SG87204A1 - Phosphorous doped copper - Google Patents
Phosphorous doped copperInfo
- Publication number
- SG87204A1 SG87204A1 SG200100762A SG200100762A SG87204A1 SG 87204 A1 SG87204 A1 SG 87204A1 SG 200100762 A SG200100762 A SG 200100762A SG 200100762 A SG200100762 A SG 200100762A SG 87204 A1 SG87204 A1 SG 87204A1
- Authority
- SG
- Singapore
- Prior art keywords
- phosphorous doped
- doped copper
- copper
- phosphorous
- doped
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/503,156 US6503375B1 (en) | 2000-02-11 | 2000-02-11 | Electroplating apparatus using a perforated phosphorus doped consumable anode |
Publications (1)
Publication Number | Publication Date |
---|---|
SG87204A1 true SG87204A1 (en) | 2002-03-19 |
Family
ID=24000938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200100762A SG87204A1 (en) | 2000-02-11 | 2001-02-12 | Phosphorous doped copper |
Country Status (6)
Country | Link |
---|---|
US (2) | US6503375B1 (de) |
EP (1) | EP1124257A3 (de) |
JP (1) | JP2001316886A (de) |
KR (1) | KR20010082135A (de) |
SG (1) | SG87204A1 (de) |
TW (1) | TWI222166B (de) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100773280B1 (ko) * | 1999-02-17 | 2007-11-05 | 가부시키가이샤 알박 | 배리어막제조방법및배리어막 |
US6478936B1 (en) * | 2000-05-11 | 2002-11-12 | Nutool Inc. | Anode assembly for plating and planarizing a conductive layer |
US20060175601A1 (en) * | 2000-08-22 | 2006-08-10 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
CN101887935B (zh) * | 2000-08-22 | 2013-09-11 | 哈佛学院董事会 | 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造 |
US6518198B1 (en) * | 2000-08-31 | 2003-02-11 | Micron Technology, Inc. | Electroless deposition of doped noble metals and noble metal alloys |
US6632737B1 (en) * | 2000-10-13 | 2003-10-14 | Tokyo Electron Limited | Method for enhancing the adhesion of a barrier layer to a dielectric |
JP4644926B2 (ja) * | 2000-10-13 | 2011-03-09 | ソニー株式会社 | 半導体製造装置および半導体装置の製造方法 |
JP4583710B2 (ja) * | 2000-12-11 | 2010-11-17 | プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ | ナノセンサ |
JP4076751B2 (ja) * | 2001-10-22 | 2008-04-16 | 日鉱金属株式会社 | 電気銅めっき方法、電気銅めっき用含リン銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ |
US7521366B2 (en) * | 2001-12-12 | 2009-04-21 | Lg Display Co., Ltd. | Manufacturing method of electro line for liquid crystal display device |
US6734053B2 (en) * | 2002-03-20 | 2004-05-11 | Taiwan Semiconductor Manufacturing Co., Ltd | Effective MIM fabrication method and apparatus to avoid breakdown and leakage on damascene copper process |
WO2004010552A1 (en) | 2002-07-19 | 2004-01-29 | President And Fellows Of Harvard College | Nanoscale coherent optical components |
US7128823B2 (en) | 2002-07-24 | 2006-10-31 | Applied Materials, Inc. | Anolyte for copper plating |
US7247222B2 (en) * | 2002-07-24 | 2007-07-24 | Applied Materials, Inc. | Electrochemical processing cell |
US20040217005A1 (en) * | 2002-07-24 | 2004-11-04 | Aron Rosenfeld | Method for electroplating bath chemistry control |
US20040134775A1 (en) * | 2002-07-24 | 2004-07-15 | Applied Materials, Inc. | Electrochemical processing cell |
US7223323B2 (en) * | 2002-07-24 | 2007-05-29 | Applied Materials, Inc. | Multi-chemistry plating system |
JP2004356606A (ja) * | 2003-04-03 | 2004-12-16 | Seiko Epson Corp | 製造装置及び製造方法 |
JP3626486B2 (ja) * | 2003-06-30 | 2005-03-09 | Tdk株式会社 | 電子部品の製造方法および電子部品 |
US20050126919A1 (en) * | 2003-11-07 | 2005-06-16 | Makoto Kubota | Plating method, plating apparatus and a method of forming fine circuit wiring |
