SU799640A3 - Charge for producing ceramic material - Google Patents

Charge for producing ceramic material Download PDF

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Publication number
SU799640A3
SU799640A3 SU742095758A SU2095758A SU799640A3 SU 799640 A3 SU799640 A3 SU 799640A3 SU 742095758 A SU742095758 A SU 742095758A SU 2095758 A SU2095758 A SU 2095758A SU 799640 A3 SU799640 A3 SU 799640A3
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USSR - Soviet Union
Prior art keywords
phase
weight
composition
mixture
ceramic material
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SU742095758A
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Russian (ru)
Inventor
Джон Ламби Рональд
Норт Бернард
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Джозеф Лукас Лимитед (Фирма)
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Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111Fine ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/597Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS

Abstract

A mixture which exclusively consists of 98% by weight of nitrogen silicide, 1 to 60% by weight of aluminium nitride, 0.5 to 50% by weight of silica and 0.05 to 60% by weight of alumina or of 40-60% by weight of aluminium nitride, 15 to 45% by weight of silica and 0.05 to 50% by weight of alumina, is sintered at a temperature from 1200 DEG C to 2000 DEG C. Alternatively, the mixture contains at least 95% of the first-mentioned 4 substances and glass, melted at the said temperature, in the form of a borosilicate glass, iron silicate glass, manganese glass or lithium glass. This silica is present in a molar ratio of 1:2 with a part of the aluminium nitride, and the alumina is present in a molar ratio of 1:1 with the remainder of the aluminium nitride. In the absence of nitrogen silicide, the silicon/aluminium/nitrogen/oxygen atomic ratio is 6-z:z:8-z:z, with z > 4 and </= 5. The constituents of the mixture react with one another to form a ceramic material. This is intended for materials exposed to high temperatures.

Description

Изобретение относитс  к получению керамического материала на основе нит рида кремни . Известно изготовление керамического материала из шихты, содержащей более 50% AbN, остальное - SiO, и 1.234 Однако в этом случае не предусмотр но получение оксинитрида кремни -алюмини  однофазного состава. Известна также шихта дл  получени  оксинитрида кремни -алюмини , содержаща  50-90% 81зЫ4 и 10-50% AKj материал из которой спекаиот гор чим прессованием при температуре 16501700с и давлении 150-250 кг/см . Однако данное соотношение в указанной двухксмпонентной системе йе приводит к получению однофазного оксинитрида кремни -алюмини . Цель изобретени  - получение однофазного керамического материала, в котором аюмное соотношение Si:АС: :N:O отвечает формуле (6-Z):Z:(8-Z):2 где О Z 6 5 , Поставленна  цель достигаетс  за счет того, что шихта дл  изготов-лени  керс1мического материала, содержаща  SijN4 и АйгО, дополнительно содержит SiO2 и АбЫ при следующем соотношении компонентов, вес.%: Ае2Оа 0,5-60 SiOi0,5-50 AgN1-60 . 313 N4 Остальное, причем мольное соотношение SiO, и АЗ О удовлетвор ет условно SiOg :ХАеы 1:2 (K-X)AeN;Ag 03 1:1, где К и X лежат в пределах, указанных дл  соответствующих компонентов. Пример 1 .Готов т шихту следующего состава, вес,%: 75,34 нитрида кремни  со средним размером частиц 3 мкм и содержанием Об 89%; 13,87 нитрида алюмини , имеющего средний размер частиц 11,5 мкм; 0,89 окиси алюмини  и 9,9 двуокиси кремни . Смешение и пбмол компонентов осуществл ют в коллоидной мельнице в изопропиловом спирте до размера частиц менее 3 мкм. Затем смесь сущат, просеивают и подвергают гор чему прессованию в графитовой пресс-форме, .причем на все графитовые поверхности предварительно нанос  слой нитрида бора толщиной около 0,25 мм. Повышение температуры до 1800°С и давлени  до 1,5 т/дюйм 2 производ т одновр емен . V, : rf« «|The invention relates to the preparation of a silicon nitride-based ceramic material. The manufacture of a ceramic material from a mixture containing more than 50% AbN, the rest is SiO, and 1.234 is known. However, in this case, it is not envisaged to obtain silicon oxynitride — an aluminum single-phase composition. A mixture for obtaining silicon oxynitride-aluminum is also known, containing 50-90% 81SY4 and 10-50% AKj material from which it is hot pressed at a temperature of 16501700s and a pressure of 150-250 kg / cm. However, this ratio in this two-component system does not result in a single-phase silicon oxynitride-aluminum. The purpose of the invention is to obtain a single-phase ceramic material in which the Si: AC:: N: O ratio corresponds to the formula (6-Z): Z: (8-Z): 2 where O Z 6 5, the goal is achieved due to that the charge for the manufacture of a kersey material, containing SijN4 and AygO, additionally contains SiO2 and Aby in the following ratio of components, wt.%: Ae2Oa 0.5-60 SiOi0.5-50 AgN1-60. 313 N4 Else, and the molar ratio of SiO and AZ O satisfies conditionally SiOg: XAy 1: 2 (K-X) AeN; Ag 03 1: 1, where K and X lie within the limits specified for the respective components. Example 1. A mixture of the following composition is prepared, weight,%: 75.34 silicon nitride with an average particle size of 3 μm and About 89%; 13.87 aluminum nitride having an average particle size of 11.5 microns; 0.89 alumina and 9.9 silica. Mixing and paramol of the components is carried out in a colloid mill in isopropyl alcohol to a particle size of less than 3 microns. The mixture is then sieved, sieved and hot pressed in a graphite mold, and, on all graphite surfaces, a layer of about 0.25 mm of boron nitride is pre-deposited. Temperature rise up to 1800 ° C and pressure up to 1.5 t / in 2 is carried out simultaneously. V,: rf «« |

