SG88732A1 - Ferroelectric capacitor, ferroelectric memory device, and their manufacturing method - Google Patents

Ferroelectric capacitor, ferroelectric memory device, and their manufacturing method

Info

Publication number
SG88732A1
SG88732A1 SG9702649A SG1997002649A SG88732A1 SG 88732 A1 SG88732 A1 SG 88732A1 SG 9702649 A SG9702649 A SG 9702649A SG 1997002649 A SG1997002649 A SG 1997002649A SG 88732 A1 SG88732 A1 SG 88732A1
Authority
SG
Singapore
Prior art keywords
ferroelectric
manufacturing
memory device
capacitor
ferroelectric memory
Prior art date
Application number
SG9702649A
Other languages
English (en)
Inventor
Fukuda Yukio
Aoki Katsuhiro
Numata Ken
Nishimumra Akitoshi
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of SG88732A1 publication Critical patent/SG88732A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
SG9702649A 1996-07-26 1997-07-26 Ferroelectric capacitor, ferroelectric memory device, and their manufacturing method SG88732A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8215467A JPH1050960A (ja) 1996-07-26 1996-07-26 強誘電体キャパシタ及び強誘電体メモリ装置と、これらの製造方法

Publications (1)

Publication Number Publication Date
SG88732A1 true SG88732A1 (en) 2002-05-21

Family

ID=16672866

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9702649A SG88732A1 (en) 1996-07-26 1997-07-26 Ferroelectric capacitor, ferroelectric memory device, and their manufacturing method

Country Status (4)