EP1687377A4 (de) * | 2003-11-20 | 2009-05-06 | Virginia Tech Intell Prop | Mehrblockcopolymere mit hydrophil-hydrophoben segmenten für protonenaustauschmembranen |
US20090227107A9 (en) * | 2004-02-13 | 2009-09-10 | President And Fellows Of Havard College | Nanostructures Containing Metal Semiconductor Compounds |
US7030431B2 (en) * | 2004-03-19 | 2006-04-18 | Nanya Technology Corp. | Metal gate with composite film stack |
US20050277302A1 (en) * | 2004-05-28 | 2005-12-15 | Nguyen Son V | Advanced low dielectric constant barrier layers |
JP2006019708A (ja) * | 2004-06-04 | 2006-01-19 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
WO2006107312A1 (en) * | 2004-06-15 | 2006-10-12 | President And Fellows Of Harvard College | Nanosensors |
DE102004036734A1 (de) * | 2004-07-29 | 2006-03-23 | Konarka Technologies, Inc., Lowell | Kostengünstige organische Solarzelle und Verfahren zur Herstellung |
EP1831973A2 (de) * | 2004-12-06 | 2007-09-12 | The President and Fellows of Harvard College | Nanoskalige drahtgebundene datenspeicherung |
US20100227382A1 (en) * | 2005-05-25 | 2010-09-09 | President And Fellows Of Harvard College | Nanoscale sensors |
WO2006132659A2 (en) * | 2005-06-06 | 2006-12-14 | President And Fellows Of Harvard College | Nanowire heterostructures |
KR100651919B1 (ko) * | 2005-09-29 | 2006-12-01 | 엘지전자 주식회사 | 녹화 속도 조절 기능을 갖는 이동통신단말기 및 이를이용한 방법 |
AU2007309660A1 (en) | 2006-06-12 | 2008-05-02 | President And Fellows Of Harvard College | Nanosensors and related technologies |
US7498256B2 (en) * | 2006-08-21 | 2009-03-03 | International Business Machines Corporation | Copper contact via structure using hybrid barrier layer |
WO2008033303A2 (en) | 2006-09-11 | 2008-03-20 | President And Fellows Of Harvard College | Branched nanoscale wires |
US7968474B2 (en) | 2006-11-09 | 2011-06-28 | Nanosys, Inc. | Methods for nanowire alignment and deposition |
WO2008127314A1 (en) | 2006-11-22 | 2008-10-23 | President And Fellows Of Harvard College | High-sensitivity nanoscale wire sensors |
FR2945665A1 (fr) * | 2009-05-18 | 2010-11-19 | Alchimer | Procede de revetement d'un substrat semi-conducteur par electrodeposition. |
WO2010138506A1 (en) | 2009-05-26 | 2010-12-02 | Nanosys, Inc. | Methods and systems for electric field deposition of nanowires and other devices |
WO2011038228A1 (en) | 2009-09-24 | 2011-03-31 | President And Fellows Of Harvard College | Bent nanowires and related probing of species |
US9017528B2 (en) | 2011-04-14 | 2015-04-28 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US9005409B2 (en) | 2011-04-14 | 2015-04-14 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
JP2014237865A (ja) * | 2013-06-06 | 2014-12-18 | 株式会社荏原製作所 | 電解銅めっき装置 |
US20150008134A1 (en) | 2013-07-03 | 2015-01-08 | Tel Nexx, Inc. | Electrochemical deposition apparatus and methods for controlling the chemistry therein |
US9303329B2 (en) * | 2013-11-11 | 2016-04-05 | Tel Nexx, Inc. | Electrochemical deposition apparatus with remote catholyte fluid management |
DE102015105203A1 (de) * | 2015-04-07 | 2016-10-13 | Von Ardenne Gmbh | Verfahren zum Bearbeiten einer Schichtenstruktur und Verfahren zum Herstellen einer elektrisch hochleitfähigen Kupferschicht auf einem lichtdurchlässigen Substrat |
CN111952263B (zh) * | 2019-05-16 | 2022-08-05 | 上海交通大学 | 一种微米级单晶铜互连结构及其制备方法 |
US11842958B2 (en) * | 2022-03-18 | 2023-12-12 | Chun-Ming Lin | Conductive structure including copper-phosphorous alloy and a method of manufacturing conductive structure |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0254587A1 (de) * | 1986-07-25 | 1988-01-27 | Falconbridge Limited | Verfahren zur Herstellung von selbsttragenden Gegenständen aus phosphorhaltigem Kupfer |
