SG79234A1 - Variable domain redundancy replacement configuration for a memory device - Google Patents

Variable domain redundancy replacement configuration for a memory device

Info

Publication number
SG79234A1
SG79234A1 SG9801770A SG1998001770A SG79234A1 SG 79234 A1 SG79234 A1 SG 79234A1 SG 9801770 A SG9801770 A SG 9801770A SG 1998001770 A SG1998001770 A SG 1998001770A SG 79234 A1 SG79234 A1 SG 79234A1
Authority
SG
Singapore
Prior art keywords
memory device
variable domain
redundancy replacement
replacement configuration
domain redundancy
Prior art date
Application number
SG9801770A
Other languages
English (en)
Inventor
Daniel Garbiel
Dortu Jean-Marc
Pfeffel Karl-Peter
Original Assignee
Ibm
Siemens Ag
Kirihata Toshiaki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Siemens Ag, Kirihata Toshiaki filed Critical Ibm
Publication of SG79234A1 publication Critical patent/SG79234A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/804—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout to prevent clustered faults
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
SG9801770A 1997-07-16 1998-07-13 Variable domain redundancy replacement configuration for a memory device SG79234A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/895,061 US5978931A (en) 1997-07-16 1997-07-16 Variable domain redundancy replacement configuration for a memory device

Publications (1)

Publication Number Publication Date
SG79234A1 true SG79234A1 (en) 2001-03-20

Family

ID=25403898

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9801770A SG79234A1 (en) 1997-07-16 1998-07-13 Variable domain redundancy replacement configuration for a memory device

Country Status (9)

Country Link
US (1) US5978931A (fr)
EP (1) EP0892349B1 (fr)
JP (1) JP3850986B2 (fr)
KR (1) KR100305934B1 (fr)
CN (1) CN1237545C (fr)
DE (1) DE69811571T2 (fr)
MY (1) MY115905A (fr)
SG (1) SG79234A1 (fr)
TW (1) TW461994B (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498756B2 (en) * 2000-06-28 2002-12-24 Hynix Semiconductor Inc. Semiconductor memory device having row repair circuitry
US6773083B2 (en) 2001-08-29 2004-08-10 Lexmark International, Inc. Method and apparatus for non-volatile memory usage in an ink jet printer
US6879530B2 (en) * 2002-07-18 2005-04-12 Micron Technology, Inc. Apparatus for dynamically repairing a semiconductor memory
TWI262504B (en) * 2003-04-15 2006-09-21 Ibm Dynamic semiconductor memory device
US7379974B2 (en) * 2003-07-14 2008-05-27 International Business Machines Corporation Multipath data retrieval from redundant array
US20050086424A1 (en) * 2003-10-21 2005-04-21 Infineon Technologies North America Corp. Well-matched echo clock in memory system
US7272813B2 (en) * 2004-09-15 2007-09-18 Omnivision Technologies, Inc. Transparent re-mapping of parallel computational units
KR100761849B1 (ko) 2006-06-28 2007-09-28 삼성전자주식회사 생산비용을 줄일 수 있는 반도체 메모리 장치
US7768847B2 (en) * 2008-04-09 2010-08-03 Rambus Inc. Programmable memory repair scheme
US8879295B1 (en) 2013-08-05 2014-11-04 International Business Machines Corporation Electronic circuit for remapping faulty memory arrays of variable size
US9343185B2 (en) 2013-09-26 2016-05-17 International Business Machines Corporation Electronic circuit for fitting a virtual address range to a physical memory containing faulty address
JP6360610B1 (ja) * 2017-11-22 2018-07-18 力晶科技股▲ふん▼有限公司 Ｓｒａｍ装置のための冗長回路、ｓｒａｍ装置、及び半導体装置
EP3992972A4 (fr) 2020-09-01 2023-07-05 Changxin Memory Technologies, Inc. Procédé et appareil pour déterminer un schéma de réparation de bits défaillants, et puce
CN114121129B (zh) * 2020-09-01 2023-09-12 长鑫存储技术有限公司 失效位元修补方案的确定方法、装置及芯片

