SG87109A1 - System and method for cleaning silicon-coated surfaces in an ion implanter - Google Patents
System and method for cleaning silicon-coated surfaces in an ion implanterInfo
- Publication number
- SG87109A1 SG87109A1 SG200002361A SG200002361A SG87109A1 SG 87109 A1 SG87109 A1 SG 87109A1 SG 200002361 A SG200002361 A SG 200002361A SG 200002361 A SG200002361 A SG 200002361A SG 87109 A1 SG87109 A1 SG 87109A1
- Authority
- SG
- Singapore
- Prior art keywords
- ion implanter
- coated surfaces
- cleaning silicon
- silicon
- cleaning
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/309,466 US6259105B1 (en) | 1999-05-10 | 1999-05-10 | System and method for cleaning silicon-coated surfaces in an ion implanter |
Publications (1)
Publication Number | Publication Date |
---|---|
SG87109A1 true SG87109A1 (en) | 2002-03-19 |
Family
ID=23198359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200002361A SG87109A1 (en) | 1999-05-10 | 2000-04-27 | System and method for cleaning silicon-coated surfaces in an ion implanter |
Country Status (6)
Country | Link |
---|---|
US (1) | US6259105B1 (ja) |
EP (1) | EP1054438A3 (ja) |
JP (1) | JP2001007041A (ja) |
KR (1) | KR100587630B1 (ja) |
SG (1) | SG87109A1 (ja) |
TW (1) | TW455917B (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6415198B1 (en) | 1999-06-25 | 2002-07-02 | Applied Materials, Inc. | Plasma etching of silicon using a chlorine chemistry augmented with sulfur dioxide |
DE10029523A1 (de) * | 2000-06-21 | 2002-01-10 | Messer Griesheim Gmbh | Verfahren und Vorrichtung zum Reinigen eines PVD- oder CVD-Reaktors sowie von Abgasleitungen desselben |
JP3387488B2 (ja) * | 2000-12-01 | 2003-03-17 | 日新電機株式会社 | イオンビーム照射装置 |
US20030062064A1 (en) * | 2001-09-28 | 2003-04-03 | Infineon Technologies North America Corp. | Method of removing PECVD residues of fluorinated plasma using in-situ H2 plasma |
US7820981B2 (en) * | 2003-12-12 | 2010-10-26 | Semequip, Inc. | Method and apparatus for extending equipment uptime in ion implantation |
US20080073559A1 (en) * | 2003-12-12 | 2008-03-27 | Horsky Thomas N | Controlling the flow of vapors sublimated from solids |
US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
CN101495190B (zh) * | 2005-03-16 | 2013-05-01 | 高级技术材料公司 | 用于从固体源递送试剂的系统 |
US7511287B2 (en) | 2005-09-21 | 2009-03-31 | Axcelis Technologies, Inc. | Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases |
JP4875886B2 (ja) * | 2005-11-22 | 2012-02-15 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
TWI473149B (zh) * | 2006-04-26 | 2015-02-11 | Advanced Tech Materials | 半導體製程系統之清潔 |
US20080142039A1 (en) * | 2006-12-13 | 2008-06-19 | Advanced Technology Materials, Inc. | Removal of nitride deposits |
KR100855540B1 (ko) | 2007-07-10 | 2008-09-01 | 주식회사 코미코 | 이온 주입 장치, 이온 주입 장치의 내부 구조물 및 상기이온 주입 장치의 코팅층 형성 방법 |
WO2009039382A1 (en) | 2007-09-21 | 2009-03-26 | Semequip. Inc. | Method for extending equipment uptime in ion implantation |
TWI573179B (zh) | 2008-02-11 | 2017-03-01 | 先進科技材料公司 | 在半導體處理系統中離子源之清洗 |
CN201648509U (zh) * | 2010-04-21 | 2010-11-24 | 北京京东方光电科技有限公司 | 磁控溅射设备 |
US9558914B2 (en) * | 2015-02-25 | 2017-01-31 | Axcelis Technologies, Inc. | Bipolar wafer charge monitor system and ion implantation system comprising same |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4703183A (en) * | 1985-12-05 | 1987-10-27 | Eaton Corporation | Ion implantation chamber purification method and apparatus |
JPH02155147A (ja) * | 1988-12-06 | 1990-06-14 | Tokyo Electron Ltd | イオン注入装置のクリーニング方法 |
US5144147A (en) * | 1990-08-31 | 1992-09-01 | Kabushiki Kaisha Toshiba | Ion implantation apparatus and method of cleaning the same |
US5281302A (en) * | 1992-01-27 | 1994-01-25 | Siemens Aktiengesellschaft | Method for cleaning reaction chambers by plasma etching |
US5413670A (en) * | 1993-07-08 | 1995-05-09 | Air Products And Chemicals, Inc. | Method for plasma etching or cleaning with diluted NF3 |
