SG65694A1 - Method of reducing generation of particulate matter in a sputtering chamber - Google Patents

Method of reducing generation of particulate matter in a sputtering chamber

Info

Publication number
SG65694A1
SG65694A1 SG1997003872A SG1997003872A SG65694A1 SG 65694 A1 SG65694 A1 SG 65694A1 SG 1997003872 A SG1997003872 A SG 1997003872A SG 1997003872 A SG1997003872 A SG 1997003872A SG 65694 A1 SG65694 A1 SG 65694A1
Authority
SG
Singapore
Prior art keywords
particulate matter
sputtering chamber
reducing generation
generation
reducing
Prior art date
Application number
SG1997003872A
Other languages
English (en)
Inventor
Kenny K Ngan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG65694A1 publication Critical patent/SG65694A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/022Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
SG1997003872A 1996-10-31 1997-10-27 Method of reducing generation of particulate matter in a sputtering chamber SG65694A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/741,708 US5961793A (en) 1996-10-31 1996-10-31 Method of reducing generation of particulate matter in a sputtering chamber

Publications (1)

Publication Number Publication Date
SG65694A1 true SG65694A1 (en) 1999-06-22

Family

ID=24981835

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003872A SG65694A1 (en) 1996-10-31 1997-10-27 Method of reducing generation of particulate matter in a sputtering chamber

Country Status (5)

Country Link
US (1) US5961793A (fr)
EP (1) EP0840351A3 (fr)
JP (1) JPH10212576A (fr)
SG (1) SG65694A1 (fr)
TW (1) TW409280B (fr)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368469B1 (en) * 1996-05-09 2002-04-09 Applied Materials, Inc. Coils for generating a plasma and for sputtering
KR100489918B1 (ko) * 1996-05-09 2005-08-04 어플라이드 머티어리얼스, 인코포레이티드 플라즈마발생및스퍼터링용코일
JP4562818B2 (ja) * 1997-02-14 2010-10-13 パナソニック株式会社 人工格子多層膜の着膜装置
US6652717B1 (en) * 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6361661B2 (en) * 1997-05-16 2002-03-26 Applies Materials, Inc. Hybrid coil design for ionized deposition
US6579426B1 (en) * 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US6315872B1 (en) * 1997-11-26 2001-11-13 Applied Materials, Inc. Coil for sputter deposition
US6506287B1 (en) 1998-03-16 2003-01-14 Applied Materials, Inc. Overlap design of one-turn coil
US6660134B1 (en) * 1998-07-10 2003-12-09 Applied Materials, Inc. Feedthrough overlap coil
WO2000022646A1 (fr) * 1998-10-15 2000-04-20 Applied Materials, Inc. Bobine refroidie par eau pour chambre a plasma
US6235163B1 (en) * 1999-07-09 2001-05-22 Applied Materials, Inc. Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance
US6168696B1 (en) * 1999-09-01 2001-01-02 Micron Technology, Inc. Non-knurled induction coil for ionized metal deposition, sputtering apparatus including same, and method of constructing the apparatus
US6099705A (en) * 1999-09-08 2000-08-08 United Microelectronics Corp. Physical vapor deposition device for forming a uniform metal layer on a semiconductor wafer
US6387800B1 (en) * 1999-12-20 2002-05-14 Taiwan Semiconductor Manufacturing Company Method of forming barrier and seed layers for electrochemical deposition of copper
US6627056B2 (en) * 2000-02-16 2003-09-30 Applied Materials, Inc. Method and apparatus for ionized plasma deposition
US6461483B1 (en) * 2000-03-10 2002-10-08 Applied Materials, Inc. Method and apparatus for performing high pressure physical vapor deposition
US6699375B1 (en) 2000-06-29 2004-03-02 Applied Materials, Inc. Method of extending process kit consumable recycling life
US6627050B2 (en) * 2000-07-28 2003-09-30 Applied Materials, Inc. Method and apparatus for depositing a tantalum-containing layer on a substrate
US6534394B1 (en) 2000-09-13 2003-03-18 International Business Machines Corporation Process to create robust contacts and interconnects
US6356025B1 (en) * 2000-10-03 2002-03-12 Archimedes Technology Group, Inc. Shielded rf antenna
US6537622B2 (en) * 2001-05-04 2003-03-25 Silicon Integrated Systems Corp. Method of prevention of particle pollution in a pre-clean chamber
US6756318B2 (en) * 2001-09-10 2004-06-29 Tegal Corporation Nanolayer thick film processing system and method
US9708707B2 (en) * 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US9121098B2 (en) 2003-02-04 2015-09-01 Asm International N.V. NanoLayer Deposition process for composite films
KR101001743B1 (ko) * 2003-11-17 2010-12-15 삼성전자주식회사 헬리컬 자기-공진 코일을 이용한 이온화 물리적 기상 증착장치
US20060109195A1 (en) * 2004-11-22 2006-05-25 Tihiro Ohkawa Shielded antenna
US8721846B2 (en) * 2004-11-30 2014-05-13 Tokyo Electron Limited Method of forming film, film forming apparatus and storage medium
US9659758B2 (en) 2005-03-22 2017-05-23 Honeywell International Inc. Coils utilized in vapor deposition applications and methods of production
JP2008013829A (ja) * 2006-07-07 2008-01-24 Fujitsu Ltd 金属酸化膜の成膜方法
US20100304027A1 (en) * 2009-05-27 2010-12-02 Applied Materials, Inc. Substrate processing system and methods thereof
GB201420935D0 (en) 2014-11-25 2015-01-07 Spts Technologies Ltd Plasma etching apparatus
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
EP3539754B1 (fr) * 2018-03-14 2023-04-26 Concept Laser GmbH Procédé de fabrication additive d'au moins un objet tridimensionnel

