SU1702831A1 - Avalanche optical detector - Google Patents

Avalanche optical detector

Info

Publication number
SU1702831A1
SU1702831A1 SU4747595/25A SU4747595A SU1702831A1 SU 1702831 A1 SU1702831 A1 SU 1702831A1 SU 4747595/25 A SU4747595/25 A SU 4747595/25A SU 4747595 A SU4747595 A SU 4747595A SU 1702831 A1 SU1702831 A1 SU 1702831A1
Authority
SU
USSR - Soviet Union
Prior art keywords
buffer
substrate
semiconductor
regions
buffer layer
Prior art date
Application number
SU4747595/25A
Other languages
Russian (ru)
Inventor
А.Г. Гасанов
В.М. Головин
З.Я. Садыгов
Н.Ю. Юсипов
Original Assignee
Институт ядерных исследований АН СССР
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт ядерных исследований АН СССР filed Critical Институт ядерных исследований АН СССР
Priority to SU4747595/25A priority Critical patent/SU1702831A1/en
Application granted granted Critical
Publication of SU1702831A1 publication Critical patent/SU1702831A1/en

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Light Receiving Elements (AREA)

Abstract

FIELD: semiconductor optical detectors. SUBSTANCE: avalanche optical detector contains semiconductor substrate, at least two semiconductor regions with conduction type opposite to that of substrate, buffer layer, and field electrode. Semiconductor regions are separated from field electrode by buffer regions located in buffer layer. In this case, the following condition is observed: σ+σ<σ+σwhere σand σare conductivities of depleted layer on substrate/ semiconductor region and substrate/buffer layer interfaces, respectively, and σand σare conductivities of buffer regions and buffer layer, respectively. Distance between the semiconductor regions is no less than thickness of buffer layer but no greater than double sum of maximal thickness of depleted layer upon avalanche breakage and diffusion length of secondary charge carrier in the substrate. Use of buffer regions increases operation stability, because final resistance of buffer region restricts sharp course of avalanche process. EFFECT: improved stability and increased signal to noise relation. 1 dwg
SU4747595/25A 1989-10-11 1989-10-11 Avalanche optical detector SU1702831A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU4747595/25A SU1702831A1 (en) 1989-10-11 1989-10-11 Avalanche optical detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU4747595/25A SU1702831A1 (en) 1989-10-11 1989-10-11 Avalanche optical detector

Publications (1)

Publication Number Publication Date
SU1702831A1 true SU1702831A1 (en) 1997-06-27

Family

ID=60532235

Family Applications (1)

Application Number Title Priority Date Filing Date
SU4747595/25A SU1702831A1 (en) 1989-10-11 1989-10-11 Avalanche optical detector

Country Status (1)

Country Link
SU (1) SU1702831A1 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5844291A (en) * 1996-12-20 1998-12-01 Board Of Regents, The University Of Texas System Wide wavelength range high efficiency avalanche light detector with negative feedback
US5880490A (en) * 1997-07-28 1999-03-09 Board Of Regents, The University Of Texas System Semiconductor radiation detectors with intrinsic avalanche multiplication in self-limiting mode of operation
WO2000017940A1 (en) * 1998-09-18 2000-03-30 Viktor Mikhailovich Golovin Avalanche photodetector
US6885827B2 (en) 2002-07-30 2005-04-26 Amplification Technologies, Inc. High sensitivity, high resolution detection of signals
WO2007139451A1 (en) 2006-06-01 2007-12-06 Zecotek Medical Systems Singapore Pte. Ltd. Microchannel avalanche photodiode
WO2007145546A1 (en) * 2006-06-08 2007-12-21 Bronya Tsoi Photoconverter
RU2528107C1 (en) * 2013-04-16 2014-09-10 Зираддин Ягуб оглы Садыгов Semiconductor avalanche detector
RU2770147C1 (en) * 2021-06-21 2022-04-14 Садыгов Зираддин Ягуб оглы Micropixel avalanche photodiode

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5844291A (en) * 1996-12-20 1998-12-01 Board Of Regents, The University Of Texas System Wide wavelength range high efficiency avalanche light detector with negative feedback
US6353238B2 (en) 1996-12-20 2002-03-05 Board Of Regents, The University Of Texas System Method of using a wide wavelength range high efficiency avalanche light detector with negative feedback
US5880490A (en) * 1997-07-28 1999-03-09 Board Of Regents, The University Of Texas System Semiconductor radiation detectors with intrinsic avalanche multiplication in self-limiting mode of operation
WO2000017940A1 (en) * 1998-09-18 2000-03-30 Viktor Mikhailovich Golovin Avalanche photodetector
US6885827B2 (en) 2002-07-30 2005-04-26 Amplification Technologies, Inc. High sensitivity, high resolution detection of signals
US7085502B2 (en) 2002-07-30 2006-08-01 Amplification Technologies, Inc. High sensitivity, high resolution detection of signals
WO2007139451A1 (en) 2006-06-01 2007-12-06 Zecotek Medical Systems Singapore Pte. Ltd. Microchannel avalanche photodiode
WO2007145546A1 (en) * 2006-06-08 2007-12-21 Bronya Tsoi Photoconverter
EA013788B1 (en) * 2006-06-08 2010-06-30 ЦОЙ, Броня Photoconverter
RU2528107C1 (en) * 2013-04-16 2014-09-10 Зираддин Ягуб оглы Садыгов Semiconductor avalanche detector
RU2770147C1 (en) * 2021-06-21 2022-04-14 Садыгов Зираддин Ягуб оглы Micropixel avalanche photodiode

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