SG87092A1 - Wafer, apparatus and method of chamfering wafer - Google Patents
Wafer, apparatus and method of chamfering waferInfo
- Publication number
- SG87092A1 SG87092A1 SG200001491A SG200001491A SG87092A1 SG 87092 A1 SG87092 A1 SG 87092A1 SG 200001491 A SG200001491 A SG 200001491A SG 200001491 A SG200001491 A SG 200001491A SG 87092 A1 SG87092 A1 SG 87092A1
- Authority
- SG
- Singapore
- Prior art keywords
- wafer
- chamfering
- chamfering wafer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B43—WRITING OR DRAWING IMPLEMENTS; BUREAU ACCESSORIES
- B43K—IMPLEMENTS FOR WRITING OR DRAWING
- B43K29/00—Combinations of writing implements with other articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11063670A JP2000254845A (ja) | 1999-03-10 | 1999-03-10 | ウエーハのノッチ溝の面取り方法及びウエーハ |
Publications (1)
Publication Number | Publication Date |
---|---|
SG87092A1 true SG87092A1 (en) | 2002-03-19 |
Family
ID=13236032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200001491A SG87092A1 (en) | 1999-03-10 | 2000-03-10 | Wafer, apparatus and method of chamfering wafer |
Country Status (7)
Country | Link |
---|---|
US (1) | US6439969B1 (zh) |
EP (1) | EP1034883A1 (zh) |
JP (1) | JP2000254845A (zh) |
KR (1) | KR20000076805A (zh) |
CN (1) | CN1267085A (zh) |
SG (1) | SG87092A1 (zh) |
TW (1) | TW434099B (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003053723A (ja) * | 2001-08-10 | 2003-02-26 | Denso Corp | 硬脆材料の切断方法 |
US7102206B2 (en) * | 2003-01-20 | 2006-09-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate, method for fabricating the same, and method for fabricating semiconductor device |
JP3534115B1 (ja) | 2003-04-02 | 2004-06-07 | 住友電気工業株式会社 | エッジ研磨した窒化物半導体基板とエッジ研磨したGaN自立基板及び窒化物半導体基板のエッジ加工方法 |
JP4116583B2 (ja) * | 2004-03-24 | 2008-07-09 | 株式会社東芝 | 基板処理方法 |
EP1834731B1 (de) * | 2006-03-15 | 2010-05-12 | J. Schneeberger Holding AG | Verfahren zum Schleifen von Zerspanungswerkzeugen |
JP4809744B2 (ja) * | 2006-09-19 | 2011-11-09 | 東京エレクトロン株式会社 | ウエハの中心検出方法及びその方法を記録した記録媒体 |
JP2009283616A (ja) * | 2008-05-21 | 2009-12-03 | Sumco Corp | 半導体ウェーハ |
EP2213415A1 (en) * | 2009-01-29 | 2010-08-04 | S.O.I. TEC Silicon | Device for polishing the edge of a semiconductor substrate |
WO2016088868A1 (ja) * | 2014-12-04 | 2016-06-09 | 日本電気硝子株式会社 | ガラス板 |
JP6349290B2 (ja) * | 2015-09-03 | 2018-06-27 | 信越半導体株式会社 | 単結晶ウェーハの表裏判定方法 |
JP6504262B2 (ja) * | 2015-10-26 | 2019-04-24 | 日立金属株式会社 | 圧粉成形体のエッジ処理装置及び圧粉成形体のエッジ処理方法 |
KR102468793B1 (ko) | 2016-01-08 | 2022-11-18 | 삼성전자주식회사 | 반도체 웨이퍼, 반도체 구조체 및 이를 제조하는 방법 |
CN108340237A (zh) * | 2018-03-27 | 2018-07-31 | 京东方科技集团股份有限公司 | 研磨装置及研磨方法 |
EP3567138B1 (en) * | 2018-05-11 | 2020-03-25 | SiCrystal GmbH | Chamfered silicon carbide substrate and method of chamfering |
EP3567139B1 (en) | 2018-05-11 | 2021-04-07 | SiCrystal GmbH | Chamfered silicon carbide substrate and method of chamfering |
CN114046749B (zh) * | 2021-10-26 | 2022-07-08 | 刘红霞 | 预制混凝土构件点状凹坑结合面粗糙度检测方法及系统 |
CN118254293B (zh) * | 2024-05-11 | 2024-09-10 | 江苏福旭科技有限公司 | 一种单晶硅片倒角设备及使用方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5185965A (en) * | 1991-07-12 | 1993-02-16 | Daito Shoji Co., Ltd. | Method and apparatus for grinding notches of semiconductor wafer |
EP0686460A1 (en) * | 1991-06-12 | 1995-12-13 | Shin-Etsu Handotai Company Limited | Method for chamfering notch wafer and apparatus therefor |
US5490811A (en) * | 1991-06-12 | 1996-02-13 | Shin-Etsu Handotai Co., Ltd. | Apparatus for chamfering notch of wafer |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0624199B2 (ja) * | 1982-07-30 | 1994-03-30 | 株式会社日立製作所 | ウエハの加工方法 |
US5117590A (en) * | 1988-08-12 | 1992-06-02 | Shin-Etsu Handotai Co., Ltd. | Method of automatically chamfering a wafer and apparatus therefor |
US4905425A (en) * | 1988-09-30 | 1990-03-06 | Shin-Etsu Handotai Company Limited | Method for chamfering the notch of a notch-cut semiconductor wafer |
JP2571477B2 (ja) * | 1991-06-12 | 1997-01-16 | 信越半導体株式会社 | ウエーハのノッチ部面取り装置 |
JP2798345B2 (ja) | 1993-06-11 | 1998-09-17 | 信越半導体株式会社 | ウェーハのノッチ部研磨装置 |
JPH09168953A (ja) | 1995-12-16 | 1997-06-30 | M Tec Kk | 半導体ウェーハのエッジ研摩方法及び装置 |
-
1999
- 1999-03-10 JP JP11063670A patent/JP2000254845A/ja active Pending
-
2000
- 2000-03-10 KR KR1020000011938A patent/KR20000076805A/ko active IP Right Grant
- 2000-03-10 TW TW089104337A patent/TW434099B/zh active
- 2000-03-10 SG SG200001491A patent/SG87092A1/en unknown
- 2000-03-10 CN CN00102961A patent/CN1267085A/zh active Pending
- 2000-03-10 EP EP00105095A patent/EP1034883A1/en not_active Withdrawn
- 2000-03-10 US US09/522,910 patent/US6439969B1/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0686460A1 (en) * | 1991-06-12 | 1995-12-13 | Shin-Etsu Handotai Company Limited | Method for chamfering notch wafer and apparatus therefor |
US5490811A (en) * | 1991-06-12 | 1996-02-13 | Shin-Etsu Handotai Co., Ltd. | Apparatus for chamfering notch of wafer |
US5185965A (en) * | 1991-07-12 | 1993-02-16 | Daito Shoji Co., Ltd. | Method and apparatus for grinding notches of semiconductor wafer |
Also Published As
Publication number | Publication date |
---|---|
US6439969B1 (en) | 2002-08-27 |
TW434099B (en) | 2001-05-16 |
JP2000254845A (ja) | 2000-09-19 |
KR20000076805A (ko) | 2000-12-26 |
EP1034883A1 (en) | 2000-09-13 |
CN1267085A (zh) | 2000-09-20 |
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