SG67351A1 - Gold wire for bonding - Google Patents

Gold wire for bonding

Info

Publication number
SG67351A1
SG67351A1 SG1996009298A SG1996009298A SG67351A1 SG 67351 A1 SG67351 A1 SG 67351A1 SG 1996009298 A SG1996009298 A SG 1996009298A SG 1996009298 A SG1996009298 A SG 1996009298A SG 67351 A1 SG67351 A1 SG 67351A1
Authority
SG
Singapore
Prior art keywords
bonding
gold wire
gold
wire
Prior art date
Application number
SG1996009298A
Other languages
English (en)
Inventor
Shinichi Hanada
Koichiro Mukoyama
Original Assignee
Tanaka Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Electronics Ind filed Critical Tanaka Electronics Ind
Publication of SG67351A1 publication Critical patent/SG67351A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/01068—Erbium [Er]
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    • H01L2924/01074—Tungsten [W]
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    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01205—5N purity grades, i.e. 99.999%
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12431—Foil or filament smaller than 6 mils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
SG1996009298A 1995-05-17 1996-04-18 Gold wire for bonding SG67351A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11852195 1995-05-17
JP31905995A JP3337049B2 (ja) 1995-05-17 1995-12-07 ボンディング用金線

Publications (1)

Publication Number Publication Date
SG67351A1 true SG67351A1 (en) 1999-09-21

Family

ID=26456443

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996009298A SG67351A1 (en) 1995-05-17 1996-04-18 Gold wire for bonding

Country Status (6)

Country Link
US (1) US5702814A (de)
EP (1) EP0743679B1 (de)
JP (1) JP3337049B2 (de)
DE (1) DE69615746T2 (de)
MY (1) MY113663A (de)
SG (1) SG67351A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE224961T1 (de) * 1996-06-12 2002-10-15 Kazuo Ogasa Verfahren zur herstellung von einer hochreinen hartgoldlegierung
EP0890987B1 (de) * 1997-07-07 2003-03-05 W.C. Heraeus GmbH & Co. KG Feinstdraht aus einer Goldlegierung, Verfahren zu seiner Herstellung und seine Verwendung
DE19821395C2 (de) 1998-05-13 2000-06-29 Heraeus Gmbh W C Verwendung eines Feinstdrahtes aus einer nickelhaltigen Gold-Legierung
US6610930B1 (en) * 1998-09-16 2003-08-26 Kulicke & Soffa Investments, Inc. Composite noble metal wire
JP3323185B2 (ja) * 2000-06-19 2002-09-09 田中電子工業株式会社 半導体素子接続用金線
KR100427749B1 (ko) * 2002-05-07 2004-04-28 엠케이전자 주식회사 반도체 소자 본딩용 금-은 합금 와이어
EP1811555A4 (de) * 2004-09-30 2012-06-20 Tanaka Electronics Ind Au-legierungs-bonddraht
US8440137B2 (en) * 2004-11-26 2013-05-14 Tanaka Denshi Kogyo K.K. Au bonding wire for semiconductor device
JP5311715B2 (ja) 2005-01-24 2013-10-09 新日鉄住金マテリアルズ株式会社 半導体素子接続用金線
JP5166738B2 (ja) * 2006-03-24 2013-03-21 新日鉄住金マテリアルズ株式会社 半導体素子接続用金線
JP4134261B1 (ja) * 2007-10-24 2008-08-20 田中電子工業株式会社 ボールボンディング用金合金線
JP4195495B1 (ja) * 2007-11-06 2008-12-10 田中電子工業株式会社 ボールボンディング用金合金線

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330329A (en) * 1979-11-28 1982-05-18 Tanaka Denshi Kogyo Kabushiki Kaisha Gold bonding wire for semiconductor elements and the semiconductor element
GB2116208B (en) * 1981-12-04 1985-12-04 Mitsubishi Metal Corp Fine gold alloy wire for bonding of a semiconductor device
US4775512A (en) * 1985-10-01 1988-10-04 Tanaka Denshi Kogyo Kabushiki Kaisha Gold line for bonding semiconductor element
GB2201545B (en) * 1987-01-30 1991-09-11 Tanaka Electronics Ind Method for connecting semiconductor material
GB2262746B (en) * 1989-04-28 1993-09-22 Tanaka Electronics Ind Gold wire for the bonding of a semiconductor device
KR920010119B1 (ko) * 1989-04-28 1992-11-16 다나카 덴시 고오교오 가부시기가이샤 반도체 소자의 본딩(bonding)용 금선
JP2891432B2 (ja) * 1989-12-27 1999-05-17 田中電子工業株式会社 半導体材料の接続方法，それに用いる接続材料及び半導体装置
JP2689773B2 (ja) * 1991-07-02 1997-12-10 住友金属鉱山株式会社 ボンデイングワイヤー

Also Published As

Publication number Publication date
JP3337049B2 (ja) 2002-10-21
JPH0936162A (ja) 1997-02-07
DE69615746T2 (de) 2002-06-20
EP0743679A3 (de) 1997-02-26
MY113663A (en) 2002-04-30
EP0743679A2 (de) 1996-11-20
US5702814A (en) 1997-12-30
DE69615746D1 (de) 2001-11-15
EP0743679B1 (de) 2001-10-10

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