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5357612A (en) * 1990-02-27 1994-10-18 International Business Machines Corporation Mechanism for passing messages between several processors coupled through a shared intelligent memory
US5691945A (en) * 1995-05-31 1997-11-25 Macronix International Co., Ltd. Technique for reconfiguring a high density memory
US5703817A (en) * 1995-11-17 1997-12-30 Kabushiki Kaisha Toshiba Semiconductor memory device
US5724295A (en) * 1995-06-07 1998-03-03 International Business Machines Corporation Partitioned dynamic memory allowing substitution of a redundant circuit in any partition and using partial address disablement and disablement override
US5831913A (en) * 1997-03-31 1998-11-03 International Business Machines Corporation Method of making a memory fault-tolerant using a variable size redundancy replacement configuration
US5831914A (en) * 1997-03-31 1998-11-03 International Business Machines Corporation Variable size redundancy replacement architecture to make a memory fault-tolerant

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69129882T2 (de) * 1990-06-19 1999-03-04 Texas Instruments Inc Assoziatives DRAM-Redundanzschema mit variabler Satzgrösse
JPH0831279B2 (ja) * 1990-12-20 1996-03-27 インターナショナル・ビジネス・マシーンズ・コーポレイション 冗長システム
US5295101A (en) * 1992-01-31 1994-03-15 Texas Instruments Incorporated Array block level redundancy with steering logic
JP3040625B2 (ja) * 1992-02-07 2000-05-15 松下電器産業株式会社 半導体記憶装置
EP0636258B1 (fr) * 1992-04-16 1996-03-27 Siemens Aktiengesellschaft Memoire a semi-conducteurs integre a redondance
US5491664A (en) * 1993-09-27 1996-02-13 Cypress Semiconductor Corporation Flexibilitiy for column redundancy in a divided array architecture
KR960008825B1 (en) * 1993-11-18 1996-07-05 Samsung Electronics Co Ltd Row redundancy circuit and method of semiconductor memory device with double row decoder
JP3351595B2 (ja) * 1993-12-22 2002-11-25 株式会社日立製作所 半導体メモリ装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5357612A (en) * 1990-02-27 1994-10-18 International Business Machines Corporation Mechanism for passing messages between several processors coupled through a shared intelligent memory
US5691945A (en) * 1995-05-31 1997-11-25 Macronix International Co., Ltd. Technique for reconfiguring a high density memory
US5724295A (en) * 1995-06-07 1998-03-03 International Business Machines Corporation Partitioned dynamic memory allowing substitution of a redundant circuit in any partition and using partial address disablement and disablement override
US5703817A (en) * 1995-11-17 1997-12-30 Kabushiki Kaisha Toshiba Semiconductor memory device
US5831913A (en) * 1997-03-31 1998-11-03 International Business Machines Corporation Method of making a memory fault-tolerant using a variable size redundancy replacement configuration
US5831914A (en) * 1997-03-31 1998-11-03 International Business Machines Corporation Variable size redundancy replacement architecture to make a memory fault-tolerant

Also Published As

Publication number Publication date
CN1237545C (zh) 2006-01-18
KR19990013406A (ko) 1999-02-25
DE69811571T2 (de) 2003-11-27
JPH1196790A (ja) 1999-04-09
EP0892349A2 (fr) 1999-01-20
KR100305934B1 (ko) 2001-11-05
JP3850986B2 (ja) 2006-11-29
TW461994B (en) 2001-11-01
EP0892349B1 (fr) 2003-02-26
DE69811571D1 (de) 2003-04-03
US5978931A (en) 1999-11-02
EP0892349A3 (fr) 2000-02-02
MY115905A (en) 2003-09-30
CN1205521A (zh) 1999-01-20

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