US5486235A (en) * | 1993-08-09 | 1996-01-23 | Applied Materials, Inc. | Plasma dry cleaning of semiconductor processing chambers |
US5611863A (en) * | 1994-08-22 | 1997-03-18 | Tokyo Electron Limited | Semiconductor processing apparatus and cleaning method thereof |
US5633506A (en) * | 1995-07-17 | 1997-05-27 | Eaton Corporation | Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses |
US5824375A (en) * | 1996-10-24 | 1998-10-20 | Applied Materials, Inc. | Decontamination of a plasma reactor using a plasma after a chamber clean |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4923828A (en) * | 1989-07-07 | 1990-05-08 | Eastman Kodak Company | Gaseous cleaning method for silicon devices |
JPH05325874A (ja) * | 1992-05-21 | 1993-12-10 | Sony Corp | イオン注入装置 |
EP0648858A1 (en) * | 1993-10-15 | 1995-04-19 | Applied Materials, Inc. | Methods of coating plasma etch chambers and apparatus for plasma etching workpieces |
DE4339465C2 (de) * | 1993-11-19 | 1997-05-28 | Gold Star Electronics | Verfahren zur Behandlung der Oberfläche eines einer Trockenätzung ausgesetzten Siliciumsubstrats |
US5514246A (en) | 1994-06-02 | 1996-05-07 | Micron Technology, Inc. | Plasma reactors and method of cleaning a plasma reactor |
US5554854A (en) | 1995-07-17 | 1996-09-10 | Eaton Corporation | In situ removal of contaminants from the interior surfaces of an ion beam implanter |
US5656092A (en) * | 1995-12-18 | 1997-08-12 | Eaton Corporation | Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter |
US5843239A (en) | 1997-03-03 | 1998-12-01 | Applied Materials, Inc. | Two-step process for cleaning a substrate processing chamber |
US6125859A (en) * | 1997-03-05 | 2000-10-03 | Applied Materials, Inc. | Method for improved cleaning of substrate processing systems |
KR100460800B1 (ko) * | 1997-07-03 | 2005-05-19 | 삼성전자주식회사 | 플라즈마처리장치및이의잔류물제거플레이트제조방법 |
-
1999
- 1999-05-10 US US09/309,466 patent/US6259105B1/en not_active Expired - Lifetime
-
2000
- 2000-04-26 TW TW089107824A patent/TW455917B/zh not_active IP Right Cessation
- 2000-04-27 SG SG200002361A patent/SG87109A1/en unknown
- 2000-05-08 EP EP00303850A patent/EP1054438A3/en not_active Withdrawn
- 2000-05-09 KR KR1020000024627A patent/KR100587630B1/ko not_active IP Right Cessation
- 2000-05-09 JP JP2000135933A patent/JP2001007041A/ja active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4703183A (en) * | 1985-12-05 | 1987-10-27 | Eaton Corporation | Ion implantation chamber purification method and apparatus |
JPH02155147A (ja) * | 1988-12-06 | 1990-06-14 | Tokyo Electron Ltd | イオン注入装置のクリーニング方法 |
US5144147A (en) * | 1990-08-31 | 1992-09-01 | Kabushiki Kaisha Toshiba | Ion implantation apparatus and method of cleaning the same |
US5281302A (en) * | 1992-01-27 | 1994-01-25 | Siemens Aktiengesellschaft | Method for cleaning reaction chambers by plasma etching |
US5413670A (en) * | 1993-07-08 | 1995-05-09 | Air Products And Chemicals, Inc. | Method for plasma etching or cleaning with diluted NF3 |
US5486235A (en) * | 1993-08-09 | 1996-01-23 | Applied Materials, Inc. | Plasma dry cleaning of semiconductor processing chambers |
US5611863A (en) * | 1994-08-22 | 1997-03-18 | Tokyo Electron Limited | Semiconductor processing apparatus and cleaning method thereof |
US5633506A (en) * | 1995-07-17 | 1997-05-27 | Eaton Corporation | Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses |
US5824375A (en) * | 1996-10-24 | 1998-10-20 | Applied Materials, Inc. | Decontamination of a plasma reactor using a plasma after a chamber clean |
Also Published As
Publication number | Publication date |
---|---|
KR100587630B1 (ko) | 2006-06-08 |
US6259105B1 (en) | 2001-07-10 |
EP1054438A3 (en) | 2001-11-21 |
EP1054438A2 (en) | 2000-11-22 |
JP2001007041A (ja) | 2001-01-12 |
TW455917B (en) | 2001-09-21 |
KR20000077197A (ko) | 2000-12-26 |
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