EP0954027A1 (de) * | 1998-04-27 | 1999-11-03 | International Business Machines Corporation | Struktur für Kupferleitungsverbindungsleitung, die eine metallische Keimschicht umfasst |
EP0954016A2 (de) * | 1998-04-30 | 1999-11-03 | International Business Machines Corporation | Diffusionsbarriere für metallische Leiter |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5794600A (en) | 1980-12-03 | 1982-06-12 | Anritsu Corp | Method for replenishing anode material in copper sulfate plating bath |
US4466864A (en) * | 1983-12-16 | 1984-08-21 | At&T Technologies, Inc. | Methods of and apparatus for electroplating preselected surface regions of electrical articles |
DE4344387C2 (de) * | 1993-12-24 | 1996-09-05 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Kupfer und Anordnung zur Durchführung des Verfahrens |
US5545429A (en) * | 1994-07-01 | 1996-08-13 | International Business Machines Corporation | Fabrication of double side fully metallized plated thru-holes, in polymer structures, without seeding or photoprocess |
DE19653681C2 (de) * | 1996-12-13 | 2000-04-06 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Kupferschichten mit gleichmäßiger Schichtdicke und guten optischen und metallphysikalischen Eigenschaften und Anwendung des Verfahrens |
US5969422A (en) | 1997-05-15 | 1999-10-19 | Advanced Micro Devices, Inc. | Plated copper interconnect structure |
US5893966A (en) | 1997-07-28 | 1999-04-13 | Micron Technology, Inc. | Method and apparatus for continuous processing of semiconductor wafers |
US6140234A (en) * | 1998-01-20 | 2000-10-31 | International Business Machines Corporation | Method to selectively fill recesses with conductive metal |
WO2000005747A2 (en) * | 1998-06-30 | 2000-02-03 | Semitool, Inc. | Metallization structures for microelectronic applications and process for forming the structures |
US6113759A (en) * | 1998-12-18 | 2000-09-05 | International Business Machines Corporation | Anode design for semiconductor deposition having novel electrical contact assembly |
-
2000
- 2000-02-11 US US09/503,156 patent/US6503375B1/en not_active Expired - Fee Related
-
2001
- 2001-02-08 TW TW090102830A patent/TWI222166B/zh not_active IP Right Cessation
- 2001-02-09 EP EP01102783A patent/EP1124257A3/de not_active Withdrawn
- 2001-02-12 SG SG200100762A patent/SG87204A1/en unknown
- 2001-02-12 KR KR1020010006718A patent/KR20010082135A/ko not_active Application Discontinuation
- 2001-02-13 JP JP2001079412A patent/JP2001316886A/ja not_active Withdrawn
-
2002
- 2002-01-16 US US10/053,533 patent/US20020084192A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0254587A1 (de) * | 1986-07-25 | 1988-01-27 | Falconbridge Limited | Verfahren zur Herstellung von selbsttragenden Gegenständen aus phosphorhaltigem Kupfer |
EP0954027A1 (de) * | 1998-04-27 | 1999-11-03 | International Business Machines Corporation | Struktur für Kupferleitungsverbindungsleitung, die eine metallische Keimschicht umfasst |
EP0954016A2 (de) * | 1998-04-30 | 1999-11-03 | International Business Machines Corporation | Diffusionsbarriere für metallische Leiter |
Also Published As
Publication number | Publication date |
---|---|
US6503375B1 (en) | 2003-01-07 |
EP1124257A2 (de) | 2001-08-16 |
US20020084192A1 (en) | 2002-07-04 |
EP1124257A3 (de) | 2003-08-27 |
KR20010082135A (ko) | 2001-08-29 |
JP2001316886A (ja) | 2001-11-16 |
TWI222166B (en) | 2004-10-11 |
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