t - .;.. vJ.«t -.; .. vJ. "

Claims (2)

тээбТо ИО в течение 30 мин, и выдерживают при этих услови х в течение 1 ч, Полученный продукт по данным рент геновского спектрального анализа, состоит из практически однофазного материала состава S±, т 7 где . Кристаллическа  структура матери1ала представл ет собой (3 -фазу 81зЫ4 с измененными параметрами элементарной  чейки а и с равными, соответственно 7,648 и 2,938. . Пример 2. Из смеси, имеющей состав, вес.%: 41,34 , 26,54 31зН4, Si02 и 2,64 , получают материал по способу, описан ному в примере 1. Получают однофазны материал, отвечающий вышеприведенной форйлуле, в которой 2 3. Размер а и с элементарной  чейки составл ет в этом случае, соответственно, 7,70 и2 ,986. Пример З.Из смеси состава вес.%: 12,50 S i 0,28 ,36 А1зОз,52,46 А 1N 7,03 Si3N4 получают материал по описанному способу, но при температуре гор чего прессовани  1850с. Получают практически однофазный материал (95%), отвечающий указанной выше формуле, в которой Z 4,.6. ОптимальньАШ температурами получени  данного материала  вл ютс  1500-1800С, поскольку именно в этом интервале скорость протекани реакци достаточно велика, а весовые потери еце незначительны. Таким образом, предлагаемый состав шихты позвол ет получать практически однофазный продукт - оксинитрид кремни -алюмини . Формула изобретени  Шихта дл  изготовлени  керамического материала на основе оксинитрида кремни -алюмини , содержаща  , отличающа с  тем, что, с целью получени  однофазного керамического материала, в котором атомное соотношение отвечает формуле (6-Z) : Z: (8-Z) , где О Z 5, она дополнительно содержит SiOg и AfiN при следующем соотношении компонентов, вес.%: АбзОз0,5-60 . S1O20,5-50 AgN1-60 Si3N4 Остальное причем мольное соотношение SiO, и удовлетвор ет условию SiO : xAgN 1:2 ( K-x)ABN : AgjO 1-1 где к и X лежат в пределах, указанных дл  соответствующих компонентов. Источники информации, прин тые во внимание при экспертизе 1.Патент ФРГ № 1471035, кл. 80 b 8/183, 1970.  tebTo IO for 30 min, and kept under these conditions for 1 h. The resulting product, according to x-ray spectral analysis, consists of a practically single-phase material of composition S ±, t 7 where. The crystal structure of the material is (3-phase 81zY4 with changed parameters of the elementary cell a and with equal, 7.648 and 2.938, respectively. Example 2. From a mixture having a composition, wt.%: 41.34, 26.54 31 Hz, Si02 and 2.64, the material is obtained according to the method described in Example 1. A single-phase material is obtained, corresponding to the above formula, in which 2 3. The size a and from the unit cell is in this case, respectively, 7.70 and 2, 986. Example 3. From a mixture of the composition in wt.%: 12.50 S i 0.28, 36 AlzOz, 52.46 A 1N 7.03 Si3N4, the material is obtained by the described method, but at The hot pressing temperature is 1850 C. A virtually single phase material is obtained (95%), corresponding to the above formula, in which Z 4, .6. The optimum AS temperature for obtaining this material is 1500-1800 ° C, since it is in this interval that the reaction rate is high enough, and the weight loss of the ence is insignificant. Thus, the proposed composition of the charge makes it possible to obtain an almost single-phase product, silicon oxynitride, aluminum. Claims for the manufacture of a ceramic material based on silicon oxynitride-aluminum, comprising, in order to obtain a single-phase ceramic material in which the atomic ratio corresponds to the formula (6-Z): Z: (8-Z), where About Z 5, it additionally contains SiOg and AfiN in the following ratio of components, wt.%: Abz0.5-60. S1O20.5-50 AgN1-60 Si3N4 The rest is the molar ratio of SiO, and satisfies the condition SiO: xAgN 1: 2 (K-x) ABN: AgjO 1-1 where k and X lie within the limits specified for the respective components. Sources of information taken into account in the examination 1.Patent of Germany No. 1471035, cl. 80 b 8/183, 1970. 2.Авторское свидетельство СССР № 331047, кл. С 04 В 35/58, 1970.2. USSR author's certificate number 331047, cl. From 04 to 35/58, 1970.
SU742095758A 1974-06-20 1974-12-27 Charge for producing ceramic material SU799640A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2733174A GB1482465A (en) 1974-06-20 1974-06-20 Method of producing a sintered ceramic product

