SG98451A1 - Method and system for microwave excitation of plasma in an ion beam guide - Google Patents

Method and system for microwave excitation of plasma in an ion beam guide

Info

Publication number
SG98451A1
SG98451A1 SG200104481A SG200104481A SG98451A1 SG 98451 A1 SG98451 A1 SG 98451A1 SG 200104481 A SG200104481 A SG 200104481A SG 200104481 A SG200104481 A SG 200104481A SG 98451 A1 SG98451 A1 SG 98451A1
Authority
SG
Singapore
Prior art keywords
plasma
ion beam
beam guide
microwave excitation
microwave
Prior art date
Application number
SG200104481A
Other languages
English (en)
Inventor
Maurice Benveniste Victor
Frank Divergilio William
Sinclair Frank
Original Assignee
Axcelis Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc filed Critical Axcelis Tech Inc
Publication of SG98451A1 publication Critical patent/SG98451A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Tubes For Measurement (AREA)
  • Plasma Technology (AREA)
SG200104481A 2000-07-25 2001-07-24 Method and system for microwave excitation of plasma in an ion beam guide SG98451A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/625,153 US6414329B1 (en) 2000-07-25 2000-07-25 Method and system for microwave excitation of plasma in an ion beam guide

Publications (1)

Publication Number Publication Date
SG98451A1 true SG98451A1 (en) 2003-09-19

Family

ID=24504820

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200104481A SG98451A1 (en) 2000-07-25 2001-07-24 Method and system for microwave excitation of plasma in an ion beam guide

Country Status (7)

Country Link
US (2) US6414329B1 (de)
EP (1) EP1176624B1 (de)
JP (1) JP5057196B2 (de)
KR (1) KR100615533B1 (de)
DE (1) DE60130945T2 (de)
SG (1) SG98451A1 (de)
TW (1) TW511114B (de)

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US6593570B2 (en) * 2000-05-24 2003-07-15 Agilent Technologies, Inc. Ion optic components for mass spectrometers
US6885014B2 (en) 2002-05-01 2005-04-26 Axcelis Technologies, Inc. Symmetric beamline and methods for generating a mass-analyzed ribbon ion beam
US6541781B1 (en) * 2000-07-25 2003-04-01 Axcelis Technologies, Inc. Waveguide for microwave excitation of plasma in an ion beam guide
US6414329B1 (en) * 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide
US6703628B2 (en) 2000-07-25 2004-03-09 Axceliss Technologies, Inc Method and system for ion beam containment in an ion beam guide
JP3869680B2 (ja) * 2001-05-29 2007-01-17 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオン注入装置
JP3840108B2 (ja) * 2001-12-27 2006-11-01 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオンビーム処理方法及び処理装置
JP2004265616A (ja) * 2003-02-05 2004-09-24 Matsushita Electric Ind Co Ltd マイクロ波加熱装置
US20040227106A1 (en) * 2003-05-13 2004-11-18 Halling Alfred M. System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway
US6881966B2 (en) * 2003-05-15 2005-04-19 Axcelis Technologies, Inc. Hybrid magnetic/electrostatic deflector for ion implantation systems
US6879109B2 (en) * 2003-05-15 2005-04-12 Axcelis Technologies, Inc. Thin magnetron structures for plasma generation in ion implantation systems
US6891174B2 (en) * 2003-07-31 2005-05-10 Axcelis Technologies, Inc. Method and system for ion beam containment using photoelectrons in an ion beam guide
US7087913B2 (en) * 2003-10-17 2006-08-08 Applied Materials, Inc. Ion implanter electrodes
US7402816B2 (en) * 2004-11-19 2008-07-22 Varian Semiconductor Equipment Associates, Inc. Electron injection in ion implanter magnets
US7459692B2 (en) * 2004-11-19 2008-12-02 Varian Semiconductor Equipment Associates, Inc. Electron confinement inside magnet of ion implanter
US20070045111A1 (en) * 2004-12-24 2007-03-01 Alfred Trusch Plasma excitation system
CA2600421C (en) * 2005-03-07 2016-05-03 The Regents Of The University Of California Plasma electric generation system
ATE537550T1 (de) 2005-07-08 2011-12-15 Nexgen Semi Holding Inc Vorrichtung und verfahren zur kontrollierten fertigung von halbleitern mittels teilchenstrahlen
US7498572B2 (en) * 2005-09-14 2009-03-03 Nissin Ion Equipment Co., Ltd. Deflecting electromagnet and ion beam irradiating apparatus
TWI435378B (zh) * 2006-04-26 2014-04-21 Axcelis Tech Inc 劑量均勻性校正方法
US7615763B2 (en) * 2006-09-19 2009-11-10 Axcelis Technologies, Inc. System for magnetic scanning and correction of an ion beam
US7507978B2 (en) * 2006-09-29 2009-03-24 Axcelis Technologies, Inc. Beam line architecture for ion implanter
WO2008140585A1 (en) 2006-11-22 2008-11-20 Nexgen Semi Holding, Inc. Apparatus and method for conformal mask manufacturing
US7888652B2 (en) * 2006-11-27 2011-02-15 Nissin Ion Equipment Co., Ltd. Ion implantation apparatus
US7655922B2 (en) * 2006-12-07 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for confining electrons in an ion implanter
US7750320B2 (en) * 2006-12-22 2010-07-06 Axcelis Technologies, Inc. System and method for two-dimensional beam scan across a workpiece of an ion implanter
US7994488B2 (en) * 2008-04-24 2011-08-09 Axcelis Technologies, Inc. Low contamination, low energy beamline architecture for high current ion implantation
US9236235B2 (en) 2008-05-30 2016-01-12 Agilent Technologies, Inc. Curved ion guide and related methods
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US20100065761A1 (en) * 2008-09-17 2010-03-18 Axcelis Technologies, Inc. Adjustable deflection optics for ion implantation
US8237135B2 (en) * 2009-01-22 2012-08-07 Axcelis Technologies, Inc. Enhanced low energy ion beam transport in ion implantation
US8084750B2 (en) * 2009-05-28 2011-12-27 Agilent Technologies, Inc. Curved ion guide with varying ion deflecting field and related methods
TW201205649A (en) * 2010-07-28 2012-02-01 Kingstone Semiconductor Co Ltd Beam current transmission system and method
JP6253362B2 (ja) * 2013-11-21 2017-12-27 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置、ビーム電流調整装置、及びビーム電流調整方法
US9218941B2 (en) * 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
JP6207418B2 (ja) * 2014-02-10 2017-10-04 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置、ビーム平行化器、及びビーム平行化方法
CN111146070B (zh) * 2019-12-25 2023-06-16 兰州空间技术物理研究所 一种小型高性能空间探测质谱计

