SU843787A3 - Полупроводниковый матричный накопитель - Google Patents
Полупроводниковый матричный накопитель Download PDFInfo
- Publication number
- SU843787A3 SU843787A3 SU772467160A SU2467160A SU843787A3 SU 843787 A3 SU843787 A3 SU 843787A3 SU 772467160 A SU772467160 A SU 772467160A SU 2467160 A SU2467160 A SU 2467160A SU 843787 A3 SU843787 A3 SU 843787A3
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- capacitors
- charge
- source
- word
- semiconductor
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title description 3
- 239000004606 Fillers/Extenders Substances 0.000 claims 2
- 239000003990 capacitor Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Description
1 . Изобретение относитс к вычислительной технике, в частности к J CTройствам пам ти на полупроводниковы элементах. В технике интегральных схем при изготовлении полупроводниковых устройств пам ти наиболее компактными получаютс устройств-а, в которых чейки пам ти имеют минимум элементов . Высока плотность может быть получена с емкостными чейками пам ти , которые состо т только из запоминающего конденсатора и из элект ронного ключа. Известен полупроводниковый матричный накопитель, содержащий чейк пам ти, которые коммутируютс посре ством полевого транзистора Наиболее близким техническим решением к предлагаемому вл етс пол проводниковый матричный накопитель, содержащий полупроводниковую подлож ку Р-проводимости, легированную бором , в котором расположены области обеднени , над которыми размещены параллельные разр дные шины с изолирующими сло ми из окисла кремни , а над разр дными шинами в ортогонал ном направлении расположены словарн Цель изобретени - расширение области применени накопител за счет возможности использовани его в запоминающих устройствах записи-считывани с индуктированными сигналами записи и инверсионными конденсаторами , используемых в качестве элементов пам ти. Указанна цель достигаетс тем, что полупроводниковый матричный накопитель , содержащий полупроводниковую подложку Р-проводимости, легированную бором,- в которой расположены области обеднени , над которыми размещены параллельные разр дные шины с изолируюви1ми сло ми из окисла кремни , а ад разр дными шинам в ортогональном направлении расположены словарные шины, содержит в полупроводниковой подложке р-проводимости две легированные фосфором или мЕЛшь ком диффузионные шины смещени n-проводимости, размещенные по торцам подложки параллельно разр дным шинам, и два изол ционных сло , расположенных между полупроводниковой подложкой Р-проводимости и разр дными шинами, при этом первый слой, выполненный из двуокиси кремни , размещен на поверхности полупроJS X
,, p
фие.6
Составитель В.Вакар Редактор Е.Дичинска Техред А.Ач ; Корректор О.Билак
Заказ 5086/49Тираж 645Подписное
ВНИИПИ Государственного комитета СССР
по делам изобретений и открытий 113035, Москва, Ж-35, Раушска наб., д . 4/&
Филиал ППП Патент, г. Ужгород, ул. Проектна , 4
Date : 03/05/2001
Number of pages : 4
Previous document : SU 843787
Next document : SU 843789
Claims (1)
- 20 Для чего неподвижные продольные брусья имеют пазы 8, а главный поперечный брус и удлинители — пазы 9. К удлинителю присоединяется боковой прицеп 10 для агрегатирования орудия в транспортном положе25 нии. Рама орудия, состоящая из главного поперечного бруса 1, удлинителей 5, центрального продольного бруса 2 и неподвижных брусьев 4, опирается на пневматические самоустанавливаемые колеса 11. Меж30 ду колесами и рамой установлены гидроци-
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/672,197 US4080590A (en) | 1976-03-31 | 1976-03-31 | Capacitor storage memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU843787A3 true SU843787A3 (ru) | 1981-06-30 |
Family
ID=24697550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU772467160A SU843787A3 (ru) | 1976-03-31 | 1977-03-30 | Полупроводниковый матричный накопитель |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US4080590A (ru) |
| JP (1) | JPS52119828A (ru) |
| AT (1) | AT377378B (ru) |
| AU (1) | AU501754B2 (ru) |
| BE (1) | BE851845A (ru) |
| BR (1) | BR7701807A (ru) |
| CH (1) | CH607232A5 (ru) |
| DD (1) | DD130698A5 (ru) |
| DE (1) | DE2705992B2 (ru) |
| ES (1) | ES457351A1 (ru) |
| FI (1) | FI63127C (ru) |
| IT (1) | IT1113763B (ru) |
