirt, and as a result, the bonding of the dirt to the two can be prevented. Reattach the surfaces, and wash both joint surfaces to the desired clean state. Since the joints thus cleaned are joined to each other, the reliability of joining can be greatly improved. Moreover, in this embodiment, since the gas supply mechanism 14 and the gas extraction mechanism 15 can form a single-direction airflow between the two objects 2 and 3 during cleaning, cleaning is performed from each joint surface through The removed dirt is more difficult to reattach, and the cleaning effect can be further improved. As a result, the reliability of joining can be further improved. Fig. 2 shows a mounting device 21 according to a second embodiment of the present invention. In the present embodiment, the wafer 2 and the substrate 3 of the two objects to be bonded are not intended to be bonded to each other. 17 17 312 / Invention Manual (Supplement) / Required 07/92109691 200403790 is a case where the left and right sides are arranged oppositely. The wafer holding mechanism 2 2 is provided with a plasma generating electrode tool 2 4, and the substrate holding mechanism 2 3 is provided with a plasma generating electrode tool 25. The cleaning is performed in a state where at least the two objects to be joined 2 and 3 and the cleaning mechanism (electrode tools 2 4 and 2 5) are substantially hermetically sealed in a sealed state. As a holding mechanism in a vacuum, an electrostatic chuck is preferably used. A part of the processing chamber 26 is constituted by a retractable elastic member 27, and the processing chamber 26 is maintained in a sealed state, and is moved to an alignment and joining step after cleaning. In the case of alignment, for example, an infrared camera is used to penetrate the substrate from the bottom, read the two alignment marks on the wafer and the substrate side, and correct the X, Y, and Θ directions on the holding table. Then, the wafer holding mechanism is moved for bonding. In this embodiment, in the processing chamber 26, when the plasma is used for cleaning, an inert gas is connected to the processing chamber 26 to make it an inert gas environment, especially an argon (Ar gas) environment. Supply mechanism 2 8. This argon gas is supplied between the two objects to be joined 2 and 3 from the top to the bottom. A vacuum pump as a gas extraction mechanism 29 is connected to the opposite side of the processing chamber 26, and the above-mentioned supplied argon gas is evacuated from below in the opposite direction. With the supply and extraction of this gas, a single-direction air flow from the top to the bottom can be formed between the two objects to be bonded during cleaning. In the mounting device 21 configured in this way, before alignment and bonding, the bonding surface between the wafer 2 and the substrate 3 is cleaned with a plasma. In this cleaning, the left and right wafers 2 and the substrate 3 are bonded together. The surface is cleaned with a plasma. In this cleaning, any one of the bonding surfaces of the wafer 2 and the substrate 3 may be washed first, or may be washed substantially simultaneously. In any of the cleaning methods 18 312 / Invention Specification (Supplement) / 92-07 / 92109691 200403790, the wafer 2 and the substrate 3 are made into a pair of left and right joint surfaces arranged to extend vertically, so they are washed. The lower part is dropped, and it is no longer easy to attach to the joint surface. Therefore, the noodles are washed to a desired clean state, and since the noodles are bonded to each other, the reliability of bonding can be greatly improved. Moreover, in this embodiment, since the gas supply body extraction mechanism 29 is used to clean the air in a single direction between the two objects to be joined 2 from above and downward, the dirt removed from each joint is liable to fall downward. , More difficult to reattach to improve the cleaning effect. As a result, the reliability of bonding can be further improved. In the above-mentioned first and second embodiments, since the voltage is applied to the poles 8 or 9, 24 or 25, the electricity on the opposite side grounds the processing chamber 12 or 26. It can wash the inside of the splattered washing room, so it can effectively prevent reattachment. If the electrode is grounded, reattachment is likely to occur. However, in the present invention, a prosthesis for capture can also be used. For example, as shown in the third embodiment of FIG. The object to be bonded 3 2 (for example, 3 3) is kept clean, and the capture prosthesis 3 5 (for example, the capture prosthesis | is placed on one of the electrodes 34 and grounded to the processing chamber 36. The object to be bonded 3 2 is washed The splashed molecules can be caught and caught, and are not easily attached to the washed object 3 2. Furthermore, 3 6 is grounded. Since the inner surface of the processing chamber 36 can also be caught, it is less likely to reattach. 