SG72825A1 - Semiconductor device and method for the fabrication thereof - Google Patents

Semiconductor device and method for the fabrication thereof

Info

Publication number
SG72825A1
SG72825A1 SG1998001223A SG1998001223A SG72825A1 SG 72825 A1 SG72825 A1 SG 72825A1 SG 1998001223 A SG1998001223 A SG 1998001223A SG 1998001223 A SG1998001223 A SG 1998001223A SG 72825 A1 SG72825 A1 SG 72825A1
Authority
SG
Singapore
Prior art keywords
fabrication
semiconductor device
semiconductor
Prior art date
Application number
SG1998001223A
Other languages
English (en)
Inventor
Akihiko Kobayashi
Katsutoshi Mine
Takashi Nakamura
Motoshi Sasaki
Kiyotaka Sawa
Original Assignee
Dow Corning Toray Silicone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13886097A external-priority patent/JP3210601B2/ja
Priority claimed from JP29859297A external-priority patent/JP3208100B2/ja
Application filed by Dow Corning Toray Silicone filed Critical Dow Corning Toray Silicone
Publication of SG72825A1 publication Critical patent/SG72825A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02351—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG1998001223A 1997-05-28 1998-05-28 Semiconductor device and method for the fabrication thereof SG72825A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13886097A JP3210601B2 (ja) 1997-05-28 1997-05-28 半導体装置及びその製造方法
JP29859297A JP3208100B2 (ja) 1997-10-30 1997-10-30 電気絶縁性薄膜の形成方法

Publications (1)

Publication Number Publication Date
SG72825A1 true SG72825A1 (en) 2000-05-23

Family

ID=26471801

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998001223A SG72825A1 (en) 1997-05-28 1998-05-28 Semiconductor device and method for the fabrication thereof

Country Status (5)

