SG93235A1 - Free floating shield and semiconductor processing system - Google Patents

Free floating shield and semiconductor processing system

Info

Publication number
SG93235A1
SG93235A1 SG200001878A SG200001878A SG93235A1 SG 93235 A1 SG93235 A1 SG 93235A1 SG 200001878 A SG200001878 A SG 200001878A SG 200001878 A SG200001878 A SG 200001878A SG 93235 A1 SG93235 A1 SG 93235A1
Authority
SG
Singapore
Prior art keywords
processing system
semiconductor processing
free floating
floating shield
shield
Prior art date
Application number
SG200001878A
Other languages
English (en)
Inventor
Lawrence Duane Bartholomew
Jay Brian Dedontney
Christopher A Peabody
Original Assignee
Silicon Valley Group Thermal
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Valley Group Thermal filed Critical Silicon Valley Group Thermal
Publication of SG93235A1 publication Critical patent/SG93235A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
SG200001878A 2000-01-27 2000-03-31 Free floating shield and semiconductor processing system SG93235A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/492,420 US6352592B1 (en) 1998-01-16 2000-01-27 Free floating shield and semiconductor processing system

Publications (1)

Publication Number Publication Date
SG93235A1 true SG93235A1 (en) 2002-12-17

Family

ID=23956178

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200001878A SG93235A1 (en) 2000-01-27 2000-03-31 Free floating shield and semiconductor processing system

Country Status (9)

Country Link
US (1) US6352592B1 (zh)
EP (1) EP1120815A3 (zh)
JP (1) JP2001214273A (zh)
KR (1) KR100338891B1 (zh)
CN (1) CN1127581C (zh)
CA (1) CA2304548A1 (zh)
HK (1) HK1039638A1 (zh)
SG (1) SG93235A1 (zh)
TW (1) TWI223675B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143080A (en) * 1999-02-02 2000-11-07 Silicon Valley Group Thermal Systems Llc Wafer processing reactor having a gas flow control system and method
ATE539179T1 (de) * 1999-05-21 2012-01-15 Aviza Tech Inc Gerät zur schutzgasabschirmung
AU2001283944A1 (en) * 2000-09-22 2002-04-02 Aixtron Ag Gas inlet mechanism for cvd-method and device
JP3522234B2 (ja) * 2001-05-22 2004-04-26 船井電機株式会社 受信装置
US6890386B2 (en) * 2001-07-13 2005-05-10 Aviza Technology, Inc. Modular injector and exhaust assembly
US20030061991A1 (en) * 2001-08-24 2003-04-03 Asml Us, Inc. Protective shield and system for gas distribution
US7027593B2 (en) * 2002-05-22 2006-04-11 Avaya Technology Corp. Apparatus and method for echo control
US20050223983A1 (en) * 2004-04-08 2005-10-13 Venkat Selvamanickam Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US20100015731A1 (en) * 2007-02-20 2010-01-21 Lam Research Corporation Method of low-k dielectric film repair
EP2263974B1 (en) * 2008-04-16 2014-06-18 Zeon Corporation Equipment and method for producing orientated carbon nano-tube aggregates
KR101323231B1 (ko) * 2010-07-30 2013-10-30 (주)에스엔텍 기판이송장치
CN103430285B (zh) * 2011-03-22 2016-06-01 应用材料公司 用于化学气相沉积腔室的衬里组件
JP6306411B2 (ja) * 2014-04-17 2018-04-04 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US11266959B2 (en) * 2014-10-08 2022-03-08 Versum Materials Us, Llc Low pressure fluctuation apparatuses for blending fluids, and methods of using the same
DE102016100625A1 (de) * 2016-01-15 2017-07-20 Aixtron Se Vorrichtung zum Bereitstellen eines Prozessgases in einer Beschichtungseinrichtung
JP6667797B2 (ja) * 2016-11-16 2020-03-18 日本電気硝子株式会社 ガラス基板の製造方法
WO2018216440A1 (ja) * 2017-05-26 2018-11-29 住友電気工業株式会社 Ｉｉｉ－ｖ族化合物半導体基板およびエピタキシャル層付ｉｉｉ－ｖ族化合物半導体基板
CN112663027B (zh) * 2020-12-02 2023-04-25 鑫天虹(厦门)科技有限公司 可减少前驱物沉积的原子层沉积设备与制程方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4834020A (en) * 1987-12-04 1989-05-30 Watkins-Johnson Company Atmospheric pressure chemical vapor deposition apparatus
US5487784A (en) * 1991-10-29 1996-01-30 Ellis, Jr.; Frank B. Formation of tin oxide films on glass substrates
US5849088A (en) * 1998-01-16 1998-12-15 Watkins-Johnson Company Free floating shield

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5851293A (en) 1996-03-29 1998-12-22 Atmi Ecosys Corporation Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations
US5944900A (en) 1997-02-13 1999-08-31 Watkins Johnson Company Protective gas shield for chemical vapor deposition apparatus
US5855957A (en) * 1997-02-18 1999-01-05 Watkins-Johnson Company Optimization of SiO2 film conformality in atmospheric pressure chemical vapor deposition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4834020A (en) * 1987-12-04 1989-05-30 Watkins-Johnson Company Atmospheric pressure chemical vapor deposition apparatus
US5487784A (en) * 1991-10-29 1996-01-30 Ellis, Jr.; Frank B. Formation of tin oxide films on glass substrates
US5849088A (en) * 1998-01-16 1998-12-15 Watkins-Johnson Company Free floating shield

Also Published As

Publication number Publication date
TWI223675B (en) 2004-11-11
EP1120815A3 (en) 2004-09-01
JP2001214273A (ja) 2001-08-07
US6352592B1 (en) 2002-03-05
CA2304548A1 (en) 2001-07-27
KR100338891B1 (ko) 2002-05-30
EP1120815A2 (en) 2001-08-01
KR20010082499A (ko) 2001-08-30
HK1039638A1 (zh) 2002-05-03
CN1127581C (zh) 2003-11-12
CN1319682A (zh) 2001-10-31

Similar Documents

Publication Publication Date Title
AU1625599A (en) Free floating shield and semiconductor processing system
SG93235A1 (en) Free floating shield and semiconductor processing system
SG87041A1 (en) Semiconductor integrated circuit and data processing system
EP1033750A4 (en) VACUUM TREATMENT DEVICE
GB2364816B (en) Electronic processing system
GB0003571D0 (en) Signal processing technique
DE60022860D1 (de) Waferbearbeitungssystem
GB2363905B (en) Floating gate semiconductor device
SG105523A1 (en) Substrate processing system and substrate processing method
GB9823819D0 (en) Processing arrangements
IL137315A0 (en) Free floating shield and semiconductor processing system
EP1130639A4 (en) SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
SG93901A1 (en) Substrate processing system and substrate processing method
SG98005A1 (en) Semiconductor device and process therefor
GB2351166B (en) Interrupt processing device
IL142308A0 (en) Detection processing system
GB0104351D0 (en) Signal processing arrangements
GB0014981D0 (en) Processing an object
GB2366426B (en) Coprocessor data processing system
DE69902070D1 (de) Unterbrechungsverarbeitung
DE59909953D1 (de) Bearbeitungseinrichtung
GB0022949D0 (en) Processing instruction words
SG72934A1 (en) Semiconductor device and production thereof
GB2364575B (en) Processing an object
HK1009917A1 (en) Ic leadframe processing system ic