SU1282767A1 - A METHOD OF CREATING A SUBSTANTIAL DIELECTRIC - Google Patents
A METHOD OF CREATING A SUBSTANTIAL DIELECTRICInfo
- Publication number
- SU1282767A1 SU1282767A1 SU3786841/25A SU3786841A SU1282767A1 SU 1282767 A1 SU1282767 A1 SU 1282767A1 SU 3786841/25 A SU3786841/25 A SU 3786841/25A SU 3786841 A SU3786841 A SU 3786841A SU 1282767 A1 SU1282767 A1 SU 1282767A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- hcl
- creating
- oxidation
- oxygen
- volume
- Prior art date
Links
Abstract
Способ создания подзатворного диэлектрика, включающий нагрев кремниевых пластин от контактной температуры до температуры окисления, формирование подслоя двуокиси кремния толщиной (7-12) нм термическим окислением пластин кремния при 900-1100°С и доокисления в атмосфере Ar-O-HCl, содержащей (10-50) об.% кислорода при соотношении расходуемых объемов HCl/O= 0,01-0,04, отличающийся тем, что, с целью повышения процента выхода годных приборов за счет повышения качества подзатворного диэлектрика, подслой двуокиси кремния формируют в атмосфере Ar-O-HCl, содержащей (10-50) об.% кислорода и HCl не более 0,6 об.%.A method of creating a gate dielectric, including heating silicon wafers from contact temperature to oxidation temperature, forming a silica sublayer with a thickness of (7-12) nm by thermal oxidation of silicon plates at 900-1100 ° С and additional oxidation in Ar-O-HCl containing (10 -50) vol.% Of oxygen with a ratio of consumable volumes of HCl / O = 0.01-0.04, characterized in that, in order to increase the percentage of yield of devices by improving the quality of the gate dielectric, the silica sublayer is formed in the atmosphere of Ar- O-HCl containing (10- 50)% by volume of oxygen and HCl not more than 0.6% by volume.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU3786841/25A SU1282767A1 (en) | 1984-09-08 | 1984-09-08 | A METHOD OF CREATING A SUBSTANTIAL DIELECTRIC |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU3786841/25A SU1282767A1 (en) | 1984-09-08 | 1984-09-08 | A METHOD OF CREATING A SUBSTANTIAL DIELECTRIC |
Publications (1)
Publication Number | Publication Date |
---|---|
SU1282767A1 true SU1282767A1 (en) | 2012-06-20 |
Family
ID=60519293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU3786841/25A SU1282767A1 (en) | 1984-09-08 | 1984-09-08 | A METHOD OF CREATING A SUBSTANTIAL DIELECTRIC |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU1282767A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2654960C1 (en) * | 2017-04-26 | 2018-05-23 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" | Method for making semiconductor device |
-
1984
- 1984-09-08 SU SU3786841/25A patent/SU1282767A1/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2654960C1 (en) * | 2017-04-26 | 2018-05-23 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" | Method for making semiconductor device |
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