| NL (1) | NL7701055A (ru) |
| SE (1) | SE417381B (ru) |
| SU (1) | SU843787A3 (ru) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4230954A (en) * | 1978-12-29 | 1980-10-28 | International Business Machines Corporation | Permanent or semipermanent charge transfer storage systems |
| US4287576A (en) * | 1980-03-26 | 1981-09-01 | International Business Machines Corporation | Sense amplifying system for memories with small cells |
| US4301519A (en) * | 1980-05-02 | 1981-11-17 | International Business Machines Corporation | Sensing technique for memories with small cells |
| US4445201A (en) * | 1981-11-30 | 1984-04-24 | International Business Machines Corporation | Simple amplifying system for a dense memory array |
| US4574365A (en) * | 1983-04-18 | 1986-03-04 | International Business Machines Corporation | Shared access lines memory cells |
| US4652898A (en) * | 1984-07-19 | 1987-03-24 | International Business Machines Corporation | High speed merged charge memory |
| US4648073A (en) * | 1984-12-31 | 1987-03-03 | International Business Machines Corporation | Sequential shared access lines memory cells |
| US5589707A (en) * | 1994-11-07 | 1996-12-31 | International Business Machines Corporation | Multi-surfaced capacitor for storing more charge per horizontal chip area |
| US7031136B2 (en) * | 2002-04-09 | 2006-04-18 | Ngimat Co. | Variable capacitors, composite materials |
| US9595526B2 (en) * | 2013-08-09 | 2017-03-14 | Apple Inc. | Multi-die fine grain integrated voltage regulation |
| US10468381B2 (en) | 2014-09-29 | 2019-11-05 | Apple Inc. | Wafer level integration of passive devices |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852800A (en) * | 1971-08-02 | 1974-12-03 | Texas Instruments Inc | One transistor dynamic memory cell |
| US3931465A (en) * | 1975-01-13 | 1976-01-06 | Rca Corporation | Blooming control for charge coupled imager |
| US3987474A (en) * | 1975-01-23 | 1976-10-19 | Massachusetts Institute Of Technology | Non-volatile charge storage elements and an information storage apparatus employing such elements |
| US3979734A (en) * | 1975-06-16 | 1976-09-07 | International Business Machines Corporation | Multiple element charge storage memory cell |
| US3986180A (en) * | 1975-09-22 | 1976-10-12 | International Business Machines Corporation | Depletion mode field effect transistor memory system |
-
1976
- 1976-03-31 US US05/672,197 patent/US4080590A/en not_active Expired - Lifetime
-
1977
- 1977-01-28 JP JP793077A patent/JPS52119828A/ja active Granted
- 1977-02-02 NL NL7701055A patent/NL7701055A/xx not_active Application Discontinuation
- 1977-02-12 DE DE2705992A patent/DE2705992B2/de active Granted
- 1977-02-14 AT AT0097377A patent/AT377378B/de not_active IP Right Cessation
- 1977-02-14 CH CH179177A patent/CH607232A5/xx not_active IP Right Cessation
- 1977-02-25 BE BE175275A patent/BE851845A/xx not_active IP Right Cessation
- 1977-03-04 SE SE7702445A patent/SE417381B/xx not_active IP Right Cessation
- 1977-03-04 IT IT20890/77A patent/IT1113763B/it active
- 1977-03-22 FI FI770896A patent/FI63127C/fi not_active IP Right Cessation
- 1977-03-22 BR BR7701807A patent/BR7701807A/pt unknown
- 1977-03-25 AU AU23651/77A patent/AU501754B2/en not_active Expired
- 1977-03-29 DD DD7700198121A patent/DD130698A5/xx unknown
- 1977-03-30 ES ES457351A patent/ES457351A1/es not_active Expired
- 1977-03-30 SU SU772467160A patent/SU843787A3/ru active
Also Published As
| Publication number | Publication date |
|---|---|
| FI63127B (fi) | 1982-12-31 |
| FI63127C (fi) | 1983-04-11 |
| CH607232A5 (ru) | 1978-11-30 |
| BE851845A (fr) | 1977-06-16 |
| US4080590A (en) | 1978-03-21 |
| NL7701055A (nl) | 1977-10-04 |
| JPS52119828A (en) | 1977-10-07 |
| ES457351A1 (es) | 1978-02-01 |
| BR7701807A (pt) | 1978-01-24 |
| DE2705992C3 (ru) | 1979-01-25 |
| FI770896A (ru) | 1977-10-01 |
| AU2365177A (en) | 1978-09-28 |
| AT377378B (de) | 1985-03-11 |
| DE2705992B2 (de) | 1978-05-24 |
| DE2705992A1 (de) | 1977-10-13 |
| DD130698A5 (de) | 1978-04-19 |
| IT1113763B (it) | 1986-01-20 |
| SE7702445L (sv) | 1977-10-01 |
| AU501754B2 (en) | 1979-06-28 |
| SE417381B (sv) | 1981-03-09 |
| JPS5634953B2 (ru) | 1981-08-13 |
| ATA97377A (de) | 1984-07-15 |
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