SU958978A2 - Electric charge carrier speed pickup - Google Patents

Description

The invention relates to a measurement technique and can be used to measure the velocity of electric charge carriers.

According to the main auth. 569950 is a speed sensor for electric charge carriers, consisting of a curved grounded shield on the output side of charge carriers, a grounded shield on the input side of charge carriers, poklegoe dielectric, circuit, covering the path of the carrier, measuring device, fender visor and

Racks.

The disadvantages of the device include low sensitivity and measurement accuracy.

The purpose of the invention is to increase the sensitivity and accuracy of measurement by improving the known device.

To achieve this goal, the contour encompassing the path of the carrier is made in the form of a MDS element with a cylindrical substrate, on the inner surface of which the source areas, drains, gate dielectric and gate are formed, and on the outer surface

an electrode connected to the screens and to the source area, wherein the sensor is provided with a power source connected to the source and drain areas on diametrically opposite sides and connected in series with the measuring device.

The drawing shows the scheme

.Q device.

The device consists of an earthed nepBoi-o shield 1 on the output side of charge 2 carriers, to which a stand-up hood 4, the second grounded, is attached to the racks 3.

5 of the screen 5 on the input side of charge carriers with a dielectric layer 6, an element 7 sensitive to a change in the velocity of carriers of an electric charge made in the form of a hollow

 cylinder 8, covering their path and connected to power source 9 and measuring device 10.

The element 7 is made on the basis of the MDP25 element containing a semiconductor substrate 11, on the inner surface 12 of which the areas of the source 13, the drain 14, the charging dielectric 15 and the gate are formed

Claims (1)

30 8. made in the form of a hollow cylinder, on the outer surface of which the MOS element 7 is placed, and on the outer surface 16 of the semiconductor substrate 11 is placed the electrode of the substrate 17 connected to the first 1 and BTOpfcw 5 screens and the source area 13, all areas MDP element 7 is made in the form of a shutter, and the additionally introduced power source 9 is connected to source 1 and drain 14 areas with diametrically opposite sides and forms an electrical circuit 1 with measuring device 10. The device operates as follows. The sensor is installed in the medium of an electric charge carrier 2 to obtain information about the speed of the carrier: in one direction or another. When measuring the speed of particles 2 moving, for example, from top to bottom, the sensor is mounted as shown in the drawing. During the transit time of carrier 2 in the gate 8, a charge is induced, which is fixed by the measuring device 10 in the circuit 18 by means of an .MDP element 7, in which an inverse channel between the source 13 and drain 14 regions is formed. gate 8. Moreover, the device is sensitive to carriers m 2 of one polarity of charge, to measure the reverse polarity it is necessary to use a different type of conduction channel (for example, instead of the n-type p-type), Thus, the device can be performed on MOS transistors .p- and p-type and soder to press both the built-in channel, and induced. The fender visor 4, mounted on racks 3 on screen 1 from the side of the exit of charge carriers 2, prevents particles from moving upwards, and charge carriers that pass through the measuring section (distance between electrodes) roll down the curved screen to the periphery. Thus, the device makes it possible to determine the rate of charged particles. The sensor of the speed of electric charge carriers due to the introduction of a power source in the black and the execution of a circuit in the form of a MIS element sensitive to a change in the speed of electric charge carriers in a semiconductor substrate, on the inner surface of which the source, drain, gate dielectric and gate regions are formed and on the outside - the substrate electrode is placed, connected to the first and secondary screens and the source area, when all the areas of the M.Shch1-element are in the form of a shutter, covering the carrier path The electrical charge when connected to the power source regions of the source and drain on diametrically opposite sides, so that an electrical circuit is formed together with the measuring device, characterized by progotipa advantageous and allows to increase the sensitivity and measurement accuracy. Claims of the Invention Sensor of the speed of electric charge carriers according to the author. No. 569950, characterized in that / in order to increase the sensitivities and measurement accuracy, the contour covering the carrier path is made in the form of a MOS element with a cylindrical substrate, on the inner surface of which the source, drain, sub dielectric and gate regions are formed, and on the upper surface of the electrode there is an electrode connected to the screens, and from the source, the sensor is supplied with a power supply point, which is placed at night on the source and drain area with opposite diameter and opposite sides the measuring device. Sources of information taken into account during the examination 1. USSR Author's Certificate No. 569950, cl. G 01 P 3/64, 1975.