Country Link
US (2) US6214748B1 (fr)
EP (1) EP0881668A3 (fr)
KR (1) KR19980087429A (fr)
SG (1) SG72825A1 (fr)
TW (1) TW426915B (fr)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0881668A3 (fr) * 1997-05-28 2000-11-15 Dow Corning Toray Silicone Company, Ltd. Dépôt d'une couche mince électriquement isolante avec une constante diélectrique faible
US6531193B2 (en) 1997-07-07 2003-03-11 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
US6500740B1 (en) * 1997-07-14 2002-12-31 Agere Systems Inc. Process for fabricating semiconductor devices in which the distribution of dopants is controlled
US6162838A (en) * 1998-06-05 2000-12-19 Georgia Tech Research Corporation Porous insulating compounds and method for making same
US6107184A (en) * 1998-12-09 2000-08-22 Applied Materials, Inc. Nano-porous copolymer films having low dielectric constants
US6551926B1 (en) * 1999-06-09 2003-04-22 Electron Vision Corporation Electron beam annealing of metals, alloys, nitrides and silicides
US6420441B1 (en) 1999-10-01 2002-07-16 Shipley Company, L.L.C. Porous materials
JP2001135633A (ja) * 1999-11-10 2001-05-18 Matsushita Electronics Industry Corp 半導体装置の製造方法
KR100430464B1 (ko) * 1999-12-28 2004-05-10 쇼꾸바이 카세이 고교 가부시키가이샤 낮은 유전상수를 갖는 실리카-함유 코팅 필름의 형성 방법및 이 필름으로 코팅된 반도체 기판
JP2001214127A (ja) * 2000-01-31 2001-08-07 Dow Corning Toray Silicone Co Ltd 電気絶縁性薄膜形成性樹脂組成物、および電気絶縁性薄膜の形成方法
TW525305B (en) 2000-02-22 2003-03-21 Semiconductor Energy Lab Self-light-emitting device and method of manufacturing the same
US6432842B2 (en) * 2000-03-30 2002-08-13 Tokyo Electron Limited Coating method and coating apparatus
US6514881B1 (en) * 2000-05-23 2003-02-04 Texas Instruments Incorporated Hybrid porous low-K dielectrics for integrated circuits
US6891237B1 (en) * 2000-06-27 2005-05-10 Lucent Technologies Inc. Organic semiconductor device having an active dielectric layer comprising silsesquioxanes
US6531344B1 (en) * 2000-07-06 2003-03-11 Motorola, Inc. High frequency gallium arsenide MMIC die coating method
WO2002006377A1 (fr) * 2000-07-19 2002-01-24 Dow Global Technologies Inc. Compositions de dielectriques appliquees par centrifugation avec renforceur de revetement
KR100486333B1 (ko) * 2000-07-21 2005-04-29 가부시끼가이샤 한도따이 프로세스 켄큐쇼 반도체 장치 및 그 제조 방법
MY128644A (en) 2000-08-31 2007-02-28 Georgia Tech Res Inst Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
US6576345B1 (en) * 2000-11-30 2003-06-10 Novellus Systems Inc Dielectric films with low dielectric constants
KR100881722B1 (ko) * 2001-01-19 2009-02-06 도쿄엘렉트론가부시키가이샤 기판의 처리방법 및 기판의 처리장치
US6303524B1 (en) * 2001-02-20 2001-10-16 Mattson Thermal Products Inc. High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques
JP2002280459A (ja) 2001-03-21 2002-09-27 Kawasaki Microelectronics Kk 集積回路の製造方法
US6998148B1 (en) 2001-03-28 2006-02-14 Shipley Company, L.L.C. Porous materials
JP3886779B2 (ja) 2001-11-02 2007-02-28 富士通株式会社 絶縁膜形成用材料及び絶縁膜の形成方法
US6650010B2 (en) * 2002-02-15 2003-11-18 International Business Machines Corporation Unique feature design enabling structural integrity for advanced low K semiconductor chips
US6541397B1 (en) * 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
JP4092220B2 (ja) * 2003-01-31 2008-05-28 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
JP2004235548A (ja) * 2003-01-31 2004-08-19 Nec Electronics Corp 半導体装置およびその製造方法
US7022864B2 (en) * 2003-07-15 2006-04-04 Advanced Technology Materials, Inc. Ethyleneoxide-silane and bridged silane precursors for forming low k films
US7407893B2 (en) * 2004-03-05 2008-08-05 Applied Materials, Inc. Liquid precursors for the CVD deposition of amorphous carbon films
US7638440B2 (en) * 2004-03-12 2009-12-29 Applied Materials, Inc. Method of depositing an amorphous carbon film for etch hardmask application
US20060074522A1 (en) * 2004-09-30 2006-04-06 Liang Po H Method and system of automatic dispatch
JP4762630B2 (ja) * 2005-08-03 2011-08-31 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
FR2889850B1 (fr) * 2005-08-19 2007-11-02 Rhodia Chimie Sa Revetement silicone de faible constante dielectrique, procede de preparation et application aux circuits integres
US20070286954A1 (en) * 2006-06-13 2007-12-13 Applied Materials, Inc. Methods for low temperature deposition of an amorphous carbon layer
WO2007147020A2 (fr) * 2006-06-15 2007-12-21 Advanced Technology Materials, Inc. Précurseurs au cobalt utiles pour former des films contenant du cobalt sur des substrats
US20090093128A1 (en) * 2007-10-08 2009-04-09 Martin Jay Seamons Methods for high temperature deposition of an amorphous carbon layer
JP4666028B2 (ja) * 2008-03-31 2011-04-06 カシオ計算機株式会社 半導体装置
US20090269923A1 (en) * 2008-04-25 2009-10-29 Lee Sang M Adhesion and electromigration improvement between dielectric and conductive layers
KR101182441B1 (ko) * 2010-01-13 2012-09-12 삼성디스플레이 주식회사 유기 박막 패턴 형성 방법 및 유기 발광 디스플레이 장치의 제조 방법
TWI545652B (zh) 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9012904B2 (en) * 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9219159B2 (en) 2011-03-25 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US9653327B2 (en) 2011-05-12 2017-05-16 Applied Materials, Inc. Methods of removing a material layer from a substrate using water vapor treatment
US8999623B2 (en) 2013-03-14 2015-04-07 Wiscousin Alumni Research Foundation Degradable neutral layers for block copolymer lithography applications

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756977A (en) 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US5059448A (en) * 1990-06-18 1991-10-22 Dow Corning Corporation Rapid thermal process for obtaining silica coatings
US5238787A (en) 1991-04-22 1993-08-24 Dow Corning Corporation Photodelineable coatings from hydrogen silsesquioxane resin
JP3214186B2 (ja) * 1993-10-07 2001-10-02 三菱電機株式会社 半導体装置の製造方法
US5494859A (en) * 1994-02-04 1996-02-27 Lsi Logic Corporation Low dielectric constant insulation layer for integrated circuit structure and method of making same
US5527737A (en) * 1994-05-27 1996-06-18 Texas Instruments Incorporated Selective formation of low-density, low-dielectric-constant insulators in narrow gaps for line-to-line capacitance reduction
US5548159A (en) * 1994-05-27 1996-08-20 Texas Instruments Incorporated Porous insulator for line-to-line capacitance reduction
US5494858A (en) * 1994-06-07 1996-02-27 Texas Instruments Incorporated Method for forming porous composites as a low dielectric constant layer with varying porosity distribution electronics applications
US5609925A (en) 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
EP0881668A3 (fr) * 1997-05-28 2000-11-15 Dow Corning Toray Silicone Company, Ltd. Dépôt d'une couche mince électriquement isolante avec une constante diélectrique faible

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EP0881668A2 (fr) 1998-12-02
US20010002323A1 (en) 2001-05-31
TW426915B (en) 2001-03-21
EP0881668A3 (fr) 2000-11-15
US6214748B1 (en) 2001-04-10
US6358804B2 (en) 2002-03-19

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