SG87924A1 - Monitoring a effluent from a chamber - Google Patents

Monitoring a effluent from a chamber

Info

Publication number
SG87924A1
SG87924A1 SG200101965A SG200101965A SG87924A1 SG 87924 A1 SG87924 A1 SG 87924A1 SG 200101965 A SG200101965 A SG 200101965A SG 200101965 A SG200101965 A SG 200101965A SG 87924 A1 SG87924 A1 SG 87924A1
Authority
SG
Singapore
Prior art keywords
effluent
monitoring
chamber
Prior art date
Application number
SG200101965A
Other languages
English (en)
Inventor
Tsai Kenneth
Bach Tung
Pham Quyen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG87924A1 publication Critical patent/SG87924A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/11—Automated chemical analysis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Optical Measuring Cells (AREA)
  • Measurement Of Radiation (AREA)
SG200101965A 2000-03-31 2001-03-29 Monitoring a effluent from a chamber SG87924A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/540,771 US6592817B1 (en) 2000-03-31 2000-03-31 Monitoring an effluent from a chamber

Publications (1)

Publication Number Publication Date
SG87924A1 true SG87924A1 (en) 2002-04-16

Family

ID=24156866

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200101965A SG87924A1 (en) 2000-03-31 2001-03-29 Monitoring a effluent from a chamber

Country Status (6)

Country Link
US (1) US6592817B1 (ko)
EP (1) EP1139386A3 (ko)
JP (1) JP2002033312A (ko)
KR (1) KR100786887B1 (ko)
SG (1) SG87924A1 (ko)
TW (1) TWI253702B (ko)

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US20080102011A1 (en) * 2006-10-27 2008-05-01 Applied Materials, Inc. Treatment of effluent containing chlorine-containing gas
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GB0904240D0 (en) * 2009-03-12 2009-04-22 Aviza Technology Ltd Apparatus for chemically etching a workpiece
JP5318670B2 (ja) * 2009-06-09 2013-10-16 東京エレクトロン株式会社 基板処理装置、基板処理方法、プログラムおよび記憶媒体
JP5698043B2 (ja) * 2010-08-04 2015-04-08 株式会社ニューフレアテクノロジー 半導体製造装置
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
US20130240142A1 (en) * 2012-03-15 2013-09-19 Globalfoundries Singapore Pte. Ltd. Isolation between a baffle plate and a focus adapter
US9299541B2 (en) * 2012-03-30 2016-03-29 Lam Research Corporation Methods and apparatuses for effectively reducing gas residence time in a plasma processing chamber
CN103594390B (zh) * 2012-08-15 2018-07-06 盛美半导体设备（上海）有限公司 终点检测装置及终点检测方法
JP5987573B2 (ja) * 2012-09-12 2016-09-07 セイコーエプソン株式会社 光学モジュール、電子機器、及び駆動方法
TWI493313B (zh) * 2013-02-06 2015-07-21 Atomic Energy Council 再生高壓游離腔數位環境監測電路
KR102477302B1 (ko) 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
KR102619304B1 (ko) * 2015-10-05 2024-01-02 인피콘, 인크. 가스 분석을 위한 국소 환경의 생성
KR102194085B1 (ko) * 2016-04-26 2020-12-22 어플라이드 머티어리얼스, 인코포레이티드 배출 퇴적물 제거를 위한 온도 제어식 원격 플라즈마 세정
US11317009B2 (en) * 2017-06-05 2022-04-26 SeeScan, Inc. Deep water enclosures for lighting and imaging
KR102498059B1 (ko) * 2017-12-28 2023-02-10 (주)보부하이테크 배기관 내 부산물 측정 장치 모듈 및 부산물 측정 방법
CN108614029B (zh) * 2018-05-12 2024-05-28 重庆邮电大学 高灵敏度微型光离子化传感器
WO2020027991A1 (en) * 2018-07-31 2020-02-06 Applied Materials, Inc. Precursor delivery system and methods related thereto
CN111837220B (zh) 2019-02-15 2023-07-25 株式会社日立高新技术 气体成分的监视方法及其装置、以及使用了其的处理装置
CN111999754B (zh) * 2020-07-10 2022-11-25 中国辐射防护研究院 一种基于核设施气载流出物监测数据的评价系统
KR20220019440A (ko) * 2020-08-10 2022-02-17 삼성전자주식회사 윈도우를 갖는 플라즈마 처리 장치, 분석 장치, 및 챔버

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Also Published As

Publication number Publication date
EP1139386A2 (en) 2001-10-04
KR20010095208A (ko) 2001-11-03
TWI253702B (en) 2006-04-21
KR100786887B1 (ko) 2007-12-17
EP1139386A3 (en) 2003-11-19
JP2002033312A (ja) 2002-01-31
US6592817B1 (en) 2003-07-15

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