SU703871A2 - Method of joining different materials - Google Patents

Description

  one

The invention relates to the field of soldering and can be used in the assembly of semiconductor devices and integrated circuits.

According to the main auth. 9,653,644 is a known method of soy; n (for dissimilar materials, in which solder is placed between the porous tape and the surface to be connected to it or impregnates the tape with solder in advance. Then soldering is performed at the melting temperature of the solder with a small from oxidation: the atmosphere of hydrogen, inert gases, etc. Liquid solder, impregnating the porous tape, disperses and goes into the zone of separation of the porous medium and the soldered surface in the state activated due to dispersion; c also due to the fact that dispersion facilitates the reduction of oxidation.

The disadvantage of this method is the low electrical and thermal conductivity and the high level of mechanical stresses of the compound obtained.

The aim of the invention is to improve the electrical, thermal and mechanical properties of the compound. This goal is achieved by

that according to the proposed method, the porous metallic medium is made of a two-layer with a pore size in the region adjacent to the semiconductor Q body, less than in the region adjacent to the meta-surface.

When using a porous metal medium with a size of 5–10 µm in size, thermomechanical stresses are qualitatively dissociated,: due to the difference k, t, p. metal and semi-. conductor, due to the fact that the percentage of the plastic component of the medium directly depends on the pore size and porosity, for example,

0 porous medium of nickel and sol 2.5: ..:

ENI d.20.2 X 10 n / m E lane 2.5 2.0. X 10 N / m On the other hand, a porous medium with a pore size of 0 / 1–1 µm provides a low value of thermal and electrical contact resistances, as the solder activity increases with increasing degree of solder dispersion (with a decrease in Wfera pore size). Shysh yu vvbd5tka7 ed1 about uvshta 3 1y1Shg6sb11ro contact. .. ,,; the pore size provides an increase in the area of contact between the OrbVodnikov body and the porous medium, which provides electrical and thermal contact between the floor and the Yodosha / tovolaych. V.-bf -i -iv.r.f-i-ir-iJ, “l Wtil-.t .--., - - .-- V.- ь; --- - - .--.,. Ielektrich her kuyu rif 1r con BO dim with fffKfai, for example, in the case of the use of porous nickel and solder PSr 2.5: .... „„ -.,. „.„: ... v.,., ..,. ,., .., Lt 92 W / MGrad. ApSr 2.5 - 38 W / MGrad, 8 X 10 ohm-cm - L. psr ,,, 6 ohm-cm 7 / Smaller p eU ° 1 b, and the composition of the solder that crystallizes in it (for example, 11 W a - atsy and p a rst in an en o about n. In nickel in the light increases with decreasing pores), and the silicon-nickel contact resistivity is significantly lower than the contact of silicon and lead, while the pore size from 0.1 to 1 μm is produced by the coking process of fine powder at lead soldering temperatures. -250 ° h-400 ° C (average pore size of the porous medium, determined mainly by the dispersion of the original powder),: ... ,,,, :: "With regard to the isolation of the thermomechan of no stresses, optimization of compounds like kind of should consist in increasing plasticity ost porous medium (at the porosity and pore size from 5 to 10 μm), except for the TOR67, there is a continuous condition of sufficiently high dispersion ™ ".,., .- ..,.,.,.,", ... „,, ™ g,.“. ,,,, with porous erpeftn, drive sh. I to self--. to heal microlengths by .ShTZKotemppera urn DUT by sintering sintering, to ensure the quality of the PC soydine of a semiconductor body with metal; scrap; Example c5Continuous of method. CEF silicon crystals — 4.5 with a size of 3 X 3.5 of them with sprayed and primary aluminum for measuring electr- • - - - -; --.- -, .-- .. L., fpH4eCKO ro resistance To a circuit crystal (aluminum metallization) - podpozhka (nickel) were falling on a compact .. l-. Crystals of the same size, but with diffusible resistors Camer LosC thermal resistance Rp system Crystal-substrate, In the Substrate Base, Tuff-2 type hulls, PA crystals of EEF-4.5 orientation (1P) with a size of 3x3 mm with diffusion 1MI were used resistance strain gages, predict lrch level of crystal tension according to relative change in resistance of resistance strain gages. The crystals were soldered to nickel-plated copper substrates with a thickness of another 0.2 mm. All three cases were soldered by soldering PSR 2.5 with porous gaskets, single-layer with a pore size of 0.110, 0 μm and two-layer with pore size in the zone adjacent to the semiconductor crystal (zone a), 0.11, 0 μm, and В; the zone adjacent to: metal (zone b), 5.0-10.0 microns. Soldering mode:., 370-380 ° C Temperature Dyvlёsho 80-90 g crystal 3.0 min. howling of soldering results

0.1

one

single layer

iSr; SS --l tfSfeg M 4 «« «« SiJ

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0.03

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Thus, the use of a two-layer porous gasket makes it possible to increase the percentage of yield of devices and integrated circuits in terms of 3Jie: t) parameters by reducing the peak temperature effects while ensuring high strength characteristics of the compound; to increase the productivity of the installation of semiconductor devices, devices and integrated circuits by introducing group soldering in conveyor furnaces with high thermal, electrical and mechanical properties of the joints; get significant savings precious and scarce

703871

metals due to the elimination of gilding cases and gold-containing solders.

Claims (1)

Invention Formula The method of joining dissimilar materials according to auth. W 653644, characterized in that in order to improve the electrical, thermal and mechanical properties of the compound, the porous membrane and the medium are made two-layer with pore size in the region adjacent to the semiconductor body, less than in the region; prilezhapdey to metashlichesky surface.