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594295A (en) * 1966-09-19 1971-07-20 Physics Technology Lab Inc Rf sputtering of insulator materials
US4362632A (en) * 1974-08-02 1982-12-07 Lfe Corporation Gas discharge apparatus
US4756815A (en) * 1979-12-21 1988-07-12 Varian Associates, Inc. Wafer coating system
US4336118A (en) * 1980-03-21 1982-06-22 Battelle Memorial Institute Methods for making deposited films with improved microstructures
JPS5819363A (ja) * 1981-07-27 1983-02-04 Mitsubishi Chem Ind Ltd アントラキノン化合物、その製造法及びセルロース含有繊維類用アントラキノン染料
JPS5863139A (ja) * 1981-10-12 1983-04-14 Nippon Telegr & Teleph Corp <Ntt> 半導体結晶上への絶縁膜の形成法
US4495221A (en) * 1982-10-26 1985-01-22 Signetics Corporation Variable rate semiconductor deposition process
JPS59190363A (ja) * 1983-04-11 1984-10-29 Orient Watch Co Ltd 金属薄膜の形成方法
US4865712A (en) * 1984-05-17 1989-09-12 Varian Associates, Inc. Apparatus for manufacturing planarized aluminum films
US4661228A (en) * 1984-05-17 1987-04-28 Varian Associates, Inc. Apparatus and method for manufacturing planarized aluminum films
EP0169744A3 (fr) * 1984-07-26 1987-06-10 United Kingdom Atomic Energy Authority Source d'ions
JPH0740468B2 (ja) * 1984-12-11 1995-05-01 株式会社日立製作所 高周波プラズマ発生装置
JPS61190070A (ja) * 1985-02-20 1986-08-23 Hitachi Ltd スパツタ装置
WO1986006923A1 (fr) * 1985-05-03 1986-11-20 The Australian National University Procede et appareil de production de plasmas magnetiques de grand volume
EP0202572B1 (fr) * 1985-05-13 1993-12-15 Nippon Telegraph And Telephone Corporation Procédé pour la formation d'une couche mince aplanie d'aluminium
US4626312A (en) * 1985-06-24 1986-12-02 The Perkin-Elmer Corporation Plasma etching system for minimizing stray electrical discharges
JP2515731B2 (ja) * 1985-10-25 1996-07-10 株式会社日立製作所 薄膜形成装置および薄膜形成方法
US4818723A (en) * 1985-11-27 1989-04-04 Advanced Micro Devices, Inc. Silicide contact plug formation technique
GB8629634D0 (en) * 1986-12-11 1987-01-21 Dobson C D Reactive ion & sputter etching
US5292393A (en) * 1986-12-19 1994-03-08 Applied Materials, Inc. Multichamber integrated process system
US4792732A (en) * 1987-06-12 1988-12-20 United States Of America As Represented By The Secretary Of The Air Force Radio frequency plasma generator
JP2602276B2 (ja) * 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
US5175608A (en) * 1987-06-30 1992-12-29 Hitachi, Ltd. Method of and apparatus for sputtering, and integrated circuit device
JPS6411966A (en) * 1987-07-02 1989-01-17 Fujitsu Ltd High-temperature sputtering method
US4824544A (en) * 1987-10-29 1989-04-25 International Business Machines Corporation Large area cathode lift-off sputter deposition device
KR920003789B1 (ko) * 1988-02-08 1992-05-14 니뽄 덴신 덴와 가부시끼가이샤 플라즈마 스퍼터링을 이용한 박막 형성 장치 및 이온원
US4842703A (en) * 1988-02-23 1989-06-27 Eaton Corporation Magnetron cathode and method for sputter coating
JP2859632B2 (ja) * 1988-04-14 1999-02-17 キヤノン株式会社 成膜装置及び成膜方法
JP2776826B2 (ja) * 1988-04-15 1998-07-16 株式会社日立製作所 半導体装置およびその製造方法
US4944961A (en) * 1988-08-05 1990-07-31 Rensselaer Polytechnic Institute Deposition of metals on stepped surfaces
US4871421A (en) * 1988-09-15 1989-10-03 Lam Research Corporation Split-phase driver for plasma etch system
US4925542A (en) * 1988-12-08 1990-05-15 Trw Inc. Plasma plating apparatus and method
US4918031A (en) * 1988-12-28 1990-04-17 American Telephone And Telegraph Company,At&T Bell Laboratories Processes depending on plasma generation using a helical resonator
GB8905075D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Electrode assembly and apparatus
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US5135629A (en) * 1989-06-12 1992-08-04 Nippon Mining Co., Ltd. Thin film deposition system
US5429070A (en) * 1989-06-13 1995-07-04 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5122251A (en) * 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5421891A (en) * 1989-06-13 1995-06-06 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5091049A (en) * 1989-06-13 1992-02-25 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5234560A (en) * 1989-08-14 1993-08-10 Hauzer Holdings Bv Method and device for sputtering of films
