SG87154A1 - Method and apparatus for cleaning a chamber configured for copper deposition - Google Patents

Method and apparatus for cleaning a chamber configured for copper deposition

Info

Publication number
SG87154A1
SG87154A1 SG200004439A SG200004439A SG87154A1 SG 87154 A1 SG87154 A1 SG 87154A1 SG 200004439 A SG200004439 A SG 200004439A SG 200004439 A SG200004439 A SG 200004439A SG 87154 A1 SG87154 A1 SG 87154A1
Authority
SG
Singapore
Prior art keywords
cleaning
chamber configured
copper deposition
deposition
copper
Prior art date
Application number
SG200004439A
Other languages
English (en)
Inventor
Pavate Vikram
Xi Sun Bing
Ding Peijun
R Hong Ilyoung
L Chin Barry
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG87154A1 publication Critical patent/SG87154A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Epidemiology (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Public Health (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG200004439A 1999-08-12 2000-08-11 Method and apparatus for cleaning a chamber configured for copper deposition SG87154A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37310399A 1999-08-12 1999-08-12

Publications (1)

Publication Number Publication Date
SG87154A1 true SG87154A1 (en) 2002-03-19

Family

ID=23470962

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200004439A SG87154A1 (en) 1999-08-12 2000-08-11 Method and apparatus for cleaning a chamber configured for copper deposition

Country Status (4)

Country Link
EP (1) EP1076355A2 (de)
JP (1) JP2001185508A (de)
KR (1) KR20010021277A (de)
SG (1) SG87154A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6843258B2 (en) 2000-12-19 2005-01-18 Applied Materials, Inc. On-site cleaning gas generation for process chamber cleaning
US9105451B2 (en) * 2011-01-19 2015-08-11 Sumitomo Heavy Industries, Ltd. Plasma processing method and plasma processing apparatus
US9397011B1 (en) * 2015-04-13 2016-07-19 Lam Research Corporation Systems and methods for reducing copper contamination due to substrate processing chambers with components made of alloys including copper

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60174873A (ja) * 1984-02-20 1985-09-09 Hitachi Cable Ltd 蒸着用金属基板の前処理方法
US5000819A (en) * 1988-11-30 1991-03-19 Plessey Overseas Limited Metal surface cleaning processes
US6033584A (en) * 1997-12-22 2000-03-07 Advanced Micro Devices, Inc. Process for reducing copper oxide during integrated circuit fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60174873A (ja) * 1984-02-20 1985-09-09 Hitachi Cable Ltd 蒸着用金属基板の前処理方法
US5000819A (en) * 1988-11-30 1991-03-19 Plessey Overseas Limited Metal surface cleaning processes
US6033584A (en) * 1997-12-22 2000-03-07 Advanced Micro Devices, Inc. Process for reducing copper oxide during integrated circuit fabrication

Also Published As

Publication number Publication date
EP1076355A2 (de) 2001-02-14
JP2001185508A (ja) 2001-07-06
KR20010021277A (ko) 2001-03-15

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