Country Link
EP (1) EP0821415A3 (de)
JP (1) JPH1050960A (de)
SG (1) SG88732A1 (de)
TW (1) TW440994B (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6287637B1 (en) 1997-07-18 2001-09-11 Ramtron International Corporation Multi-layer approach for optimizing ferroelectric film performance
JP3092659B2 (ja) 1997-12-10 2000-09-25 日本電気株式会社 薄膜キャパシタ及びその製造方法
TW421886B (en) 1998-06-10 2001-02-11 Siemens Ag Memory-capacitor for a DRAM
US6586790B2 (en) 1998-07-24 2003-07-01 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US6358810B1 (en) 1998-07-28 2002-03-19 Applied Materials, Inc. Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes
US6184550B1 (en) 1998-08-28 2001-02-06 Advanced Technology Materials, Inc. Ternary nitride-carbide barrier layers
US6376090B1 (en) 1998-09-25 2002-04-23 Sharp Kabushiki Kaisha Method for manufacturing a substrate with an oxide ferroelectric thin film formed thereon and a substrate with an oxide ferroelectric thin film formed thereon
JP3517876B2 (ja) 1998-10-14 2004-04-12 セイコーエプソン株式会社 強誘電体薄膜素子の製造方法、インクジェット式記録ヘッド及びインクジェットプリンタ
KR100363081B1 (ko) * 1999-09-16 2002-11-30 삼성전자 주식회사 박막 형성장치
US6964873B2 (en) * 1999-10-29 2005-11-15 Fujitsu Limited Semiconductor device having a ferroelectric capacitor and a fabrication process thereof
US6207584B1 (en) * 2000-01-05 2001-03-27 International Business Machines Corp. High dielectric constant material deposition to achieve high capacitance
JP2003519913A (ja) * 2000-01-06 2003-06-24 アプライド マテリアルズ インコーポレイテッド コンデンサ構造のための低熱収支金属酸化物堆積
JP2002170938A (ja) * 2000-04-28 2002-06-14 Sharp Corp 半導体装置およびその製造方法
US6887716B2 (en) * 2000-12-20 2005-05-03 Fujitsu Limited Process for producing high quality PZT films for ferroelectric memory integrated circuits
US6787831B2 (en) 2002-01-15 2004-09-07 Infineon Technologies Aktiengesellschaft Barrier stack with improved barrier properties
JP4530615B2 (ja) * 2002-01-22 2010-08-25 セイコーエプソン株式会社 圧電体素子および液体吐出ヘッド
JP5115910B2 (ja) * 2002-01-22 2013-01-09 セイコーエプソン株式会社 プリンタ
US6534326B1 (en) * 2002-03-13 2003-03-18 Sharp Laboratories Of America, Inc. Method of minimizing leakage current and improving breakdown voltage of polycrystalline memory thin films
KR100611707B1 (ko) * 2002-05-28 2006-08-11 가부시끼가이샤 도시바 반도체 장치 및 그 제조 방법
US7169658B2 (en) * 2004-01-29 2007-01-30 Infineon Technologies Ag Method for formation of an ultra-thin film and semiconductor device containing such a film
JP4782412B2 (ja) * 2004-12-24 2011-09-28 日本碍子株式会社 圧電／電歪体、圧電／電歪積層体、及び圧電／電歪膜型アクチュエータ
JP4782413B2 (ja) * 2004-12-24 2011-09-28 日本碍子株式会社 圧電／電歪体、圧電／電歪積層体、及び圧電／電歪膜型アクチュエータ
JP4536607B2 (ja) * 2005-06-16 2010-09-01 東京エレクトロン株式会社 成膜方法およびコンピュータ記憶媒体
WO2010076733A1 (en) 2008-12-29 2010-07-08 Nxp B.V. Physical structure for use in a physical unclonable function
JP5267225B2 (ja) * 2009-03-09 2013-08-21 Ｔｄｋ株式会社 誘電体素子の製造方法
JP6481153B2 (ja) * 2014-08-14 2019-03-13 アドバンストマテリアルテクノロジーズ株式会社 強誘電体セラミックス及びその製造方法
JP7537093B2 (ja) 2020-02-17 2024-08-21 株式会社リコー アクチュエータ、液体吐出ヘッド、液体吐出装置及びアクチュエータの製造方法
JP2022057129A (ja) 2020-09-30 2022-04-11 株式会社リコー アクチュエータ、液体吐出ヘッド及び液体吐出装置
CN113130498A (zh) * 2021-04-09 2021-07-16 无锡拍字节科技有限公司 一种铁电存储器的结构及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206788A (en) * 1991-12-12 1993-04-27 Ramtron Corporation Series ferroelectric capacitor structure for monolithic integrated circuits and method
EP0705918A2 (de) * 1994-09-30 1996-04-10 Texas Instruments Incorporated Verbesserungen in oder bezüglich mikroelektrischen Anordnungen

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434742A (en) * 1991-12-25 1995-07-18 Hitachi, Ltd. Capacitor for semiconductor integrated circuit and method of manufacturing the same
EP0571949A1 (de) * 1992-05-29 1993-12-01 Texas Instruments Incorporated Perovskite reich an Blei für Dünnfilm-Dielektrika
JP3206105B2 (ja) * 1992-06-09 2001-09-04 セイコーエプソン株式会社 誘電体素子の製造方法及び半導体記憶装置
JP3254750B2 (ja) * 1992-09-28 2002-02-12 セイコーエプソン株式会社 強誘電体薄膜素子、インクジェット記録装置および強誘電体薄膜素子の製造方法
JPH06228736A (ja) * 1993-02-03 1994-08-16 Tdk Corp 強誘電体薄膜の形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206788A (en) * 1991-12-12 1993-04-27 Ramtron Corporation Series ferroelectric capacitor structure for monolithic integrated circuits and method
EP0705918A2 (de) * 1994-09-30 1996-04-10 Texas Instruments Incorporated Verbesserungen in oder bezüglich mikroelektrischen Anordnungen

Also Published As

Publication number Publication date
TW440994B (en) 2001-06-16
JPH1050960A (ja) 1998-02-20
EP0821415A2 (de) 1998-01-28
EP0821415A3 (de) 1998-02-04

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