SG71131A1 - Improvement to the anisotropic chemical etching process of silicon oxide in the manufacture of mos transistor flash eprom devices - Google Patents

Improvement to the anisotropic chemical etching process of silicon oxide in the manufacture of mos transistor flash eprom devices

Info

Publication number
SG71131A1
SG71131A1 SG1998001761A SG1998001761A SG71131A1 SG 71131 A1 SG71131 A1 SG 71131A1 SG 1998001761 A SG1998001761 A SG 1998001761A SG 1998001761 A SG1998001761 A SG 1998001761A SG 71131 A1 SG71131 A1 SG 71131A1
Authority
SG
Singapore
Prior art keywords
improvement
manufacture
silicon oxide
mos transistor
etching process
Prior art date
Application number
SG1998001761A
Other languages
English (en)
Inventor
Felice Russo
Koteswara Rao Chintapalli
Giuseppe Miccoli
Alessandro Torsi
Giuseppe Cautiero
Original Assignee
Texas Instruments Inc
Consorzio Eagle
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc, Consorzio Eagle filed Critical Texas Instruments Inc
Publication of SG71131A1 publication Critical patent/SG71131A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
SG1998001761A 1997-07-14 1998-07-13 Improvement to the anisotropic chemical etching process of silicon oxide in the manufacture of mos transistor flash eprom devices SG71131A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT97RM000430A IT1293535B1 (it) 1997-07-14 1997-07-14 Perfezionamento nel procedimento di attacco chimico anisotropo dell'ossido di silicio, in particolare nella fabbricazione di

Publications (1)

Publication Number Publication Date
SG71131A1 true SG71131A1 (en) 2000-03-21

Family

ID=11405175

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998001761A SG71131A1 (en) 1997-07-14 1998-07-13 Improvement to the anisotropic chemical etching process of silicon oxide in the manufacture of mos transistor flash eprom devices

Country Status (6)

Country Link
US (1) US6110781A (enExample)
EP (1) EP0893820A3 (enExample)
KR (1) KR19990013849A (enExample)
IT (1) IT1293535B1 (enExample)
SG (1) SG71131A1 (enExample)
TW (1) TW480620B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100607322B1 (ko) * 1999-06-30 2006-07-28 주식회사 하이닉스반도체 플래쉬 이이피롬 셀의 제조 방법
JP4149644B2 (ja) * 2000-08-11 2008-09-10 株式会社東芝 不揮発性半導体記憶装置
KR101024252B1 (ko) * 2003-10-30 2011-03-29 주식회사 하이닉스반도체 반도체소자 제조 방법
US7276755B2 (en) * 2005-05-02 2007-10-02 Advanced Micro Devices, Inc. Integrated circuit and method of manufacture
CN105070718B (zh) * 2015-08-18 2019-01-04 上海华虹宏力半导体制造有限公司 一种降低sonos存储器串联电阻的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275972A (en) * 1990-02-19 1994-01-04 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductor integrated circuit device including the self-aligned formation of a contact window
US5019879A (en) * 1990-03-15 1991-05-28 Chiu Te Long Electrically-flash-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area
TW203148B (enExample) * 1991-03-27 1993-04-01 American Telephone & Telegraph
JP3259349B2 (ja) * 1992-06-09 2002-02-25 ソニー株式会社 不揮発性半導体装置及びその製造方法
US5270234A (en) * 1992-10-30 1993-12-14 International Business Machines Corporation Deep submicron transistor fabrication method
JP2982580B2 (ja) * 1993-10-07 1999-11-22 日本電気株式会社 不揮発性半導体装置の製造方法
US5467308A (en) * 1994-04-05 1995-11-14 Motorola Inc. Cross-point eeprom memory array
JP2891205B2 (ja) * 1996-10-21 1999-05-17 日本電気株式会社 半導体集積回路の製造方法
US5766992A (en) * 1997-04-11 1998-06-16 Taiwan Semiconductor Manufacturing Company Ltd. Process for integrating a MOSFET device, using silicon nitride spacers and a self-aligned contact structure, with a capacitor structure

Also Published As

Publication number Publication date
TW480620B (en) 2002-03-21
IT1293535B1 (it) 1999-03-01
US6110781A (en) 2000-08-29
EP0893820A3 (en) 2003-10-29
ITRM970430A0 (enExample) 1997-07-14
ITRM970430A1 (it) 1999-01-14
EP0893820A2 (en) 1999-01-27
KR19990013849A (ko) 1999-02-25

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