US4970176A (en) * 1989-09-29 1990-11-13 Motorola, Inc. Multiple step metallization process
JP2834797B2 (ja) * 1989-10-25 1998-12-14 株式会社リコー 薄膜形成装置
DE3942964A1 (de) * 1989-12-23 1991-06-27 Leybold Ag Einrichtung fuer die erzeugung eines plasmas
DE69129081T2 (de) * 1990-01-29 1998-07-02 Varian Associates Gerät und Verfahren zur Niederschlagung durch einen Kollimator
US5304279A (en) * 1990-08-10 1994-04-19 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
US5206516A (en) * 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
KR100255703B1 (ko) * 1991-06-27 2000-05-01 조셉 제이. 스위니 전자기 rf연결부를 사용하는 플라즈마 처리기 및 방법
US5171412A (en) * 1991-08-23 1992-12-15 Applied Materials, Inc. Material deposition method for integrated circuit manufacturing
JPH05152248A (ja) * 1991-11-26 1993-06-18 Sony Corp アルミニウム系配線材料の埋込み方法
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5342571A (en) * 1992-02-19 1994-08-30 Tosoh Smd, Inc. Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets
US5368685A (en) * 1992-03-24 1994-11-29 Hitachi, Ltd. Dry etching apparatus and method
US5225740A (en) * 1992-03-26 1993-07-06 General Atomics Method and apparatus for producing high density plasma using whistler mode excitation
US5361016A (en) * 1992-03-26 1994-11-01 General Atomics High density plasma formation using whistler mode excitation in a reduced cross-sectional area formation tube
US5231334A (en) * 1992-04-15 1993-07-27 Texas Instruments Incorporated Plasma source and method of manufacturing
US5241245A (en) * 1992-05-06 1993-08-31 International Business Machines Corporation Optimized helical resonator for plasma processing
US5397962A (en) * 1992-06-29 1995-03-14 Texas Instruments Incorporated Source and method for generating high-density plasma with inductive power coupling
JP3688726B2 (ja) * 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
US5404079A (en) * 1992-08-13 1995-04-04 Matsushita Electric Industrial Co., Ltd. Plasma generating apparatus
US5312717A (en) * 1992-09-24 1994-05-17 International Business Machines Corporation Residue free vertical pattern transfer with top surface imaging resists
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
JP3224443B2 (ja) * 1993-02-08 2001-10-29 靖浩 堀池 ヘリコン波プラズマ処理装置
JP3271359B2 (ja) * 1993-02-25 2002-04-02 ソニー株式会社 ドライエッチング方法
JP3252518B2 (ja) * 1993-03-19 2002-02-04 ソニー株式会社 ドライエッチング方法
JP3174981B2 (ja) * 1993-03-26 2001-06-11 東京エレクトロン株式会社 ヘリコン波プラズマ処理装置
US5430355A (en) * 1993-07-30 1995-07-04 Texas Instruments Incorporated RF induction plasma source for plasma processing
US5418431A (en) * 1993-08-27 1995-05-23 Hughes Aircraft Company RF plasma source and antenna therefor
US5443995A (en) * 1993-09-17 1995-08-22 Applied Materials, Inc. Method for metallizing a semiconductor wafer
US5431799A (en) * 1993-10-29 1995-07-11 Applied Materials, Inc. Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency
DE69531880T2 (de) * 1994-04-28 2004-09-09 Applied Materials, Inc., Santa Clara Verfahren zum Betreiben eines CVD-Reaktors hoher Plasma-Dichte mit kombinierter induktiver und kapazitiver Einkopplung
US5639357A (en) * 1994-05-12 1997-06-17 Applied Materials Synchronous modulation bias sputter method and apparatus for complete planarization of metal films
US5503676A (en) * 1994-09-19 1996-04-02 Lam Research Corporation Apparatus and method for magnetron in-situ cleaning of plasma reaction chamber
JP2657170B2 (ja) * 1994-10-24 1997-09-24 東京エレクトロン株式会社 プラズマ処理装置
JPH07176399A (ja) * 1994-10-24 1995-07-14 Tokyo Electron Ltd プラズマ処理装置
US5573595A (en) * 1995-09-29 1996-11-12 Lam Research Corporation Methods and apparatus for generating plasma

Also Published As

Publication number Publication date
EP0840351A3 (fr) 1998-09-16
TW409280B (en) 2000-10-21
US5961793A (en) 1999-10-05
EP0840351A2 (fr) 1998-05-06
JPH10212576A (ja) 1998-08-11

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