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US5350926A (en) * 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
US5703375A (en) * 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization

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US4686365A (en) * 1984-12-24 1987-08-11 American Cyanamid Company Fourier transform ion cyclothon resonance mass spectrometer with spatially separated sources and detector
FR2595868B1 (fr) * 1986-03-13 1988-05-13 Commissariat Energie Atomique Source d'ions a resonance cyclotronique electronique a injection coaxiale d'ondes electromagnetiques
US5433788A (en) 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
US5206516A (en) 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
US5189446A (en) 1991-05-17 1993-02-23 International Business Machines Corporation Plasma wafer processing tool having closed electron cyclotron resonance
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
FR2718568B1 (fr) * 1994-04-06 1996-07-05 France Telecom Procédé d'implantation haute énergie à partir d'un implanteur de type faible ou moyen courant et dispositifs correspondants.
US5523652A (en) * 1994-09-26 1996-06-04 Eaton Corporation Microwave energized ion source for ion implantation
US5554857A (en) 1995-10-19 1996-09-10 Eaton Corporation Method and apparatus for ion beam formation in an ion implanter
JPH09180662A (ja) 1995-12-27 1997-07-11 Hitachi Ltd イオンビーム装置
JP3284886B2 (ja) * 1996-06-20 2002-05-20 株式会社日立製作所 イオン源及びイオン注入装置
US5707452A (en) * 1996-07-08 1998-01-13 Applied Microwave Plasma Concepts, Inc. Coaxial microwave applicator for an electron cyclotron resonance plasma source
GB9710380D0 (en) * 1997-05-20 1997-07-16 Applied Materials Inc Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation
US6497783B1 (en) * 1997-05-22 2002-12-24 Canon Kabushiki Kaisha Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method
JP3627206B2 (ja) * 1997-11-28 2005-03-09 住友イートンノバ株式会社 イオン注入装置及びイオン注入方法
US6271529B1 (en) * 1997-12-01 2001-08-07 Ebara Corporation Ion implantation with charge neutralization
JPH11214320A (ja) 1998-01-20 1999-08-06 Handotai Process Kenkyusho:Kk 半導体層への不純物領域形成方法及び半導体層への不純物導入装置
JP3608416B2 (ja) * 1999-02-02 2005-01-12 日新電機株式会社 プラズマ源
US6541781B1 (en) * 2000-07-25 2003-04-01 Axcelis Technologies, Inc. Waveguide for microwave excitation of plasma in an ion beam guide
US6414329B1 (en) * 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350926A (en) * 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
US5703375A (en) * 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization

Also Published As

Publication number Publication date
KR100615533B1 (ko) 2006-08-25
JP5057196B2 (ja) 2012-10-24
US20020014587A1 (en) 2002-02-07
US6759665B2 (en) 2004-07-06
EP1176624A2 (de) 2002-01-30
DE60130945D1 (de) 2007-11-29
KR20020009503A (ko) 2002-02-01
DE60130945T2 (de) 2008-07-24
US6414329B1 (en) 2002-07-02
JP2002134049A (ja) 2002-05-10
TW511114B (en) 2002-11-21
EP1176624B1 (de) 2007-10-17
EP1176624A3 (de) 2005-06-15

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