SU598630A1 - Device for introducing into reaction chamber - Google Patents
Device for introducing into reaction chamberInfo
- Publication number
- SU598630A1 SU598630A1 SU742054359A SU254359A SU598630A1 SU 598630 A1 SU598630 A1 SU 598630A1 SU 742054359 A SU742054359 A SU 742054359A SU 254359 A SU254359 A SU 254359A SU 598630 A1 SU598630 A1 SU 598630A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- rings
- gases
- bevel
- gas
- reaction chamber
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Description
(54) УСТРОЙСТВО ВВОДАГАЗОВ В РЕАКЦИОННУЮ КАМЕРУ(54) DEVICE OF INPUT OF GAS INTO THE REACTION CAMERA
/ .1Изобретение относитс к устройствам ввода газов в реакционную камеру дл процессов газовой эпитаксии, ркис:лёнш1 и диффузий и может быть использовано в полупроводниковой технике . -. . .в.известны устройствах дл эпитаксиального осаждени подачу газов в камеру осуществл ют через трубки с отверсти ми, кольцеобразные каналй или капилл рные в корпусе реактора / .1 The invention relates to gas injection devices in the reaction chamber for gas epitaxy processes, Rix: Lensh and diffusions and can be used in semiconductor technology. -. . .in known devices for epitaxial sedimentation, the flow of gases into the chamber is carried out through tubes with holes, annular channels or capillaries in the reactor vessel.
выполненные таким образом устройства ввода газов, однако, не обеспечивают необходимого смешивани компонентов , однородного поступлени их к осаждаемой поверхности. the gas injection devices thus designed, however, do not provide for the necessary mixing of the components, their uniform flow to the deposited surface.
Известно устройство ввода ;газа в реакционную камеру, например, ДЛ5| процессов эпитаксии, окислени и диффузии содержащее газовые вводы и распределители потокрв, выполненные в виде колец с отверсти ми, которые произвольно расположены на рабочей стороне 4. В этом устройстве газовый поток на правл етс в камеру параллельными ПУЧками , что также не обеспечивает высокой степени смешивани газовых компонентов и их регулируемую подачу. A known input device; gas into the reaction chamber, for example, DL5 | epitaxy, oxidation and diffusion processes containing gas inlets and flow distributors made in the form of rings with holes that are arbitrarily located on the working side 4. In this device the gas flow is directed into the chamber in parallel BEAMS, which also does not provide a high degree of gas mixing components and their adjustable feed.
.Цель изобретени - повышение степени смешивани и регулировани пода чи потоков..The purpose of the invention is to increase the degree of mixing and control of the flow of flow.
Дл этого предложено кольца распределителей установить концантрично с возможностью перемещени одного относительно другого кольца имеют пр - мЬугольное сечение со скосом внутрен него угла внешнего кольца, отверсти которого выполнены на скосе.For this, it has been proposed to install distributor rings with a constant, with the possibility of moving one relative to another, a rectangular cross section with a bevel of the inner corner of the outer ring, the holes of which are made on the bevel.
Скос выполнен/под углом 40-45 к общей оси колец. . .The bevel is made / at an angle of 40-45 to the common axis of the rings. . .
Нафиг, .1 изображено устройство, общий вид,- на фиг. 2 - то же, поперечный разрез; на фиг. 3 - вид по стрелке/А нафиг. 1. ,Fig, .1 shows the device, a general view, - in FIG. 2 - the same, cross section; in fig. 3 - view along the arrow / A nafig. one. ,
Устроййтво включает в себ средст ва дл подачи газов - газовые ввсды, и 2, соединенные с распределител ми потоков газа 3 и 4 в камеру . Распределители 3 и 4 выполнены в виде колец 5 и б с Отверсти ми дл впуска Газов в-камеру. Кольца распределителей установлены концентрично с возможностью перемещени одного относительно другбго и имеют пр моугольное сечение со скосом 7 внутреннего угла внешнего кольца, отверсти которого выполнены на скосе. Скос расположен под углом 40-45 к общей оси колец (фиг.З) Один из газовых компонентов поЯают через распределитель 4, а другой через распределитель 3. Получаемый га зовый поток, образуют два противолежащих телесных угла (см,фиг.2), что обеспечивает интенсивное и равномерное смешиванИе газовых компонентов. Перемещением распределител 4 вдоль оси относительно распределител 3 обеспечиваетс смешивание газовых ком понентов непосредственно в зоне осаж дени и регулировка рассто ни точки смешивани от обрабатываемой поверхности . Устройство может быть использован в процессах, где требуетс высока степень, смешивани компонентов и однородности состава вблизи обрабатываемой поверхности, В качестве примера рассмотрим осс1ждение слоев двуокиси кремни путем окислени .моносилана водородов в среде азота. Компоненты подают по распределител м 3 и 4 при расходе (л/мин): моносилана 1,2; кислорода 0,61; газоносител 10 Смешанный поток газа поступает к под ложкам, нагретым до 420с в зоне оса дени . Полученные слои двуокиси крем ни толщиной О,.4 мкм при скорости их осаждени 0,08 мкм/мил. Разброс по то7пдине в партии составл ет10%. Таким образом, устройство.