HK1039638A1 - 自由浮動屏障與半導體工藝系統 - Google Patents

自由浮動屏障與半導體工藝系統

Info

Publication number
HK1039638A1
HK1039638A1 HK02101266.3A HK02101266A HK1039638A1 HK 1039638 A1 HK1039638 A1 HK 1039638A1 HK 02101266 A HK02101266 A HK 02101266A HK 1039638 A1 HK1039638 A1 HK 1039638A1
Authority
HK
Hong Kong
Prior art keywords
processing system
semiconductor processing
free floating
floating shield
shield
Prior art date
Application number
HK02101266.3A
Other languages
English (en)
Inventor
勞倫斯‧杜安‧巴塞洛繆
杰伊‧布萊恩‧德杜特尼爾
克裏斯托弗‧A‧皮博迪
Original Assignee
硅谷集團熱系統責任有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 硅谷集團熱系統責任有限公司 filed Critical 硅谷集團熱系統責任有限公司
Publication of HK1039638A1 publication Critical patent/HK1039638A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
HK02101266.3A 2000-01-27 2002-02-21 自由浮動屏障與半導體工藝系統 HK1039638A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/492,420 US6352592B1 (en) 1998-01-16 2000-01-27 Free floating shield and semiconductor processing system

Publications (1)

Publication Number Publication Date
HK1039638A1 true HK1039638A1 (zh) 2002-05-03

Family

ID=23956178

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02101266.3A HK1039638A1 (zh) 2000-01-27 2002-02-21 自由浮動屏障與半導體工藝系統

Country Status (9)

Country Link
US (1) US6352592B1 (zh)
EP (1) EP1120815A3 (zh)
JP (1) JP2001214273A (zh)
KR (1) KR100338891B1 (zh)
CN (1) CN1127581C (zh)
CA (1) CA2304548A1 (zh)
HK (1) HK1039638A1 (zh)
SG (1) SG93235A1 (zh)
TW (1) TWI223675B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143080A (en) * 1999-02-02 2000-11-07 Silicon Valley Group Thermal Systems Llc Wafer processing reactor having a gas flow control system and method
TW530097B (en) * 1999-05-21 2003-05-01 Silicon Valley Group Thermal Protective gas shield apparatus
EP1322801B1 (de) * 2000-09-22 2010-01-06 Aixtron Ag Cvd-verfahren und gaseinlassorgan zur durchführung des verfahrens
JP3522234B2 (ja) * 2001-05-22 2004-04-26 船井電機株式会社 受信装置
TW548724B (en) * 2001-07-13 2003-08-21 Asml Us Inc Modular injector and exhaust assembly
TWI287587B (en) * 2001-08-24 2007-10-01 Asml Us Inc Protective shield and system for gas distribution
US7027593B2 (en) * 2002-05-22 2006-04-11 Avaya Technology Corp. Apparatus and method for echo control
US20050223983A1 (en) * 2004-04-08 2005-10-13 Venkat Selvamanickam Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US20100015731A1 (en) * 2007-02-20 2010-01-21 Lam Research Corporation Method of low-k dielectric film repair
EP2263974B1 (en) * 2008-04-16 2014-06-18 Zeon Corporation Equipment and method for producing orientated carbon nano-tube aggregates
KR101323231B1 (ko) * 2010-07-30 2013-10-30 (주)에스엔텍 기판이송장치
CN103430285B (zh) * 2011-03-22 2016-06-01 应用材料公司 用于化学气相沉积腔室的衬里组件
JP6306411B2 (ja) * 2014-04-17 2018-04-04 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
KR102013906B1 (ko) * 2014-10-08 2019-08-23 버슘머트리얼즈 유에스, 엘엘씨 저압 요동 유동 제어 장치 및 방법
DE102016100625A1 (de) * 2016-01-15 2017-07-20 Aixtron Se Vorrichtung zum Bereitstellen eines Prozessgases in einer Beschichtungseinrichtung
JP6667797B2 (ja) * 2016-11-16 2020-03-18 日本電気硝子株式会社 ガラス基板の製造方法
CN112838122A (zh) * 2017-05-26 2021-05-25 住友电气工业株式会社 Iii-v族化合物半导体基板和带有外延层的iii-v族化合物半导体基板
CN112663027B (zh) * 2020-12-02 2023-04-25 鑫天虹(厦门)科技有限公司 可减少前驱物沉积的原子层沉积设备与制程方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4834020A (en) 1987-12-04 1989-05-30 Watkins-Johnson Company Atmospheric pressure chemical vapor deposition apparatus
US5393563A (en) 1991-10-29 1995-02-28 Ellis, Jr.; Frank B. Formation of tin oxide films on glass substrates
US5851293A (en) 1996-03-29 1998-12-22 Atmi Ecosys Corporation Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations
US5944900A (en) 1997-02-13 1999-08-31 Watkins Johnson Company Protective gas shield for chemical vapor deposition apparatus
US5855957A (en) * 1997-02-18 1999-01-05 Watkins-Johnson Company Optimization of SiO2 film conformality in atmospheric pressure chemical vapor deposition
US5849088A (en) 1998-01-16 1998-12-15 Watkins-Johnson Company Free floating shield

Also Published As

Publication number Publication date
TWI223675B (en) 2004-11-11
KR20010082499A (ko) 2001-08-30
EP1120815A3 (en) 2004-09-01
EP1120815A2 (en) 2001-08-01
US6352592B1 (en) 2002-03-05
CN1127581C (zh) 2003-11-12
JP2001214273A (ja) 2001-08-07
SG93235A1 (en) 2002-12-17
CN1319682A (zh) 2001-10-31
KR100338891B1 (ko) 2002-05-30
CA2304548A1 (en) 2001-07-27

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