Publications (1)

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SU799640A3 true SU799640A3 (en) 1981-01-23

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SU742095758A SU799640A3 (en) 1974-06-20 1974-12-27 Charge for producing ceramic material

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JP (1) JPS6041025B2 (en)
AT (1) AT367386B (en)
BE (1) BE823935A (en)
CA (1) CA1048229A (en)
CH (1) CH622231A5 (en)
DE (1) DE2461740A1 (en)
DK (1) DK659974A (en)
FR (1) FR2275423A1 (en)
GB (1) GB1482465A (en)
IT (1) IT1026183B (en)
NL (1) NL7416980A (en)
SE (1) SE404182B (en)
SU (1) SU799640A3 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1123862A (en) * 1978-09-20 1982-05-18 J. Thomas Smith Oxidation resistant silicon nitride containing rare earth oxide
EP0100380B1 (en) * 1981-02-05 1987-06-16 Sumitomo Electric Industries Limited Method for plastic deformation of non-ferrous metals
DE3216308A1 (en) * 1982-04-30 1983-11-03 Feldmühle AG, 4000 Düsseldorf Sintered moulding based on silicon nitride
US4790560A (en) * 1984-09-06 1988-12-13 Honda Giken Kogyo Kabushiki Kaisha Independent rear suspension for use on motor vehicles

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FR2275423A1 (en) 1976-01-16
FR2275423B1 (en) 1978-10-13
BE823935A (en) 1975-04-16
GB1482465A (en) 1977-08-10
IT1026183B (en) 1978-09-20
DK659974A (en) 1975-12-21
CA1048229A (en) 1979-02-13
NL7416980A (en) 1975-12-23
DE2461740A1 (en) 1976-03-25
SE7416277L (en) 1975-12-22
SE404182B (en) 1978-09-25
ATA1039474A (en) 1981-11-15
AU7646874A (en) 1976-06-17
JPS51508A (en) 1976-01-06
AT367386B (en) 1982-06-25
JPS6041025B2 (en) 1985-09-13
CH622231A5 (en) 1981-03-31

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