SU1282767A1 - A METHOD OF CREATING A SUBSTANTIAL DIELECTRIC - Google Patents

A METHOD OF CREATING A SUBSTANTIAL DIELECTRIC

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Publication number
SU1282767A1
SU1282767A1 SU3786841/25A SU3786841A SU1282767A1 SU 1282767 A1 SU1282767 A1 SU 1282767A1 SU 3786841/25 A SU3786841/25 A SU 3786841/25A SU 3786841 A SU3786841 A SU 3786841A SU 1282767 A1 SU1282767 A1 SU 1282767A1
Authority
SU
USSR - Soviet Union
Prior art keywords
hcl
creating
oxidation
oxygen
volume
Prior art date
Application number
SU3786841/25A
Other languages
Russian (ru)
Inventor
Н.В. Румак
В.В. Хатько
В.Н. Плотников
В.Е. Ясников
Original Assignee
Физико-технический институт АН БССР
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Физико-технический институт АН БССР filed Critical Физико-технический институт АН БССР
Priority to SU3786841/25A priority Critical patent/SU1282767A1/en
Application granted granted Critical
Publication of SU1282767A1 publication Critical patent/SU1282767A1/en

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Abstract

Способ создания подзатворного диэлектрика, включающий нагрев кремниевых пластин от контактной температуры до температуры окисления, формирование подслоя двуокиси кремния толщиной (7-12) нм термическим окислением пластин кремния при 900-1100°С и доокисления в атмосфере Ar-O-HCl, содержащей (10-50) об.% кислорода при соотношении расходуемых объемов HCl/O= 0,01-0,04, отличающийся тем, что, с целью повышения процента выхода годных приборов за счет повышения качества подзатворного диэлектрика, подслой двуокиси кремния формируют в атмосфере Ar-O-HCl, содержащей (10-50) об.% кислорода и HCl не более 0,6 об.%.A method of creating a gate dielectric, including heating silicon wafers from contact temperature to oxidation temperature, forming a silica sublayer with a thickness of (7-12) nm by thermal oxidation of silicon plates at 900-1100 ° С and additional oxidation in Ar-O-HCl containing (10 -50) vol.% Of oxygen with a ratio of consumable volumes of HCl / O = 0.01-0.04, characterized in that, in order to increase the percentage of yield of devices by improving the quality of the gate dielectric, the silica sublayer is formed in the atmosphere of Ar- O-HCl containing (10- 50)% by volume of oxygen and HCl not more than 0.6% by volume.

SU3786841/25A 1984-09-08 1984-09-08 A METHOD OF CREATING A SUBSTANTIAL DIELECTRIC SU1282767A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU3786841/25A SU1282767A1 (en) 1984-09-08 1984-09-08 A METHOD OF CREATING A SUBSTANTIAL DIELECTRIC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU3786841/25A SU1282767A1 (en) 1984-09-08 1984-09-08 A METHOD OF CREATING A SUBSTANTIAL DIELECTRIC

Publications (1)

Publication Number Publication Date
SU1282767A1 true SU1282767A1 (en) 2012-06-20

Family

ID=60519293

Family Applications (1)

Application Number Title Priority Date Filing Date
SU3786841/25A SU1282767A1 (en) 1984-09-08 1984-09-08 A METHOD OF CREATING A SUBSTANTIAL DIELECTRIC

Country Status (1)

Country Link
SU (1) SU1282767A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2654960C1 (en) * 2017-04-26 2018-05-23 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Method for making semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2654960C1 (en) * 2017-04-26 2018-05-23 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Method for making semiconductor device

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