SG79282A1 - The complex for the high dielectric film deposition and the method of deposition - Google Patents

The complex for the high dielectric film deposition and the method of deposition

Info

Publication number
SG79282A1
SG79282A1 SG9904824A SG1999004824A SG79282A1 SG 79282 A1 SG79282 A1 SG 79282A1 SG 9904824 A SG9904824 A SG 9904824A SG 1999004824 A SG1999004824 A SG 1999004824A SG 79282 A1 SG79282 A1 SG 79282A1
Authority
SG
Singapore
Prior art keywords
deposition
complex
dielectric film
high dielectric
film deposition
Prior art date
Application number
SG9904824A
Other languages
English (en)
Inventor
Hyun-Koock Shin
Original Assignee
Rohm & Haas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas filed Critical Rohm & Haas
Publication of SG79282A1 publication Critical patent/SG79282A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C07F3/003—Compounds containing elements of Groups 2 or 12 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
SG9904824A 1998-09-28 1999-09-25 The complex for the high dielectric film deposition and the method of deposition SG79282A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19980040371A KR100289947B1 (ko) 1998-09-28 1998-09-28 고유전성박막증착용전구체착화합물및그를이용한박막증착방법

Publications (1)

Publication Number Publication Date
SG79282A1 true SG79282A1 (en) 2001-03-20

Family

ID=19552263

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9904824A SG79282A1 (en) 1998-09-28 1999-09-25 The complex for the high dielectric film deposition and the method of deposition

Country Status (4)

Country Link
EP (1) EP0994118A3 (ko)
JP (1) JP2000109486A (ko)
KR (1) KR100289947B1 (ko)
SG (1) SG79282A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503561B1 (en) * 1999-07-08 2003-01-07 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
KR100381388B1 (ko) * 2000-07-06 2003-04-23 (주)유피케미칼 산화금속 박막 증착용 전구체 화합물 및 그를 이용한 박막증착 방법
KR100400219B1 (ko) * 2000-12-30 2003-10-01 삼성전자주식회사 피지티(ｐｚｔ)막 제조용 전구체 조성물 및 그 보관용기
KR100724084B1 (ko) * 2005-11-16 2007-06-04 주식회사 유피케미칼 디알킬아미도디하이드로알루미늄 화합물을 이용한 박막증착방법
EP2708543A1 (en) * 2012-09-17 2014-03-19 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Salen-type strontium precursors for vapor phase deposition of thin films
EP2708542B1 (en) * 2012-09-17 2015-04-08 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Salen-type barium precursors for vapor phase deposition of thin films

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995004119A1 (en) * 1993-08-02 1995-02-09 The Associated Octel Company Limited Fuel additives

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5840897A (en) * 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
DE4231680A1 (de) * 1992-09-22 1994-03-24 Ruetgerswerke Ag Verfahren zur Herstellung von Metallkomplexen mit hoher Koordinationszahl und deren Verwendung
JP3547471B2 (ja) * 1994-03-09 2004-07-28 富士通株式会社 誘電体膜の気相成長方法
US5916359A (en) * 1995-03-31 1999-06-29 Advanced Technology Materials, Inc. Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995004119A1 (en) * 1993-08-02 1995-02-09 The Associated Octel Company Limited Fuel additives

Also Published As

Publication number Publication date
KR100289947B1 (ko) 2001-05-15
JP2000109486A (ja) 2000-04-18
KR20000021349A (ko) 2000-04-25
EP0994118A3 (en) 2000-05-03
EP0994118A2 (en) 2000-04-19

Similar Documents

Publication Publication Date Title
GB2316535B (en) Dielectric film and process for forming the same
GB2293179B (en) Coated substrate and process for its formation
EP0989443A3 (en) Anti-reflection film and process for the preparation of the same
AU1461700A (en) Method and apparatus for electrochemical mechanical deposition
EP1118880A4 (en) ORGANIC WIRE DEPOSITION PROCESS
EP0664560A3 (en) Method of forming an insulating layer.
EP0990682A4 (en) PROCESS FOR FORMING FILM AND COATING COMPOSITION
AU3867599A (en) Apparatus and method for multi-target physical vapor deposition
AU5912399A (en) Method for the chemical vapor deposition of copper-based films and copper sourceprecursors for the same
EP1162244A4 (en) THIN COATING OF FLUOROPOLYMER AND METHOD FOR FORMING SAME
AU2228699A (en) Extendible stent apparatus
HK1049973A1 (zh) 超薄膜修補表面法
EP1119034A4 (en) METHOD FOR PLASMA SUPPORTED LAYER DEPOSITION
AU3685397A (en) Photovoltaic element and method of and apparatus for manufacturing the same
SG85106A1 (en) Soi substrate and method and system for manufacturing the same
SG83121A1 (en) Aluminium complex derivatives for chemical vacuum evaporation and the method of producing the same
EP1052687A4 (en) SOI SUBSTRATE AND RELATED MANUFACTURING PROCESS
GB2312179B (en) Method for formation of coating film
SG79282A1 (en) The complex for the high dielectric film deposition and the method of deposition
EP1035569A4 (en) PLASMA DEPOSITION OF FILMS
AU3100997A (en) Circuit and method for reducing the effects of metastability
AU1581100A (en) Method and apparatus for managing the configuration and functionality of a semiconductor design
AU4992699A (en) Apparatus and method for manufacturing gaskets
GB2311738B (en) Method for formation of coating film
AU2652797A (en) Dielectric thin film element and method for manufacturing the same