обеспечивает равномерную и регулируемую поThe device includes a means for supplying gases — gas inlets, and 2 — connected to gas distribution valves 3 and 4 into the chamber. Distributors 3 and 4 are made in the form of rings 5 and b with holes for the intake of gases into the chamber. The distributor rings are mounted concentrically with the possibility of moving one relative to each other and have a rectangular cross section with a bevel 7 of the inner corner of the outer ring, the openings of which are made on the bevel. The bevel is at an angle of 40-45 to the common axis of the rings (Fig. 3). One of the gas components appears through the distributor 4 and the other through the distributor 3. The resulting gas flow forms two opposite solid angles (see, figure 2), which provides intensive and uniform mixing of gas components. By moving the distributor 4 along the axis relative to the distributor 3, the gas components are mixed directly in the deposition zone and the distance of the mixing point from the treated surface is adjusted. The device can be used in processes that require a high degree of mixing of components and composition homogeneity near the surface to be treated. As an example, consider the precipitation of silicon dioxide layers by oxidizing hydrogen monosilane in a nitrogen atmosphere. Components served on the distributor m 3 and 4 at the flow rate (l / min): monosilane 1,2; oxygen 0.61; gas carrier 10 The mixed stream of gas flows to the substrates heated to 420 s in the sedimentation zone. The resulting layers of creme dioxide are neither thick, ~ 4 microns thick, or their deposition rate is 0.08 micron / mil. The scatter in the batch is 10%. Thus, the device. Provides uniform and adjustable
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU742054359A SU598630A1 (en) | 1974-08-15 | 1974-08-15 | Device for introducing into reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU742054359A SU598630A1 (en) | 1974-08-15 | 1974-08-15 | Device for introducing into reaction chamber |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU772501175A Addition SU638452A2 (en) | 1977-06-30 | 1977-06-30 | Arrangement for uniform load-relieving of long article |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU598630A1 true SU598630A1 (en) | 1978-02-21 |
Family
ID=20436206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU742054359A SU598630A1 (en) | 1974-08-15 | 1974-08-15 | Device for introducing into reaction chamber |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU598630A1 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4928626A (en) * | 1989-05-19 | 1990-05-29 | Applied Materials, Inc. | Reactant gas injection for IC processing |
| US5010842A (en) * | 1988-10-25 | 1991-04-30 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming thin film |
| US5160543A (en) * | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
| WO1997015698A1 (en) * | 1995-10-23 | 1997-05-01 | Watkins-Johnson Company | Gas injection system for semiconductor processing |
| US6090210A (en) * | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
| US7494560B2 (en) * | 2002-11-27 | 2009-02-24 | International Business Machines Corporation | Non-plasma reaction apparatus and method |
| US7647886B2 (en) | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
| US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
| US7771537B2 (en) | 2003-12-10 | 2010-08-10 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition |
| US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
| US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
-
1974
- 1974-08-15 SU SU742054359A patent/SU598630A1/en active
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5160543A (en) * | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
| US5010842A (en) * | 1988-10-25 | 1991-04-30 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming thin film |
| US4928626A (en) * | 1989-05-19 | 1990-05-29 | Applied Materials, Inc. | Reactant gas injection for IC processing |
| WO1997015698A1 (en) * | 1995-10-23 | 1997-05-01 | Watkins-Johnson Company | Gas injection system for semiconductor processing |
| US5851294A (en) * | 1995-10-23 | 1998-12-22 | Watkins-Johnson Company | Gas injection system for semiconductor processing |
| CN1115425C (en) * | 1995-10-23 | 2003-07-23 | 应用材料公司 | Gas injection system for semiconductor processing |
| US6090210A (en) * | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
| US7494560B2 (en) * | 2002-11-27 | 2009-02-24 | International Business Machines Corporation | Non-plasma reaction apparatus and method |
| US7647886B2 (en) | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
| US7771537B2 (en) | 2003-12-10 | 2010-08-10 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition |
| US8518184B2 (en) | 2003-12-10 | 2013-08-27 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD deposition |
| US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
| US8384192B2 (en) | 2004-01-28 | 2013-02-26 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
| US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
| US9023436B2 (en) | 2004-05-06 | 2015-05-05 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
| US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
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