SG88808A1 - Quartz insulator for ion implanter beamline components - Google Patents

Quartz insulator for ion implanter beamline components

Info

Publication number
SG88808A1
SG88808A1 SG200007535A SG200007535A SG88808A1 SG 88808 A1 SG88808 A1 SG 88808A1 SG 200007535 A SG200007535 A SG 200007535A SG 200007535 A SG200007535 A SG 200007535A SG 88808 A1 SG88808 A1 SG 88808A1
Authority
SG
Singapore
Prior art keywords
ion implanter
beamline components
quartz insulator
implanter beamline
quartz
Prior art date
Application number
SG200007535A
Other languages
English (en)
Inventor
Saadatmand Kourosh
Richard Swenson David
Frank Divergilio William
Michael Quinn Stephen
Wan Zhimin
Maurice Benveniste Victor
Original Assignee
Axcelis Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc filed Critical Axcelis Tech Inc
Publication of SG88808A1 publication Critical patent/SG88808A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/038—Insulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H01J2237/04735—Changing particle velocity accelerating with electrostatic means
    • H01J2237/04737—Changing particle velocity accelerating with electrostatic means radio-frequency quadrupole [RFQ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
SG200007535A 1999-12-21 2000-12-20 Quartz insulator for ion implanter beamline components SG88808A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/469,068 US6291828B1 (en) 1999-12-21 1999-12-21 Glass-like insulator for electrically isolating electrodes from ion implanter housing

Publications (1)

Publication Number Publication Date
SG88808A1 true SG88808A1 (en) 2002-05-21

Family

ID=23862290

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200007535A SG88808A1 (en) 1999-12-21 2000-12-20 Quartz insulator for ion implanter beamline components

Country Status (6)

Country Link
US (1) US6291828B1 (sh)
EP (1) EP1111652A1 (sh)
JP (1) JP2001222970A (sh)
KR (1) KR100580749B1 (sh)
SG (1) SG88808A1 (sh)
TW (1) TW525203B (sh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6630677B1 (en) * 2001-08-29 2003-10-07 Advanced Micro Devices, Inc. Electrostatic lens having glassy graphite electrodes
US6949895B2 (en) * 2003-09-03 2005-09-27 Axcelis Technologies, Inc. Unipolar electrostatic quadrupole lens and switching methods for charged beam transport
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
JP6831245B2 (ja) * 2017-01-06 2021-02-17 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
CN109256314B (zh) * 2018-10-11 2020-08-28 中国电子科技集团公司第四十八研究所 一种基片的定点离子注入装置及注入方法
CN109767969A (zh) * 2019-03-08 2019-05-17 无锡诚承电子科技有限公司 离子注入机高压绝缘件及制造方法
US11476087B2 (en) * 2020-08-03 2022-10-18 Applied Materials, Inc. Ion implantation system and linear accelerator having novel accelerator stage configuration
US11388810B2 (en) * 2020-09-17 2022-07-12 Applied Materials, Inc. System, apparatus and method for multi-frequency resonator operation in linear accelerator
US11596051B2 (en) * 2020-12-01 2023-02-28 Applied Materials, Inc. Resonator, linear accelerator configuration and ion implantation system having toroidal resonator
US11665810B2 (en) * 2020-12-04 2023-05-30 Applied Materials, Inc. Modular linear accelerator assembly
JP7557397B2 (ja) 2021-03-02 2024-09-27 住友重機械イオンテクノロジー株式会社 イオン注入装置および静電四重極レンズ装置
US11825590B2 (en) * 2021-09-13 2023-11-21 Applied Materials, Inc. Drift tube, apparatus and ion implanter having variable focus electrode in linear accelerator

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801547A (en) * 1987-01-02 1989-01-31 Ramot University Authority For Applied Research And Industrial Development Ltd. Device for detecting presence of micro-organisms in a sample
US4818326A (en) * 1987-07-16 1989-04-04 Texas Instruments Incorporated Processing apparatus
US4831270A (en) * 1987-05-21 1989-05-16 Ion Implant Services Ion implantation apparatus

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
JPS5894745A (ja) * 1981-11-30 1983-06-06 Agency Of Ind Science & Technol 多重極レンズ
US4801847A (en) * 1983-11-28 1989-01-31 Hitachi, Ltd. Charged particle accelerator using quadrupole electrodes
EP0217616A3 (en) * 1985-09-23 1989-01-25 Vg Instruments Group Limited Substrate processing apparatus
DE3688962T2 (de) * 1985-10-04 1993-12-09 Fujitsu Ltd Kühlsystem für eine elektronische Schaltungsanordnung.
US4885500A (en) * 1986-11-19 1989-12-05 Hewlett-Packard Company Quartz quadrupole for mass filter
US5796219A (en) 1988-07-15 1998-08-18 Shimadzu Corp Method and apparatus for controlling the acceleration energy of a radio-frequency multipole linear accelerator
JPH061678B2 (ja) 1988-11-24 1994-01-05 工業技術院長 外部共振回路型ｒｆｑ加速器
GB9110207D0 (en) * 1991-05-10 1991-07-03 Fisons Plc Process for the manufacture of a multipolar elongate-electrode lens or mass filter
JP2863962B2 (ja) * 1992-04-10 1999-03-03 株式会社日立製作所 イオン打ち込み装置
JPH05334979A (ja) * 1992-06-01 1993-12-17 Agency Of Ind Science & Technol 荷電ビーム用レンズ構体
JPH06196296A (ja) * 1992-12-24 1994-07-15 Tokyo Seimitsu Co Ltd 加速管
JPH0773041B2 (ja) * 1993-03-02 1995-08-02 株式会社日立製作所 イオン注入装置
US5693939A (en) 1996-07-03 1997-12-02 Purser; Kenneth H. MeV neutral beam ion implanter
EP0934515B1 (en) * 1996-10-09 2006-03-08 Symyx Technologies, Inc. Infrared spectroscopy and imaging of libraries
JP3402998B2 (ja) * 1997-03-18 2003-05-06 株式会社東芝 荷電ビーム描画装置用静電偏向電極の製造方法
US5780863A (en) * 1997-04-29 1998-07-14 Eaton Corporation Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter
US6023060A (en) * 1998-03-03 2000-02-08 Etec Systems, Inc. T-shaped electron-beam microcolumn as a general purpose scanning electron microscope
US6506287B1 (en) * 1998-03-16 2003-01-14 Applied Materials, Inc. Overlap design of one-turn coil
JPH11288800A (ja) * 1998-04-01 1999-10-19 Nissin High Voltage Co Ltd 加速管

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801547A (en) * 1987-01-02 1989-01-31 Ramot University Authority For Applied Research And Industrial Development Ltd. Device for detecting presence of micro-organisms in a sample
US4831270A (en) * 1987-05-21 1989-05-16 Ion Implant Services Ion implantation apparatus
US4818326A (en) * 1987-07-16 1989-04-04 Texas Instruments Incorporated Processing apparatus

Also Published As

Publication number Publication date
US6291828B1 (en) 2001-09-18
JP2001222970A (ja) 2001-08-17
KR100580749B1 (ko) 2006-05-15
TW525203B (en) 2003-03-21
EP1111652A1 (en) 2001-06-27
KR20010067400A (ko) 2001-07-12

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