312 / Invention Manual (Supplement) / 92-07 / 92109691 Directional arrangement, so that the two dirt can go, and the two joints can be cleaned by the joint mechanism 2 8 and the air 3 can be formed from the surface through the washing room The electrode on the cleaning side is not grounded and the molecules are trapped on the opposite side. The electrode on the opposite side should be cleaned first. The electrode on the wafer for power generation of the slurry is generated. The etched self-prosthesis 3 5 is captured by the processing chamber, so 19 200403790 and In the present invention, a configuration in which a partition plate is inserted may be adopted. For example, as shown in the fourth embodiment of FIG. 4, the electrodes 4 2, 4 3 that are held opposite to each other in the process chamber 4 i are applied to the electrodes 4 4 and 4 5 alternately for plasma generation. In the configuration of the voltage generated by the electrode 46, the spacer plate 4 7 is inserted between the two objects 4 2 and 4 3 and one of the objects is washed. The partition plate 4 7 is grounded together with the processing chamber 4 1. In this cleaning, since the molecules flying out of the self-cleaned object 3 2 due to etching are captured on the spacer plate 4 7, it is not easy to reattach to the cleaned object, but for the opposite side The objects to be joined will not be attached because they are shielded by the partition plates 47. Since the processing chamber 41 is also grounded, it is more difficult to attach. After the two objects to be joined are washed, the partition plate 47 can be retracted. The cleaning using the partition plate 47 as described above may be adopted as the present cleaning or may be adopted as the prior cleaning. In the present invention, as described above, it is preferable that the vacuum degree of the environment at the time of washing is in the range of 130 × 10 · 1 to 130 × 10 2 Pa. In addition, it is preferable to introduce a reaction gas and increase the vacuum level before reducing the vacuum level to less than the vacuum level. Due to concerns about reattachment due to the impact of planktonic molecules, they must be placed in a suitable reactive gas. It is preferable to replace it with a reactive gas repeatedly before the vacuum degree is reached. Moreover, when preventing such re-adhesion, it is possible to prevent re-adhesion more effectively if the two objects to be joined are separated by 30 mm or more and washed. In this way, in the installation method and the installation device of the present invention, since the joint surface of the two joined objects is cleaned with energy waves or energy particles, it is possible to prevent the dirt removed from the joint surface from re-adhering to the joint surface. Construction of joint surface
312/發明說明書(補件)/92-07/92109691 20 200403790 成，可將兩接合面都洗淨成所要的潔淨之狀態，藉此，可 大幅提高接合的可靠性。 (產業上之可利用性） 本發明之安裝方法及安裝裝置，可適用於以能量波或能 量粒子對被接合物進行洗淨之後再進行接合的所有的安裝 作業，可有效地防止對接合面的再附著，而可達成高可靠 性的安裝。 【圖式簡單說明】 圖1爲本發明之第1實施形態之安裝裝置的槪略構成 圖。 圖2爲本發明之第2實施形態之安裝裝置的槪略構成 圖。 圖3爲本發明之第3實施形態之安裝裝置的槪略構成 圖。 圖4爲本發明之第4實施形態之安裝裝置的槪略構成 圖。 (元件符號說明） 1、2 1 安裝裝置 2 晶片 3 基板 4 晶片的電極 5 基板的電極 6、 2 2 晶片保持機構 7、 2 3 基板保持機構 21 312/發明說明書(補件)/92_〇7/92109691 200403790 8、 9、 2 4 ' 2 5 電 極 機 具 10 電 漿 產 生 用 電 極 11 電 漿 12 、2 6 處 理 室 13 、2 7 彈 性 構 件 14 、2 8 氣 體 供 給 機 構 15 、2 9 氣 am 體 抽 取 機 構 3 1 電 漿 產 生 用 電 源 3 2 經 洗 淨 被 接 合 物 3 3 、3 4 電 極 3 5 捕 捉 用 假 體 3 6 處 理 室 4 1 處 理 室 4 2 、4 3 被 接 合 物 4 4 、4 5 電 極 4 6 電 漿 產 生 用 電 極 4 7 間 隔 板 22 312/發明說明書(補件)/92-07/92109691312 / Invention Specification (Supplement) / 92-07 / 92109691 20 200403790, both joint surfaces can be washed to a desired clean state, thereby greatly improving the reliability of the joint. (Industrial Applicability) The mounting method and the mounting device of the present invention can be applied to all mounting operations where the bonded objects are cleaned by energy waves or energy particles, and the bonding surfaces can be effectively prevented. Re-attachment for highly reliable installation. [Brief description of the drawings] Fig. 1 is a schematic configuration diagram of a mounting device according to a first embodiment of the present invention. Fig. 2 is a schematic configuration diagram of a mounting device according to a second embodiment of the present invention. Fig. 3 is a schematic configuration diagram of a mounting device according to a third embodiment of the present invention. Fig. 4 is a schematic configuration diagram of a mounting device according to a fourth embodiment of the present invention. (Description of component symbols) 1, 2 1 Mounting device 2 Wafer 3 Substrate 4 Wafer electrode 5 Substrate electrode 6, 2 2 Wafer holding mechanism 7, 2 3 Substrate holding mechanism 21 312 / Invention specification (Supplement) / 92_〇 7/92109691 200403790 8, 9, 2 4 '2 5 Electrode tool 10 Electrode for plasma generation 11 Plasma 12, 2 6 Processing chamber 13, 2 7 Elastic member 14, 2 8 Gas supply mechanism 15, 2 9 gas am Extraction mechanism 3 1 Power source for plasma generation 3 2 Washed object 3 3, 3 4 Electrode 3 5 Prosthesis for capture 3 6 Processing chamber 4 1 Processing chamber 4 2, 4 3 Object 4 4, 4 5 Electrode 4 6 Electrode for plasma generation 4 7 Spacer 22 312 / Invention manual (Supplement) / 92-07 / 92109691